Hydrogen in Semiconductors

Transcription

1 Hydrogen in Semiconductors SEMICONDUCTORS AND SEMIMETALS Volume 34 Volume Editors JACQUES I. PANKOVE UNIVERSITY OF COLORADO AT BOULDER BOULDER, COLORADO NOBLE M. JOHNSON XEROX PALO ALTO RESEARCH CENTER PALO ALTO, CALIFORNIA ACADEMIC PRESS, INC. Harcourt Brace Jovanovich, Publishers Boston San Diego New York London Sydney Tokyo Toronto

2 Contents LIST OF CONTRIBUTORS PREFACE xi xiii Chapter 1 Introduction to Hydrogen in Semiconductors 1 /./. Pankove and N.M. Johnson References 14 Chapter 2 Hydrogenation Methods 17 C.H. Seager I. Introduction 17 II. Plasma and Directed Ion Beam Hydrogenation Methods 18 III. Electrochemical Techniques 27 VI. Other Observations of Hydrogenation 29 References 31 Chapter 3 Hydrogenation of Defects in Crystalline Silicon 35 /./. Pankove I. Introduction 35 II. Hydrogenation Technique 36 III. Passivation of Surface States 37 IV. Passivation of Grain Boundaries 40 V. Passivation of Dislocations 41 VI. Passivation of Implantation-Induced Defects 43 VII. Conclusion 47 References 47 Chapter 4 Hydrogen Passivation of Damage Centers in Semiconductors 49 J.W. Corbett, P. Deäk, U.V. Desnica, and S.J. Pearton I. Introduction 49 II. Brief Survey of Defects 50 V

3 vi III. Electrical Studies 56 IV. Infrared Studies 58 V. Summary 61 Acknowledgments 62 References 62 Chapter 5 Neutralization of Deep Levels in Silicon 65 S.J. Pearton I. Role and Nature of Deep Levels in Si 65 II. Types of Defects and Impurities Passivated 66 III. Thermal Stability of Passivation 83 IV. Prehydrogenation 85 V. Models for Deep Level Passivation 86 References 88 Chapter 6 Neutralization of Shallow Acceptors in Silicon 91 /./. Pankove I. Introduction 91 II. Resistivity Changes Induced by Hydrogenation 92 III. Capacitance Changes Induced by Hydrogenation 100 IV. Models of Neutralized Boron in Silicon 101 V. Changes in IR Absorption Induced by Hydrogenation 103 VI. Effect of Hydrogenation on the Luminescence of Excitons Bound to Acceptors 107 VII. Applications of Hydrogen-Mediated Compensation in Silicon 109 VIII. Conclusion 110 References 110 Chapter 7 Neutralization of Donor Dopants and Formation of Hydrogen-Induced Defects in «-Type Silicon 113 N.M. Johnson I. Introduction 113 II. Neutralization of Shallow-Donor Impurities 116 III. Hydrogen-Induced Defects 126 IV. Future Directions 135 References 136 Chapter 8 Vibrational Spectroscopy of Hydrogen-Related Defects 139 in Silicon M. Stavola and S.J. Pearton I. Introduction 139 II. Local Vibrational Mode Spectroscopy and Uniaxial Stress Techniques 140

4 VÜ III. Vibrational Spectroscopy of Hydrogen-Related Coraplexes 144 IV. Uniaxial Stress Studies of H-Related Complexes 163 V. Hydrogen Motion in the B H Complex 173 VI. Conclusion 179 Acknowledgments 181 References 181 Chapter 9 Hydrogen in Semiconductors: Ion Beam Techniques A.D. Marwick I. Introduction 185 II. Ion Beam Depth Profiling Techniques and Applications 186 III. Lattice Location of Hydrogen in Semiconductors by Ion Channeling 200 IV. Other Topics 219 References 221 Chapter 10 Hydrogen Migration and Solubility in Silicon 225 C. Herring and N.M. Johnson I. Introduction and Overview 225 II. Theoretical Framework 234 III. Experimental Measurements 263 Acknowledgment 347 References 347 Chapter 11 Hydrogen-Related Phenomena in E.E. Haller Crystalline Germanium 351 I. Introduction 351 II. Ultra-Pure Germanium Crystal Growth and Characterization 354 III. Shallow Level Complexes Containing Hydrogen 357 IV. Hydrogen Interacting with Deep Level Centers and Dislocations 368 V. Summary and Discussion 376 Acknowledgments 377 References 378 Chapter 12 Hydrogen Diffusion in Amorphous Silicon 381 J. Kakalios I. Introduction 381 II. Growth of Amorphous Silicon 383 III. Evidence for Bonded Hydrogen 388

5 viii IV. Defect Creation 394 V. Hydrogen Diffusion Studies 407 VI. Models for Hydrogen Motion 423 VII. Hydrogen Glass Model 435 VIII. Diffusion of Molecular Hydrogen 438 IX. Conclusions and Open Questions 440 References 442 Chapter 13 Neutralization of Defects and Dopants in III-V Semiconductors 447 J. Chevallier, B. Clerjaud, and B. Pajot I. Introduction 448 II. Neutralization of Shallow Dopants in III-V Compounds 449 III. Neutralization of Deep Level Centers and Extended Defects 465 IV. Optical Spectroscopy of Hydrogenated III-V Compounds 472 V. Microscopic Structure of the H-Related Complexes 496 VI. Technological Applications of the Hydrogenation of III-V Compounds 502 VII. Conclusion 505 References 506 Chapter 14 Computational Studies of Hydrogen-Containing Complexes in Semiconductors 511 G.G. DeLeo and W.B. Fowler I. Introduction 511 II. Theory of Point Defects in Cystalline Solids 514 III. Hydrogen Interaction with Silicon Dangling Bonds 522 IV. Hydrogen Deep-Level-Defect Complexes in Silicon 525 V. Hydrogen Shallow-Level-Defect Complexes in Silicon 526 VI. Hydrogen Shallow-Level-Defect Complexes in Compound Semiconductors 540 VII. Hydrogen Molecules in Crystalline Silicon 541 VIII. Closing Statement 542 Acknowledgments 543 References 543 Chapter 15 Muonium in Semiconductors 547 R. F. Kiefl and T. L. Estle I. Introduction 547 II. Experimental Methods 550 III. Silicon 560 IV. Other Semiconductors 569

6 ix V. Summary and Conclusions 578 Acknowledgments 582 References 582 Chapter 16 Theory of Isolated Interstitial Hydrogen and Muonium in Crystalline Semiconductors 585 CG. Van de Walle I. Introduction 585 II. Theoretical Techniques for Impurities in Semiconductors 588 III. Location of Hydrogen and Muonium in the Lattice 595 IV. Electronic Structure 600 V. Charge States 610 VI. Motion of Hydrogen Vibrational Frequencies 614 VII. Motion of Muonium 617 VIII. Interaction of Hydrogen with Defects and Hydrogen-Induced Defects 618 IX. Conclusions and Future Directions 619 Acknowledgments 620 References 620 INDEX. 623 OF PREVIOUS VOLUMES 631