Willkommen Welcome Bienvenue Tunable ion flux density and its impact on AlN thin films deposited in a confocal DC Magnetron Sputtering System XXIV. Erfahrungsaustausch Oberflächentechnologie mit Plasma- und Ionenstrahlprozessen - Mühlleithen / Vogtland, 07. - 09. März 2017 1, Maria Fischer 1, Kerstin Thorwarth 1, Sven Gauter 2, Hans Josef Hug 1, Jörg Patscheider 1 1 Empa, Laboratory for Nanoscale Materials Science, Switzerland 2 Institut für Experimentelle und Angewandte Physik, University of Kiel, Kiel, Germany
Outline Motivation & Introduction Results Part A: Plasma Analytics Part B: Thin Film Properties Conclusion 07.03.2017 2
Motivation Plasma analytics Plasma control Control of thin film growth through plasma conditions Ref: A. Anders, Thin Solid Films, Volume 518, Issue 15, 31 May 2010, Pages 4087-4090 07.03.2017 3
Magnetic Configuration of Single Magnetron Side View Top View Type I Balanced Type II Ref: Window, B., & Savvides, N. (1986). Journal of Vacuum Science & Technology A, 4(2), 196. Ref: CAPST, Sungkyunkwan University, Suwon, South Korea 07.03.2017 4
Magnetic Configuration of Single Magnetron Side View Top View Type II Plasma extended towards substrate Interaction of growing film with plasma Ref: Window, B., & Savvides, N. (1986). Journal of Vacuum Science & Technology A, 4(2), 196. Ref: CAPST, Sungkyunkwan University, Suwon, South Korea 07.03.2017 5
Confocal Dual Magnetron Sputtering Substrate Magnetrons (unbalanced) Closed Field Open Field 07.03.2017 6
Confocal Dual Magnetron Sputtering Substrate Magnetrons (unbalanced) Closed Field Open Field 07.03.2017 7
Confocal Dual Magnetron Sputtering Substrate Magnetrons (unbalanced) Closed Field Open Field 07.03.2017 8
Plasma Analytics Setup In Situ Coil N 150 L 58 cm R 8.8 12.2 cm B max @ substrate 200 G 07.03.2017 9
Plasma Analytics Setup In Situ Coil N 150 L 58 cm R 8.8 12.2 cm B max @ substrate 200 G Plasma Analytics Substrate Holder Langmuir Probe Calorimetric Probe Confocal DCMS ϕ= ϕ Ar 15 sccm (p 5µbar) P 1,2 (Al) 200 W (10W/cm 2 ) d target<->substrate 12 cm Thermocouple 07.03.2017 10
Plasma Analytics I Substrate Holder B z = 0 G B z = 45 G Open Field Closed Field Enhancement of ion flux for both configurations Ion flux is the sum of ion flux from individual guns 07.03.2017 11
Plasma Analytics II - Langmuir Probe Closed Field Open Field 0 5cm 0 5cm S N S N S N S N S N S N S N S S N S S N S S N S 12
Plasma Analytics II - Langmuir Probe Closed Field Open Field 0 5cm 0 5cm Local increase of ion flux density by more than one order of magnitude 13
Plasma Analytics III Calorimetric Probe Closed Field Open Field -5cm 0 5cm -5cm 0 5cm S N S N S N S N S N S N S N S S N S S N S S N S 14
Plasma Analytics III Calorimetric Probe Closed Field Open Field -5cm 0 5cm -5cm 0 5cm Local increase in energy flux density by more than one order of magnitude. Almost identical spatial profiles to ion current density 15
Plasma Analytics IV Temperature back back back Open Field, I coil = -24A I coil [A] Temperature [ C] (open field; P 1,2 (Al) = 200W) T outer T middle T inner T back 0 116 108 100 79-24 259 171 145 115 07.03.2017 16
Motivation Why Aluminum Nitride? Hard (around 20 GPa) http://www.crystal-n.com Wide bandgap semiconductor (6.2 ev) Optically Transparent (400-800 nm) Piezoelectric (5.15 pm/v for d 33 ) 07.03.2017 17
AlN Thin Film Properties Setup Reactive Confocal DC Magnetron Sputtering Ar:N 2 15:12 Pressure 5 μbar Power 200 W (10W/cm 2 ) Ion to Neutral Ratio Ion Current Density Varied Parameters 1 44 1.5 70 A/m 2 Temperature 100 500 C 07.03.2017 18
AlN Thin Film Properties 07.03.2017 19
AlN Thin Film Properties [1] Zhi-Ye Qiu et al. (2014), DOI: 10.1093/rb/rbu007 Stochiometric films Metal non-metal ratio not affected by ion bombardment Oxygen incorporation reduced for higher plasma densities Explanation: Higher reactivity of N 2 in plasma environment No Ar implantation through increased ion bombardment (<0.07 at%,rbs+erda) Low energy ion bombardment! 07.03.2017 20
AlN Thin Film Properties with coil without coil (almost) all samples show prefered (002)-orientation 07.03.2017 21
AlN Thin Film Properties Tensile Compressive 07.03.2017 22
AlN Thin Film Properties 500 T [ C] 260 170 140 500 nm columnar, porous dense 100 1.5 2.4 6.4 30 j ion [A/m 2 ]
Conclusions Variation of ion flux density with additional magnetic field in confocal DCMS. j ion tunable over more than one order of magnitude Considerable influence on temperature Comparison of influence of Ion Bombardment and Temperature on AlN thin film growth (002) orientation: 100 C < T < 500 C 1 < j ion /j neutral < 30 Stress: tensile compressive with increasing j ion Microstructure: columnar, porous dense with increasing j ion 07.03.2017 24
Outro 07.03.2017 25