Progress in SuperPower s 2G HTS Wire Development and Manufacturing

Transcription

1 superior performance. powerful technology. Progress in SuperPower s 2G HTS Wire Development and Manufacturing V. Selvamanickam and J. Dackow SuperPower : Y. Chen, Y. Qiao, S. Sambandam, A. Rar, X. Xiong, D. Hazelton, R. Schmidt, and Y. Xie University of Houston : G.Majkic, I.Kesign, A.Guevara, S.Tuo, Y.Yao, Y.Zhang, N.Khatri, X.Tao, A.Sundaram, S.Lee, and E.Galstyan Supported by CRADAs with Oak Ridge, Los Alamos, Argonne, Brookhaven National Laboratories and NREL & collaboration with Florida State Univ DOE Advanced Cables & Conductors Peer Review, Alexandria, VA, June 29 July 1, 2010 SuperPower, Inc. is a subsidiary of Royal Philips Electronics N.V.

2 Success of the DOE 2G Wire Development program Successful integration of industry, national lab technologies with university support Industrial scale HTS production techniques developed Multiple world records for 2G wire performance in long lengths World s only demonstration of 1,000+ m long 2G wire World s first 2G HTS wire device inserted in the power grid U.S. is the only source of pre-commercial 2G wire Several hundred kilometers shipped Price reduced three-fold in last three years even before onset of a commercial market! From FY09 reviewers recommendations: SuperPower should be asked to be clear about wire costs, how to reduce them, and what costs might be expected in the future with improved or larger-scale processing. They were open about this previously, but were less clear on this topic this year. 2

3 Wire price-performance is the key factor for commercialization Today s 2G wire: 100 A performance at 77 K, zero applied magnetic field, Price $ 40/m = $ 400/kA-m At this price, cost of wire for typical device project (other than cable) > $ 1 M (more expensive than the typical cost of the device itself!) Cost of wire for a 500 km cable project = $ 20 M (~ cost of cable project itself!) Metric Today Customer requirement Price $ 400/kA-m < $ 100/kA-m* For commercial market entry (small market) < $ 50/kA-m* For medium commercial market < $ 25/kA-m* For large commercial market Four to 15-fold improvement in wire price-performance needed! *at operating field and temperature 3

4 Objectives of SuperPower program focused on meeting wire price-performance metrics Higher self-field critical current in 2G wire by increasing film thickness HTS is still only 1 to 3% of 2G wire compared with 40% in 1G wire and is the only process that needs to be changed in 2G wire for high I c Significantly modify in-field critical current performance of 2G wire Maximize potential of rare-earth, dopant, nanostructure modifications to tailor in-field critical current in device operating conditions Reduce wire cost by high efficiency, simpler processes Silver electrodeposition instead of sputtering Substrate planarization instead of electropolishing + buffer Improved MOCVD precursor conversion efficiency (only 15% now) Reduce wire cost by increased yield Develop new and enhanced on-line QA/QC tools Added value to customer with advanced wire architectures Multifilamentary wire for low ac loss 4

5 Program relevance to DOE-OE mission Strongly tied to the DOE-OE mission through the development of 2G HTS wires that meet all the necessary requirements (piece length, performance, cost, and manufacturing capacity) of systems that are being constructed to modernize the electric power grid and enhance the reliability and security of the energy infrastructure. The program has a direct impact on OE sub program goals namely, development of prototype wire achieving 1,000,000 A-m and production of HTS coil operating in applied magnetic fields up to 5 T at 65 K. 5

6 SuperPower s 2G wire is based on high throughput processes & superior substrate High throughput is critical for low-cost 2G wire and to minimize capital investment SuperPower s 2G wire is based on high throughput IBAD MgO and MOCVD processes Use of IBAD as buffer template provides the choice of any substrate Advantages of IBAD are high strength, low ac loss (non-magnetic, high resistive substrates) and high engineering current density (ultra-thin substrates) < 0.1 mm 20μm Cu 2 μm Ag 1 μm YBCO - HTS (epitaxial) ~ 30 nm LMO (epitaxial) ~ 30 nm Homo-epi MgO (epitaxial) ~ 10 nm IBAD MgO 100 nm 50μm Hastelloy substrate 20μm Cu YBCO LaMnO 3 MgO (IBAD + Epi layer) Y 2 O 3 Al 2 O 3 6 Hastelloy C-276

7 SuperPower 2G wire program strategy In FY09 SuperPower s technology operations consolidated in Houston, enabling total focus on manufacturing in Schenectady. Manufacturing objectives High yield, high volume operation On-time delivery of highquality wire Incorporate new technology advancements Technology objectives High performance wires Highly efficient, lower cost processes Advanced wire architectures Successful transition to manufacturing Manufacturing Operations in NY SuperPower Manufacturing at Schenectady, NY Customers SP Houston National Labs Technology in Houston UH subcontract in DOE-SP program CRADAs Best of both worlds: strong and concentrated emphasis on technology development & manufacturing

8 Full-fledged R&D operation in Houston R&D equipment for entire 2G wire processing operation moved to Houston & set up. Five SuperPower scientists managing operations at Houston full-time Ten graduate students and two research faculty supporting R&D activities Technology advances transitioned to manufacturing, has led to new product offering $ 3.5 M Emerging Technology Fund award from state of Texas provides new pilot-scale equipment for SuperPower-Houston & additional resources 8

9 Crtiical current (A/12 mm) Improved pinning by Zr doping of MOCVD HTS wires Systematic study of improved pinning by Zr addition in MOCVD films at UH Process know-how transitioned to SuperPower % 2.5% 5% 7.50% 10% 12.50% 1.0 T, 77 K Angle between field & tape normal ( ) Two-fold improvement in in-field performance achieved! Process for improved in-field performance successfully transferred to manufacturing J c (MA/cm 2 ) Critical current (A/4 mm) Standard Production wire Enhanced Zr doped production wire c axis Angle between field and c axis ( )

10 Enhanced in-field performance of Zr-doped wires transitioned to long lengths Even with 16% lower self-field I c, Zr-doped wire exhibits 80% higher I c at B c, and 71% higher I c at min I c angle compared with standard wire Very uniformity of in-field I c over 130 m of Zr-doped wire (~ 3%) 10

11 Benefit of Zr-doped wires realized in coil performance Coil properties With Zr-doped wire With undoped wire Coil ID 21 mm (clear) 12.7 mm (clear) Winding ID 28.6 mm mm # turns G wire used ~ 480 m ~ 600 m Wire I c 90 to 101 A 120 to 180 A Field generated at 65 K 2.5 T 2.49 T Same level of high-field coil performance can be achieved with Zr-doped wire with less zero-field 77 K I c, less wire and larger bore

12 2010 effort on Zr-doped MOCVD wires In 2009, we fixed the HTS film composition at Y 0.6 Gd 0.6 -Ba-Cu-O (based work on undoped compositions) and found optimum Zr doping to be 7.5% Also, growth rate had to be reduced four-fold to 0.13 µm/min to achieve self-assembly of BZO and accompanying improved in-field performance In 2010 we sought to determine If there is a rare-earth combination and content that works better with Zr-doped MOCVD wires (most BZO literature is on pure Y or pure Gd) How to regain the growth rate (affects wire throughput) Fixing Zr dopant level at 7.5%, we investigated influence of HTS film thickness influence of Y : Gd ratio with a fixed (Y+Gd) value influence of Y+Gd value at a fixed Y:Gd ratio comparison of Gd-Y, Sm-Y, and Gd-Sm at a fixed rare earth 1 + rare earth 2 content modified Ba-Cu composition and effect on growth rate

13 Critical current (A/12 mm) Critical current (A/12 mm) Improvement with Zr in thicker films % Zr, 1 pass 7.5% Zr, 1 pass 1.0 T, 77 K Angle between field and c axis ( ) 0% Zr, 2 passes 7.5% Zr, 2 passes 1.0 T, 77 K Angle between field and c axis ( ) Critical current (A/12 mm) All samples were of composition Y 0.6 Gd 0.6 BCO % Zr, 3 passes 7.5% Zr, 3 passes 1.0 T, 77 K Angle between field and c axis ( ) Improvement in in-field critical current of Zr-doped wires increases with film thickness

14 Improvement in in-field critical current of Zr-doped wires increases with thickness

15 All samples made in one run with 7.5% Zr. Y+Gd maintained at 1.2 but ratio of Y:Gd changed from 1.2:0 to 0:1.2 in steps of 0.2 Critical current (A/12 mm) Influence of Y:Gd ratio B c, 77 K Y1.2Gd0.0 Y0.8Gd0.4 Y0.6Gd0.6 Y0.2Gd1.0 Y0.0Gd Magnetic Field (T) Improved I c retention at low fields, B c (< 0.5 T) with decreasing Y:Gd ratio J c (MA/cm 2 ) I c / I c (B = 0) Critical current (A/12 mm) Gd content Y content B c, 77 K 0 Y1.2Gd0.0 Y0.6Gd0.6 Y0.2Gd1.0 Y0.0Gd J c (MA/cm 2 ) Magnetic Field (T)

16 Critical current (A/12 mm) Influence of Y:Gd ratio Y1.2Gd0.0 Y1.0Gd0.2 Y0.8Gd0.4 Y0.6Gd0.6 Y0.4Gd0.8 Y0.2Gd1.0 Y0.0Gd T, 77 K Angle between field and c axis ( ) Increasing I c in the vicinity of B a-b with decreasing Y:Gd ratio while I c in the vicinity of B c is constant at 25 to 30% retention Higher minimum I c with decreasing Y:Gd ratio I c / I c (B = 0) Y1.2Gd0.0 Y1.0Gd0.2 Y0.8Gd0.4 Y0.6Gd0.6 Y0.4Gd0.8 Y0.2Gd1.0 Y0.0Gd Angle between field and c axis ( ) 1.0 T, 77 K

17 Additional defect structure in Gd1.2BCO wires for better B wire pinning Y1.2Gd0 Y0Gd1.2 BZO epitaxial pa rticle BZO BZO (111) (111) particles particles 20 nm 20 nm BZO (111) particles along a-b plane in Gd1.2BCO BZO epitaxial particle 5 nm TEM by C. Cantoni & A. Goyal, ORNL BZO BZO rod rod

18 Influence of Y:Gd changes at lower temperatures K, 5T Gd1.2 Y1.2 Y0.6Gd y = x R= Angle [deg] Y Gd 1.2-x x Measurements by, ORNL Best in-field performance switches from Gd 1.2 to Y 1.2 composition with decreasing temperature Higher T c of Gd 1.2 composition could be a reason More details in ORNL-SuperPower CRADA Presentation, Wed, 1:00 p.m.

19 Influence of Y+Gd content 7.5% Zr in all samples Y content = Gd content Y+Gd content varied Y0.65Gd0.65 Y0.7Gd0.7 Y0.75Gd0.75 Y0.8Gd0.8 zero field I c (A/12 mm) Y + Gd content Ic at 1 T, to tape (A/12 mm) Critical current (A/12 mm) T, 77 K Angle between magnetic field and c axis ( ) Critical current can be tuned in desired orientation of magnetic field in application by modifying total rare earth content even with a fixed Zr %!

20 Thicker (Gd,Y) 2 O 3 precipitates along a-b plane in high (Gd,Y) wires (Y,Gd)1.2 (Y,Gd)1.3 (Y,Gd)1.4 (Y,Gd) T, 77 K I c / I c (B=0) Angle beteweend field and c axis ( ) More details in ANL-SuperPower CRADA Presentation, Thu, 8:00 a.m. TEM by Dean Miller, ANL

21 In-field performance of Zr-doped films is drastically modified by rare earth content Zr content maintained at 7.5% in all three samples Y 1.2 Y0.6Gd0.6 (Y,Gd)1.5 Y T, 77 K Critical current (A/12 mm) c axis (Y,Gd) Angle between field and c axis ( ) 20 nm Fewer defects along a b plane in Y 1.2 ; defects prominent along a b plane in (Y,Gd) 1.5

22 With optimized (Y,Gd)-Ba-Cu-O, higher growth rates can be regained In 2009, (Y,Gd)-Ba-Cu-O composition optimized for undoped films was used With this composition, growth rate had to be reduced from 0.5 μm/min to 0.13 μm/min to achieve improved infield performance with Zr doping In 2010, the Ba-Cu composition was optimized specifically for Zr-doped films Critical current (A/12 mm) μm/min 0.4 μm/min 7.5% Zr 1.0 T, 77 K J c (MA/cm 2 ) Angle between field and c axis ( ) With new (Y,Gd)-Ba-Cu-O composition, growth rate tripled to 0.4 µm/min in 0.5 µm films major impact on throughput

23 Recipe for higher growth rate Zr-doped MOCVD transferred to manufacturing Critical current (A/12 mm) % Zr 1.0 T, 77 K 0.5X growth rate : FY'09 recipe 1X growth rate : FY'10 recipe Angle between field and c axis ( )

24 Routine manufacturing of Zr-doped wires in long lengths 400 Critical current (A/cm) Tape Length (m) Long wires with Zr-doping with critical current of 250 to 300 A/cm are now a standard in our manufacturing operation

25 I c [A/cm] Superior performance of 2010 Zr-doped MOCVD production wires H//c 75K 40K best undoped FY'09 Zr-doped FY'10 Zr-doped μ 0 H [T] Measurements by B. Maiorov & L. Civale, LANL Production wires with new composition exhibit significantly improved performance over range of temperatures and magnetic fields More details in LANL-SuperPower CRADA Presentation, Wed, 3:30 p.m. 5K 2010 Zr-doped production wires show: large I c increase at low temperatures at all fields up to 7 T I c increase at high temperatures at high fields. absence of α at low T very low α~0.27 at 75K

26 Superior performance of 2010 Zr-doped MOCVD production wires Production wire 1.1 µm thick HTS film I c (77 K, 0 T) = 310 A/cm 1000 T=4.2K Jc, MA/cm T, K I c - 4mm width (A) Measurements by V. Braccini, J. Jaroszynski, A. Xu,& D. Larbalestier, NHMFL, FSU 100 undoped, B perp. wire undoped, B wire FY'09 Zr-doped, B perp. wire FY'09 Zr-doped, B wire FY'10 Zr-doped, B perp. wire FY'10 Zr-doped, B wire 1 10 B (T) Zr-doped production wires with new composition exhibit significantly improved critical current at 4.2 K in high magnetic fields up to 30 T!

27 Develop high efficiency processes (higher throughput, lower cost) Goal: Substrate planarization to eliminate electropolishing & double buffer throughput Demonstrated planarized yttria and planarized alumina on unpolished substrates. Will be covered in CRADA presentations with LANL & ORNL Goal: Improved MOCVD precursor conversion efficiency Goal: Electrodeposition of silver on HTS film instead of sputtering

28 Electrodeposition of silver 2009: With NREL, demonstrated 3X reduction in silver thickness using benign Cu electroplating solution chemistry. Thicker silver is standard in 2G wire now mainly to protect HTS film from acidic electroplating solutions used to apply Cu stabilizer New chemistry is benign enough to apply even directly on YBCO 2010: Electrodeposition of silver in collaboration with NREL Ag in 2G wire is a limiting factor in production capacity and wire cost Electrodeposition is a lower-cost alternative to vacuum sputtering now used Can be done in tandem with copper plating further increases production capacity Enabler for a low ac loss wire Cu Ag HTS substrate 100 μm Cu

29 Electrodeposition of silver Silver nitrate in organic solvent Process done in a reel-to-reel operation Contact resistivity ~ 4 µωcm2 Over current capability with ~ 2 µm electrodeposited Ag = 20% more than Ic: comparable with sputtered Ag 400 Burn out at 207 A, 360 µv Voltage (µv) I c = 171 A Critical Current [A] More details in NREL-SuperPower CRADA Presentation, Thu, 9:00 a.m.

30 Scaled up electrodeposition of silver Process scaled up to 100 m lengths at 60 m/h* even in a small researchscale system Critical current (A/12 mm) As HTS deposited Tape Position (m) Critical current (A/12 mm) After Ag Electrodeposition Tape Position (m) Critical current of HTS wire maintained over 100 m length after electrodeposition of silver & after oxygenation * 4mm wide equivalent Critical current (A/12 mm) Electrodeposition + oxygenation Tape Position (m)

31 Critical current (A/12 mm) Transport Ic measurement on 100 m long wire with electrodeposited silver Tape position (m) Transport I c of 200 to 250 A/cm measured over 100 m through electrodeposited silver Silver-HTS interface is good for current transfer Silver surface is good enough for press electrical contacts ED Ag is able to sustain 10 to 20% more current beyond take-off current Silver electrodeposition is a scalable process for lower wire cost and is an enabler for multifilamentary 2G wire Voltage (µv) Current (A)

32 2010 2G Wire Manufacturing Objectives 2009: Demonstration of kilometer-long 2G wires with minimum critical current of 282 A/cm 2009: Multiple world records (best: 300,000 A-m); still holding 2010: Focused on high-yield manufacturing Enhanced on-line QC tools Routine manufacturing of Zr-doped Advanced Pinning wire: new product offering Reduce cost; improved price-performance metrics Critical Current (A/cm) Critical Current * Length (A-m) Position (m) 320,000 1,065 m 280, A-m to 300,330 A-m 1,030 m 240,000 in seven 200,000 years 935 m 160, m 120, m 80, m 427 m 40,000 1 m 18 m 97 m 206 m 158 m 0 62 m Nov-01 Jul-02 Mar-03 Nov-03 Aug-04 Apr-05 Dec-05 Aug-06 Apr-07 Jan-08 Sep-08 May-09 World Records 32

33 On-line Vision system in pilot MOCVD Black and white images are taken every ~15 mm of the wire as it emerges from the MOCVD deposition chamber Vision inspection algorithms examine each image for certain qualities or changes Each quality is assigned a value by its algorithm. A map of the wire is generated by plotting the image s quality value as a function of wire position The quality map is compared with Ic over wire length 0 Training on Start of MOCVD Tape Partial Training Used COVG Ic1T Defect Code Value (%) Ic-1T (Amps) ,000 1,050 1,100 1,150 1,200 1,250 1,300 Absolute Position (m)

34 Drawbacks of Vision system with relative training The normal range was initially established by training the vision software on images of each wire at the beginning of their processing through MOCVD. Thus, the normal range was relative to that wire only. This approach had several drawbacks The importance of process drift over time was ignored As each wire sets its own normal range, only limited comparisons between wire were possible The values for the partial training images were noticeably different from the values for the adjacent images, creating noise in the plot

35 Vision system with reference training: a good predictor of critical current of long wires Training has been replaced by the use of a set of reference images from a previously inspected MOCVD tape with known good I c Comparisons of quality map with relative training against quality map with reference training show a marked difference Reference training is found to be an even better predictor of I c variation and tape quality Process drift is more easily discerned Defect Code Value (%) Training from Reference Images No Partial Training ,000 1,050 1,100 1,150 1,200 1,250 1,300 Absolute Position (m) COVG Ic1T Ic-1T (Amps) Real-time prediction of Ic during MOCVD process enabled by improved on-line vision system

36 On-line Ellipsometry system in buffer deposition Thickness of alumina barrier layer is critical to avoid diffusion of substrate species Previously QC of alumina thickness was done off line at completion of run, samples taken from both ends of 1,400 m long tape New, in situ ellipsometry system installed in pilot buffer for real-time thickness of alumina & other buffers

37 Significant improvement in quality of production wires in 2010 % of Production wires % wires > A/cm 25% 60% 300 A/cm 8% 22% Critical current (A/cm)

38 Significant improvements in volume of production wires in 2010 Routine single-piece production length is 1,400 meters through every single step In 2010, we produced Average of 4 wires/month exceeding 200,000 A-m sellable product Average of 1 wire/month exceeding 300,000 A-m sellable product (A-m calculated based on sum of individual piece lengths obtained from each long wire times critical current) YTD Increase in CY 10 Monthly average Meters (4 mm) 8,625 12,821 48%

39 Advancing HTS adoption by enhancing value to the customer True measure of value to end customer best represented by: field and temperature of application Key drivers to improve this measure: Reduction of Cost/Price ($/m) Increase of global I c at self field and 77K Increase of I c at application field and temperature utilizing advanced pinning techniques

40 2009 to 2010 value enhancement Price reduction ~10% Average Selling Price reduction year over year Pricing is more market-driven than cost-driven Major drivers of reduction of costs: Improved yield through MOCVD process Improved productivity Buffer machine speeds Post MOCVD processing speeds Km/direct labor ratio Global I c (self 77K ) 15-25% average improvement (80A to ~100A) Integration of R&D efforts regarding MOCVD Enhanced quality assurance in situ measurements

41 2009 to 2010 value enhancement (cont d.) Incorporation of Advanced Pinning (AP: Zr-doped MOCVD) Up to 100% increase of I c at application field and temperature Transition from R& D to Manufacturing 2 typical representative examples shown below Operating Condition (Field wire) I c -non AP* (A/4mm) I c -with AP* (A/4mm) Improvement 60 K, 2 T % 30 K, 2T % *Base-line I c of 100 A/4mm at 77K,self field

42 2009 to 2010 value enhancement summary Application Temperature (K) Field (T) $/ka-m temp and field) $/ka-m temp and field) Improvement Cable %* Coils % Rotating machinery etc % * Improvement derived from cost and self-field I c gains only

43 Rapidly decreasing price of 2G HTS wire through technology advancements 100, m demo 77 K, self field Price ($/ka m) 10,000 1, m demo First year of pilot production 30 K, 2 T 500 m demo 2 to 4x higher throughput 1,000 m demo Creation of separate Manufacturing and R&D facilities Year AP wire (Zr doped) product introduction

44 Goals for wire performance improvements Two-fold improvement in in-field performance achieved with Zr-doped wires Further improvement in I c at B c: Goal is 50% retention of 77 K, zero field value at 77 K, 1 T Improvement in minimum I c controlling factor for most coil performance: Goal is first 30% retention of 77 K, zero field value at 77 K, 1 T and then 50% Together with a zero-field Ic of 400 A/4 mm at 77 K, self field 200 A at 77 K, 1 T in all field orientations. Achieve improved performance levels at lower temperatures too (< 65 K) Critical current (A/cmwidth) Thickness (µm) Goal Critical current (A/4 mm) x Standard MOCVD based HTS tape MOCVD HTS w/ self assembled nanostructures Goal c axis 77 K, 1 T Angle between field and c axis ( )

45 1µ m Control of a-axis growth for higher self-field Ic in thick films Current-blocking a-axis grains nucleate at CuO that forms at the initial stage of HTS film nucleation in MOCVD SP M3714 a-axis misoriented More details in ANL-SuperPower CRADA Presentation, Thu, 8:00 a.m. 45

46 New CRADA with BNL to study nucleation events in MOCVD (001) (002) LMO (002) LMO (004) (005) 20 mm mm 6 mm 4 mm 2 mm CVD 0 mm vapor R θ(deg) YBCO nuclei LaMnO 3 grains Data by S. Solovyov, BNL X 18A beamline Control of nucleation in MOCVD could lead to less a-axis growth in thick films (higher self-field I c ) and (improved in-field I c )

47 Early detection of a-axis growth during MOCVD is valuable for high current wires Critical current predicted based on (006) XRD peak intensity Critical Current (A/cm) YBCO (200)/(006) ratio Predicted critical current (A) Ic=4.95*counts (006)-125 y = x R² = Measured critical current (A) Good correlation between measured I c and (006) XRD peak intensity

48 On-line XRD in new pilot-mocvd system for real-time quality control 48

49 Real-time XRD data during long-length MOCVD HTS wire manufacturing (006) (200) Ic or ReBCO (006)peak/ Non contact Ic XRD peak/ position (for XRD estimated) Good correlation between real-time XRD data & critical current of long 2G HTS wires

50 A wide range of Technology Transfer, Collaborations, and Partnerships with numerous institutions Customers & partners 2G wire engineering to meet applications requirements National laboratories Applied research for 2G wire performance improvements Universities Basic research to understand 2G wire properties Texas Center for Superconductivity University of Houston Comprehensive research agreement on 2G wire development License Agreement executed in 2010 Supports SuperPower technology development operations in Houston ORNL CRADA in eighth year. Optimization of Zr doping in MOCVD through microstructural & in-field J c studies Transfer of know-how from research MOCVD system at ORNL previously loaned from SuperPower including new UV-assisted MOCVD! Substrate planarization using alumina to replace electropolishing More details in ORNL-SP CRADA presentation tomorrow LANL CRADA in tenth year System for reel-to-reel I c measurements of long wires in a magnetic field Planarization process & equipment know-how to replace electropolishing More details in LANL-SP CRADA presentation tomorrow 50

51 Technology Transfer, Collaborations, and Partnerships ranging from Universities to device manufacturers ANL CRADA in sixth year Understanding current limiting factors through coordinated characterization Optimization of Zr incorporation in MOCVD wires More details in ANL CRADA presentation on Thursday NREL: CRADA in third year Silver electrodeposition for lower-cost wire More details in NREL-SP CRADA presentation on Thursday BNL: Understanding of nucleation in MOCVD to improve I c (S. Solovyov) FSU: TEM, Flux pinning studies on MOCVD wires, High-field coil development (D. Larbalestier, V. Braccini, J. Jaroszynski, A. Xu, D. Markewicz, H. Weijers ) NIST: Effect of strain on pinning, new cable approach (D. van der Laan) NRL: Axial strain, transverse pull tests (R. Holtz) Baldor Electric: 2G wire testing and engineering for Naval Generator (Rich Schieferl) DOE SPI program: 2G conductor design & engineering for FCL DOE-SPI project (Juan Carlos Llambes, Drew Hazelton) Numerous customers: 2G conductor engineering for several applications FCL, magnets, cables, ROEBEL cables, current leads, high-field coils 51

52 FY10 Goals and Performance Objective: Improved pinning for enhanced high-field performance Goal: Enhance critical current and recover high growth rates in Zr-doped wires FY09: 28% self-field retention in I c at 77 K, 1 T, B wire in R&D wires FY10: Achieved 39% retention in R&D wire % retention FY10: 25 30% routine in production wires 250 at 1 T! Investigated role of rare-earth in Zr-doped 200 wires in detail Continuously improving I c at 77 K, 1 T with increasing Gd content Superior performance at 65 K in Y rich films With increasing Y+Gd content, I c continuously increases when B wire and continuously decreases when B wire Enhancement with Zr-doped composition even better in thicker films in all orientations 130% vs. 91% at B wire, 74% vs. 22% at minimum I c orientation. Growth rate of Zr-doped MOCVD process tripled to 0.4 µm/min with optimized Ba-Cu composition Critical current (A/12 mm) B wire, 77 K Magnetic Field (T) 100% 80% 60% 40% 20% 0% Zero field I c retention 52

53 FY10 Goals and Performance Objective 250 A/cm in routine production, Zr-doped wires as new product offering, improve price performance & bring new MOCVD system into operation Substantial increase in I c of production wires Monthly production average increased by ~ 50% to ~ 13,000 meters Zr-doped MOCVD process fully transitioned to production: now a standard product offering (AP: Advanced Pinning wire) 55 to 65% improvement in I c over FY09 Zr-doped production wire at high fields Wire price-performance improved by 35% for cables and by ~ 200% to ~ $ 100/kA-m for 30 K, 2 T applications New MOCVD system with 9-track helix (50% more output than current system) installed & operational % wires > A/cm 25% 60% 300 A/cm 8% 22% J 4.2 K in field (A/4 mm) Production AP wires FY 09 FY 10* 10 T, B wire T, B wire T, B wire 1,219 1, T, B wire 1,073 1,769 * J c = 50 MA/cm 2 at 4.2 K, 0 T 53

54 FY10 Goals and Performance Objective: Develop high efficiency processes (higher throughput, lower cost) Goal: Develop electrodeposition of silver and demonstrate long lengths Working with NREL, successfully developed electrodeposition process as an alternative to sputtering of silver overlayer Overcurrent capability comparable to sputtered silver (20% over Ic for 2 µm Ag) Scaled up process to 100 m lengths with good I c, current transfer & stability Goal: Substrate planarization to eliminate electropolishing & double buffer throughput (also to use variety of substrates) Worked with LANL on planarization with yttria and with ORNL on planarization using alumina 20 m lengths of planarized substrate with yttria and alumina demonstrated Goal: Develop improved MOCVD reactor for better precursor to HTS film conversion efficiency Based on modeling of present MOCVD reactor Developed enhanced reactor design 54

55 FY10 Goals and Performance Objective: QC tools to qualify new wire requirements Goal: Install on-line XRD in new Pilot MOCVD system On-line XRD installed and (006) peak intensity of long wires monitored in real-time and correlated with I c over length Goal: Improve on-line vision system in pilot MOCVD, install on-line ellipsometer in pilot buffer system On-line vision system in pilot MOCVD trained to more accurately predict I c non uniformity of long tapes. Routinely used as QC tool for production On-line ellipsometer installed in proto buffer system for real-time thickness monitoring of buffer layers in production wires Goal: Use reel-to-reel in-field measurement system for long wires Reel-to-reel system constructed in FY 09 with LANL s magnet stage used to qualify in-field critical current uniformity of Zr doped production wires 55

56 Reel-to-reel in-field measurement system set up based on technique developed at LANL LANL provided a magnet stage (0.52 Tesla over 7.5 cm) for in-field measurement on long tapes at all field orientations (360 ) & associated testing know-how. SP constructed a reel-to-reel system with sensors, controllers and software using this magnet stage. 56

57 FY11 Plans Manufacturing of long-length, high current wires at high throughput Increase self-field performance of production 2G wires by 25% Increase in-field performance of Zr-doped AP wires by additional 25% Increase production capacity and throughput by 50-75% Decrease cost by 20-30% Double volume of 500+ continuous meter wires Improved pinning for enhanced high-field performance Develop new techniques for consistent nanocolumnar structures to fabricate thick HTS films MOCVD with high critical currents in high fields. Achieve a 50% improvement in in-field critical current over the already improved values, over a range of temperatures and magnetic fields. Establish a new variable temperature-field-angular system capable of high current measurements Transition improvements made in R&D wires to production 57

58 FY11 Plans Develop high efficiency processes (higher throughput, lower cost) Construct new MOCVD reactor with improved reactor design and plasma enhancement to increase conversion efficiency of precursor to HTS film by 25 to 50% Work with ORNL to develop UV-enhanced MOCVD to increase conversion efficiency of precursor to HTS film Implement repeatable electrodeposition of silver in 100+ m lengths with uniform thickness and demonstrate all electrodeposited stabilizer layers (silver + copper) over 100 m lengths Establish substrate planarization process to fabricate 100+m and optimize the buffer stack to achieve critical current performance similar to those obtained with electropolished substrates 58

59 FY11 Plans QC tools to qualify wire requirements Optimize use of on-line XRD in new Pilot MOCVD system to assure high-yield operation Use reel-to-reel in-field measurement system to qualify and improve infield performance of long wires Use 2D I c analysis as routine QC procedure to qualify and improve 2D I c uniformity of long tapes Develop advanced 2G wire to meet customer requirements Optimize newly constructed pilot system for multifilamentary 2G wires to produce 100+m lengths of low ac loss conductor and use to fabricate and test prototype coils and cables 59

60 FY11 Plans Establish Specialty Products Facility at Houston Establish new SuperPower division at UH Energy Research Park Enable rapid transfer of R&D from University of Houston collaboration to pilot-scale manufacturing Procure, install and bring into operation new pilot-scale MOCVD system at the Specialty Products Future location of SuperPower facility Specialty Products Facility Install post-hts processing and test equipment (silver deposition, oxygenation, 5 m transport I c system, non contact I c system) Staff new division with existing scientists as well as new engineers and technicians 60

61 SuperPower is committed to HTS wire R&D to reach price-performance requirements of commercial market Price ($/ka m) 1, K, 0 T, with R&D 77 K, 0 T without R&D 65 K, 3 T with R&D 65 K, 3 T, without R&D 50 K, 3 T with R&D 50 K, 3 T, without R&D commerical market entry threshold medium commercial market requirement large commercial market requirement Commercial market requirements could be reached five to 10 years sooner with R&D DOE support for HTS program is critical to maintain National Lab & University support