Isolation of elements
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1 1 In an IC, devices on the same substrate must be isolated from one another so that there is no current conduction between them. Isolation uses either the junction or dielectric technique or a combination of both. The choice of a particular isolation technique is governed by economic considerations and depends on the degree of isolation required.
2 2 Basically, junction isolation uses an impurity diffusion to produce n-type islands surrounded by p-type materials. The standard industrial technology is the epitaxial-diffused process (EDP). Steps of junction isolation In operation the pn junction so formed is reverse-biased by making the p-type bulk material more negative than any other part of the integrated circuit.
3 3 Polysilicon Polysilicon Principles of dielectric isolation The advantages of this method include low parasitic capacitances and elimination of substrate bias.
4 4 Silicon on insulator technology (SOI) refers to the use of a layered siliconinsulator-silicon substrate in place of conventional silicon substrates. SOI-based devices differ from conventional silicon-built devices in that the silicon junction is above an electrical insulator, typically silicon dioxide or (less commonly) sapphire. The choice of insulator depends largely on intended application, with sapphire being used for radiation-sensitive applications and silicon oxide preferred for improved performance and diminished short channel effects in microelectronics devices. SiO2-based SOI wafers can be produced by SIMOX - Separation by IMplantation of OXygen - uses an oxygen ion beam implantation process followed by high temperature annealing to create a buried SiO2 layer
5 5 Sapphire Sapphire SOS (silicon on sapphire) technology Combination of junction and dielectric isolation. Isoplanar technology
6 6 Polysilicon VIP (V-groove isolation polycrystal back-fill) method Trench isolation. According to this method isolating trenches, 20µm deep and 1µm wide, are formed by plasma etching.
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8 8 This modern isolation technique provides a significant improvement in packing density and performance because of reduced parasitic capacitance.
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10 10 Shallow (sekli) trench isolation Shallow Trench Isolation is a design technique for semiconductors. As the semiconductor industry moves to sub 65 nm levels there is a need for creating very small void free gaps on the wafer sublayer. LOCOS* was used before STI came into the picture. The STI creation process could be described as oxidation deposition lithography etch cleaning process fill chemical mechanical planarization (CMP) There also exists an obvious deep trench isolation complementing the shallow trench isolation. *LOCOS LOCcal Oxidation of Silicon
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