CMOS Manufacturing process. Circuit designer. Design rule set. Process engineer. Set of optical masks. Fabrication process.

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1 CMOS Manufacturing process Circuit design Set of optical masks Fabrication process Circuit designer Design rule set Process engineer All material: Chap. 2 of J. Rabaey, A. Chandrakasan, B. Nikolic, Digital Integrated Circuits, second edition, Prentice Halls, 2002

2 Simplified very basic CMOS Process CMOS inverter n-well process 2

3 A Modern CMOS Process CMOS inverter dual-well trench-isolated process gate-oxide TiSi 2 AlCu Tungsten SiO 2 n+ p-well p-epi poly n-well p+ SiO 2 p+ 3

4 Circuit Under Design V DD V DD M2 M4 V in V out V out2 M1 M3 4

5 5 Its Layout View

6 Silicon ingot Diameter 12 inches (300 mm) Weight 100 Kg

7 Photo-Lithographic Process Oxidation 1000 C optical mask Clean room (class 1-10) process step photoresist removal (ashing) spin, rinse, dry photoresist coating (1um) Typical operations in a single photolithographic cycle (from [Fullman]). stepper exposure acid etch photoresist development Def: Class 1: <1 dust particle per cubic foot In each processing step, an area of the chip is masked out using optical masks, so that the process step is selectively applied to the other regions 7

8

9

10 Example of process step: Patterning of SiO2 Si-substrate (a) Silicon base material Si-substrate Photoresist SiO 2 Si-substrate Chemical or plasma etch Hardened resist SiO 2 (d) After development and etching of resist, chemical or plasma etch of SiO 2 (b) After oxidation and deposition of negative photoresist Hardened resist SiO 2 UV-light Patterned optical mask Si-substrate (e) After etching Exposed resist SiO 2 Si-substrate (c) Stepper exposure Si-substrate (f) Final result after removal of resist 10

11 Doping Recurring process steps (1/2) Diffusion (gas with dopant, o C) Ion implantation Lattice damage (displacement of atoms) àannealing step (1000 o C for slow cooling) Deposition (of layers over the complete wafer) Oxidation [silicon oxide] Chemical Vapor Deposition: gas phase + heat (850 o C) [silicon nitride] Chemical deposition (polysilicon: silane (SiH 4 ) gas over heated wafer (600 o C) à reaction an polysilicon formation Sputtering (for aluminum): evaporation in vacuum chamber

12 Recurring process steps (2/2) Etching (defines 3D patterns on the surface) Wet etching (with acid or basic solutions) e.g. Hydrofluoric acid for silicon oxide Almost isotropic Dry or plasma etching Plasma: mix of nitrogen, chlorine, boron trichloride Strongly anisotropic (steep vertical edges) Planarization (flatten the surface to allow layer deposition) Chemical Mechanical Polishing (CMP) Liquid carrier with a suspended abrasive component

13 Simplified CMOS Process flow Define active areas Etch and fill trenches Implant well regions Active areas: where transistors are Field oxide: insulator between neighboring devices Wells in the active areas Deposit and pattern polysilicon layer Implant source and drain regions and substrate contacts Gate stack Contact doping Create contact and via windows Deposit and pattern metal layers Metal Interconnects 13

14 CMOS Process Walk-Through p-epi p+ (a) Base material: p+ substrate with p-epi layer p-epi p+ SiN 3 4 SiO 2 (b) After deposition of gate-oxide and sacrificial nitride (acts as a buffer layer) p+ (c) After plasma etch of insulating trenches using the inverse of the active area mask 14

15 CMOS Process Walk-Through SiO 2 (d) After trench filling, CMP planarization, and removal of sacrificial nitride n (e) After n-well and V Tp adjust implants p (f) After p-well and V Tn adjust implants 15

16 CMOS Process Walk-Through poly(silicon) (g) After polysilicon deposition and etch n+ p+ (h) After n+ source/drain and p+source/drain implants. These steps also dope the polysilicon. SiO 2 (i) After deposition of SiO 2 insulator and contact hole etch. 16

17 CMOS Process Walk-Through Al (j) After deposition and patterning of first Al layer. Al SiO 2 (k) After deposition of SiO 2 insulator, etching of via s, deposition and patterning of second layer of Al. 17

18 18 Advanced Metallization

19 CMOS Manufacturing process Circuit design Set of optical masks Fabrication process Circuit designer Design rule set Process engineer All material: Chap. 2 of J. Rabaey, A. Chandrakasan, B. Nikolic, Digital Integrated Circuits, second edition, Prentice Halls, 2002

20 Design Rules Minimum line width depend on lithography and process Micron rules: absolute dimensions for intra-layer and inter-layer layouts 20

21 21 Layers in 0.25 µm CMOS process

22 22 Intra-Layer Design Rules

23 23 Transistor Layout

24 24 Vias and Contacts

25 25 Select Layer

26 CMOS Inverter Layout

27 27 Layout Editor

28 Design Rule Checker poly_not_fet to all_diff minimum spacing = 0.14 um. 28

29 Sticks Diagram V DD 3 In 1 Out Dimensionless layout entities Only topology is important Final layout generated by compaction program GND Stick diagram of inverter 29

30 Packaging Requirements Electrical: Low parasitics Mechanical: Reliable and robust Thermal: Efficient heat removal Economical: Cheap 30

31 Bonding Techniques Wire Bonding Substrate Die Pad Lead Frame 31 Gold wires, large inductance

32 Tape-Automated Bonding (TAB) Sprocket hole Film + Pattern Solder Bump Test pads Die Lead frame Substrate (b) Die attachment using solder bumps. (a) Polymer Tape with imprinted wiring pattern. Polymer film 32

33 Flip-Chip Bonding Die Solder bumps Top (where circuit is) Interconnect layers Substrate 33

34 Package-to-Board Interconnect (a) Through-Hole Mounting (b) Surface Mount 34

35 Package Types DIP PLCC PGA 35

36 36 Package Parameters

37 37 Multi-Chip Modules

38 10,000,000 Logic Transistors/Chip 100,000,000 Logic Transistors per Chip (K).10m 1,000, ,000.35m 10,000 1, m %/Yr. compound Complexity growth rate 21%/Yr. compound Productivity growth rate Transistor/Staff Month X x X X X X X 10,000,000 1,000, ,000 10,000 1, Productivity (Trans./Staff-Month)

39 Intel 4004 custom design 2300 PMOS 10 µm process Clock: 108 KHz Area: 3 mm x 4 mm Courtesy Intel

40 Intel 8286 Intel 8486 Courtesy Intel Transition to Automation and Regular Structures Intel 4004 ( 71) Intel 8080 Intel 8085

41 Standard Cell Example [Brodersen92]

42 Standard Cell The New Generation Cell-structure hidden under interconnect layers

43 MacroModules (or 8192 bit) SRAM Generated by hard-macro module generator

44 Soft MacroModules Synopsys DesignCompiler

45 Intellectual Property A Protocol Processor for Wireless

46 Sea-of-gates Random Logic Memory Subsystem LSI Logic LEA300K (0.6 µm CMOS) Courtesy LSI Logic

47 RAM-based FPGA Xilinx XC4000ex Courtesy Xilinx

48 Xilinx Virtex UltraScale

49 IC Production Installed capacity

50 IC Production Breakdown by Region Korea, Japan ~ 2x Europe Taiwan ~ 3x Europe

51 Memory roadmap

52

53 SRAM Layout

54 6T SRAM 28 nm CMOS TSMC Courtesy of Chipworks

55 NVM Applications

56 Multilevel concept: 1 Threshold voltage distribution

57 Multilevel concept: Program and verify mechanism DV T = V step

58 NAND: From gate wrap to 2D planar

59 2012

60 Now: 3D NAND Architectures (Vertical channel) (Vertical gate)

61 Power Delivery Network of a Smartphone Lee et al., IEEE-TCAD Vol.33, pp, 136, 2015.

62 MEMS Global Market

63 MEMS Gyroscopes Traditionally used in navigation when the geomagnetic field is absent (i.e. in space) or disturbed (i.e. on a plane, in a tunnel). NOW used in: Stabilization devices Robotics Tunnel Mining Weapons When the GPS does not work (indoor, in space, in bad weather)

64 MEMS Gyroscopes Traditionally used in navigation when the geomagnetic field is absent (i.e. in space) or disturbed (i.e. on a plane, in a tunnel). NOW used in: Stabilization devices Robotics Tunnel Mining Weapons When the GPS does not work (indoor, in space, in bad weather)

65

66 Basic 1-axis accelerometer F c = 2mvW v m W m v F c = 2mvW

67 Basic 1-axis accelerometer F c = 2mvW v m W m v C 1 C 2 F c = 2mvW Fixed plates

68 Oneaxis accelerometer

69

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