Photoneece PW-1200 series
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1 Positive Tone Photosensitive Polyimide Photoneece PW-1200 series TORAY Industries, Inc.
2 Introduction of PW series PW1200 series is the improved grade for multi-layer and bump process use. PW-1200 series For buffer coat use +High Tg +Chemical Resistance PW-00 series +Photosensitivity +Photolithography +Alkaline Developability Non-photosensitive Polyimide Positive Photosensitive Polyimide Coating PW series
3 Features of PW-1200 series PW-1200 series are positive tone photosensitive polyimide coatings with high glass transition temperature, high chemical resistance, and the following characteristics. (1)Good Film Performance (2) Wide Cure Process Window (3)Good Photolithographic Performance (4)Good Solution Stability (5) Thick Film Applicable
4 Comparison of Film Performance of PW-00 with PW-1200 PSPI name Curing Condition PW PW Mechanical Properties Tensile Strength Elongation Young s Modulus 140MPa 15% 3.7GPa 146MPa 20% 3.7GPa Impossible to measure 130MPa 30% 3.5GPa 5% Weight Loss 356 o C 435 o C 328 o C 458 o C Temperature Thermal Properties 1% Weight Loss Temperature 309 o C 390 o C 302 o C 395 o C Tg (TMA) 230 o C 305 o C Impossible 270 o C to measure
5 Film Performance of PW-1200 PSPI name PW-1200 Curing Condition 250 1h 320 1h 350 1h 380 1h h h Mechanical Properties Tensile Strength Elongation Young s Modulus 140MPa 15% 3.7GPa 146MPa 20% 3.7GPa 149MPa 20% 3.8GPa 140MPa 20% 3.7GPa 140MPa % 3.8GPa 140MPa % 3.7GPa 5% Weight Loss 356 o C 435 o C 455 o C 475 o C 485 o C 527 o C Temperature Thermal Properties 1% Weight Loss Temperature Tg (TMA) 309 o C 230 o C 390 o C 305 o C 400 o C 305 o C 418 o C 305 o C 426 o C 305 o C 465 o C 3 o C
6 Chemical Resistance of PW-1200(1) Solvent resistance cure condition solvent min(N2) PW-00 PW-1200 ethyl lactate 30s butyl acetate 30s PGMEA 120s 25%NaOH H2SO4/H2O2/H20=1/2/24 Resist stripper cure condition treatment condition min(N2) 96 40min PI thickness(μm) initial KOH base NMP-MMEA PW (Swelling) 0(Dissolved) PW
7 Chemical Resistance of PW-1200(2) Chemicals Condition Resullt N-methylpyrrolidone RT 15min No change Solvent gamma-butylolactone RT 15min No change Ethyl lactate RT 15min No change Acetone RT 15min No change PGMEA RT 15min No change Resist stripper DMSO/monomethanolamine 80C 30min % thickness decresase Alkali 25%NaOH 40C min No change % KOH 40C min No change Etchant H2SO4/H2O2 40C min No change 1% HF RT 5min No change Flux Senjyu Deltalux C 20sec No change Cleaner Arakawa Pine-arfa 40C 30min No change Polyimide cure condition; min min
8 Patterning Process of PW-1200 for 5μm Thickness after 350 o C Cure Spincoat Prebaking Exposure Development 700rpm for sec and 2400rpm for 30sec 120 o C 3min (Hot plate) (Thickness:7.90 μm) 250 mj/cm 2 (g-line, i-line stepper) 120 sec. Paddle development (Thickness:6.67 μm) (2.38% TMAH solution) Curing 140 o C for 60min+350 o C for 60min (N 2 ) (Thickness:5.12 μm)
9 Patterning process of PW-1200 by Mark-7 (TEL) 1. PSPI coat (Mark 7) C/S Dehydro-Bake (DHP) 230 X 60 s COL 23 X 60 s Coater Recipe COAT STEP Time Rotation Accel Dispence (sec) (rpm) (rpm/sec) Pre-Bake (HP) 120 X180 s COL 23 X 60 s C/S Dispence PSPI at step 1 2.Exposure i-line Stepper (GCA 8000 DSW WAFER STEPPER) Exposure time 600 msec (300mJ/cm 2 ) focus 0 μm 3.Development(Mark 7) C/S Develop recipe STEP Time Roatation Accel Dispence DEV (sec) (rpm) (rpm/sec) C/S Developer:(TMAH 2.38%) Flow rate:0.6 L/min Rinse (water) Flow rate:1.2 L/min Exhaust:60 Pa Nozzle:Stream nozzle Thickness(μm) Rotation speed vs. Film thickness after PB 15 y = x Rotation(rpm) 4.Cure Appratus:Koyo-Lindberg INH-21CD Condition :r.t min min r.t. (slope 3.5 /min) Oxygen concentration:less than 0 ppm(nitrogen gas purge)
10 Patterning Process of PW-1270 for μm Thickness after 350 o C Cure Spincoat Prebaking Exposure Development 700rpm for sec and 2200rpm for 30sec 120 o C 3min (Hot plate) (Thickness:14.34μm) 50mJ/cm 2 (g-line, i-line stepper) 40 sec 3 Paddle development (Thickness:13.39μm) (2.38% TMAH solution) Curing 140 o C for 30min+350 o C for 60min (N 2 ) (Thickness:9.91 μm) PW-1270 is high viscosity version of PW-1200
11 Patterning process of PW-1270 by Mark-7 (TEL) 1. PSPI coat (Mark 7) C/S Dehydro-Bake (DHP) 230 X 60 s COL 23 X 60 s Coater Recipe COAT STEP Time Rotation Accel Dispence (sec) (rpm) (rpm/sec) Pre-Bake (HP) 120 X180 s COL 23 X 60 s C/S Dispence PSPI at step 1 2.Exposure i-line Stepper (GCA 8000 DSW WAFER STEPPER) Exposure time 20 msec (50mJ/cm 2 ) focus 0 μm 3.Development(Mark 7) C/S Develop recipe STEP Time Roatation Accel Dispence DEV (sec) (rpm) (rpm/sec) C/S Developer:(TMAH 2.38%) Flow rate:0.6 L/min Rinse (water) Flow rate:1.2 L/min Exhaust:60 Pa Nozzle:Stream nozzle Thickness(μm) Rotation speed vs. Film thickness after PB y = 16876x Rotation(rpm) 4.Cure Appratus:Koyo-Lindberg INH-21CD Condition :r.t min min r.t. (slope 3.5 /min) Oxygen concentration:less than 0 ppm(nitrogen gas purge)
12 Pattern Profile of PW-1200 after 350 o C Cure (5 μm Thickness after Curing) 5μm L&S μm L&S Exposure: i-line Stepper (GCA DSW-8000:NA=0.42) Dose: 300 mj/cm 2 Thickness:5.1μm after Curing on Si
13 Critical Dimension of PW-1200 after Development V4-2 Mask Size 5μm Top Bottom Process Condition Pre-baking 120 3min (proximity) (Thickness 7.90μm) Exposure tool i-line stepper Development 120sec. Paddle (2.38%TMAH solution) (Thickness 6.67μm) Mask Size μm Top Bottom Mask Size 20μm Top Bottom
14 Mask Linearity of PW-1200 after Development V4-2 Bottom Size V4-2 Top Size μm Mask μm Mask 5μm Mask μm Mask μm Mask 5μm Mask
15 Critical Dimension of PW-1200 after Curing V4-2 キュア Mask Size 5μm Top Bottom Curing Condition Apparatus INH-21CD (Koyo Thermosystem) Heating min min (slope: 3.4 /min) Oxygen under 300ppm (Nitrogen gas purge) (Thickness 5.12μm) V4-2 Mask Size μm V4-2 Mask Size 20μm Top Bottom Top Bottom
16 Mask Linearity of PW-1200 after Curing Bottom Size μm Mask μm Mask 5μm Mask Top Size μm Mask μm Mask 5μm Mask
17 Adhesion of PW-1200 to Substrate (Si and SiN) Final Curing Temperature Oxygen (ppm) PCT treatment time(hr.) OK OK OK OK OK OK OK OK OK OK OK OK 0 OK OK OK OK OK OK OK OK OK OK OK OK 250 OK OK OK OK OK OK OK OK OK OK OK OK 000 OK OK OK OK OK OK OK OK OK ーーー Cure :Koyo-Thermo Systems CLH- PCT :121 C, 2 atm
18 Solder Flux Resistance of PW-1200 (1) Positive-PSPI Row # Thickness Polyimide Curing Condition PW-1200 Flux Resistance Flux Name Curing Temp. O2 Concentration Treatment Condition Deltalux 533 Deltalux 529D-1 um Time ppm Surfce Change Surfce Change 1 5 Crack Crack min 4 5 Crack Crack Crack Crack 6 00 Crack Crack min sec min Solder Flux: Senju Metal Industry Co., Ltd.
19 Solder Flux Resistance of PW-1200 (2) Polyimide Curing Condition Flux Resistance Row # Positive-PSPI PW-1200 Flux Name Thickness Curing Temp. O2 Concentration Treatment Condition Deltalux 533 Deltalux 529D-1 um Time ppm surfce change surfce change 19 5 Crack Crack Crack Crack Crack Crack min 22 5 Crack Crack Crack Crack Crack Crack min sec 28 5 Crack Crack min Solder Flux: Senju Metal Industry Co., Ltd.
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