Diffusion in Solids. Why is it an important part of processing? How can the rate of diffusion be predicted for some simple cases?

Similar documents
Chapter 5: Diffusion

Chapter 5: Diffusion

Preparation of Materials Lecture 6

PY2N20 Material Properties and Phase Diagrams

Chapter 5: Diffusion. Introduction

CHAPTER 5: DIFFUSION IN SOLIDS

10/7/ :43 AM. Chapter 5. Diffusion. Dr. Mohammad Abuhaiba, PE

N = N A ρ Pb A Pb. = ln N Q v kt. 지난문제. Below are shown three different crystallographic planes for a unit cell of some hypothetical metal.

10/8/2016 8:29 PM. Chapter 5. Diffusion. Mohammad Suliman Abuhaiba, Ph.D., PE

11/2/2018 7:57 PM. Chapter 5. Diffusion. Mohammad Suliman Abuhaiba, Ph.D., PE

CHAPTER 5 DIFFUSION PROBLEM SOLUTIONS

CHAPTER 6 OUTLINE. DIFFUSION and IMPERFECTIONS IN SOLIDS

Diffusion and Fick s law. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India

Imperfections: Good or Bad? Structural imperfections (defects) Compositional imperfections (impurities)

Defects and Diffusion

Chapter 5: Atom and Ion Movements in Materials

diffusion is not normally subject to observation by noting compositional change, because in pure metals all atoms are alike.

Chapter 5. Imperfections in Solids

CHAPTER 4 DIFFUSIVITY AND MECHANISM

Modeling Diffusion: Flux

(12) 1. Just one True and False question and a couple of multiple choice calculations, circle one answer for each problem, no partial credit.

Material Science. Prof. Satish V. Kailas Associate Professor Dept. of Mechanical Engineering, Indian Institute of Science, Bangalore India

Learning Objectives. Chapter Outline. Solidification of Metals. Solidification of Metals

Chapter 4: Imperfections (Defects) in Solids

Question Grade Maximum Grade Total 100

CHAPTER 5 IMPERFECTIONS IN SOLIDS PROBLEM SOLUTIONS

Student Name: ID Number:

LN Introduction to Solid State Chemistry. Lecture Notes No. 9 DIFFUSION

Aeronautical Engineering Department

MSE 170 Midterm review

CHAPTER 5 IMPERFECTIONS IN SOLIDS PROBLEM SOLUTIONS ev /atom = exp. kt ( =

J = D C A C B x A x B + D C A C. = x A kg /m 2

Microelettronica. Planar Technology for Silicon Integrated Circuits Fabrication. 26/02/2017 A. Neviani - Microelettronica

Diffusion phenomenon

Homework #4 PROBLEM SOLUTIONS

Department of Mechanical Engineering University of Saskatchewan. ME324.3 Engineering Materials FINAL EXAMINATION (CLOSED BOOK)

atoms = 1.66 x g/amu

Crystal Defects. Perfect crystal - every atom of the same type in the correct equilibrium position (does not exist at T > 0 K)

12/10/09. Chapter 4: Imperfections in Solids. Imperfections in Solids. Polycrystalline Materials ISSUES TO ADDRESS...

Impurities in Solids. Crystal Electro- Element R% Structure negativity Valence

Materials Science. Imperfections in Solids CHAPTER 5: IMPERFECTIONS IN SOLIDS. Types of Imperfections

Atom and Ion Movements in Materials

Chapter 19: Thermal Properties

Physical Metallurgy Friday, January 28, 2011; 8:30 12:00 h

Section 4: Thermal Oxidation. Jaeger Chapter 3. EE143 - Ali Javey

Introduction to Engineering Materials ENGR2000 Chapter 19: Thermal Properties. Dr. Coates

Announcements. Chapter 19-1

PROPERTIES OF MATERIALS IN ELECTRICAL ENGINEERING MIME262 IN-TERM EXAM #1

HOMEWORK 6. solutions

N = N A Al A Al. = ( atoms /mol)(2.62 g /cm 3 ) g /mol. ln N v = ln N Q v kt. = kt ln v. Q v

CRYSTAL STRUCTURE, MECHANICAL BEHAVIOUR & FAILURE OF MATERIALS

Point Defects. Vacancies are the most important form. Vacancies Self-interstitials

Imperfections in Solids. Imperfections in Solids. Point Defects. Types of Imperfections

Imperfections, Defects and Diffusion

CHAPTER 4: Oxidation. Chapter 4 1. Oxidation of silicon is an important process in VLSI. The typical roles of SiO 2 are:

Dept.of BME Materials Science Dr.Jenan S.Kashan 1st semester 2nd level. Imperfections in Solids

Physics of Materials: Defects in Solids. Dr. Anurag Srivastava. Indian Institute of Information Technology and Manegement, Gwalior

Point coordinates. x z

Chapter 7: Dislocations and strengthening mechanisms. Strengthening by grain size reduction

Kinetics. Rate of change in response to thermodynamic forces

Phase Transformation of Materials

Lecture 7: Solid State Reactions Phase Diagrams and Mixing

ME 254 MATERIALS ENGINEERING 1 st Semester 1431/ rd Mid-Term Exam (1 hr)

ISSUES TO ADDRESS...

Chapter 18: Electrical Properties

MSE 230 Fall 2007 Exam II

Definition and description of different diffusion terms

1. Use the Ellingham Diagram (reproduced here as Figure 0.1) to answer the following.

The Diffusion Equation I L2 10/31/06

Chapter 5. UEEP2613 Microelectronic Fabrication. Diffusion

Point coordinates. Point coordinates for unit cell center are. Point coordinates for unit cell corner are 111

Section 4: Thermal Oxidation. Jaeger Chapter 3

Changing the Dopant Concentration. Diffusion Doping Ion Implantation

CHAPTER 8: Diffusion. Chapter 8

Part IB Paper 3: MATERIALS. Examples Paper 3 : Materials Processing - fssued 01 Controlling Microstructure and Properties

MSE 230 Fall 2003 Exam II

Creep and High Temperature Failure. Creep and High Temperature Failure. Creep Curve. Outline

Point Defects in Metals

Introduction to Materials Science

Materials of Engineering ENGR 151 CORROSION ELECTRICAL PROPERTIES

From sand to silicon wafer

Chapter 10, Phase Transformations

MICROCHIP MANUFACTURING by S. Wolf

3. A copper-nickel diffusion couple similar to that shown in Figure 5.1a is fashioned. After a 700-h heat treatment at 1100 C (1373 K) the

EE 5344 Introduction to MEMS. CHAPTER 3 Conventional Si Processing

Introduction to Engineering Materials ENGR2000 Chapter 4: Imperfections in Solids. Dr. Coates

Electrical conductivity

Chapter 8 Strain Hardening and Annealing

Carburization: A study on the Case Hardening of Steels. By, Hans Cocks

CME 300 Properties of Materials. ANSWERS Homework 2 September 28, 2011

Doping and Oxidation

8 The intermetallic diffusion mechanism in composite Pd

Defect in crystals. Primer in Materials Science Spring

Chapter 16 Corrosion and Degradation of Materials

3.40 Sketch within a cubic unit cell the following planes: (a) (01 1 ) (b) (112 ) (c) (102 ) (d) (13 1) Solution

Lecture 20: Eutectoid Transformation in Steels: kinetics of phase growth

Atomic Transport & Phase Transformations. PD Dr. Nikolay Zotov

CRYSTAL GROWTH, WAFER FABRICATION AND BASIC PROPERTIES OF Si WAFERS- Chapter 3. Crystal Structure z a

Diffusion & Crystal Structure

Physical Properties of Materials

Transcription:

Diffusion in Solids ISSUES TO ADDRESS... How does diffusion occur? Why is it an important part of processing? How can the rate of diffusion be predicted for some simple cases? How does diffusion depend on structure and temperature? 1

Review: Types of solid solutions Cu-Ni Fe-Fe 3 C What are the atomic structures of the Cu-Ni solid solution? What about the Fe-Fe 3 C solid solution (austenite)? Are these the same?

Solute atoms in Alloys Two outcomes if impurity (B) added to host (A): Solid solution of B in A (i.e., random dist. of point defects) OR Substitutional solid soln. (e.g., Cu in Ni) Interstitial solid soln. (e.g., C in Fe) Solid solution of B in A plus particles of a new phase (usually for a larger amount of B) Second phase particle --different composition --often different structure. 3

Diffusion Diffusion - Mass transport by atomic motion Mechanisms Gases & Liquids random (Brownian) motion Solids vacancy diffusion or interstitial diffusion 4

Interdiffusion: In an alloy, atoms tend to migrate from regions of high concentration to regions of low concentration Initially Diffusion After some time Adapted from Figs. 5.1 and 5., Callister 7e. 5

Self-diffusion: In an elemental solid, atoms also migrate. Label some atoms D C A B Diffusion After some time C A B D 6

Vacancy Diffusion: Diffusion Mechanisms atoms exchange with vacancies applies to substitutional impurities atoms rate depends on: --number of vacancies --activation energy to exchange. increasing elapsed time 7

Diffusion Simulation Simulation of interdiffusion across an interface: Rate of substitutional diffusion depends on: --vacancy concentration --frequency of jumping. (Courtesy P.M. Anderson) 8

Diffusion Mechanisms Interstitial diffusion smaller atoms can diffuse between atoms. Adapted from Fig. 5.3 (b), Callister 7e. More rapid than vacancy diffusion 9

Processing Using Diffusion Case Hardening: --Diffuse carbon atoms into the host iron atoms at the surface. --Example of interstitial diffusion is a case hardened gear. Adapted from chapter-opening photograph, Chapter 5, Callister 7e. (Courtesy of Surface Division, Midland-Ross.) Result: The presence of C atoms makes iron (steel) harder. Surface hardness makes it harder to initiate cracks better fatigue resistance 10

Doping silicon with phosphorus for n-type semiconductors: Process: 0.5 mm 1. Deposit P rich layers on surface. Processing Using Diffusion. Heat it. silicon 3. Result: Doped semiconductor regions. magnified image of a computer chip light regions: Si atoms silicon light regions: Al atoms Adapted from chapter-opening photograph, Chapter 18, Callister 7e. 11

Diffusion How do we quantify the amount or rate of diffusion? moles(or mass)diffusing mol kg J Flux or surfacearea time cm s m Measured empirically Make thin film (membrane) of known surface area Impose concentration gradient Measure how fast atoms or molecules diffuse through the membrane s J M At l A dm dt M = mass diffused time J slope 1

Steady-State Diffusion Rate of diffusion independent of time Flux proportional to concentration gradient = dc dx C 1 C 1 Fick s first law of diffusion C C J D dc dx if linear dc dx x 1 x x C x C x C x 1 1 D diffusion coefficient 13

Example: Chemical Protective Clothing (CPC) Methylene chloride is a common ingredient of paint removers. Besides being an irritant, it also may be absorbed through skin. When using this paint remover, protective gloves should be worn. If butyl rubber gloves (0.04 cm thick) are used, what is the diffusive flux of methylene chloride through the glove? Data: diffusion coefficient in butyl rubber: D = 110 x10-8 cm /s surface concentrations: C 1 = 0.44 g/cm 3 C = 0.0 g/cm 3 14

Example (cont). Solution assuming linear conc. gradient C 1 paint remover glove x 1 x t b 6D C skin J Data: - D dc dx C D x D = 110 x 10-8 cm /s C 1 = 0.44 g/cm 3 C = 0.0 g/cm 3 x x 1 = 0.04 cm C x 1 1 J (110 x 10-8 cm (0.0 g/cm 0.44 g/cm /s) (0.04 cm) 3 3 ) 1.16 x 10-5 g cm s 15

Diffusion and Temperature Diffusion coefficient increases with increasing T. D D 0 Q d exp or D D0 RT exp D = diffusion coefficient [m /s] D 0 = pre-exponential [m /s] Q d = activation energy [J/mol or ev/atom] R = gas constant [8.314 J/mol-K] k B = Boltzmann s constant = R/N A = 8.617x10-5 ev/k T = absolute temperature [K] Qd k T B 17

1500 1000 600 300 Diffusion and Temperature D has exponential dependence on 1/T 10-8 T(C) D (m /s) D interstitial >> D substitutional 10-14 C in a-fe C in g-fe Al in Al Fe in a-fe Fe in g-fe 10-0 0.5 1.0 1.5 1000 K/T Adapted from Fig. 5.7, Callister 7e. (Date for Fig. 5.7 taken from E.A. Brandes and G.B. Brook (Ed.) Smithells Metals Reference Book, 7th ed., Butterworth-Heinemann, Oxford, 199.) 18

Example: At 300ºC the diffusion coefficient and activation energy for Cu in Si are D(300ºC) = 7.8 x 10-11 m /s Q d = 41.5 kj/mol What is the diffusion coefficient at 350ºC? D transform data ln D Temp = T 1/T lnd lnd lnd 0 lnd Q R 1 d 1 T D ln D 1 and Q R d lnd 1 1 1 T T1 lnd 0 Q R d 1 T1 19

Example (cont.) D D 1 exp Q R d 1 T 1 T 1 T 1 = 73 + 300 = 573 K T = 73 + 350 = 63 K D (7.8 x 10 11 m 41,500 J/mol /s) exp 8.314 J/mol-K 1 63K 1 573K D = 15.7 x 10-11 m /s 0

Non-steady State Diffusion The concentration of diffucing species is a function of both time and position C = C(x,t) In this case Fick s Second Law is used Fick s Second Law C t D C x 1

Non-steady State Diffusion Copper diffuses into a bar of aluminum. Surface conc., C s of Cu atoms bar pre-existing conc., C o of copper atoms C s Adapted from Fig. 5.5, Callister 7e. B.C. at t = 0, C = C o for 0 x at t > 0, C = C S for x = 0 (const. surf. conc.) C = C o for x =

Solution: C x,t C C C s o o 1 erf x Dt C(x,t) = Conc. at point x at time t erf (z) = error function z e y 0 dy erf(z) values are given in Table 5.1 3

Solution: C x, t C C C s o o 1 erf x Dt erfc x Dt C(x,t) = Conc. at point x at time t erf (z) = error function z e y 0 dy erf(z) values are given in Table 5.1 C S C(x,t) C o 4

Non-steady State Diffusion Sample Problem: An FCC iron-carbon alloy initially containing 0.0 wt% C is carburized at an elevated temperature and in an atmosphere that gives a surface carbon concentration constant at 1.0 wt%. If after 49.5 h the concentration of carbon is 0.35 wt% at a position 4.0 mm below the surface, determine the temperature at which the treatment was carried out. C( x, t) Co x Solution: use Eqn. 5.5 1 erf Cs Co Dt 5

Solution (cont.): C( x,t ) C C C s o o 1 erf x Dt t = 49.5 h x = 4 x 10-3 m C x = 0.35 wt% C s = 1.0 wt% C o = 0.0 wt% C( x, t) C C C s o o 0.35 0.0 1.0 0.0 1 erf x Dt 1 erf( z) erf(z) = 0.815 6

Solution (cont.): We must now determine from Table 5.1 the value of z for which the error function is 0.815. An interpolation is necessary as follows z erf(z) 0.90 0.7970 z 0.815 0.95 0.809 z 0.90 0.815 0.7970 0.95 0.90 0.809 0.7970 z 0.93 Now solve for D z x Dt D x 4z t D x 4z t (4 x 10 (4)(0.93) 3 m) (49.5 h) 1h 3600s.6 x 10 11 m /s 7

Solution (cont.): To solve for the temperature at which D has above value, we use a rearranged form of Equation (5.9a); from Table 5., for diffusion of C in FCC Fe D o =.3 x 10-5 m /s Q d = 148,000 J/mol T Qd R( lnd lnd) o T (8.314 J/mol- K)(ln.3x10 148,000 J/mol 5 11 m /s ln.6x10 m /s) T = 1300 K = 107 C 8

Summary Diffusion FASTER for... open crystal structures materials w/secondary bonding smaller diffusing atoms lower density materials Diffusion SLOWER for... close-packed structures materials w/covalent bonding larger diffusing atoms higher density materials 31