15 Prospect Street, Room 021 Voice: (203)

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1 Weihua Guan Contact Information Research Interests Education 15 Prospect Street, Room 021 Voice: (203) Becton Center, Yale University New Haven, CT USA Web: Lab-on-a-chip devices, Biosensing and Actuation, Bio-Electronics, Semiconductor Device Physics, Device Fabrication, Micro/Nanofluidics, Electrokinetic Phenomena, Point-of-care Testing. Yale University, New Haven, Connecticut, USA Ph.D., Electrical Engineering expected May 2013 M.Phil., Electrical Engineering May 2011 M.Sc., Electrical Engineering May 2011 Graduate University of Chinese Academy of Sciences, Beijing, China M.Sc., Microelectronics and Solid-State Electronics June 2008 Nanjing University of Science and Technology, Nanjing, China B.S., Electrical Engineering June 2005 Awards and Honors Major Fellowships Research Experiences Student Travel Award, 56 th EIPBN Conference, 2012 Graduate Student Assembly Conference Travel Award, Yale University, 2012 Chinese Government Scholarship for Outstanding Self-financed Students Studying Abroad, 2011 Outstanding Graduate Award, Graduate University of the Chinese Academy of Sciences, 2008 LIU Yongling Scholarship, Chinese Academy of Sciences, 2008 Distinguished Scholarship, Institute of Microelectronics, Chinese Academy of Sciences, 2007 Outstanding Graduate Award, Nanjing University of Science and Technology, 2005 Best Undergraduate Thesis, Nanjing University of Science and Technology, 2005 Distinguished Scholarship, Nanjing University of Science and Technology, (awarded to top 1% outstanding undergraduate students) Mintron Scholarship, Mintron Enterprise Co. Ltd., Taiwan, 2003 Howard Hughes Medical Institute International Student Research Fellowship, Yale University Fellowship, Research Assistant, with Prof. Mark A. Reed September present Yale University, New Haven, CT, USA - Realization of artificial solid-state voltage-gated ion channels - Demonstrated field effect reconfigurable ionic diodes - Field effect detection of surface charges at electrolyte/dielectric interface - Experimentally realized world s first aqueous Paul trap device - Rediscovered long overlooked AC electrophoretic (ACEP) phenomena - Chemical Beam Epitaxy (CBE) growth of GaN nanowires Research Assistant, with Prof. Ming Liu September June 2008 Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China - Discovered doping can improve resistive switching memory s yield - Experimental research on oxide based resistive switching memory devices - Modeling of retention performance for metal/semiconductor nanocrystal memories - Experimental research on metal nanocrystal nonvolatile memory devices

2 Research Assistant with Prof. Yingjun Meng December 2004-June 2005 Nanjing University of Sciences and Technology, Nanjing, China - Realization of a wireless message-transmitter in sensor network systems - Co-development of microprocessor hardware and assembly language based software Teaching Experiences Teaching Fellow, Electrical Engineering, Yale University Fall 2010, 2011, and Introduction to Electronics (EENG 200), core course for undergraduate non-majors - Led lab session, presented guest lectures Teaching Fellow, Applied Physics, Yale University Spring 2011, 2012 and The Technological World (APHY 110), science course for undergraduate non-majors - Led discussion session, graded homework Teaching Fellow, Physics, Yale University Spring Advanced General Physics (PHYS 180a), core course for undergraduate non-majors - Led discussion session, graded homework Teaching Fellow, Electrical Engineering, Yale University Fall Introduction to Nanoscience (EENG 001), science course for undergraduate non-majors - Graded homework, wrote exams Professional Societies Professional Activities Computational Skills Patents Conference Posters New York Academy of Sciences, Member, since 2011 American Physics Society (APS), Student Member, since 2009 Institute of Electrical and Electronics Engineers (IEEE), Student Member, since 2008 Journal Reviewer: IEEE Electron Device Letters, Nanotechnology, Applied Physics Letters, Journal of Physics D: Applied Physics, Semiconductor Science and Technology, Materials Science and Engineering: B, and IEEE Transactions on Nanotechnology, Analyst, Lab on a Chip. Languages: C, C++, MATLAB, Python, L A TEX, HTML. Software: COMSOL, LabView, Eagle, L-Edit, SolidWorks. 1. Spatial-Temporal Electric Field Sensing System. US provisional patent. 2. System and Method for Trapping and Measuring a Charged Particle in a Liquid. US patent issued, US B2. 3. Dyadic transition group metallic oxide non-volatilization electric resistance transition type memory, China patent issued, CN B. 1. W. Guan, R. Fan, and M. A. Reed. Solid-state Nanofluidic Ion Channels. Gordon Research Conference-Nanostructure Fabrication, July 15-20, 2012, Biddeford, ME, USA. 2. P. S. Krstić, M. A. Reed, W. Guan, and J. H. Park. DNA Transport and Sequencing Through a Quadrupole Gate NHGRI DNA Sequencing Technology Development Grantee Meeting, April 4-6, 2011, San Diego, CA, USA. 3. P. S. Krstić, M. A. Reed, W. Guan, and J. H. Park. DNA Transport and Sequencing Through a Quadrupole Gate NHGRI DNA Sequencing Technology Development Grantee Meeting, March 8-10, 2010, Chapel Hill, NC, USA. 4. P. S. Krstić, M. A. Reed, S. Joseph, and W. Guan. DNA Transport and Sequencing Through a Quadrupole Gate NHGRI DNA Sequencing Technology Development Grantee Meeting, March 29-31, 2009, La Jolla, CA, USA.

3 5. W. Guan, M. Liu, Z. Li, Y. Hu, S. Long, R. Jia. Simulation, Fabrication and Characteristics of Nanocrystal Non-Volatile Memories. 2 nd IEEE International Nanoelectronics Conference, March 24-27, 2008, Shanghai, China. 6. W. Guan, M. Liu, Z. Li, Y. Hu, S. Long, R. Jia. Nanocrystal Non-Volatile Memories: Simulation, Fabrication and Characteristics, 33 rd International Conference on Micro- and Nano-Engineering, September 23-26, 2007, Copenhagen Denmark. Conference and Seminar Talks 1. W. Guan. Field Effect Ionics in Nanochannels. Connecticut Symposium on Microelectronics & Optoelectronics, March 13, 2013, New Haven, CT, USA.(Best Oral Paper) 2. W. Guan. Electrofluidics in micro/nanofluidic systems. Rowland Institute at Harvard, Harvard University, January 14, 2013, Boston, MA, USA.(Invited) 3. W. Guan. Gated Ion Transport in Solid-State Nanochannels. YINQE Seminars, October 19, 2012, New Haven, CT, USA.(Invited) 4. W. Guan, R. Fan, and M. A. Reed. Voltage and Concentration Driven Artificial Nanofluidic Ionic Channels. 70 th Device Research Conference, June 18-20, 2012, University Park, PA, USA. 5. W. Guan, R. Fan, and M. A. Reed. Fabrication and Characterization of Field Effect Reconfigurable Nanofluidic Ionic Diodes: Building Blocks Towards Digitally-Programmed Manipulation of Biomolecules. EIPBN, May 29 - June 1, 2012, Waikoloa, Hawaii, USA. 6. W. Guan, J. H. Park, P. S. Krstić and M. A. Reed. AC electrophoretic effect in inhomogeneous electrical field: potentials for single molecule trapping. APS March Meeting, March 21-25, 2011, Dallas, TX, USA. 7. W. Guan, M. A. Reed, P. S. Krstić, and S. Joseph. Suppression of Brownian motion by electrodynamic confinement in aqueous solution. APS March Meeting, March 15-19, 2010, Portland, OR, USA. 8. R. Munden, A. Vacic. E. Castiglione, W. Guan, C. Broadbridge and M. A. Reed. Aligned Gallium Nitride Nanowire Growth by Chemical Beam Epitaxy Method. APS March Meeting, March 1620, 2009, Pittsburgh, PA, USA. 9. W. Guan, S. Long, M. Liu, W. Wang. Nonvolatile resistive switching characteristics of HfO 2 with Cu doping. MRS Spring Meeting, March 24-28, 2008, San Francisco, CA, USA. 10. M. Liu, W. Guan, S. Long, Q. Liu, W. Wang. Excellent Resistive Switching Characteristics of Cu doped ZrO 2 and its 64 bit Cross-point Integration. The 9 th International Conference on Solid-State and Integrated-Circuit Technology, October 20-23, 2008, Beijing, China. (Invited) 11. W. Guan. Research on Next Generation Nonvolatile Memories: Nanocrystal and Resistive Switching Memory. Xi an Jiaotong University, April 8, 2008, Xi an, China. (Invited) 12. W. Guan, S. Long, M. Liu, W. Wang. Resistive switching characteristics of hafnium oxide with Cu doping for nonvolatile memory application. 7 th ECS-International Semiconductor Technology Conference, March 15-17, 2008, Shanghai, China. 13. W. Guan, S. Long, Y. Hu, Q. Liu, Q. Wang, and M. Liu. Resistance switching characteristics of zirconium oxide containing gold nanocrystals for nonvolatile memory application. International Conference on Nanoscience & Technology, June 4-6, 2007, Beijing, China.

4 Journal Publications 1. W. Guan, N. Rajan, X. Duan and M. A. Reed. Quantitative probing of surface charges at dielectricelectrolyte interfaces. Lab on a Chip, 13, 1431 (2013). 2. W. Guan, and M. A. Reed. Electric Field Modulation of the Membrane Potential in Solid-State Ion Channels. Nano Letters, 12, 6441 (2012). 3. J. H. Park, W. Guan, M. A. Reed, and P. S. Krstić. Tunable Aqueous Virtual Micropore. Small, 8, 907 (2012). 4. W. Guan, R. Fan, and M. A. Reed. Field-effect reconfigurable ionic diode. Nature Communications, 2, 506 (2011). 5. W. Guan, S. Joseph, J. H. Park, P. S. Krstić and M. A. Reed. Paul Trapping of Charged Particles in Aqueous Solution. Proceedings of the National Academy of Sciences, 108, 9326 (2011). 6. W. Guan, J. H. Park, P. S. Krstić and M. A. Reed. Non-vanishing ponderomotive AC electrophoretic (ACEP) effect for particle trapping. Nanotechnology, 22, (2011). 7. S. Joseph, W. Guan, M. A. Reed, and P. S. Krstić. A long DNA segment in a linear nanoscale Paul trap. Nanotechnology, 21, (2010). 8. M. Liu, Z. Abid, W. Wang, X. L. He, Q. Liu, and W. Guan. Multilevel resistive switching with ionic and metallic filaments. Applied Physics Letters, 94, (2009). 9. W. Guan, S. Long, Y. Hu, Q. Liu, Q. Wang, and M. Liu. Resistance switching characteristics of zirconium oxide containing gold nanocrystals for nonvolatile memory applications. Journal of Nanoscience and Nanotechnology, 9, 723 (2009). 10. S. Zhang, S. B. Long, W. Guan, Q. Liu, Q. Wang, and M. Liu. Resistive switching characteristics of MnO x -based ReRAM. Journal of Physics D-Applied Physics, 42, (2009). 11. W. Guan, M. Liu, S. B. Long, Q. Liu, and W. Wang. On the resistive switching mechanisms of Cu/ZrO 2 :Cu/Pt. Applied Physics Letters, 93, (2008). 12. W. Guan, S. B. Long, Q. Liu, M. Liu, and W. Wang. Nonpolar nonvolatile resistive switching in Cu doped ZrO 2. IEEE Electron Device Letters, 29, 434 (2008). 13. Q. Liu, W. Guan, S. B. Long, R. Jia, M. Liu, and J. N. Chen. Resistive switching memory effect of ZrO 2 films with Zr + implanted. Applied Physics Letters, 92, (2008). 14. Q. Liu, W. Guan, S. B. Long, M. Liu, S. Zhang, Q. Wang, and J. N. Chen. Resistance switching of Au-implanted-ZrO 2 film for nonvolatile memory application. Journal of Applied Physics, 104, (2008). 15. Q. Wang, R. Jia, W. Guan, W. Li, Q. Liu, Y. Hu, S. Long, B. Chen, M. Liu, T. Ye, W. Lu, and L. Jiang. Comparison of discrete-storage nonvolatile memories: advantage of hybrid method for fabrication of Au nanocrystal nonvolatile memory. Journal of Physics D-Applied Physics, 41, (2008). 16. L. J. Zhen, W. Guan, L. W. Shang, M. Liu, and G. Liu. Organic thin-film transistor memory with gold nanocrystals embedded in polyimide gate dielectric. Journal of Physics D-Applied Physics, 41, (2008). 17. Z. G. Li, W. Guan, M. Liu, S. B. Long, R. Jia, J. Lv, Y. Shi, and X. W. Zhao. Charge storage characteristics of metal-induced nanocrystalline in erbium-doped amorphous silicon films. Thin Solid Films, 516, 7657 (2008). 18. W. Guan, S. B. Long, R. Jia, and M. Liu. Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide. Applied Physics Letters, 91, (2007). 19. W. Guan, S. B. Long, M. Liu, Z. G. Li, Y. Hu, and Q. Liu. Fabrication and charging characteristics of MOS capacitor structure with metal nanocrystals embedded in gate oxide. Journal of Physics D-Applied Physics, 40, 2754 (2007).

5 20. W. Guan, S. B. Long, M. Liu, Q. Liu, Y. Hu, Z. G. Li, and R. Jia. Modeling of retention characteristics for metal and semiconductor nanocrystal memories. Solid-State Electronics, 51, 806 (2007). References Available upon request