SBDUV-APD Solar-Blind Deep UV APDs

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1 SBDUV-APD Solar-Blind Deep UV APDs Industry Day Dr. Y. K. Chen DARPA 9/18/2018 Distribution Statement A (Approved for Public Release, Distribution Unlimited) 1

2 SBDUV-APD Technical Background Distribution Statement A (Approved for Public Release, Distribution Unlimited) 2

3 Motivation: Application Space Possibilities Application Chem-Bio Reagent-less PON Diagnostics Micro-machining NLOS communications Clandestine tagging, targeting, locating (CTTL); synthetic biology identification Compact atomic clocks Potential transitions TacBio partners Biotech industry Manufacturing DoD DoD, medical, biotech industry Commercial, DoD TAC-BIO Blood Samples DNA tagging, targeting, locating and identification Medical diagnostics I. Smolina, Bioorg. Med. Chem., (2008) NLOS communications Distribution Statement A (Approved for Public Release, Distribution Unlimited) 3

4 Raman Spectroscopy for Chem-Bio Detection Chem-Bio Sample (e.g. bacteria, toxins, fungal spores) Excitation laser nm Raman Shifts Detector array Raman Scattering Grating Laser Filter Farsund et al. Biomed Opt. Express Fluorescence of various bio-agents 266 nm excitation 0 ~20 nm Wavelength shift High specificity chemical finger print 10.6 Wavelength shift (nm) T. Jeys et al., Chemical Agent Raman Detection, Chem & Biological Defense Sci. & Tech Conf., 11/14/2011 Arb. Units 24.7 nm Requires additional Identification methods Raman spectroscopy relies on comprehensive database of wavelength shifts in backscattered signal to enable highly specific chem-bio identification Distribution Statement A (Approved for Public Release, Distribution Unlimited) 4

5 Technology Transition TAC-BIO TACBIO I 365 nm TACBIO II 273 nm Tactical Biological (TAC-BIO II) Bio-sensor 6in x 8in x 12.5in 3 lbs (with battery) LED 273 nm Detects particles >1.25 μm ppl sensitivity Identification of 25% smaller particles Average Output Power (W) 250 Aerosol Detection (3um particle detection threshold) CMUVT LEDs P out ~ 3mW λ = 273nm Nichia COTS LED Array P out ~ 15mW λ = 365nm CMUVT LEDs provide much greater signal response than 365nm COTS despite with 5x less output power Joint DARPA-DTRA effort underway to integrate CMUVT LEDs into a TAC-BIO Gen 2 Sources: The Edgewood Chemical Biological Center (ECBC) and The US Army Research Laboratory (ARL) Distribution Statement A (Approved for Public Release, Distribution Unlimited) 5

6 Focus: Chem-Bio Sensing Application Solar-Blind Why UV? Raman x-section (x1e-30 cm2/sr/molecule) Nerve agents 1* GA GB GD High Raman x-section Solar blind region Outside of fluorescence band higher SNR Requirements: Operate at nm with <1pm linewidth Efficient and high power Low cost, compact Robust, few components Highly deployable 1 Deep UV Mid UV Wavelength (nm) 1 Steven D. Christesen et al. UV Raman Spectra and Cross Sections of the G-Series Nerve Agents, Appl. Spectrosc. 62(10), General Dynamics * G. Faris et al. Wavelength dependence of the Raman cross section for liquid water, Applied Optics, Vol. 36 (12), Raman sensitivity for chem-bio increases by >10 3 in the UV vs. current techniques in the infrared Distribution Statement A (Approved for Public Release, Distribution Unlimited) 6

7 Solar Radiation Spectrum Source: Distribution Statement A (Approved for Public Release, Distribution Unlimited) 7

8 Solar-Blind 10 1 DARPA LUSTER Program: Deep UV Laser Source LUSTER Princeton Optronics DPSSL Pulsed CW Output power (W) Optimal wavelength band MIT-LL microchip laser 808 nm pump Deep UV Mid UV *DPSSL: diode pumped solid state lasers Nitride LDs Crylas Excitation Wavelength (nm) Excimer Pulsed DPSSL * CW DPSSL * Laser Diode Argon Coherent Industrial Excimer Large Desktop size Coherent Argon Laser Large tabletop size High power UV laser options are even more limited for low cost and high efficiency Distribution Statement A (Approved for Public Release, Distribution Unlimited) 8

9 Current Deep UV Avalanche Photodiodes Back-Side Illuminated Oxide-Bonded Coated Silicon SP-APD Array Back-Side Illuminated AlGaN/GaN SP-APD (λ cut-off = 370nm) Back-Side Illuminated AlGaN/AlN/SiC p-n PD (λ cut-off = 260nm) Source: Nikzad, et. al, Single photon counting UV solar-blind detectors using silicon and III-nitride materials, Sensors 2016, 16(6), 927, Sampath, et. el, ECS Transactions, 61, 227, 2014 Need solar blind deep UV APD arrays with high gain and cut-off frequency < 250nm Distribution Statement A (Approved for Public Release, Distribution Unlimited) 9

10 SBDUV-APD STTX Broad Agency Announcement Distribution Statement A (Approved for Public Release, Distribution Unlimited) 10

11 BAA Overview Program Objective: Develop and demonstrate semiconductor-based compact solarblind deep-uv avalanche photo-detector (APD) devices and arrays operating at nm wavelength region with single-photon detection when operating in Geiger mode. Integrated APD arrays with dense pitch and filling factor are needed to provide spectral analysis to detect and distinguish bio-chemical species and signatures. Phase I: Period of Performance: 12 months Conceptualize and design an innovative device to demonstrate ultra-high gain solar-blind APD devices and array to operate from 200 nm 250nm. Design APD devices to provide high extrinsic quantum efficiency (>70%) with high multiplication gain (>10E6) for photon-counting with low dark current (<0.1nA) for single-photon detection when operating in Geiger mode. Validate models and simulations. Demonstration of solar-blind deep UV APD devices to reach a TRL level of 2-3. Phase II: Period of Performance: 12 months Fabricate and solar-blind APDs in linear mode and Geiger mode devices and 16x16 array with same elementary performance as Phase I devices Phase II demonstrations of the deep UV APD imager array are expected to achieve a Transition Readiness Level of 4-5. Phase III Dual Use Applications for Commercial/Military: Period of Performance: 12 months Mature and transition prototype devices to be compatible with an identified transition platform by working with military stakeholders. Develop technology for dual-use applications. Distribution Statement A (Approved for Public Release, Distribution Unlimited) 11

12 Program Metrics Table I: Program Metrics of Single Photon Geiger-Mode Avalanche Photodiodes and Arrays Program Metrics Phase I Goals Phase II Goals Phase III Goals Period 12 months 12 months 12 months Wavelength nm nm nm Extrinsic Quantum Efficiency 70% 70% 70% Geiger-Mode Multiplication Gain 10E6 10E6 10E6 Dark Current per diode < 0.1 na < 0.1 na < 0.1 na Elements/Array 1/1 16 x 16 / 1 TBD (> 64x64/ 1) Element-Element Pitch um 100 um TRL 1/1 4-5 > 6 Transition Device Integrated arrays Transition Demo Goal: Enable measurable solar-blind DUV APD technology Distribution Statement A (Approved for Public Release, Distribution Unlimited) 12

13 Deliverables Deliverables ARL will perform characterization on materials and devices Working lasers delivered at end of Phase I, Phase II and Phase III for evaluation No pre-imposed packaging requirements Sample shipment and Testing by ARL Distribution Statement A (Approved for Public Release, Distribution Unlimited) 13