CLAD MATERIAL ~ FINE CLAD is a solution for high density, low cost PWB.

Transcription

1 ~ CLAD MATERIAL ~ FINE CLAD is a solution for high density, low cost PWB.

2 Principle of bonding technique

3 Principle of bonding technique Step 1 Material A, B In vacuum Step 2 Surface activated treatment Step 3 Roll bonding A Oxide and absorbate Ar + Ar + Activated surface B

4 Manufacturing process

5 Manufacturing process Vacuum chamber Material A Uncoiling device Rolling mill Ion etching device Material B Uncoiling device Coiling device

6 Features of FINE CLAD

7 Feature 1 Flat and clean bonding interface Feature2 Feature 3 A variety of possible metal combinations Pattern roll bonding

8 Feature 1 Bonding interface

9 Cross section of FINE CLAD Cu/Ni FINE CLAD Conventional Cu/Ni clad Interface = Flat 30μm Interface=Rough 30μm Is there alloy layer in the interface? No! Suitable for selective etching

10 Outline of selective etching (Selective etching:etching only one side metal of clad material) Example: Cu/Al FINE CLAD Patterning photoresist photoresist Cu (metal to be etched) Al (metal for etching stopper) Selective etching Cu Cu Al Cross section of Cu/Al after Cu selective etching

11 Metal combinations for selective etching Etching metals Cu Al Cu Ni Cu, SUS Ag, Cu Metals for etching stopper Al Cu Ni Cu Pd, Ag SUS Etchant for selective etching Acid etchant (sulfuric acid etc.) Sodium hydroxide etchant etc. Sulfuric acid + hydrogen peroxide etchant Ammonium persulfate etchant Commercial Alkaline etchant Commercial Ni etchant Ferric chloride etchant Ferric nitrate etchant What is the best use of FINE CLAD by using these merit?

12 FINE CLAD for Printed Wiring Board Etching bump provides high density, low cost PWB

13 Structure and etching process Cu/Ni/Cu FINE CLAD Circuit Cu foil Ni layer Cu sheet Bump Cu selective etching and bump forming Cu for circuit : 10 ~ 35μm thickness Ni layer : 0.5~3 μm (electrolytic plating) Cu for bump : 50 ~ 150 μm

14 Role of etched Cu bump IC chip Package substrate ML-PWB

15 Features of etched Cu bump Simultaneous bump formation enables to reduce cost of PWB. Small diameter bumps enable high density. Cu bumps are suitable for conductive via. Direct interconnection of bump with circuit enables to simplify the manufacturing process. 20μm

16 Process of multi layer PWB Cu/Ni/Cu clad Bump forming and Ni removing Laminating resin Hot press Patter forming Repeat

17 ML-PWB (for mobile phone) Produced by NORTH corp., Japan (layer : 1+2+1)

18 Flexibility of products design Stacked via Landless design Pad on via All IVH

19 Application to the package substrate

20 Etched Cu bump Ni Cu bump Cu Cu 10μm 10μ m Etched Cu bump Cross section 10μm 10μ m

21 Package substrate Cu/Ni/Cu/Ni/Cu clad Bump forming IC chip Laminating Insulating resin Bump forming Solder ball Packaging バンプ Circuit forming

22 Package substrate IC chip Solder ball Bump Circuit 1mm Substrate sample (resin : polyimide) Bump Cross section 100μm

23 Material for power module substrate Structure : Cu/Al Merit : Possible to form Al pad for Al wiring and Cu circuit. Base material Al Cu Insulating resin Al (for Al wire bonding pad ) Cu (circuit) Al pad Al wire IC Cu circuit Al substrate Selective etching Al substrate

24 Bump formation for QFN Structure : Cu alloy / Cu alloy Merit : Possible to improve the reliability of QFN mounting. IC chip setting and molding resin IC wire Clad material Cu alloy A Cu alloy B Removing clad material Au plating Half etching IC Mounting Selective etching Cu alloy B IC PWB

25 Bump formation for QFN IC PWB 50μm Cross section after etch Reverse mushroom shape bumps improve the mounting reliability.

26 Copper Laminated Resin sheet FINE CLAD changes the RF PWB design.

27 Structure Rolled Cu foil (10 ~ 35μm thickness) Flat interface Low dielectric constant resin sheet (25 ~ 100μm thickness ) (Liquid crystal polymer : LCP)

28 Advantages Rolled Cu foil Electrodeposited Cu foil LCP film Developed material 35μm LCP film 35μm Conventional hot press type Cross section of Cu laminated resin sheet Advantages of developed material Interface Skin resistance Accuracy of pattern Developed material Flat Low Excellent Conventional Rough High good

29 High frequency characteristics Attenuation / db/m Rolled Cu foil 35μm -15 Conventional electrodeposited Cu foil 35μm Frequency / GHz Cu foil : 7μm thickness LCP film: 50μm thickness L/S : 50μm / 50μm

30 Peeled face after peeling test Peeling strength : over 600g/cm at 180 peeling test Cu side (LCP is remained on Cu ) LCP side (LCP is fractured at inside )

31 Application to multi-layer PWB Manufacturing process of all LCP PWB Pattern formation Ⅰtype LCP Core board Laminating and drilling Rolled Cu foil Ⅱtype LCP Via filling and pattern forming

32 Features 1 Flat interface reduces skin resistance. 2 Flat interface enables to form fine pitch pattern. 3 Combination with low dielectric constant resin sheet enables the application to RF PWB. 4 A variety of resin sheets are available.

33 Multi-layer layer sheet for embedded resistor FINE CLAD provides the embedded passive devices.

34 Structure Rolled Cu foil (flat interface) (10 ~ 35μm thickness) Resistant layer ( Ni-Cr etc. ) Low dielectric constant resin sheet (25 ~ 100μm thickness ) (Liquid crystal polymer : LCP)

35 Process for resistor element Base material Cu selective etching Resistant layer etching Cross section Resistor element circuit Cu selective etching Upper side view

36 Specifications Resistor Circuit Resistive material Specifications Ni-Cr Thickness of layer Sheet resistance 10 ~ 200nm 25, 50, 100Ω/

37 Features Resistor Features Cu Pad 1 Low TCR material is used. 2 Resistor can be formed only by etching process. 3 Flat thin film enables to improve the accuracy of etching.

38 Feature 2 Materials combinations

39 Manufacturing range Material thickness Product thickness Product width 10μm~1mm 30μm~1mm 2.5~600mm Coil

40 Materials combinations Al Cu Ni Ag Au Pd Pb Sn Al ーーー Cu ーー Ni ーーーー Ag ー ーーー ーー Au ー ーーーーーー Pd ーーー ーーーー Pb ーーーーーーー Sn ーーーーー Steel ー Ti ー ー ー Mo ーーーーーー Al :Including 1000, 2000, 3000,4000,5000 alloy Cu :Including 1020, 1100, 1201, 5210 alloy Steel :Including SUS304, SUS316,SUS430, Invar, 42alloy etc. :Bonding has not been verified.

41 Mechanical properties of clad before and after cladding Before cladding After cladding Before cladding After cladding Conventional clad Material Thickness (mm) Hardness (Hv) Tensile strength(n/mm 2 ) SUS Al SUS Al * steel Al steel Al SUS Al * 744 * *Strength of clad material Mechanical properties of raw material have hardly changes before and after cladding.

42 Drawing and ironing of FINE CLAD Al clad steel Cu clad steel Ti/Al/SUS304 clad

43 Feature 3 Pattern roll bonding

44 Pattern roll bonding 1 ~ safety vent ~

45 Process of safety vent Punched metal (0.4~1mm thickness) + Cladding Metal foil (20~30μm thickness) Safety vent Electrode hole Chip type Cap type Manufacturing process of safety vent for Li ion secondary battery

46 Parts for Li ion secondary batteries

47 Pattern roll bonding 2 ~ Plate type tube ~

48 Trial sample of plate type tube 1 Pattern bonding by paint patterning (BN paint) 2 Pattern bonding by cladding sheet with stamped substrate 1.5mm

49 Example of pattern bonding after expansion treatment

50 FINE CLAD is a solution for high density, low cost PWB.