Material Evaporation Application Comment MP P / Optical films, Oxide films, Electrical contacts. Doping, Electrical contacts.

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Gwendoline Booker
6 years ago
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1 for vapour Aluminum (Al) -, Optical, Oxide, Electrical BN liners with lid are recommended due to the reactivity and the fact that Al creeps out. Cooling down of the cell with 1K per minute Antimony (Sb) 6mm Cold Lip Doping, Electrical Arsenic (As) - Cracker, Valved or Effusion Cell III-V, Caps Careful: as molecules -> cracking toxic Barium (Ba) -, Beryllium (Be) 4-6mm Vitreous Carbon Bismuth (Bi) - Blei 4-6mm, Quartz,, VC Mo mit Crucible Boron (B) - Vitreous Carbon Cadmium (Cd) -, Quartz, Oxide growth Doping of III-V semiconductors Doping Doping, Carbide Doping in CdTe Wetting, Reactive with ceramics extremely hard toxic Toxic, melts before Reactivity with C extremely hard, Careful cooling Toxic, high vapour pressures => system contaminations, low sticking Calcium (Ca) 4-6mm - Oxide growth High reactivity Carbon (C) 2-4mm - Carbide growth, doping in MBE, electron microscopy sample preparation Cerium (Ce) - Vitreous Carbon Oxide growth Cesium (Cs) - Near Ambient Quartz, Extremely efficient getter material for N and O high reactivity with O and water

2 Chlorine (Cl) - - Chromium (Cr) 2-4mm - Cobalt (Co) 2-4mm - Solar cell activation Metalising, contacting Magnetic, multilayer materials, functional oxide Copper (Cu) - Surface Science ECR-Plasma source with Alumina plasma Higher vapour pressure material, deposition rate: up to nm/second for vapour Dysprosium (Dy) 2-4mm Erbium (Er) 2-4mm, Doping for Tungsten fluorescence Europium (Eu) 4mm, Doping for fluorescence Gallium (Ga) - or Single Liquid near RT, Filament III-V growth alloys with refractory,, BeO, Quartz Germanium (Ge) -, Quartz Semiconductor, III-V doping Gold (Au) - ( ) Metallising, contacting Hafnium(Hf) 2mm 270 -e-beam Oxide, low K Hydrogen (H) - - Indium (In) - with BN liner with cap Contacts (TCO), solar cells, oxide Thermal Gas Cracker TGC-H or ECR or RF Plasma Source Liquid near RT, alloys with refractory Iridium (Ir) 2mm - low rates Iron (Fe) 4mm - Surface science, magnetic, oxide Lanthanum (La)

3 Lead (Pb) - Lithium (Li) - Lutetium (Lu) Magnesium (Mg) 4mm 4mm Mo with insert Source,, BeO,, Vitreous Carbon, Intercalation doping, ion Careful degassing, reactivity, LiOH, Li2O, Li2O3 327 for vapour Oxide Manganese (Mn) 2-4 mm Single Filament Oxide, magnetic Mercury (Hg) - Near Ambient, Quartz, Methane (CH4) - - (Mo) 2mm - Nickel (Ni) 4-6mm Vitreous Carbon Doping, optical active HgCdTe Semiconductor termination in solar cells, oxide Surface science, magnetic, oxide Toxic -39 7? ECR or RF Plasma Source MoO3 toxic ? Niobium (Nb) 3-4mm RF Plasma Source Nitridation, Nitride Nitrogen (N) - - with BN plasma film growth Oxygen (O) - - Oxide film growth, cleaning Palladium (Pd) 2-4mm - Surface Science Phosphorus (P) - Platinum (Pt) 2-4mm at low rates (1750 C with 0.01nm per minute) Valved Cracker or Valved Effusion Cell for higher growth rates, BeO Phosphide growth, doping atomic surface preparation ECR Plasma Source with plasma Reacts with refractory High reactivity ? melting point of Pt at 1768 C, vapour pressure at 10^- 4mbar at 1747 C relative small. Nearly all s materials have higher vapour pressures

4 Potassium (K) - Source,, Quartz, Doping, intercalation, ion Baking issue, high reactivity for vapour Rhenium (Re) 2mm Rhodium (Rh) 2mm Ruthenium (Ru) 2-4mm Scandium 2-4mm, BeO Selenium - Cracker, or Low Temp Effusion Cell, II-VI Toxic, baking issue, contaminates, reacts with Co (gaskets!) Silicon (Si) wide (4-6mm) Single Filament Cell, High Cell, Doping, growth, surface science Low rates, careful operation Silver (Ag) 4-6mm but easier from Sodium (Na) - Strontium (Sr) 4-6mm Source,Quartz, Low EBE,, Vitreous Carbon Intercalation, ion Higher vapour pressure material, deposition rate: up to nm/second Baking issue, high reactivity Oxide growth High reactivity Sulphur (S) - Cracker or Valved Effusion Cell, II-VI, sulphurization (Ta) 2mm - Oxide Baking issue contaminates vacuum system, reacts with Copper Refactory material, at 100mm measured deposition rate: ~2nm/min, alloys with Si

5 Tellurium (Te) - Thallium (Tl) - Thorium (Th) - Tin (Sn) - Valved Cracker, Quartz, or Single Filament Titanium (Ti) 2-4mm - Tungsten (W) 2mm - II-VI semiconductor, oxide Contacts, TCO, doping Carbide, oxide, Oxide,, electrochemic (WO3) Reacts with Au, wettning, toxic for vapour Toxic, wetting Toxic, radiactive Liquid deposition, wetting, strong outgassing Refactory material, at 100mm measured deposition rate: ~2nm/min Vanadium (V) 2-4mm Contacts, oxide Molybenum Ytterbium (Yb) 4mm Yttrium (Y) Oxide Reacts with Ta Zinc (Zn) - Zirconium (Zr) with low rates 2mm possible, Quartz, High EBE, Oxide Oxide Strong reactivity alloys with W ?

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