Skills and excellence formation on basis of Laboratory of Plasma Physics & Atomic Spectroscopy Institute of Spectroscopy (ISAN) of Russian Academy of

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Toby Barker
5 years ago
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2 1968 Skills and excellence formation on basis of Laboratory of Plasma Physics & Atomic Spectroscopy Institute of Spectroscopy (ISAN) of Russian Academy of Science

3 2005 Development of Jet 1 Demo EUV Source within MoreMoore 2001 Works on initial DPP discharge units with Philips Extreme for alpha tools

4 2012 Development of Jet 3 Demo (scaled up-to 32 kw electrical power) Supported by: 2011 EUV Labs Establishment 2009 Development of Jet 2 Demo EUV Source

5 2013 Establishment of facility in Brainport, Eindhoven NL Acquiring relevant teams

6 EUV LABS TODAY R&D Cloud of teams and companies Contract and independent Self-developed JetDPP EUV Source

7 R&D PROJECTS EUV-source Jet Demo 3 (JetDPP) for HVM-lithography Brand new optical nanodiagnostics technologies MLM-optics life-time enhancement techniques Technology elements for BEUV lithography (6,7 nm lithography) Advanced numerical simulation models

one of the key elements of the lithography equipment for the

8 EUV-source Jet Demo 3 (JetDPP) for HVM-lithography High-power Self-developed technology Liquid jets of tin JetDPP Goes to become one of the key elements of the lithography equipment for the production of next-generation microelectronic devices with topology of <22 nm

9 EUV-source Jet Demo 3 (JetDPP) for HVM-lithography Current parameters: Input electrical power up to 32 kw CE in 2% band 2pi 2,5 % in band EUV power in 2 pi = 800 W Target for JetDPP (theoretical) Input electrical power up to 250 kw in band EUV power in 2 pi up to 6-7 kw in band in IF - 0,6 0,8 kw

10 Brand new optical nanodiagnostics technologies Problem: Development of techniques and devices for rapid far-field optical diagnostics of nanoparticles/structures using quantum dot emitters as optical and spectral nanoprobes Solution: EUV Labs introduces unique detection technology of nanoprobes with up to 5 nm precision, based on multi-frequency laser excitation and analysis of the spectra of fluorescence and Raman resonance of particles

11 Brand new optical nanodiagnostics technologies Aims: Creation of center of excellence in nanodiagnostics Cooperative development of the umbrella of novel techniques for rapid optical nanodiagnostics within different industrial and research applications, basing on disruptive technologies introduced by EUV Labs team

MLM-optics life-time (protection and cleaning technologies in lithography tool) Problem: The lifetime of the POB (Projection Optics Box) is a big challenge in EUVL industry.

12 MLM-optics life-time (protection and cleaning technologies in lithography tool) Problem: The lifetime of the POB (Projection Optics Box) is a big challenge in EUVL industry. Carbon contamination, hi-power EUV-radiation, ion bombardment - all leads to fast degradation of POB Solution: EUV Labs team suggested the idea of in-line plasma cleaning induced by EUV emission over the surface of the mirrors. Implementations of this method are already carried out in wide number of experiments, leading to the development of all the in-line plasma cleaning technology for EUV optics

MLM-optics life-time (protection and cleaning technologies in lithography tool) In collaboration with: Aims*: Enhancement of in-line protection & cleaning techniques for POB in 13,5 /

13 MLM-optics life-time (protection and cleaning technologies in lithography tool) In collaboration with: Aims*: Enhancement of in-line protection & cleaning techniques for POB in 13,5 / 6,7 nm lithography Development of equipment for diagnostics and plasma cleaning of POB * EUV Labs is the only team developing complex solutions for the problem of lifetime of MLM-optics

14 Technology elements for BEUV lithography (6,7 nm lithography) Problem: The expected radiation source will be at 6.7 nm where is a hope for high reflectivity multilayer mirrors. The light source at 6.7 nm can provide the manufacturing of the chips at the 12 or even 9 nm nodes that would be quite problematic using EUV lithography Aims & Solutions: Development of the principals of the effective light sources with wavelength shorter than EUV (6,7 nm radiation) Development of the metrology and diagnostic equipment for the 6,7nm plasma radiation Manufacturing of the 6,7 nm light sources for the research purposes

15 PRODUCTS & SOLUTIONS Liquid metal/tin centrifugal pump Ultra-bright laser driven light source with continuous spectrum Detectors Gated MCP for visualization of X-Ray and VUV radiation Variety of X-ray and VUV CCD-based detectors VUV and X-ray Spectroscopy Tools Compact versatile grazing incidence VUV spectrometers Diffraction grazing incidence VUV monochromator - spectrometer Extra compact x-ray focusing crystal spectrometer

16 PRODUCTS & SOLUTIONS Tin Pump White source Detectors Spectrometers

parameters: jets diameters 2 mm, velocity up to 20 m/s 450 C

17 Liquid metal/tin centrifugal pump Engineered for EUV DPP source based on liquid tin jets providing following parameters: jets diameters 2 mm, velocity up to 20 m/s 450 C 15 bar 80 Hz Max temperature о Max pressure Max turbine rate 2 m 3 /h Max delivery

18 Liquid metal/tin centrifugal pump Applications: in EUV sources (DPP, LPP) other liquid metal and extremely hot media pumping Velocity of tin jets versus rotational velocity of pump motor Design futures: Stainless steel body Magnetic coupling drive Ceramic bearings

Ultra-bright laser driven light source with continuous spectrum Utilizes the concept of laser plasma generation in pressurized xenon gas to achieve:

19 Ultra-bright laser driven light source with continuous spectrum Utilizes the concept of laser plasma generation in pressurized xenon gas to achieve: Brightness: 50mW/mm2/nm/sr (at 550nm) Spectral range: nm Plasma spot size: mm Stability: up to 0,1% with active feedback Lifetime: up to hours

20 Ultra-bright laser driven light source with continuous spectrum Spectral radiance vs. arc lamp in visible range Emission spectrum in UV range

21 Ultra-bright laser driven light source with continuous spectrum Applications: Advantages (on usual xenon lamps) Semiconductor testing and process control Microscopy 7x Brightness >20x Lifetime Liquid chromatography (HPLC) and capillary electrophoresis Small volume spectroscopy Higher spatial and time stability Smaller spot size more efficient coupling to fibers

22 Detectors LINE OF A METROLOGICAL EQUIPMENT Gated MCP with multi-frame units individual sector/strip gating gating times ns Variety of X-ray/VUV CCD detectors Branded with

23 Detectors LINE OF A METROLOGICAL EQUIPMENT Applications: Plasma Diagnostics EUV and BEUV Lithography Absolute spectral measurements X-ray Microscopy ( Water Window ) X-ray and EUV spectral measurements X-Ray Fluorescence Analysis with Temporal and Spatial Resolution EXAFS Spectroscopy

24 Spectrometers LINE OF A METROLOGICAL EQUIPMENT Compact versatile grazing incidence VUV spectrometers Diffraction grazing incidence VUV monochromator/spectrometer Extra compact X-ray focusing crystal spectrometer

25 Spectrometers LINE OF A METROLOGICAL EQUIPMENT Advantages: Mobility (inside installation) Compatibility (CCD, MCP, PIN, films) Unprecedented detection efficiency Wide spectral range Branded with

26 WE ARE OPEN FOR JOINT DEVELOPMENT & COOPERATION EUV Labs, Ltd.

High Power Gas Discharge and Laser Produced Plasma Sources for EUV Lithography

High Power Gas Discharge and Laser Produced Plasma Sources for EUV Lithography U. Stamm, I. Ahmad, I. Balogh, H. Birner, D. Bolshukhin, J. Brudermann, S. Enke, F. Flohrer, K. Gäbel, S. Götze, G. Hergenhan,