IBS/e Ion Beam Sputter Deposition and Etching System. IBS/e with KDC-10 Ion Beam Sputter Deposition and Etching System with Kaufman Ion Source

Transcription

1 IBS/e Ion Beam Sputter Deposition and Etching System IBS/e with KDC-10 Ion Beam Sputter Deposition and Etching System with Kaufman Ion Source The Model IBS/e is a high vacuum thin film deposition system designed to precisely deposit sub-nanometer grain, conductive coatings onto specimens prior to examination in the electron microscope. Thin, conductive films are deposited onto specimens to prevent charging effects and to enhance contrast. Thin films are deposited using two ion beam sources directed at a target material, eliminating radiation or heating effects common with other coating techniques. Extremely thin, continuous metal or carbon films are deposited without risking damage to delicate features present on the specimen. Virtually any solid target material can be used for ion beam deposition with precise control over the deposition thickness. An optional third ion source allows specialized ion beam polishing and etching techniques to be employed. The ability to deposit amorphous, continuous films and to ion polish and etch samples makes the IBS/e system an essential addition for any electron microscopy laboratory using advanced techniques. Link to Standard Configurations: Standard IBS/e Configurations The KDC-10 is a 1 cm Kaufman Ion Source from Kaufman and Robinson, Inc., the leaders in ion source technologies, that has been especially modified and integrated for the IBS/e. The KDC-10 is a low energy, high current ion source that can ion process up to a two inch diameter sample. When used in the etch port of the IBS/e, SEM and optical microscopy samples can be polished and/or etched to enhance contrast in images. It is particularly useful for significantly improving the quality of EBSD patterns for difficult to prepare samples. With the neutralizer, the beam can be completely neutralized to prevent charging of the sample. The option of a focusing or collimated optics module gives the user the choice between higher sputter rates or larger processing area. When the ion source is used in a deposition port of the IBS/e, both very low rate depositions, required for High Resolution SEM imaging of nonconducting samples, and high rate depositions can be achieved, allowing more versatility for the instrument in a research environment as a desktop deposition system. Link to KDC-10 Configurations: IBS/e with KDC-10 Configurations

2 IBS/e Standard Configurations and Descriptions Click to see larger image IBS/e-DD This configuration is the standard IBS/e with two high voltage ion guns in the two deposition ports. It is used for low rate deposition for high resolution SEM coatings. IBS/e-DE This configuration is the standard IBS/e with one high voltage ion gun in the depo port and one high voltage ion gun in the etch port. It is used for low rate deposition for high resolution SEM coatings and for ion etching, slope cutting, and ion polishing a sample in a small area. The deposition rate will be half of that for the two deposition configuration. IBS/e-DDE This configuration is the standard IBS/e with an added optional ion gun. There are two high voltage ion guns in each of the depo ports and one high voltage ion gun in the etch/polish port. It is used for low rate deposition for high resolution SEM coatings and for ion etching, slope cutting, and ion polishing a sample in a small area.

3 IBS/e Configurations and Descriptions with KDC-10 Click to see larger image IBS/e-KDC This configuration is the IBS/e with two high voltage ion guns in the two depo ports and the KDC-10 ion source in the etch/polish port. The system is integrated with the KRI power supply which is external to the IBS/e system. The system comes with the focusing optics unless otherwise specified. It is used for low rate deposition for high resolution SEM coatings and for ion etching, slope cutting, and ion polishing a sample in a large area with low energy ions or neutrals. IBS/e-KDCAUX This configuration is the IBS/e with one high voltage ion gun in one of the depo ports and the KDC-10 ion source in the etch/polish port. The system is integrated with the KRI power supply which is external to the IBS/e system. The system comes with the focusing optics unless otherwise specified. It is used for low rate deposition for high resolution SEM coatings and for ion etching, slope cutting, and ion polishing a sample in a large area with low energy ions or neutrals. An auxiliary gas line is supplied for reactive ion sputtering. IBS/e-KDCETCH This configuration is the IBS/e with the KDC-10 ion source in the etch/polish port. The high voltage guns and deposition capability are removed from this system. The ion source is used for ion polishing and ion etching of the sample. It is used for ion etching, slope cutting, and ion polishing a sample in a large area with low energy ions or neutrals. An optional auxiliary gas line is available for reactive ion etching applications. IBS/e-KDCDEPO This configuration is the IBS/e with the KDC-10 ion source in the upper depo port. The high voltage guns and power supply are removed from this system. The system is integrated with the KRI power supply which is external to the IBS/e system. This system is capable of depositing films at very low to very high rates. An auxiliary gas line is included for reactive sputter deposition capability. IBS/e-KDCDUAL This configuration is the IBS/e with one KDC-10 ion source in the upper depo port and another KDC-10 ion source in the etch/polish port. The high voltage guns and power supply are removed from this system. The system is integrated with the KRI power supply which is external to the IBS/e system. A switchbox is included in the system to switch power between the depo ion source and the etch ion source based on the IBS/e mode. An auxiliary gas line is added for reactive sputter deposition capability or reactive ion etching capability. The system is used for low to very high rate deposition metal or oxide coatings and for ion etching, slope cutting, and ion polishing a sample in a large area with low energy ions or neutrals.

4 Figure 1 IBS/e-DD Images

5 Figure 2 IBSe-DE

6 Figure 3 IBSe-DDE

7 Figure 4 IBSe-KDC

8 Figure 5 IBSe-KDCAUX

9 Figure 6 IBSe-KDCETCH

10 Figure 7 IBSe-KDCDEPO

11 Figure 8 IBSe-KDCDUAL