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1 Innovation for Sputter Target Bonding: Leveraging the NanoBond Advantage Dr Omar M Knio 180 Lake Front Drive Hunt Valley, MD

2 Outline Company Background Technology and Technology Background Sputter Target Bonding The NanoBond Process Performance Data Conclusions

3 Reactive NanoTechnologies (RNT) Reactive NanoTechnologies, Inc. (RNT) manufacturers and sells NanoFoil -based products and solutions that deliver energy in a controlled and precise manner for joining, energetics and heating.

4 RNT Company Profile Technology initially developed at LLNL (Barbee & Weihs) RNT founded in 2001 by Dr. Tim Weihs and Dr. Omar Knio, both professors at Johns Hopkins University Venture Financed Strong IP Position: Exclusive licenses with LLNL and Johns Hopkins University New Patents From RNT Producing and Selling NanoFoil in multiple forms globally

5 RNT Global Network Manufacturing Sales Office Future Sales Office

6 Outline Company Background Technology and Technology Background Sputter Target Bonding The NanoBond Process Performance Data Conclusions

7 NanoFoil : Nano-Engineered, Localized Energy Source RNT manufactures NanoFoil : -Patented, platform technology -Delivers energy in a controlled and precise manner.

8 NanoFoil Production Magnetron Sputter Deposited Free-standing Foils (capable of µm thickness) Bilayer Thicknesses - 10 to 500nm Foil thickness ranges from µm Use Ni and Al layers Several 1000 layers Rotating Carousel Motor Substrates Sputter Guns

9 NanoFoil Structure Al Ni Initial reactants: Ni and Al Ni + Al --> NiAl + Heat

10 NanoFoil : Predictable and Controllable Heat Source 12 Reaction Velocity (m/s) Reaction Velocity (m/s) Thermo Experiments: As-deposited Experiments: 150 C Predictions: 150 C Predictions: As-deposited Kinetics Annealing increases intermixing and slows the reaction 2w = 2.4nm 2w = 6.3nm Bilayer Multilayer Thickness Period (nm)

11 The NanoBond Solution NanoBond for Joining of Materials using NanoFoil Intermixing of aluminum and nickel NanoFoil nano-layers => Controllable, rapid heating of bond interface only => Formation of strong, uniform, metallic bond Benefits: - Use any solder, flux free -Rapid process - Heat only the interface to be joined or bonded - Limited heating avoids thermal stresses and deflection due to CTE mismatch 7

12 NanoBond Application Focus 1. Sputter Target Bonding Large Area Display - LCD (Al, Mo, Ti, Cr, ITO, TiO2) Data storage Disk drive head (Al2O3) Media (FeCo, NiCo, Cr, etc) Semiconductor (W, TiW, Al, Cu, etc) Photovoltaic (Al, AZO, Mo, etc) 2. Microelectronic Assembly Thermal Interface Materials Connect heat sink to RF power amp Connect heat sink to concentrator PV cell Packaged component attach Assemble LED package to board Sputter Target Power Amplifier LED Assembly

13 Outline Company Background Technology and Technology Background Sputter Target Bonding The NanoBond Process Performance Data Conclusions

14 Thin Film End User Applications for Sputter Targets Solar (PV) Automotive Mirrors Optical Coatings Architectural Glass Semiconductors Disk Drive LCD Displays

15 Sputter Target Bonding Driven by need to cool, and in many cases control the temperature of, the sputter target during deposition. Except in isolated situations (e.g. monolithic design) sputter target typically mounted on a backing plate. In addition to backing plate material and design, target material composition, thermal and mechanical properties of the bond between target and BP are often critical factors in system performance. Until recently, target bonding typically approached using reflow techniques (mainly In based) or using epoxy. Both reflow and epoxy technologies are old and wellestablished technologies, and their advantages and weaknesses are well known.

16 Joining Dissimilar Materials Presents a Challenge Dissimilar metals or Ceramic and Metal shrink at different rates upon cooling Generate large thermal stresses when bonding dissimilar materials using hot plates or furnaces Cracking, de-bonding, or warping of targets is common Ceramic or Metal Target Solder or Braze Cu Backing Plate THIS IS A MAJOR PROBLEM THAT NANOBOND SOLVES!

17 Challenges in Sputter Target Bonding Bond Shop / Materials Supplier Challenges Manual process, no precise Limited choice of solders Deflection Long, continuous process flow not suited for JIT End User / OEM Challenges Machine uptime Arcing Debonding Can t run at the power / rate desired Deflection (change our of targets) BP life

18 Outline Company Background Technology and Technology Background Sputter Target Bonding The NanoBond Process Performance Data Conclusions

19 Bonding a Sputter Target Using NanoBond Process Target for 300 mm Target NanoFoil Target Spark Solder NanoFoil Solder Backing Plate Backing Plate 1. Assembly is bonded under pressure 2. NanoFoil ignites; reaction velocity > 6 m/sec 3. Reacted NanoFoil becomes an inert portion of the bond

20 NanoBonded Ceramic Targets with Tiled Arrays 1000x250mm Glass to Cu 1270x152mm ITO to Cu 1422x250mm TiC to Ti 1600x190mm AZO to Cu

21 Sputter Target Bonding Process Flow Comparison Std Indium Bond Process Receiving De-bond / Prepare BP BSM TG (BP) Mask NanoBond Process Receiving De-bond / Prepare BP BSM TG Mask Apply Solder to BP Apply Solder to TG Apply Wire on BP Time Apply Solder to BP Apply Solder to TG Machine Pre-wet TG/BP Staging Possible (JIT) Position/align TG TG/BP/foil in press jig Bonding NanoBonding Cooling Cooling Apply Weight/Pressure Apply Weight/Pressure Clean bond and TG Clean bond and TG CSCAN CSCAN

22 NanoBond Process Flow Comparison Receiving De-bond / Prepare BP BSM TG Mask Apply Solder to BP Apply Solder to TG Machine Pre-wet TG/BP Prewet Target Prewet Backing Plate TG/BP/foil in press jig NanoBonding Cooling Apply Weight/Pressure Clean bond and TG CSCAN Machine solder Pressure + Foil Ignition

23 Final NanoBond Product 300 mm Target Ni Target Ni Target Ag-Sn Solder NanoFoil Brass Backing Plate Ag-Sn Solder Brass Backing Plate Heat from Foil Melts Solder Foil Cracks during Reaction 0.1mm Solder Flows into Gaps forming a Composite Interface Less than 2% voiding, no edge voids

24 Prediction and Control of NanoBond Validated computational model: accelerates selection of key design parameters (e.g. foil thickness and solder thickness) yields accurate predictions of thermal exposure of components during joining provides key input for evaluation of residual stresses after joining and cooldown Measured chip temperature Variance due to differences in solder thickness Predicted temperature for average solder thickness

25 Residual Stress Evaluation Reflow (In) - Max. Y Deflection: 0.68 mm NanoBond (AgSn) - Max. Y Deflection: mm Compare reflow soldering (Indium) with NanoBond (AgSn) Ansys FEM Software TG: 6 x6 x0.25 B 4 C BP: 6 x6 x0.31 Cu-Cr Von Mise s Stress Scale (MPa) Residual stresses and deflection an order of magnitude less than conventional bonding

26 Shear Strength Testing Steel Bar ½ x½ bonds Indenter Clamping System - Strength determined by choice of solders. - Typical strength 10% higher than comparable reflow joints due to finer grains Pb-Sn: MPa Ag-Sn: MPa - Values several times larger than yield strength of In

27 Outline Company Background Technology and Technology Background Sputter Target Bonding The NanoBond Process Performance Data Conclusions

28 Bond Line Control 18 Diameter Bondline Thickness (microns) Interface Thickness Before and After Joining Ni to Brass (W to Cu, Al to Al, etc.) Less than 2% voiding, no edge voids Interface Thickness ( µm) Position (mm) Before Joining (mm) After Joining (mm) Bond line thickness control or better

29 Rate Improvement with NanoBond Bond Type Max. Power without Failure (W) Power at Failure (W) Max. Power Density (W/cm 2 ) % Improvement (InSn baseline) Conventional (InSn) Conventional (In) Elastomer NanoBond (SnAg) mm round ITO TG, Cu BP, DC magnetron, indirect cooled

30 Performance Improvement with NanoBond Maximum Stable Power (W) InSn Conventional Reflow In Conventional Reflow SnAg NanoBond Melting Temperature of Solder ( C) Maximum stable sputtering power measured as a function of the melting temperature of the solder used for bonding (76mm diameter ITO targets bonded to Cu backing plates). MESSGAGE: NanoBond enables choice of high temperature solder, driving the benefits.

31 Performance Improvement with NanoBond Bond Type Max. Power without Failure (W) Power at Failure (W) Max. Power Density (W/cm 2 ) % Improvement (Elastomer baseline) Al2O3 / Cu Elastomer Al2O3 / Cu 400 Not run to NanoBond failure 8.8 (at least) > 33

32 Benefits: NanoBond for Sputter Target Bonding Benefits To End User Increased sputtering throughput Higher sputter rate via higher temp solder Demonstrated up to 130% increase Improved machine uptime and reliability Reduced arcing via higher melt temp solder 156C => 230C solder melt temp Reduced incidence of debonding via stronger solder 5.5 MPa => 25 MPa Improved film thickness and uniformity Vastly improved target flatness No post-bond cool down => Minimal deformation Improved gap control => less potential for film thickness variation Reduced potential for film contamination Higher melt temp solder => less potential for wicking in tiled targets

33 NanoBond Value Data Storage Throughput, yield, deflection Eliminate deflection with metals Reduce debond / arc for ceramics Drive higher sputter rate Increase machine uptime

34 NanoBond Value Flat Panel Display (LCD) Throughput, leadtime, deflection Eliminate deflection with metals Reduce debond / crack for ceramics Higher deposition rates Reduced leadtime

35 NanoBond Value Semiconductor Quality, throughput Consistent film quality Drive higher sputter rate Higher operating temperatures (high melting temperature solders; braze) Eliminate deflection Competes versus diffusion bonding

36 NanoBond Value Photovoltaic Quality, throughput Drive higher sputter rate (AZO under evaluation) Eliminate deflection with metals Reduce debond / crack for ceramics

37 Benefits: NanoBond for Sputter Target Bonding Benefits To Material Supplier / Bond Shop Ability to sell targets with increased value to end user Improved bonding process repeatability Variables are controlled prior to bonding at room temp Bond line Gap between tiles Alignment of target to backing plate Minimize the need for back side metallization Potential for increased throughput: Reduce cooling time for bonded target Eliminate the post-bond target straightening step Possible staging for just-in-time operation Prewet and stage backing plates or targets Potential for automation Potential cost savings: Reduce/eliminate use of Indium Reduce energy consumption (reduce hot plate usage)

38 Outline Company Background Technology and Technology Background Sputter Target Bonding The NanoBond Process Performance Data Conclusions

39 Use RNT bond shop: We can bond for you We can bond until you develop your NanoBond capability We provide applications support Current Capabilities Round targets Long linears: Single-piece and multi-tiled Up to 700mm wide Rectangulars up to Gen 4.5 Planned press modification extend length to 3500mm (to Gen 10) How to Access Nanobond

40 How to access NanoBond Use authorized/certified third party bond shops In Japan: Techno-Fine Ltd. Establish Nanobond in house Small license fee Consult to capitalize bond shop (low $) Technology transfer Training and Certification (3 levels) RNT Marketing End user Materials supplier Bond Shop Equipment suppliers (OEM) partnerships

41 Summary: NanoBond for Sputter Target Bonding Controllable, flexible process based on well-established scientific understanding, relying on robust, validated design models Tangible benefits to target user Increased throughput; improved machine uptime; higher film quality; flexibility; etc Tangible benefits to materials supplier / bond shop Higher value add; process repeatability; cost savings; increased throughput NanoBond service accessible through RNT (US) and RNT licensees (worldwide basis) NanoBond technology is also accessible through licensing and technology transfer

42 Acknowledgments RNT Contributors: A. Duckham, E. Besnoin, J. Newson, J. Subramanian, D. van Heerden, H. Parker, F. Zimone, T. Weihs Mr. Jun Ueno, Techno-Fine Ltd, for organizing RNT s participation in Vacuum 2008

43 THANK YOU!

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