Capacitor Consortium Meeting CU-ICAR January 21, 2009

Capacitor Consortium Meeting CU-ICAR January 21, 2009

Outline KEMET Background Some New Products Film and Electrolytic Capacitors for Green applications Low Inductance Ta-Polymer For Decoupling Applications High Voltage Tantalum-Polymer for Power Supply 200 C Ceramics for Extreme Environments

KEMET Milestones 2007 Arcotronics acquisition 2007 2006 2004 2001 Evox Rifa acquisition EPCOS tantalum business acquisition TS16949 Certification First Solid Aluminum Capacitors (AO-CAP) 1997 First Organic Polymer Capacitors (KO-CAP) 1997 QS-9000 Certification 1992 KEMET went public 1987 KEMET Electronics Corporation was formed by a management LBO 1950 s Transistors and solid tantalum capacitors were invented by Bell Labs 1919 1930 KEMET began manufacturing barium-aluminum alloy getters for use in vacuum tubes KEMET Laboratories was founded by Union Carbide

Sales ($ Millions) 900 800 700 600 500 400 300 200 100 0 2005 2006 2007 2008

Worldwide Locations Greenville, SC USA Weymouth, UK Landsberg, Germany Suomussalmi, Finland Granna, Sweden Monterrey, Mexico Suzhou, China Matamoros, Mexico Anting, China Victoria, Mexico Evora, Portugal Bologna, Italy Batam, Indonesia Nantong, China

Balanced Business Mix: Market Segments and Products End Markets Product Lines Automotive 14% Other 3% Consumer 10% Computer 17% Film & Electrolytic 32% Ceramic 23% Industrial 26% Tantalum 45% Medical 3% Mil/Aero 5% communication 22% September 30, 2008 September 30, 2008

Green Energy Applications DC-Link Capacitor

Power Capacitors for Green Applications DC-Link and AC Filter Small Film Electrolytic Large Brick Film For low power application. PCB mounting FOR SOLAR POWER (several parallel in a bank) For medium/high power application. For modular solution FOR INDUSTRIAL OR WIND POWER For medium/high power application. FOR HYBRID AUTOMOBILE AND INDUSTRIAL POWER

μp Power Distribution Networks Stepped Load PDN Power Flow Power Source mp VRM Cdie Cpackage Cmid Cbulk Response Time: 100 s ps 1 s ns 10 s ns 100 s ns 1 s ms Frequency: 1 GHz 100 MHz 10 MHz 1 MHz 100 khz Rev Term and IDC Ceramic Hi Cap Ceramic Electrolytics

μp Power Distribution Networks Stepped Load PDN Power Flow Power Source mp VRM Cdie Cpackage Cmid Cbulk Response Time: 100 s ps 1 s ns 10 s ns 100 s ns 1 s ms Frequency: 1 GHz 100 MHz 10 MHz 1 MHz 100 khz Low ESL Polymer Electrolytic

Comparison of Standard and Low ESL Construction KEMET T520V ~1250pH @ 100 MHz KEMET T528Z ~110pH @ 100 MHz ESL is driven by loop area defined by the HF current path above the circuit board plane

Voltage at Capacitor (Vdc) Comparison of Standard and Low ESL Solutions 1.5 Decoupling Performance with ~80 A, 4 μs Pulse 1.0 0.5 0-1x10-6 0 2 Cer. + 3 Conv. Ta 2 Low-ESL T528Z Ta 1x10-6 2x10-6 3x10-6 4x10-6 Time (s) EKR, 1/19/2009

KEMET T528Z in Laptop with No Bulk Ceramics Voltage Probe

Progress in Tantalum Capacitors ESR (mω) 1400 1200 1000 800 600 400 200 0 150 V 50 V 25 V Wet MnO2 Polymer 1940 1950s 1990s ESR WVmax Vmax (V) 160 140 120 100 80 60 40 20 0 D-case

Breakdown Voltage 300 250 200 150 100 50 0 Breakdow n Voltage (V) 0 100 200 300 Form ation Voltage (V) Conventional Poly New Poly MnO2

KO High Voltage Product Development KEMET Introduces the First 35 Volt Rated Polymer Tantalum Capacitor

Current (A) Clemson-KEMET Joint Research 10-6 10-7 Slurry & In-Situ Polymer I-V @ T = 300K Delay Time = 65 seconds Local charge forms in In-situ polymer on its interface with Ta Oxide during polymerization reaction, pinning the barrier on IS interface. In case of Slurry, the barrier on I/S interface is not pinned, it increases with voltage, which results in low current and Hi BDV at normal polarity. MIS Model (Al-SiO2-Si) 10-8 10-9 10-10 Slurry Polymer In-Situ Polymer -10-5 0 5 10 15 20 25 30 Voltage (V) Me (Ta) I (Ta2O5) p-s (PEDT) Surface charge on I/S interface with In-situ Poly

ESR, mohm Working Voltage, V Future Possibilities ESR, WV, CV/cc Evolution of Ta Capacitors 1400 1200 1000 800 600 400 200 150 V 60 V 25 V 35 V 160 140 120 100 80 60 40 20 0 0 Wets 1940s MnO2 1950s Poly 1990s Poly 2008 Poly 2010 ESR, mohm CV/cc, arbitrary Working V

Percent Change (%) Max. CAP (nf) Percent KEMET s new BME-C0G 1000 100 10 PME 25V C0G BME 25V C0G PME 50V C0G BME 50V C0G PME 100V C0G BME 100V C0G BME PME 99 95 90 80 70 60 50 40 30 Sample BME1206-103 PME1206-103 1 20 10 0.1 0402 0603 0805 1206 1210 Case Size (EIA) 5 1 1 HALT was run at 175 C and 400V 10 100 1000 Time-to-failure (minutes) 10000 Temp. Coeff. of Capacitance (TCC) Comparison 10 0-10 -20-30 -40-50 -60-100 -50 0 50 100 150 200 250 Temperature ( C) TCC C0G (no DC bias) TCC X7R (no DC bias) TCVC C0G (at Vr) TCVC X7R (at Vr)

High Temperature MLCC Offering Characteristic KEMET C0G Industry 200 C X7R Capacitance/Voltage Ratings TCC (Temperature Stability) VCC (Voltage Stability) Aging Rate Piezoelectric Effects ESR/Q Factor Stability Insulation Resistance Stability

Imaging & drilling tool High Temperature (200 C) Product Line Description Surface Mount MLCC s and stacked capacitors capable of 200 C applications Surface mount chips with reliable BME C0G & PME X7R dielectrics featuring world class TCVC characteristics and high reliability. C0G SMD s that exceed X7R max cap at application temperatures. Sn plating for excellent solderability. Stacked MLCC Applications: Bypass, filtering, decoupling capacitors Markets Downhole Drilling Defense and Aerospace Single Chip MLCC