Chapter 3 Fabrication Process for Surface Micro machined Metallic Structures

Chapter 3 Fabrication Process for Surface Micro machined Metallic Structures This chapter covers major unit processes used for the fabrication of MEMS devices. The main focus is on the fabrication of reliable RF MEMS devices using surface micromachining. The unit processes that are of prime concern are polysilicon deposition, diffusion, metal deposition and etching, photoresist coating and patterning, lift-off, electroplating and release of photoresist/metal sacrificial layers. The major challenges toward reliable switch fabrication/commercialization are structural deformation/ out of plane buckling after sacrificial layer release. Reasons for device buckling are built-in residual stress which is developed in the structure during metal deposition and difference in thermal expansion coefficient of stacked layers. The issue of out-of plane deformation/buckling is addressed in this chapter using optimised process of metal deposition by electroplating and sacrificial layer release techniques. 3.1 Fabrication processes for RF MEMS devices To understand the effect of fabrication process parameters on the structural reliability, various fabrication iterations on RF MEMS switches (capacitive and ohmic), Test structures, Beam array, Torsional Mirrors, SP4T(single pole four throw) and Inductors are carried out. All the fabrication processes are implemented on 2 silicon wafer. The fabrication process included the following steps: a. Oxidation thermal oxidation (field oxide) for initial one-micron thick layer. b. LPCVD and PECVD polysilicon electrode deposition, actuation electrode insulation and dielectric layer for capacitive switches. c. Diffusion - for low resistivity polysilicon dc bias lines, actuation pads and resistor for ohmic contact switches. d. Sputter deposition (dc and rf sputtering) and E-beam Au, Cr and Ti for seed layers and adhesion promoter for gold, Ti, TiN, Al-Si for underpass area (metal stack) and Ni for contact pads. e. Lithography nine lithography steps involving the use of three type of photoresist ranging in thickness from 1 10 microns. f. Reactive ion etching for SiO 2 and polysilicon etching. g. Electroplating - for structural layer deposition, using lift off and etching techniques. 27

h. Plasma Ashing for thick hard baked photo resist sacrificial layer removal. i. Critical point drying for low temperature removal of sacrificial layer. Among the above mentioned processes, the main processes those need optimisations are: 1. Polysilicon deposition and doping. 2. Metal (Cr, Au, Ti, TiN, Al) deposition, etching and lift off. 3. Photolithography optimisation for three different photoresist. 4. Electroplating process optimisation. 5. Sacrificial layer removal using plasma ashing and CPD. Figure 3.1 shows the 9 level mask layout of the devices to be fabricated [1]. The fabrication process is based on the IC fabrication techniques using surface micromachining and gold electroplating. The general process compatibility issues, material selection, thermal annealing during different processes, etc. decides the overall performance of the fabricated device. Figure 3.2 shows the schematic of the fabrication steps for RF MEMS Ohmic switch and details are explained in this section. SP4T Switch CPW STS Ohmic Switch Inductor Bridge Test Structure Self Actuated Capactive Switch Meander Ohmic Switch Bridge Test Structure SP4T CPW SP4T AM(L) S P D T Test Structures Meander Ohmic Switch STS Capactive Switch Bridge Test Structure STS Ohmic Switch CPW AM(R) Torsion mirror Bridge Test Structure Test Structures Bridge Test Structure Torsionl mirror Meander Ohmic Switch COMPLETE LAYOUT Figure 3.1: Complete layout with marking of position on specific devices. 28

A low-loss, 2", p-type, <100>, 5 KΩ silicon wafer is used as substrate for device fabrication. The wafer is cleaned using four different cleaning steps in succession. Degreasing: Removes organic and oily contaminants from the surface. RCA 1, RCA2: Removes organic and metallic contaminants from the wafer surface. Piranha Cleaning: Removes heavy metal particles from the wafer surface. HF Dip: HF dip removes native oxide from the wafer surface formed during piranha cleaning. An insulation layer of 1000 nm of silicon dioxide is grown over silicon surface using thermal oxidation. The thickness obtained in the case of dry oxidation is limited to few nm only; a combination of dry-wet-dry oxidation is used to obtain larger oxide thickness. The oxidation parameters for 1 µm silicon oxide are as follows: Furnace temperature in 3 zones: 846ºC, 1050ºC, 821ºC. N 2 flow rate for purging: 85cc/min for 3 hours, saturate furnace temperature. O 2 flow rate for dry oxidation: 35cc/min for 15 minutes O 2 flow rate for wet oxidation: 20cc/min for 155 minutes O 2 flow rate for dry oxidation: 35cc/min for 15 minutes 3.1.1 Polysilicon deposition and doping The actuation pads, resistor for ohmic contact switches and the DC bias lines for the switching structures are patterned in polysilicon. A polysilicon layer of 0.6 µm thickness is obtained using LPCVD techniques and the process parameters are shown in table 3.1. Since undoped polysilicon has low electrical conductivity, it can t be used as metal lines for DC biasing. The conductivity of polysilicon layer is enhanced by phosphorus diffusion at high temperatures followed by annealing. The same polysilicon layer is also used to make biasing resistors for ohmic contact switches which requires a precise value of sheet resistance (240Ω/ ). Table 3.2 gives the summary of experiments conducted to obtain desired sheet resistance value for the polysilicon. Diffusion process is optimized by multiple iterations until a repeated value for sheet resistance is obtained. Table 3.3 shows the results of optimized phosphorus doping recipe used for fabrication process. Phosphorous doping is carried out for 7.5 minutes at 950 C and 15 minutes at 900 C, to obtain a sheet resistivity of nearly 240Ω/. 29

Figure 3.2: Fabrication process flow for RF MEMS Ohmic switch. Table 3.1: Polysilicon Deposition Process S.No. Polysilicon Process Steps 1 Temp. 625 0 C 630 0 C 620 0 C. 1 st Zone 2 nd Zone 3 rd Zone 2 Gas Flow: Silane (SiH 4 ) 3 Flow Rate: 50 cc/min (38.4%) 4 Process Time: 29 minutes 5 Pressure: 0.240 Torr 6 Thickness: 6000Å 30

Table 3.2: Polysilicon sheet resistance optimization Step W#S1 W#S2 W#S3 W#S4 W#S5 Time 25 min 15 min 7.5 min 7 min 5 min Temperature 950 0 C 950 0 C 950 0 C 950 0 C 950 0 C Anneal Temp. 1000 0 C 1000 0 C 1000 0 C 1000 0 C 1000 0 C Anneal Time (min) 20+10 (O 2 +N 2 ) 20+15 (O 2 +N 2 ) 10 (N 2 ) 10 (N 2 ) 10 (N 2 ) SHEET RESISTANCE MEASUREMENT Before Annealing (i) 28.8Ω/ (ii) 28.9 Ω/ 45.3 Ω/ 44.8 Ω/ 164Ω/ 165Ω/ 191.3Ω/ 200.0 Ω/ 301 Ω/ 350 Ω/ After Annealing (i) 38.2 Ω/ (ii) 37.2 Ω/ (iii) 38.0 Ω/ 76 Ω/ 78 Ω/ 76 Ω/ 237 Ω/ 248 Ω/ 258 Ω/ 260 Ω/ 266 Ω/ 274 Ω/ 400 Ω/ 420 Ω/ 489 Ω/ Table 3.3: Polysilicon optimized doping recipes Step W#A1 W#S3 Time (min) 15 (with POCl 3 ) + 10(without POCl 3 ) 7.5(with POCl 3 ) Temperature 900 0 C 950 0 C Annealing Temp 1000 0 C 1000 0 C Annealing Time (min) 5 (O 2 )+ 10 (wet) + 5 (O2) + 5 (N 2 ) 5 (N 2 ) Sheet resistance measurement Before Annealing 135± 10 Ω/ 160± 5 Ω/ After Annealing 220 ± 10 Ω/ 240 ± 10 Ω/ First level lithography is used to define polysilicon actuation electrodes and interconnect lines for the RF MEMS switch. The reactive ion etching (RIE) of polysilicon is followed by the photoresist removal in acetone, piranha cleaning and dip in dilute HF. Figure 3.3 shows the first level mask layout, optical images of patterned actuation electrodes and process cross section view. An over etching polysilicon is observed after the optical inspection of defined patterns. Over etching of polysilicon can result in change in geometry, leading to deviation of final switch performance from the designed results. For example, over etching of actuation electrodes would result in small actuation area and hence increase in actuation voltage. The next step is the deposition of 350 nm of silicon dioxide layer using PECVD process. For 350 nm of SiO2 deposition, silane SiH 4 (5.4cc), Nitric oxide N 2 O (100%) and Nitrogen (31%) are reacted in a plasma chamber at 300ºC for 14 minutes. This isolation layer prevents the electrical short between the movable bridge and the actuation electrodes. Second level lithography defines the contact holes in the SiO2 layer. The contact holes are used for interconnection between polysilicon lines and metal lines. These metal lines are connected to metal pads for biasing voltage. Reactive ion etching (RIE) technique is used 31

to open the contact holes in SiO2 layer followed by photoresist removal. Figure 3.4 shows mask layout, optical micrographs of the contact holes openings in the oxide layer and cross section view after second level of lithography. Polysilicon SiO2 Si (a) (b) (c) (d) Figure 3.3: (a) Mask layout (b) Optical micrographs of patterned photo resist on polysilicon electrodes and polysilicon connection pads. (c) Optical micrographs of patterned electrodes after RIE and (d) cross section view of pattern layer. 3.2 Multilayer metal (underpass area) deposition, etching and Lift off The part of the transmission line under the bridge is fabricated using a multi-layered stack of Ti/TiN/Al/Ti/TiN. The stacked multilayer provides good adhesion, smooth contact surface and low resistivity path for signal transmission. The important steps are: Pre deposition metal clean dip in 5% HF solution for 2-3 seconds. Sputter deposition of Ti / TiN / Al / Ti / TiN, for deposition time 6 min / 10 min / 14 min / 12 min / 16 min respectively, resulting in thickness for Ti 34 nm, TiN 80 nm, Al 400 nm. Patterning of multilayer metal (lithography 3): Positive photoresist (S1813) is coated at a speed of 4500rpm, RAMP 8000, for 30 seconds and prebaked for 25 minutes at 90⁰C. The PR is exposed for 5 seconds (intensity 8-9 mw/cm 2 ) 32

followed by developing time of 60 seconds. The post bake step is at 120⁰C for 30 minutes. (a) (b) (c) Figure 3.4: (a) Mask layout of polysilicon electrodes covered with PECVD silicon dioxide. (b) Optical micrographs zoomed view of contact holes, opened in SiO2 layer. (c) Cross section view of pattern layer. 3.2.1 Etching of metallic layer The multilayer metal etching is one of the most important steps in fabrication and is performed in following steps: TiN Etching (Type TiN 22-7): TiN etchant is used at temperature 20⁰C, for 25 seconds. The etchant composition is HF + Nitric Acid a proprietary composition of the vendor (Transene). Although the etchant should etch TiN only, it is observed that TiN and Ti both layers are etched out for the time and temperature combination shown above. The problem is solved by adopting the lift off techniques mentioned in next section. Although this increases the process complexity, but the reliability is better. Ti Etching (Type TFTN): In order to remove any traces of Ti left from the previous step Transene Ti etchant is used at recommended temperature of 70⁰C, 33

for 40 seconds. Au Etching (Type TFA): Etch rate of Au etchant is 28Å/sec at 25 0 C. The temperature of Au etchant is kept at 25ºC and etching time is approximately 70-75 seconds, 8-10 seconds of ultrasonic vibrations in small steps (2 seconds each) is required to remove Au seed layer from perforations.wafer is rinsed in DI water after etching. Cr Etching (Type TFD): Etch rate of Cr is 25 Å/sec at 40 o C, the solution consist of sulfuric acid and nitric acid. Cr etchant is kept at 40ºC and etching time is approximately 20 seconds with one second of ultrasonic vibrations after each five 5 seconds. Over-etching is desirable to ensure removal of Cr seed layer from perforations. After Cr seed layer etching using Transene etchant (TFD), wafer surface retains contaminants. To avoid this contamination, wafers is dipped in 2% H2SO4 solution for 2-3 seconds immediately after Cr etching followed by 5 min rinsing in DI water. Al Etching (Type F): Etch rate of Al etchant is 100Å/sec @ 50 o C. The etchant constituted of phosphoric acid and acetic acid.wafer is rinsed in DI water after etching. 3.2.2. Lift off process The lift off process is used as an alternate to metal etching and pattern metal at desired area [2]. In this case lithography of desired pattern is followed by metallisation as shown in schematic of lift off process (figure 3.5). The following steps are considered during lift off: Thickness of photoresist must be more than 2-3 times of metal thickness. Metal deposition should be carried out using E-Beam. Sputtering can be used for metal deposition with low power (400W) and minimum distance between electrodes. Sample should place in acetone for 30 minutes. Sometimes manual cleaning of the substrate with clean room wipes helps to remove photoresist residue after acetone dip. 34

PR profile for Lift-off Metal deposition from E-beam or sputtering Metal pattern after lift off Figure 3.5: Fabrication process step for lift off. The total thickness of the multilayer stack is matched with the thickness of actuation electrodes (600nm). The height difference between the underpass and the actuation electrodes would lead to a complex and non-uniform bending during actuation. During the second run of fabrication only aluminium metal of thickness 600nm is used as underpass layer, due to unavailability of multi-layer metal stack. The Al is deposit at two different RF power 400 and 600W, at base pressure 5x 10-3 torr for 20 minutes. The high RF power (600W) and distance between electrode results in photoresist (PR) burning on the lift off sample as shown in SEM micrographs (figure 3.6). This PR burning is avoided by using low RF power of 400W and E-beam for metal deposition. The third lithography step defines the underpass area of the transmission line in aluminium and the contact pads on the polysilicon connection lines, mask layout and respective optical micrograph after Al pattern is shown in figure 3.7. The deposition and patterning of underpass area is followed by the 100nm of PECVD SiO2 deposition, which acts as a dielectric layer for the capacitive type switch. The down state capacitance of the capacitive switch depends on thickness, surface roughness and dielectric properties of this layer. The fourth lithography defines via holes through which underpass area gets connected to the input and output transmission ports in thick gold. Figure 3.8 shows mask layout and optical micrograph of fabricated structures with via holes opening in oxide layer over central overlap area and zoomed view of polysilicon line, connection pads and underpass bump area. 35

Al+PR Al+PR Al Al Figure 3.6: Photoresist burning after Al metallisation. (a) (b) Al (600nm) Figure 3.7: (a) Mask layout of polysilicon electrodes covered with PECVD silicon dioxide, metal on underpass and contact pad. (b) Optical micrographs of fabricated underpass metal contact area, poly resistor with contact pad and ground line. In the next step an additional Cr (30 nm)/au (150 nm) metal layer is sputter deposited using lift off process over the underpass area oxide layer to form a floating capacitor. The photoresist mould is defined as a result of fifth level of lithography for the lift off process. This fabrication step is only useful or dedicated to capacitive switches. This floating layer helps in improving the down state capacitance of the switch and hence the capacitance ratio. During the switch actuation, the movable beam comes in contact with this floating metal layer and connects the floating capacitor to ground, thus achieving the maximum down state capacitance. 36

(a) (b) (c) Figure 3.8: (a) Mask layout, (b) optical micrograph of fabricated structures with via holes opening in oxide layer over the central overlap area and (c) zoomed view of via holes with polysilicon line, connection pads and underpass bump area. 3.3 Photoresist Optimization The thickness variations for defining the complete bridge ranges from 1 to10 microns and requires three different kinds of photo resists. The normal pattern definition such as polysilicon, contact holes (SiO 2 ), metal and via holes is achieved by using high resolution resist (S1813) where thickness ranges from 0.5-1.5 microns. The spacer layer HIPR 6517 (high resolution positive photoresist) is optimized to achieve the thickness ranges from 2-4 microns. The spacer layer PR also needs to be stabilized by baking at high temperatures and large number optimization experiments are conducted to characterize the profile of baked layer. The formation of bridge using electroplating requires photo resist thickness in the range of 3-5 microns and capable of withstanding the subsequent electroplating environment for longer durations. For this purpose appropriate resist (AZ 9260, AZ P4620) and developer (AZ 400K) is used. Figure 3.9 shows the various resist details with typical profile requirement specific to applications [2]. Table 3.4 shows the methods and process required for photoresist to achieve the desire profile. 37

Si-Substrate Si-Substrate Si-Substrate (a) S 1813,1818 (1-2 m) (b) HiPR 6517 (2-4 m) (c) AZ 4620,9260 (4-10 m) Figure 3.9: Positive photoresist typical profiles. Table 3.4: Methods for positive photoresist to achieve desire profile Required Process, Applications Photoresist Thickness Methods/ Process Normal, general S 1813,1818 1-2 m Moderate dose Moderate develop time Spacer, anchor posts HiPR 6517 2-4 m Low dose Developer dominant Lift-off, e-plating AZ 4620,9260 4-10 m High dose low dependence on developer 3.3.1 Photolithogrphy surface preparation Photoresist adhesion to typical wafer surface such as SiO 2 and metals is critical to faithfully replicating the photoresist pattern in etching process. There are several factors which can interfere with photoresist adhesion [3]: If the base solvent has a higher degree of interaction with the wafer surface than the photoresist base resin, the solvent can push the resin away from wafer surface. Later during soft bake the solvent may evaporate, but the resin may be constrained by the photoresist film from the resulting gaps. This issue is addressed by good photoresist formulations [4]. The resin-resin interaction can be stronger than the resin-substrate interface interaction, particularly if the base solvent is badly matched to the resin. The resin will then form tight coils to minimize its energy, lowering its interaction with the substrate. The intrinsic interaction of the resin with the wafer surface is however the most important factor in adhesion and once again this addressed during PR formulation [4]. Surface contamination particularly due to moisture. Water has a very high affinity for SiO 2. Moisture interaction with SiO 2 is a particular problem because SiO 2 readily becomes hydrated due to humidity. Surface moisture may take the form of 38

adsorbed surface moisture or chemically bonded OH-Silanol group. Surface moisture is reduced by bake at less than 100 C, but silanol groups require a much higher temperature bake immediately before photoresist coating. In order to minimize moisture effects on the PR adhesion, a variety of surface pretreatment techniques are used. A liquid "adhesion promoter", such as "hexamethyldisilazane" (HMDS), is applied to promote adhesion of the photoresist to the wafer. The phrase "adhesion promoter" is a misnomer, as the surface layer of silicon dioxide on the wafer reacts with the agent to form Methylated Silicon-hydroxide, a highly water repellent layer. This water repellent layer prevents the aqueous developer from penetrating between the photoresist layer and the wafer's surface, thus preventing lifting of small photoresist structures in the (developing) pattern. Photoresist Coating During spin coating, the centrifugal force of the substrate spinning with several 1000 rounds per minute (rpm) distributes few ml of resist over the substrate. The resist film thickness attained by spin coating represents the equilibration between centrifugal force and solvent evaporation, both increasing with spin speed. Figure 3.10 shows the photoresist spin coat cycle and Headway PMW 32 coating unit used during PR processing. Influences on the resist film thickness The resist film thickness given for a certain spin speed holds for sufficiently long spin times, when the resist spin-off is completed. As shown in the figure 3.11, the spin times required to attain the final film thickness increases with the resist viscosity. Low spin speeds also increase the time for a constant resist film thickness. This time dependency not only allows the film thickness to be adjusted for spin speed, but also the spin time. However, this is only a reasonable procedure for attaining thin and thick films. For thin films (approx. < 10 μm), the spin times is long for more reproducible results. The photoresist spin speed curve is an essential tool for setting the spin speed to obtain the desired resist thickness (figure 3.11). The final resist thickness varies as one over the square root of the spin speed and is roughly proportional to the liquid photoresist viscosity [2, 4]. 39

Spin speed Spin Time Ramp Spread time Resist Dispensed Time Figure 3.10: (a) Simple photoresist spin coat cycle and (b) Spin coater unit. Figure 3.11: Effect of spin speed on PR film thickness [4] Hot Plate vs. Oven baking Hotplates have several advantages over convection type ovens [5]: Decreased bake time Increased reproducibility Better film quality. In conventional ovens formation of different temperature zones, is a problem and can severely affect film quality and reproducibility. In an oven the heating rate of a substrate depends not only on the heated air flow past a substrate but also on its proximity to other cold substrates. Thus the heating rate for each substrate in a cassette of substrates is less than if each substrate is baked alone. Substrates near the ends of a cassette heat faster than the substrates in the middle, thus producing a non-uniform heating. Particle generation also occurs within a standard oven. In a forced-air, convection oven, substrates are 40

commonly exposed to a flow of particle laden air for at least 30 minutes. The PR film is very susceptible to these particles. Disadvantage of conventional ovens over hot plate In normal oven baking results from baking substrates from the "outside in". Since heat is applied to the outer surface of the film first, a skin forms on the surface of the film thus trapping solvents. Upon vaporizing, these solvents form blisters or bubbles which results in adhesion loss or even bulk film failure. This problem prevails in processes involving thick film resins. No skin effect occurs on a hotplate since hotplate baking heats the substrate from the bottom up. This "inside out" approach offers advantages for thick films since solvents in the film nearest the substrate are baked off before the film surface seals over. A well designed hotplate insures uniform baking across the substrate. Since the substrate intimately contacts a surface of a known constant temperature. Bake times is measured in seconds, rather than minutes or hours, as in conventional ovens (figure 3.12). Reduced vulnerability to particulate contamination is a major advantage of hotplate baking. Only condition is ambient clean room air passes over the substrate. In general positive photo resist baked for 30 minutes at 90 C in conventional ovens while 30 seconds at 115 C on hot plate. Edge Bead: Especially in the case of coating thick resist films (HiPR 6517, AZ9260 and AZ P4620), edge bead is formed which may cause sticking to the mask as well as an undesired proximity gap during exposure (with a reduced lateral resolution as a consequence). In case no automatic edge bead removal is possible, initial stages solution to avoid/lower the edge bead are: An elevated spin-speed for a shorter time. A spin-off of the edge bead by abruptly increasing the spin speed at a certain stage of spin coating. A multiple coating with an elevated spin speed for each coating cycle. For thick or solvent rich resist films, a delay between coating and soft bake prevents the edge bead growing during soft bake due to the thermally reduced viscosity. The delay time depends on the resist film thickness and is shortened by applying moderate temperatures. 41

Temp. ( 0 C) Edged substrates: manual cleaning of the substrate from the edge bead with clean room wipes. Exposure and development of the edge bead is also possible using a ring mask. 150 32 Hot plate IR Conventional Oven 100 32 50 32 25 32 1 2 2 3 2 Pre bake time (minutes) 4 3 30 32 Figure 3.12: Typical profile of various baking methods [5]. 3.3.1.1 Recipe for resist S1813 Resist S1813 allows thicknesses from 1.2 to 2.0 µm. The spin speed is adjusted for each recipe so that the desired thickness is obtained. The positive photoresist S1813 is used in wide variety of process flow to perform wet etch, dry etch and even lift-off processes. In present process S1813 is used for polysilicon electrode patterning, contact and via hole opening, metal etching and lift off. The process parameters for S 1813 are shown in table 3.5. The effect of exposure time (3,6 and 9 seconds) is observed using Focus Ion Beam (FIB) SEM cross section micrographs shown in figure 3.13 (a-c), the wall angles become smaller as exposed areas grow with increased dose. Table 3.5: Process parameter for S 1813 Coat Soft bake Expose Develop Wall angle Line width 4500 rpm for 30 sec 90 C for 25 min. conventional oven 6-7 sec 1 min. 75 2.5μm 42

(a) (b) (c) Figure 3.13: S 1813 (a) exposure 3 sec. (b) exposure 6 sec. (c) exposure 9 sec. 3.3.2 Spacer layer photoresist optimisation Sacrificial layer (spacer payer) for fabrication of suspended membrane is deposited and patterned using positive photoresist. The use of material as a sacrificial layer depends on the application, e.g. the temperature range in the following processing steps, the chemical treatments followed after this step and surface profile after lithography. A variety of metals, dielectrics and photoresists have been reported as sacrificial layers [6-9]. However, in the present case HiPR 6517 positive photoresist is used as it provides desired contour by controlling using pre bake and post bake temperatures. After high temperature baking at 180-200ºC PR turns into hard plastic layer and withstand in harsh environment. The photoresist HiPR in general is used to obtain a thickness of 2.2 μm without prebaking and without problem of edge beads. However, a thickness of 3.6 μm after post baking is required for MEMS switches to achieve a gap height of 3 μm from the transmission line. Thus, the photoresist coating process is optimized and includes the following steps (figure 3.14): Step 1: Acceleration, filling and thickness decision, Step 2: Edge bead removal, Step 3: Deceleration. Figure 3.14 shows the timeline graph for the photoresist coating to achieve the desired thickness. Optimised recipe for the HiPR 6517 is shown in table 3.6, using the same recipe optical micrograph of the fabricated structure with profile measurement is shown in figure 3.15 (a, b). Surface profiler measurement of spacer layer before and after the baking of photoresist is shown in figure 3.16. The overall thickness of 0.5 micron reduced after baking at 180 0 C as depicts from figure 3.16. Cross section views of structure are helpful to find the resist angel, next paragraph gives the details and requirement of resist angel tuning. 43

Speed (RPM) Step 1 Time (sec) Step 2 Step 3 Figure 3.14: Spin coating programme for HiPR 6517HC photoresist Table 3.6: Optimised Recipe for HiPR 6517 Coating Step Step 1 Step2 Step3 Exp. time (Sec) Speed (RPM) Ramp (RPM/Sec) Time(sec) 800 4000 25 2600 4000 1 0 500 0 Dev. Thickness (µm) time Before After (Sec) Bake Bake 20 60 4.1 3.5 Direction of profile scan (a) (b) Spacer layer thickness 3.5-3.6µm Figure 3.15: (a) Optical micrographs after spacer layer and (b) surface profiler measurement (Dectek 6M). (a) (b) Figure 3.16: Surface profiler measurement of spacer layer thickness (a) after deposition 4.1 µm and (b) after baking 180 0 C for ½ hour 3.5 µm. 44

(a) (b) (c) Bridge Anchor <45 0 Spacer layer profile Figure 3.17: Cross section profile of HiPR 6517 using Focused Ion Beam (FIB) SEM (CeNSE IISc Bangalore). (a) After15seconds of exposure (b) After 30seconds of exposure Figure 3.18: Spacer layer profile control with exposure time. Resist angle tuning The mechanical reliability of MEMS switch depends on the quality of anchor posts, as major failure in MEMS switches occurred at anchor points during switching. For reliable operation the anchor thickness is comparable to the bridge thickness [6-9]. The resist angle is fewer than 45 0 at the (steepest) position of the anchor. If we have a steeper angle, more than 45 0, the metal thickness of the anchor is significantly thinner than the rest of the bridge. Figure 3.17(a-c) shows cross section view of spacer layer near the anchor post is measured using Focused Ion Beam (FIB) SEM. The resist slope angel of HiPR 6517 is less than 45 0, the angel is tuned with exposure, developing and baking time [6]. The figure 3.18 shows the structures (alignment mark, spacer layer pattern) (a) after 15 seconds and (b) 30 seconds of exposure time. The variation of the resist angle with time and temperature is seen from the SEM cross section images shown in figure 3.19 (a, b). 45

For comparison the SEM images for HIPR 6517 have been scaled to the same magnification and compared. It can be easily seen that the resist angles decreased with both baking temperature and baking time. The spacer layer profile is optimised and following section covered the thick resist recipes optimisation used for electroplating. (a) (b) Figure 3.19: The SEM images for HIPR 6517 resist (a) Baking time 25min. at120 o C (b) Baking time 25min. at185 0 C. 3.3.3 Thick resist optimisation For the suspended bridge fabrication a photoresist mould is formed using AZ P4620 positive photoresist. For this step, the required resist thickness is 5 5.5µm. The AZ P4620 photoresist can be used for coatings up to 20 µm in a single step [3]. For 5 µm of thickness, the resist is coated at very high RPM (6000 RPM, 20000 RPM/sec) arising problem of uniform filling of photoresist on wafer. Generally, there are two ways to attain resist film thicknesses of 10 μm via spin coating: either by reducing the spin speed, or by reducing the spin time. Low spin speeds, however, cause a pronounced edge bead and sometimes even prevent the resist from tearing off the substrate with a non-reproducible resist film thickness as a consequence. Thus, spin coater is programmed to coat the wafer in two steps. In first step photoresist is spread on the wafer uniformly and second step decides the thickness of the photoresist. Multi step spin coating programme as shown in figure 3.20 is used for edge bead removal. Prebaking is also a crucial step in AZ P4620 lithography as oven baking causes cracks in photoresist film. The cracking of photoresist during prebake in oven occurs due to early drying of photoresist surface layer. As thickness is high, the solvent in bulk photoresist is trapped due to surface layer drying. The release of this solvent from surface causes cracks in photoresist. Therefore, prebaking in oven is done by providing temperature ramp. The cracking problem is solved by prebaking the photoresist on hot plate as discussed above in section 3.3.1. On hot plate, 46

Speed (RPM) Speed (RPM) heating or drying of photoresist starts from the bottom surface and edges of the photoresist, thus avoiding cracks. Also, AZ P4620 is highly sensitive to atmospheric conditions, such as: humidity, temperature and time between consecutive steps during lithography, e.g. a delay between prebaking and exposure can change the exposure dose and developing time. In that case AZ 9260 is good choice for process repeatability, this resist is pretty stable than AZ P4620. The process steps for AZ P4620 photoresist for 5-5.5 µm are: HMDS coating at a spin speed of 4500 RPM, 8000RPM/sec RAMP for 30 seconds and oven baking at 90ºC for 5 minutes. Photoresist is coated using two step recipes shown in table 3.7. After coating, prebaking of photoresist for 35 seconds at 60ºC on hot plate is followed by lithography exposure time of 5 seconds and a developing time of 80 seconds. In some cases, delay between prebaking and exposure changes the exposure dose and developing time. This result in some PR traces, these PR traces is resolved by using O 2 plasma ashing. Table 3.7: Recipe of AZ P4620 photoresist for 5µm Coating Step Step 1 Step 2 Spin Speed (RPM) 400 6000 RAMP (RPM/min) 20000 20000 Time (sec) 5 15 t 1 t 2 t 3 t 4 t 5 Time (sec) Step 1 Step 2 Step 3 Figure 3.20: Multi-step spin coating program for minimizing the edge bead. 47

Table 3.8: Recipe of AZ P4620 photoresist for 10 µm Coating Step Step 1 Step 2 Spin Speed (RPM) 500 2500 RAMP (RPM/min) 300 300 Time (sec) 20 10 The optimized recipe for AZ P4620 photoresist for 10-11 µm is: Photoresist is coated using recipe shown in table 3.8. After coating, prebaking of photoresist for 55 seconds at 60ºC on hot plate is followed by lithography exposure time 16.5 seconds and a developing time of 130 seconds on SiO 2 substrate. Exposure time reduce to 14 seconds on gold substrate. As mentioned above AZ P4260 is highly sensitive resist. Thus, new resist AZ 9260 is procured and recipes are optimised for thickness ranges from 5-10 micron. The AZ 9260 is a thick photoresist with high viscosity and transparency. It is optimized to fabricate mould for electroplating bridge and reinforcing in MEMS switch with stability and repeatability. The photoresist (AZ 9260) is spin in three steps as shown in table 3.9. The foregoing recipe (Table 3.9) is used to obtain films of varied thickness. The second step mainly decides the thickness of the film. During this step, almost all of the solvent is evaporated and a solid film is formed. The third step does not affect the thickness; it only accelerates the solvent evaporation. The ramp plays a significant role in deciding the uniformity of the deposited film. Table 3.9: Coating recipe for AZ 9260 photoresist for thickness optimisation Process Step 1 Step 2 Step 3 Spin Speed (RPM) 300 Speed varied * 0 RAMP(RPM/min) 5000 5000 1000 Time (sec) 5 15 0 * Speed varied from 1000-6000 with a step of 500 Two iterations are performed to analyse the effect of the ramp on uniformity as shown in figure 3.21. First iteration is accomplished at lower ramp (300rpm/sec) and other at higher ramp (5000rpm/sec). The 3D surface profiles of photoresist uniformity are shown 48

Thickness (um) in figure 3.21 for lower and higher ramp respectively. The standard deviation for lower and higher ramp is 0.8500 and 0.0933 respectively. It is observed that ramp affects the uniformity and for deposit a uniform layer higher ramp is required. After coating prebake is given for 15 sec at 60ºC (hotplate). The exposure time is 20sec and photoresist is developed using a potassium-based alkaline developer (Hoechst, AZ400K), diluted by 1:4 in deionized (DI) water. The developing time is 130 sec. Effect of spin speed on the photoresist thickness is illustrated in figure 3.22. Post baking is not required for this photoresist. Figure 3.23 shows the SEM micrographs of fabricated AZ mould and perforation. Photoresist profile is observed using tilted view of the micrographs. After the optimisation of photoresist process next step is deposit metal as structural layer. The electroplating process for metal deposition is optimised in next section. Wafer 1, ramp=300 rpm/sec Wafer 5, ramp=5000 rpm/sec Figure 3.21: Effect of ramp on uniformity of photoresist AZ 9260. 12 Ramp=5000 rpm/sec 10 8 6 4 0 1000 2000 3000 4000 5000 6000 Spin speed (rpm) Figure 3.22: Spin speed vs. thickness of AZ 9260. 49

Figure 3.23: SEM micrographs of AZ mould and perforation. 3.4 Electrochemical Deposition Electrochemical deposition involves the reduction of metal ions from aqueous, organic, or fused-salt electrolytes. The reduction of metal ions M z+ in aqueous solution is represented by M z+ (metal ion in solution) + z e (electrons) M (metal deposit) Two processes are used to provide the electrons for the reduction reaction: (1) electroplating (or electroforming), where an external power supply provides the electrons, (2) electroless deposition, where a reducing agent provides the electrons [10, 11]. In MEMS electrochemical deposition is commonly used to deposit surface coatings, or in the case of electroforming, for producing an entire microstructure or device. In electroforming, micro structured moulds of different materials (e.g., polymers/resist, silicon) are electrochemically filled with metals such as gold, nickel and copper. 3.4.1 Electroplating The material properties of electroplated metal is strongly governed by electrolyte chemistry (type and concentration of ions, ph of solution and additives), physical parameters (temperature, current, fluid), and the property of the substrate (surface quality, shape). The electroplating process is optimized depending on the shape of the desired microstructures and metal to be deposited. The basics of electrochemical deposition are found in several excellent books [10-14] and are summarized in this section. 50

3.4.1.1 Electrochemical Reactions The general setup and operation of an electrochemical deposition cell are shown in figure 3.24. Two electrodes are immersed into an electrolyte. By applying an electric current, reduction (electron intake) occurs at cathode, and oxidation (electron liberation) occurs at anode. Metal ions are released at anode via oxidation and adsorbed at cathode via reduction. Substrate is used as cathode so that metal ion is reduced to form a solid metallic layer. The anode is dissolved so that concentration of electrolyte is maintained during electroplating. The two partial reactions are expressed by the following equations. Figure 3.24: Schematic of a general electrochemical deposition cell. Reduction (cathode): M z+ + z e M Deposition of metal Oxidation (anode): M M z+ + z e Dissolution of metal (for a soluble anode) The steady oxidation of the anode (a metal to be deposited) ensures a constant replenishment of metal ions in the electrolyte. Sometimes inert anode such as platinized mesh is also used. In that case, replenishment of electrolyte is made by manual addition of metal salts into plating bath. The theoretical mass of metal deposited at cathode ( ) is governed using Faraday s law as (3.1) Where, M = Molar mass the deposited metal; I = Current, t = Time z = Valency F = Faraday constant (96500 C). 51

Decomposition of water leads to some additional reactions at anode and cathodes. Oxidation of water leads to production of oxygen gas at anode and reduction of water leads to release of hydrogen gas at the cathode. Total overall current is distributed among these different reactions. The percentage of the total current associated with the reduction of metal is defined as the cathodic current efficiency γ, and is calculated by the ratio of the deposited effective mass m eff to the theoretical mass m theo (3.2) If production of hydrogen gas is not suppressed at cathode, it leads to reduction in current efficiency. 3.4.1.2 Deposition Process In the bulk electrolyte, cations are enclosed in a complex shell. This complex shell consists of water molecules (hydration shell) or other complexing agents such as sulfite or cyanide. Before applying a current, the ion concentration is homogeneous at the electrode surface and in the bulk solution. When a current is applied, metal ion is consumed at the electrode and a depletion region so created extends farther away into the bulk as the deposition proceeds. Movement of the complex metal ions in the electrolyte solution is governed by three different mass transport mechanisms: migration, convection, and diffusion. In most of the deposition processes, the conductivity of the electrolyte is relatively high and applied potentials are moderate. Thus most of the electrical field drops across the electrical double layer in front of the electrode and field -induced migration is minimal. Therefore the predominant transport mechanism is convection (due to stirring or agitation of electrolyte) and diffusion with former dominating in the bulk and later at electrode surface. Figure 3.25 illustrated the overall deposition process. In summary, the reduction of the metal ions at the cathode is divided into four parts: (1) diffusion of the solvated or complexed metal ions from the bulk to the electrode surface, (2) dehydration and transport of the cations through the electric double layer, (3) cationic reaction at the solution solid interface (ion uptake and electron transfer), and (4) surface migration and incorporation of the adsorbed metal atoms into the lattice [11]. 52

+ cation (4) - electron water molecules or complexing agent - + + (3) (2) (1) + + Removal of H2O Alignment H2O molecules Hydrated metal ion Cathode Electric double layer Diffusion layer Bulk Solution Figure 3.25: Schematic diagram of the electrochemical deposition process. (a) (b) Figure 3.26: Concentration of metal ions as a function of distance from the cathode (a) for direct current and (b) for pulse current plating [14]. In case of pulse-plating, the pulse current density is limited by the depletion of ions in the pulsation layer, whereas the average current density is limited by the concentration gradient in the outer stationary d i f f u s i o n layer [14]. Thus two diffusion layers are defined: a pulsation layer in the immediate vicinity of the cathode and a stationary layer up to the point where the mass transfer is controlled by convection (figure 3.26). The final step in the formation of a crystalline metal deposit is the incorporation of the adatoms into the lattice. The adatoms are preferentially incorporated at active lattice sites such as grain boundaries, imperfections, or pre-existing built-up adatom clusters on the surface. If the adsorption of an adatom ensued away from an energetically stable 53

position, surface diffusion may transport the adatom to another active lattice site on the surface. The process of either building new grains (nucleation) or contributing to the growth of existing grains is define the formation of metal deposits in electroplating [10]. 3.4.2 Electroplating Process Parameter The parameters generally controlling the composition, structure and properties of the deposit are briefly reviewed in following section. 3.4.2.1 Conditions affecting the structure and properties The environment in the immediate vicinity of the cathode influences the characteristics of electrodeposited metals. Electrodeposits are crystalline in nature and the form of deposit mainly depends on two factors: (a) Rate of formation of the crystal nuclei at cathode by ion discharge and (b) rate of nuclei growth into larger crystals. When condition favours the rapid formation of fresh nuclei near cathode surface, the layer consists of small, fine-grained crystals leading to a smooth and hard deposit. On the other hand, if the circumstances favour rapid increase in nuclei size, the deposited layer consists of large crystals which are rough in appearance. Many parameters do influence the formation of crystal nuclei and its size. Some of them are considered in this study. Current Density: At low current densities, discharge of metal ions occurs at a slow rate allowing for sufficient crystal-nuclei growth time. Consequently the formation of fresh nuclei is unnecessary. The deposits obtained at low current density exhibit a coarse crystalline structure. At increased current density, the rate of discharge of the ions is large, and fresh nuclei tend to form and the deposited layer consists of smaller crystals. Thus increase in current within certain limits yield deposits that are fine grained. However, there is a limit to this improvement because at very high current densities the crystals tend to grow at cathode towards that regions where the solution is more concentrated, thereby creating trees or nodules in the film [13]. Electrolyte composition: This includes the compounds supplying the metal ions (to be deposited) and the supporting ions. The basic functions of the supporting ions or compounds are to stabilize the electrolyte, improve solution conductivity, prevent excessive polarization and passivation (especially anodic), and provide compatibility with the desired plating conditions. Supporting ions or conducting salts reduce the current shared by the metallic ions or complexes, making convection (agitation) a more significant factor. 54

Temperature: Increasing the temperature of electrolyte promotes the diffusion of ions to the cathode preventing impoverishment which can lead to a rough deposit. It also increases the rate of growth of the crystal nuclei leading to a coarser deposit. Maintaining the bath at moderate temperatures, first effect dominates and the quality of deposit improves. However quality of deposit deteriorates at higher bath temperatures. Impurities: Electroplated films contain various types of inclusions/impurities. The sources of these impurities are from one or more of the followings: added chemicals (brighteners, levellers), particles (for composite films), cathodic products (complex metal ions), hydroxides of metal to be deposited, and bubbles (hydrogen gas, etc.). Excessive amount of additives in the electrolyte may cause a brittle deposit leading to break at crystal interface. ph: ph of the bath influences the discharge of hydrogen ions, causing the solution at cathode layer to become alkaline and precipitate hydroxides or basic salts. The inclusion of a significant amount of these compounds makes the resulting deposit exhibit a fine grain structure. 3.4.2.2 Current Waveform Direct current is the preferred mode of current supply for electroplating, a variety of current modulations techniques also exists viz. triangular, saw-tooth and rectangular shaped waveforms. Rectangular waveforms are further divided into two variants: unipolar and bipolar. Table 3.11 illustrates the current waveforms of direct current, pulse forward current, and pulse reverse current. Different current modulation scheme affects the plating mechanism differently and thus the chemical and microstructural properties of the deposited layer can be controlled by varying modulation parameters [14]. The current waveform for pulsed electrodeposition (forward current) consists of cathodic pulses (tc), separated by a current pause (tp). Pulse reverse electrodeposition consists of a cathodic pulse (tc) followed by an anodic pulse (ta), where the current is reversed for a short time. In addition, a pulse pause (tp) is also used. During the cathodic pulse, metal ions are deposited on the cathode surface and loosely bound ions are removed from plating sites during anodic cycle. In pulse plating, mean current density (im) is defined by amplitude and duration of the various pulses. A pulse waveform having the same mean current density as that of a direct current has larger peak amplitude. The advantages of pulse plating over DC plating have been studied extensively. Various 55

metal alloy compositions have been optimized for morphology, magnetic properties, or mechanical properties [15-17]. Pulse reverse electroplating of copper is used in printed circuit boards (PCBs) manufacturing to obtain uniform via and trench filling. 3.4.2.4 Theory and types of pulse supply Current is toggled between ON and OFF state during pulsed plating. During ON period, the concentration of metal ions next to the cathode surface is depleted and a layer rich in water molecules is left. During OFF period, metal ions from bulk solution diffuses into the layer next to the cathode and the cycle repeats itself. During OFF period, desorption of gas bubbles and impurities occur at cathode. Pulse plating is being used in real-to-reel selective plating, in automatic tab platters, on barrel lines, in still plating, electroforming, anodizing, electro-cleaning, electro-polishing and machining and, recently has been adapted by the semiconductor bump and wafer plating technologies [18-20]. Pulse power supply have following advantages: increased plating speed, improved distribution, lower deposit stress, finer grain structure, increased ductility, improved adhesion, increased micro-throwing power, reduced hydrogen embrittlement, and decreased need for additives [18]. 3.4.4. Electroplating equipment Various equipment are used for electroplating, ranging from simple to very complex. For laboratory use, the setup is simple, as shown in figure 3.27. The setup consists of power supply, hotplate, glass beaker and oscilloscope. Beaker contains the electrolyte and rotating magnetic stirrer. The temperature of bath is maintained at a specified constant temperature using the hotplate. A metal plate or platinized titanium mesh is used as the anode. The power supply is equipped with a pulse module to enable pulse plating when desired. An oscilloscope may also be used to monitor the applied pulses. One such custom design electroplating station build in CEERI is shown in figures 3.28. It can hold a large volume of electrolyte and has monitors for liquid (electrolyte) level display, ph, and additives, as well as a continuous filtration of electrolyte and a dummy plating cell for cleaning of the electrolyte. Filtration rids the electrolyte of particles, which are interfering with the deposit. For large-scale manufacturing, continuous filtering, salt replenishment, and ph maintenance are important issues. Also, some baths may generate gaseous by products, so exhaust of these gases are also considered. 56

Table 3.10: Current waveforms for direct current, forward current, and pulsed reverse plating Current waveform Direct current Mean current i m i im Current Density i t c Time t t p ic i m i c c c + p im Current Density i Forward current Time t t a i m i c c i a a c + a + p ia im Current Density i Pulsed current t c t p ic Time t 3.4.5 Electrodeposition of gold for MEMS A gold film is a widely used material for many MEMS devices because of its excellent stability, low electrical resistivity and high reflectivity for infrared rays [21, 22]. The application field of the gold film includes low loss RF-MEMS, high performance electromagnetic, and MEMS mirror with high driving current, high reflective Optical MEMS device, biocompatible package, etc. In these devices, the gold film has been deposited by vacuum evaporation, sputtering, electroless or electroplating using surface activation process or seed layer [21]. Comparing to vacuum evaporation and sputtering, 57

the gold electroplating process was suitable for deposition on silicon three-dimensional structure, because it can cover hidden planes conformally. The advantages of both deposition technologies are in table 3.11. (1) 50 C (2) (3) (4) (5) (6) (7) Cathode: Wafer Temperature Anode: e.g., Titanium filled with metal Inert gas inlet Glass Magnetic stir Hotplate/stirring (8) Power (9) Pulse module Oscilloscope (10) Figure 3.27: Schematic of a laboratory scale electroplating unit. 3.4.5.1 Comparison of gold electrolyte Comparison of gold electrolyte is shown in table 3.12. The mostly used electrolyte electronics industry are cyanide based. But due to the toxicity of the free cyanide formed during electrolysis, sulfite-based gold processes are the traditional alternative for wafer applications. However, sulfite-based processes have suffered from issues with solution stability and the necessity for annealing to achieve the desired deposit hardness. The gold (I) cyanide complex Au(CN) 2- has a stability constant of 10 39, which makes the solution very stable, and shifts the standard reduction potential of gold (I) from 1.71V to 0.61V (SHE) [23]. However, in recent years, the health and safety concerns regarding the use of cyanide have overwhelmed the benefits it brings. In addition, cyanide containing solutions are incompatible with positive photoresists used in the microelectronics industry because they attack the interface between the resist film and the 58

substrate, lifting the resist and depositing extraneous gold under the resist. Therefore, the demand for cyanide-free gold electroplating processes has increased significantly. (a) (b) (c) Figure 3.28: Photograph of a custom design electroplating system for 2-4 wafer, electroplating unit for use in a cleanroom (a) Wafer holder jig with platinized mesh (b) plating facility for cleanroom (c) Dynatronix pulse power supply. Table 3.11: Advantages of both deposition technologies Vacuum Deposition Close tolerances Wide choice of substrates Wide choice of coatings Electroplating Aqueous Deposition Lower costs Thicker coatings Coating complex shapes Control and modification of deposit properties Control of residual stress The gold sulfite complex Au (SO 3 ) 2 3- is the most common alternative to cyanide. This complex has a stability constant of 10 10, much less than that of the gold cyanide complex. 59

Consequently, it is susceptible to disproportionation resulting in the formation of Au (III) and metallic gold, especially at ph less than 7, where sulfite protonates to form bisulfite. Therefore, stability is always an issue for sulfite-based gold electroplating solutions, and stabilizing additives are usually necessary. Gold (I) thiosulfate complex Au (S 2 O 3 ) 3-2 is another alternative to cyanide. Its stability constant (10 28 ) is between cyanide and sulfite complexes and it is stable in weakly acidic solutions. However, thiosulfate ions themselves are not stable without the presence of free sulfite. They undergo disproportionation and produce sulfite ions and free sulfur, which precipitates. Recently, gold plating solutions containing both sulfite and thiosulfate have also been reported. Table 3.12: Comparison of gold electrolyte Cyanide Based Cyanide Au(CN) 2- Toxic Incompatibility with positive photoresists (attack the interface between the resist film and the substrate) stability constant of 10 39 SHE 1.71V to 0.61V Non-Cyanide Based Sulfite Au (SO 3 ) 2 3- thiosulfateau(s 2 O 3 ) 2 3- Non Toxic Better for health and safety concerns Compatible With Photoresists stability constant of 10 10 (solution instability require annealing for deposit hardness) Non Toxic Better for health and safety concerns Compatible With Photoresists stability constant 10 28 (instability of thiosulfate in the absence of free sulfite) ph >7 ph less than 7 stable in weakly acidic Sulfite protonates form bisulfite Sulfite ions and free sulfur cause instability Recently both sulfite and thiosulfate Plating sol. used 3.4.6 Gold electroplating experiments Initially, experiments are carried out for characterization of the electroplating process to achieve an optimum deposition rate and surface roughness. In the present study, a sulfite based solution TSG-250TM (Transene, USA) is used for gold electroplating due to its compatibility with a positive tone photoresist. Process flow decided for the gold film evaluation is illustrated in figure 3.31.The starting substrate is a chromium/gold (30/200 nm) thin seed layer on top of a Si/SiO 2 wafer. Subsequently, the photoresist is patterned on the seed layer which is used as the cathode during the electroplating process while a platinized mesh electrode is used as the anode. 60

Electroplating of Gold for MEMS mechanical structures Cleaning of Wafer Degreasing, RCA, Piranha and HF dip Seed layer formation using sputtering/evaporation Bath selection - Non Cyanide Constant Current source Pulse Rectifier DC Rectifier Parameters Varied: current density, temperature of electrolyte, plating Time (deposit thickness of gold), Duty Cycle Characterise: Deposit thickness, surface roughness, grain size, resistivity using surface profiler, SEM,AFM,XRD and four point probe. Low stress deposit metallic structure with minimum grain size and low roughness Figure 3.29: Process flow used for electroplated Au evaluation. During the electroplating process, an anode/cathode surface area ratio of 1:1 is used with a distance of 3 cm between the electrodes. Electroplating is carried out at different current densities from 1mA cm 2 to 7mA cm 2 for a fixed duration of 10 min at a temperature of 60 0 C. The deposition rate and mean surface roughness (Ra) of the electroplated gold are measured using a Dektak6M profilometer and AFM. The final process parameter is fixed to deposit gold thickness of 2μm at current density of 3.5 ma cm 2 and temperature 60 0 C for 10min. The measured thickness of electroplated gold on metallic structures of various devices showed an average deviation of ±0.1 μm. The current density of 3.5 macm 2 is selected to obtain an electroplated layer with reduced stress and uniform deposition [24-28]. Stress is characterized using surface profiler by curvature measurement method and later using commercial stress measurement system (FSM). 61

Finally, the Cr/Au seed layer used for the plating process is removed in their corresponding etching solutions to get the desired metallic structure. 3.4.6.1 Gold film evaluation Nucleation of plated gold layer is observed after plating of 10 seconds with other parameters fixed as mentioned in section 3.4.6. Figures 3.30 depicts the SEM micrographs during nucleation, the average grain size varies from 20-70nm. Figure 3.31 (a) shows the deposition rate of the electroplated gold for different current density values using DC plating. The deposition rate is higher for higher current density, and hence the thickness of the plated gold increases with current density for a fixed time (10min.). Figure 3.31 (b) shows the RMS surface roughness and grain size for different current densities. It has been observed from figure 3.31 (b) that the roughness and grain size value increases with current density and deposition time [24, 25]. This is due to depletion of gold molecules in the electroplating solution with time. Thus, subsequent addition of the electrolyte during the electroplating process is necessary to maintain the ph value of the plating solution constant and also to reduce the surface roughness. In order to apply the gold plating to MEMS application it is important to evaluate the film characteristics. An internal stress, grain size and a root-mean-square roughness with AFM images of surface morphology versus plating current density for DC and versus duty cycle for pulse plating is shown in figures 3.32 and 3.33. By measuring a curvature of the gold plated silicon specimen, the internal stress is calculated in the gold film using Stoney s equation. As shown in the figure 3.31, internal stress of the gold film is below 70 MPa for pulse plating and 117MPa for DC plating, and it slightly decreases as the plating current increases [25]. Figure 3.31 (b) shows low tensile stress values (35-85 MPa) that are practically independent of film thickness in the 0.4-2µm range. This is due to the dominant contribution of the intrinsic tensile coalescence component. Increasing the density of current from 2 to 6 ma cm -2 or the temperature of the bath from 40 to 70 C, results in higher tensile stress. The grain size in the electrodeposits varies with current density as shown in figure 3.33(b) (from 20 to 70nm at 60 C with increasing current density from 2 to 5 ma cm -2 ).The surface morphology of gold film is measured by AFM. At low current density plating, the plated surface looks rather sparse than at high current density. The AFM micrographs of DC and pulse plating gold of 2µm thickness are shown in figure 3.34. Figure 3.35 (a) shows the SEM micrographs of 2µm plated gold surface topography at Si substrate and 3.35 (b-d) plated gold test structures. 62

Thickness (um) Grain Size (nm) Roughness (nm) Figure 3.30: SEM micrographs average grain size varies from 20-70nm. 5 80 120 4 Measured Thickness Theoretical Thickness 60 110 100 3 90 80 2 40 70 60 1 20 50 0 0 1 2 3 4 5 6 7 8 Current Density (ma/cm 2 ) 2 3 4 5 6 Current Density (ma/cm 2 ) 40 Figure 3.31: (a) Thickness versus current density and (b) RMS surface roughness and grain size versus current density of the DC gold electroplating process. Figure 3.32: (a) Stress versus current density for DC Plating and (b) Stress versus duty cycle for pulse plating of gold. 63

Figure 3.33: Grain size and roughness with surface morphology vs. Pulse duty cycle. (a) (b) (c) (d) Figure 3.34: AFM micrographs of (a, b) DC plating 2D and 3D topography and (c, d) after Pulse plating. 64

(a) (b) Plated Au surface topography at Si substrate Cantilever (c) (d) Guckel Ring Bridge test structure Figure 3.35: SEM Micrographs of electroplated gold structures. X-Ray Diffraction (XRD) analysis X-Ray diffraction is a principal method for determining structure of condensed matter on the atomic scale, including the lattice parameter and microstructure of alloy films. The wavelength range employed for X-Ray diffraction varies from 0.01 to 10 nm, which is of the order of the distance between molecules and crystal lattice constants. By comparing x- ray data with the well-established reference data sources, one can obtain a detailed crystallography and compositional profile. A simple approach to x-ray diffraction from a crystal is to treat it as interference of rays scattered by a multitude of equidistant lattice planes. When the path difference between the scattered waves is an integer multiple times the wavelength λ, there is a maximum in the intensity and constructive interference, described by Bragg s law: nλ = 2d sinθ (3.3) where λ is the incident ray wavelength, θ is the angle between incident ray and the scattering lattice planes, d is the distance between two lattice planes, n is an integer, and 2dsinθ is the path difference between the incoming and the scattered ray. If the unit cell structure of crystal is known, with Miller indices (h, k, l), the lattice parameter, is defined by equation 3.4 from the distance between atomic planes d as below: 65

+ + (3.4) From the theory discussed above, the individual peaks of reflected x-ray intensity provide information about elemental species and micro-structures of the samples studied. By comparing the measured data to those of well-calibrated data, the chemical composition and structure of the films can be profiled. In addition to the chemical information obtained from the X-Ray diffraction spectra, we can also estimate the grain particle diameters from the Debye-Scherrer relation. The XRD data is used for grain size measurement for plated layer. According to Scherer s equation grain size is measured. The governing equations are as follows: Crystalline Size (3.5) Microstrain (3.6) Estimation of number of crystallites (3.7) Where λ: X-ray wavelength (1.54178Å), B is the full width at half maximum, θ Bragg s angle, t film thickness and K constant average value (0.9). Figure 3.36(a) shows XRD peak for 2μm thick plated gold film after deposition and 3.36 (b) shows after annealing at 150 0 C. XRD peak are used to find out grain size using equation 3.5 and crystalline orientation of Au deposit layer. Grain sizes are verified using AFM data. Finer grain size and reduced roughness deposit using pulse power supply also measured using AFM and XRD as shown in figure 3.33. The extracted parameters of electroplated gold for minimum residual stress, fine grain size and roughness are finalized. The resultant optimized plating recipes are used for fabricating single clamped cantilever structures as well as RF MEMS switches. Figure 3.36: (a) XRD patterns of plated Au film before and (b) After annealing at a temperature of 150 0 C 66

Nano indentation of plated layer The Nano indentation is used to measure Hardness (H), Young s Modulus (E) and the stiffness of plated and oxide layer on silicon substrate. The extracted Young s modulus is used in next chapter for extracting residual stress from test structures. Measured data of indentation is depicted in table 3.13, two samples are used, one is silicon oxide of 1µm and another is plated gold of 2µm thickness. Figure 3.37 shows the plated surface before and after the indentation. Table 3.13: Nano indentation measurement on silicon and gold surface Wafer #AO3 (Silicon dioxide) Er (GPa) Standard Deviation ( GPa) H (GPa) Standard Deviation ( GPa) Stiffness (mn/nm) Standard Deviation (mn/nm) 166.02 10.72 10.28 1.44 58.61 3.62 Wafer # FDCO1 (DC plating Au 2μm on Si) 120.58 13.6 1.17 0.15 125.26 15.45 Indentation points (a) Before indentation (b) After indentation Figure 3.37: Gold surface before and after Nano indentation. Copper (Cu) plating experiments for via filling The via filling of silicon cavity is required for packaging of RF MEMS devices. Cu electroplating is used for via filling. Experiments are conducted to fix the process parameter for Cu plating. Copper film is electroplated on gold seed layer for via filling using different current densities varying from 10mA/cm 2 to 70mA/cm 2 at constant temperature (40 C) [29]. The table 3.14 shows SEM micrographs of the Cu plated samples with resistivity at different current densities (CD). Silicon cavity is created using TMAH (Tetra Methyl Ammonium Hydroxide) etching. Figure 3.38 (a) shows SEM 67

micrographs of the silicon cavities before Cu plating and (b) single silicon cavity during Cu electroplating. Table 3.14: SEM micrographs of the Cu plated samples with resistivity [29] Figure 3.38: SEM micrographs of (a) silicon cavities and (b) silicon cavity during Cu filling [29]. 68

3.4.7 Summary of electroplating experiments 1. DC plating optimum current density is 3.5mA/cm 2 at temp. 60 C. 2. Roughness and grain size are increase with current density. 3. Residual stress of gold in DC plating at current densities (3.5 ma/cm 2 ) was found 100-120MPa. Whereas, residual stress in pulse plating is reduced to 35-60MPa at duty cycle 5-15%. 4. Grain size as well as surface roughness decreases 10 times (6-10nm) using pulse power supply. 5. Reduced grain size results bigger grain boundaries hence resistivity decrease. 6. Grain size measurements using XRD and AFM are closely matched. 7. Young s modulus measured for 2µm plated gold using Nano indentation is 99.3GPa, whereas hardness is 1.17GPa. 8. Copper plating parameters for via filling applications are fixed. 3.5 Sacrificial Layer removal using Plasma ashing and CPD In order to control the in-built stress in electroplated structures, it is desirable to realize the metallic structure in two steps. In the first one bridge membrane and CPW are formed with thickness up-to 1.5 μm. In the second step the suspended bridge can be reinforced selectively to reduce the in-built stress. In this step, seventh lithography defines the mould for electroplating using AZ 9260. At this stage the spacer (HiPR 6517) pedestal is covered with the Cr/Au seed layer. Though the required bridge thickness is only 2 μm, a resist thickness greater than 5 μm is required. After pattering mould in AZ 9260, the electroplating of 2 μm thickness is deposit using above optimised process parameters. After the wet removal of electroplating mould in acetone, Au/Cr seed layer is etched in commercially available Au and Cr etchants. The etching of Au seed layer from undesired areas also etches the electroplated Au surface from bridge and CPW. Accordingly the electroplated Au thickness should be more than the desired bridge thickness. In present case, 1.5 μm of bridge thickness is desired; whereas, electroplating has been done to deposit 2 μm thick gold layer. After Au seed layer etching, remaining bridge thickness is 1.5-1.6 μm. This step is followed by Cr seed layer etching. The etchant used for this step is highly selective and does not affect or etch other layers. Slight over-etching is desirable to ensure removal of Cr seed layer from perforations. Final ashing of HiPR hard baked positive photoresist, which is used as a sacrificial layer, is carried out in oxygen plasma stripper (dry release) to prevent stiction of the suspended 69

membrane and Critical Point Drying (CPD) wet release. The final release step is the most critical step in a switch fabrication process, step by step details of each releasing methods are covered in the following section. 3.5.1 Dry Release method (Plasma Ashing) Ashing is the process of dry removal of photoresist by generating mono-atomic reactive species at high RF power. Oxygen and fluorine are the most common reactive species. The reactive species combine with the photoresist to form ash which is removed using a vacuum pump. The basic ashing reaction of oxygen-based plasma with photoresist polymers is [30]: + i + + (3.8) The initial experiments for removal of hard baked PR (HiPR6517) were carried out in simple ashing equipment (laboratory made) typically used for removal of minor PR traces before metallization. After a prolonged ashing cycle in oxygen plasma (approximately 7 hours) at 80 watts of RF power, the PR under the bridges are found intact whereas other directly exposed areas are clean and free from PR residue. The residue remaining under the metallic structures is attributed to the slow lateral etch rate of oxygen plasma. The PR removal in a Drytek megastrip 6 HF plasma wafer asher is also observed to be slow and non-uniform, as the oxygen plasma (at 900watts) is inefficient in removing the hard crust of the PR baked at 180 0 C. For the crust removal, a combination of oxygen and CF 4 is supplied to the plasma chamber in a ratio of 35:1. (a) (b) Metallic bridge Sacrificial layer HIPR 6517 Metallic bridge etching Figure 3.39: (a) Ohmic switch before release (b) After 50 minute exposure to O 2 + CF 4 plasma [31]. 70

Fluorine ions are reported [30] to react with the top surface to form CF3- which acts as a catalyst for faster removal of hardened PR. However, longer exposure (40-50 minutes) to fluorine plasma damages the Au structural layers as shown in figure 3.39. Figure 3.39 (a) and (b) show the bridge of ohmic switch before ashing and after 50 minutes of ashing in O 2 + CF 4 plasma. The crust removal process is optimized using combination of O 2 + CF 4 plasma exposure for 3 minutes followed by oxygen plasma for 90 minutes with 10 minutes on-off cycle. The on-off cycle is required to maintain the processing temperature below a threshold level so that the effects like thin film delamination due to thermal expansion coefficient mismatch, and unwanted dopant diffusion can be avoided. State of art ashing system maintains low substrate temperature by circulating chilled water or maintaining liquid nitrogen ambient around the plasma chamber. Figure 3.40 shows the optical micrographs of PR residue (Au beam removed manually) during and after the ashing. Process parameters of dry release: In this section, the effects of reactive ion etching (RIE) process parameters on the lateral etching rate of the sacrificial photoresist during the dry releasing process are presented. The vertical etch rate of the photoresist varies between 230 and 350nm/min and is faster than the lateral etching rate 38-77nm/min. Therefore, the total release time is mainly determined by the lateral etching of the sacrificial photoresist layer. In the ashing process the chamber pressure is maintained at 400 mtorr with 900watts of RF power as shown in table 3.16. Perforated Au metallic bridge layer Au layer Clean surface inside perforation (a) Remaining Photoresist under the lifted bridge Perforated metallic bridge layer (b) Remaining Spacer PR beneath the lifted bridge during ashing Clean surface after ashing of spacer layer Metallic bridge structural layer (c) Figure 3.40: Optical micrographs after (a) 15 minutes (b) 45 minutes and (c) 90 minutes of ashing [31]. 71

The vertical etch rate affects, after 15 minutes of ashing are visible in figure 3.40(a), the PR directly exposed to plasma is removed whereas, spacer layer under the bridge remains intact. The lateral etch rate affects, after 45 minutes of ashing are shown in figure 3.40(b). Due to lower lateral etch rate the surface is fully clean only after 90 minutes as shown in figure 3.40(c). SEM micrograph of successfully released RF MEMS ohmic switch using optimized plasma ashing is shown in figure 3.41. 3.5.2 Wet release processes 3.5.2.1 Air Dry Etching of photoresist (sacrificial layer) has been done in mild piranha solution (H 2 SO 4 :H 2 O 2 ::10:1) kept at 50-70 C. It is followed by DI water rinse for 3-4 times. The wafer is then immersed in acetone, methanol, and isopropanol (IPA) for 5minutes each respectively. IPA immersed wafer is kept at a small inclination in a petridish. Afterwards, the wafer is dried in an oven at temperature of 120 C. Most of the structures are found stuck to the wafer (typically the central part of the structure) and curled up at corners, as shown in Figure 3.42 (a-b). The wet release method (drying in hot air) though cost effective and simpler, can reproduce high-k (stiffness) structures (> 20Nm) only. The method is found unsuitable for releasing the low stiffness metallic structures (0.05-15N/m) without stiction and deformation [32, 33]. Anchor RF output Suspended Perforated bridge Actuation electrode Suspension spring RF input Anchor Figure 3.41: RF MEMS ohmic switch after plasma ashing. 72

(a) (b) Lifted beam Au beam stick to Si-surface Lifted beam Figure 3.42: (a-b) MEMS switches stucked to substrate and curled up at corners. 3.5.2.2 Critical Point Drying (CPD) release As mentioned above the sacrificial layer is hard baked (180 0 C) positive photoresist (PR) having a plastic like structure. The sacrificial PR layer removal is carried out using mild piranha H 2 SO 4 (10): H 2 O 2 (1) solution while maintaining its temperature between 50-70 0 C. Wafers are held vertically in a beaker as shown in figure 3.43 and dipped for 2-3 minutes in mild piranha to release the photoresist. After spacer layer etching samples are rinsed with DI water. This rinsing step is crucial, because micro machined structures are in hanging stage at this point of time. Samples are subsequently transferred into CPD chamber filled with isopropanol (IPA). The next section gives the detail of working principle and process of CPD [34]. Wafer dipping direction Lifted Structure Figure 3.43: Vertical held wafer in beaker with SEM of lifted structures. 73

Working principle of CPD Various mechanisms (see figure 3.44) have been used to alleviate sticking in MEMS by reducing the surface tension of the final rinse solution. For example, IPA, which has a lower surface tension, is applied after the final water rinse to displace the water. A unique way to reduce surface tension is critical point drying. This technique takes advantage of the vanishing surface tension of a supercritical liquid. The method is explained in detail below. This study indicated that by CPD technology gave superior and consistent results compared to air dry (evaporation) or sublimation drying. The results from other methods are mediocre and the by-products in sublimation drying were toxic and environmentally hazardous. No such by-products were present in supercritical CO 2 drying, but the setup was rather complicated. The methods investigated by these researchers are also summarized in a pressure temperature phase diagram in figure 3.45, which outlines the various paths that are followed to minimize stiction [34-38]. In CPD process, the wafers immersed in IPA are brought into a pressure vessel at room temperature. Liquid CO 2 is then used to replace the IPA during a rinse cycle. IPA is highly miscible with liquid CO 2. Next, the temperature of liquid CO 2 is raised above its critical point. The pressure vessel is then vented at constant temperature at T > Tcr and the CO 2 escapes as a gas. A liquid to solid interface is never formed during the process, hence surface tension is completely suppressed and structure released successfully [37]. Figure 3.44: Pressure temperature phase diagram. 74

Experimental description of CPD equipment Critical point drying mechanism is one of the most efficient and economical methods for removal the sacrificial layers used in conjunction with wet etching methods. The basic mechanism involves the use of wet chemistry to dissolve the sacrificial (photoresist, metal or dielectric) layer and transfer of the process wafer to CPD equipment for drying the liquids without any change in the volume. The extraction of IPA from micro machined samples are performed in a CPD, rated at 2000psi maximum allowable working pressure, which is depicted schematically in figure 3.45 along with chamber details. The CO 2 source gas is supplied by cylinders of technical grade CO 2 which is delivered through a regulator, to a pneumatic compressor. The compressor allows for pressurization above the critical point for CO 2. The gas flows through a 0.5 micron sintered stainless steel filter, into a temperature-controlled extraction vessel. Temperature control is provided by a constant temperature circulating bath which flows heat transfer fluid through a water jacket surrounding the outer wall of the vessel. After leaving the extraction vessel, the CO 2 flows through a high pressure metering valve through which the pressure is reduced. The metering valve is warmed with heat tape to prevent clogging the valve with dry ice that might otherwise be formed due to Joule-Thomson cooling upon expansion of the gas. The pressure is reduced into a temperature controlled 500 ml vessel held at 0 o C. Isopropanol (IPA) is not as soluble in gaseous CO 2 as in CPD, so the solvent condenses and can be trapped in the separator vessel. Finally, the gas is vented out of the laboratory through a suction duct. System pressure is monitored and controlled with a modular pressure controller with analog read-out which controls the pneumatic compressor to maintain the desired system pressure. Over-pressure protection is provided by a 2000 psi burst disc. All tubing is 1/4 inch O.D. (0.065 wall thickness) 316 stainless steel tubing. The extraction vessel is made of Teflon material. The vessel is supported horizontally. To minimize excess vessel volume and to support the silicon wafer pieces being extracted; one hard Teflon half-cylinders are machined to effectively fill the entire vessel volume. At the intersection of the half-cylinders, a channel is machined to allow for CO 2 flow over the samples. On the bottom half-cylinder on which the wafer pieces rest, a deep trough is milled to serve as a reservoir for the IPA. With the Teflon cylinder vessel inserts installed, the large vessel is reduced to an effective volume of about 200 ml. This arrangement forces CO2 to flow in more direct contact with the isopropanol being extracted from the micro machined samples. 75

Exhaust duct Filter Pressure gauge Temperature gauge Process Chamber CO 2 Cylinder Critical Point Dryer- CPD Figure 3.45: Critical point dryer (CPD) System. Process flow in CPD: There are five mode of operation on CPD are as follows, the schematic of the system is shown in figure 3.46. Cool: The process mode in which coolant material is used to reduce the initial chamber temperature. Fill: During this mode LCO 2 is filled inside the chamber through fine nozzle in Teflon vessel. Purge: The flow rate with which material IPA is replaced by LCO 2. Always maintain fill rate greater than purge rate. If purge rate greater than fill rate, the liquid level in the process chamber will gradually drop below the level of sample. Therefore it is important to maintain grater fill flow rate in the chamber than purge flow rate leaving the chamber. This will insure that sample is always covering with liquid during purge. Heat: During this mode temperature of the chamber increase along with pressure. This stage is continue until it reaches critical point in temperature (31 0 C) as well as pressure (1072psi) scale on measuring gauge. Table 3.15 illustrate the change in temperature and pressure with time during critical point. Bleed: a stage at which LCO 2 and remaining IPA residual drain out after attaining critical point. Vent: The stage at which pressure reduces to atmosphere and temperature reduce to room temperature, sample is clean and dry. 76

Cool Fill Purge Heat Bleed Vent Figure 3.46: CPD schematic for process flow. Table 3.15: Change in pressure and temperature during critical point Critical Point passage Heat Pressure Reduction Time (Minute) Pressure (PSI) Temperature ( º C) Pressure (PSI) Temperature ( º C) 0 800 6 1460 34 2 1300 20 1180 36 4 1460 28 1140 37 6 1480 32 1060 39 8 1450 33 900 39 10 1460 34 710 38 12 500 38 14 380 39 Figure 3.47 (a)-(d) shows SEM micrographs of cantilever array, beams, switch and test structure released using CPD. The abnormally high vertical deformation of structures is attributed to the placement strategy (in vertical direction) of wafers while dissolving the PR and rinsing. The vigorous chemical reaction and turbulence caused during rinsing lifts the structures upwards if held vertically (figure 3.43). (a) (b) Cantilever array Beam array (c) (d) MEMS switch curl bridge MEMS Test structure curling due to vertical release Figure 3.47: (a-d) Micrographs of CPD released structures when wafer held vertically. 77

Improved CPD release method The improvement in wet etching process is carried out by placing wafer in horizontal boat during rinsing and etching. Placing the wafers in horizontal direction and gentle stirring shows a drastic improvement. The method is found suitable for all types of micro machined structures. The microstructures are an assortment of RF MEMS switches, single pole double throw (SPDT), single pole four throw (SP4T), MEMS Test structure, cantilever and bridge test structures [39]. Figure 3.48 (a,b) shows successfully released RF MEMS ohmic switch and Au cantilever array extracted using CPD method which are free standing with minimal deformation in case of longer cantilever. 3.5.3 Summary of releasing methods CPD is demonstrated to release low stiffness metallic microstructures without stiction and deformation. In contrast, approximately 90% of the air dried samples are stuck as shown in figure 3.42. The air drying method resulted in surface stiction in the MEMS switches. For some supercritically extracted samples, fabrication problems observed during etching of vertically held wafers are resolved. Metallic structures are also released using modified plasma ashing (CF 4 +O 2 ) without any stiction problem. Some of the structures have deformation due to rise in temperature of plasma asher. However intermittent plasma ashing using a 10 minutes on-off cycle, to maintain temperature inside the asher approximately at 80 0 C, improves the planarity of structures. The structures released with wet etching using CPD, are free from stiction and buckling as shown in figure 3.48. Table 3.16 summarizes the procedure and process parameters for all the releasing methods with a comparison of their merits and demerits. Table 3.16: Comparative summary of release methods Release Methods Plasma Ashing Supercritical CPD drying Air Drying Procedure Parameters O 2 [100%] CF 4 [20%] + O 2 [80%] (2-3min), O 2 [100%] 78 Mild piranha + DI water + IPA Mild piranha + DI water + IPA RF Power (watt) 80 900 N/A N/A Chamber pressure (torr) 0.112 0.4 N/A N/A Maximum temp. ( 0 C) 60 80 0 N/A Melting Temp. ( 0 C) N/A N/A -56.4 [2] -97.5 [2] Boiling Temp. ( 0 C) N/A N/A -78.3 [2] 64.7 [2] Surface tension (mn/m) N/A N/A 1.16 [2] 22.65 Process time (min.) 410 3+87 30 60 Advantage Compatible with IC processing Stiction free, No photoresist Simple Disadvantage Complex recipes, residual stress, time consuming residue, less process time Wet chemistry control Mediocre results

Dry release using plasma ashing typically results in damage to metallic structures or stress related deformation due to rise in temperature (>80 0 C). Plasma ashing with10 minutes on-off cycle is found appropriate to release structures without deformation. CPD being a low temperature (31.1 0 C) process is more suitable for compliant structures without any deformation due to residual stress. (a) (b) Contact bumps Free standing moveable beam without deformation Suspension spring Figure 3.48: (a, b) RF MEMS Ohmic switch and cantilever array released using CPD. 3.6 Conclusions Fabrication process for suspended metallic structures without any deformation or buckling is presented. The out of plan deformation in microstructures are attributed to residual stress of metallic layer. The metallic layer is deposited using electroplating process. Electroplating process is improved using pulse power supply and fine grained (5-8 nm), reduced stress (30-70 MPa) and uniform thickness layer is deposited. Photoresists (S 1813, HiPR 6517, AZ 4620 and 9260) profiles and recipes for various thicknesses (1-10µm) are optimised. The suspended microstructures are released using plasma ashing (dry release) and CPD (wet release) techniques. Both releasing process are optimised for minimum structural deformation. The improved processes (electroplating and releasing using CPD) results in minimum deformation of 4-5µm in the micro machined structures. 79