Supplementary Figure 1. Thermal IMT hysteresis data on crystal #30. Raman spectra

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2.0 a 2.2 302.2 K b 302.2 K c 313.2 K 1.8 313.2 K 2.0 323.2 K 323.2 K 333.2 K 1.8 343.2 K 1.6 333.2 K 343.2 K 348.2 K 1.6 350.7 K 1.4 353.2 K 363.2 K 353.2 K 373.2 K 1.4 363.2 K 1.2 383.2 K 373.2 K 1.2 383.2 K 1.0 1.0 0.8 0.8 Heating 0.6 0.6 0.4 Cooling Intensity (separated for clairty) 0.4 0 200 400 600 800 1000 Raman shift (cm -1 ) Intensity (separated for clairty) 0.2 ω V-O (cm -1 ) 0 200 400 600 800 1000 Raman shift (cm -1 ) 655 650 645 640 635 630 Heating Cooling 625 290 300 310 320 330 340 350 360 370 380 390 Temperature (K) Supplementary Figure 1. Thermal IMT hysteresis data on crystal #30. Raman spectra of crystal #30 on heating (a) and cooling (b) through the thermal transition. Metallic stripes appear at 348 K and the microcrystal is fully metallic above 385 K. Extracted ω V O peak position showing the evolution of the insulating phase through the T phase upon heating. At 363 K, the remaining insulating stripes transition to the M2 phase (see also [2]). 1

347.2 K 344.8 K 344.0 K 343.2 K 342.8 K Supplementary Figure 2. Variable domain pattern in the thermal IMT. s-snom imaging during repeated cooling cycles showing irreproducible break-up pattern of metallic domains on a VO 2 microcrystal. Scale bars are 500 nm. Scans from the first cooling sequence (top row) and the second cooling cycle (bottom row, images at the same temperatures are stacked vertically) show a meandering pair of domains on the left that break around T = 344.0 K at nearly the same locations in the different cycles, but exhibit different domain patterns at T = 343.2 K (red circles) that cannot be explained by hysteresis effects since they begin and end with roughly the same domain pattern. This also may not be explained by difference in temperature since they are qualitatively different domain patterns that do not match a corresponding temperature in the other cycle. 2

Crystal No. Fluence (mj cm 2 ) ω V O (cm 1 ) τ f (fs) τ s (fs) a Crystal size (µm) 1 3.3 617.5 168 3580 0.02 33.6 2 5.3 631.4 70 2000 0.03 12.3 3 4.5 629.3 80 2050 0.1 5.5 4 3.3 630.2 92 2500 0.3 7.3 5 4.5 632.1 66 2000 0.1 10.4 6 4.5 632.5 71 2500 0.01 11.3 7 3.3 621.3 147 2000 0.3 4.9 8 3.0 627.2 125 2860 0.4 4.8 3.7 627.2 128 2010 0.2 4.8 9 3.3 624.9 119 2000 0.3 6 10 3.3 618.7 118 2100 0.3 2.9 11 2.5 616.9 68 2000 0.1 3 3.3 616.9 111 2590 0.2 3 12 2.4 626.2 55 2020 0.2 10 13 2.2 616.9 42 8620 3E-06 3 2.4 616.9 77 5000 0.01 3 2.5 616.9 92 2000 0.01 3 2.8 616.9 92 2000 0.2 3 14 2.4 625.5 71 10000 0.01 9 15 2.3 626.3 76 9720 3E-05 9 2.5 626.3 80 2010 0.05 9 3.3 626.3 130 2010 0.2 9 3.3 626.3 121 2760 0.4 9 16 2.4 617.1 97 9950 0.009 2.3 2.6 617.1 84 9990 0.01 2.3 17 2.6 619.8 108 2000 0.2 4.8 18 3.6 625.5 97 2000 0.1 9 3.6 625.5 83 3600 0.3 9 19 7.0 614.4 157 2000 0.2 6 3

20 7.0 648.7 156 8250 0.002 6 21 5.3 632.2 42 9990 5E-07 11.5 5.3 632.2 52 6840 2E-07 11.5 21(p) 5.3 632.2 107 2000 0.05 11.5 22 8.2 640.2 71 10000 0.04 13 23 4.1 628.9 199 5860 0.01 2.5 24 4.1 641.5 119 2000 0.03 4.5 25 8.2 643.0 76 6710 5E-06 10.4 26 8.2 640.1 115 2010 0.2 5.6 27 8.2 642.7 42 6290 5E-07 7.5 28 8.2 642.7 107 2000 0.05 10 29 0.8 636 7.2 Supplementary Table I: Fit parameters plotted in Figure 4 of main text. Measurement 21(p) was taken on crystal #21, with pump polarization perpendicular to the c R -axis, while the other measurements were performed with pump parallel to the c R -axis. Coherent phonon measurements were performed on crystal #29, at the specified fluence. Crystal No. Fluence (mj cm 2 ) ω V O (cm 1 ) τ f (fs) τ s (fs) a Temperature (K) 30 3.3 628.3 84.2 2000 0.2 297 3.3 630.0 79.5 3150 0.45 313 3.3 630.9 75.3 2010 0.15 323 3.3 632.5 73.7 9090 1.4E-5 334 3.3 634.9 62.1 9920 0.012 343 3.3 640.0 7.6 5000 0.01 353 Supplementary Table II: Table of fit parameters shown in Figure 3c of main text. 4

SUPPLEMENTARY NOTE 1. ADDITIONAL TEMPERATURE DEPENDENCE DATA FOR CRYSTAL #30 Here we present additional data on temperature dependence of microcrystal #30 regarding Figure 3c of the main text. Raman spectra are shown in Supplementary Figure 1a,b for heating and cooling cycles, respectively. Metallic domains appear at 348 K and the microcrystal is fully metallic above 385 K. Additionally, we observe the evolution of the insulating phase through the T phase with increasing temperature and the remaining insulating stripes transition to M2 at 363 K. This is indicated by the shift in the ω V O peak position displayed in Supplementary Figure 1c. A 10 K hysteresis in the peak position is observed for the T-M2 transition. Supplementary Table 2 correlates the extracted ω V O peak position with the ultrafast dynamics. SUPPLEMENTARY NOTE 2. FURTHER s-snom IMAGING Here we provide further nanoscale images showing the irreproducible break up pattern of metallic puddles upon cooling through the thermal transition. Supplementary Figure 2 shows several thin metallic domain patterns during two repeated cooling cycles imaged with s-snom. Images taken at the same temperature are stacked vertically. The domains on the left break at roughly the same location at T = 344.0 K, but they show different domain patterns upon cooling to T = 343.2 K, as highlighted in the red circles. Since the domain patterns begin at 347.2 K and end at 342.8 K in qualitatively the same spatial arrangement, the different intermediate behavior cannot be explained by hysteresis effects. The large difference in the repeated scans at 343.2 K also cannot arise due to uncertainties in the temperature. Additionally, these metastable nanoscale metallic domains are observed to relax to a completely insulating state over temperature steps as small as T = 0.1 K, indicating their dynamic nature. The irreproducibility illustrate the highly dynamical state of the microcrystals near the critical temperature T C which is extremely sensitive to spatial variations in the chemical potential and perturbations in the electronic structure. This highly dynamical state is in part a result of the free energy degeneracy of the rutile metallic and the two monoclinic insulating structures at T C [1]. As the crystal is cooled from T C, the degeneracy is broken 5

and free energies begin to deviate, favoring the insulating phases. The insulating areas that first nucleate are observed to be in the M2 phase [2] due to the substrate-induced strain, which is predicted to have a structural free energy contribution closer to the rutile structure H M1!R > H M2!R [3] and is therefore more sensitive to fine spatial variations in the free energy landscape. SUPPLEMENTARY REFERENCES SUPPLEMENTARY REFERENCES [1] Park, J. H. et al. Measurement of a solid-state triple point at the metal-insulator transition in VO 2. Nature 500, 431 434 (2013). [2] Jones, A. C., Berweger, S., Wei, J., Cobden, D. & Raschke, M. B. Nano-optical investigations of the metal-insulator phase behavior of individual VO 2 microcrystals. Nano Lett. 10, 1574 1581 (2010). [3] Pouget, J. P. et al. Dimerization of a linear Heisenberg chain in the insulating phases of V 1 x Cr x O 2. Phys. Rev. B 10, 1801 (1974). 6