Ceramic - Chemical Resistance Acids - concentrated Acids - dilute Alkalis Halogens Metals

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Ceramic - Chemical Resistance Acids - concentrated Acids - dilute Alkalis Halogens Metals Fair Good Poor-Fair - Good 62/SiO2 24/B2O3 14 Fair Good Poor-Fair - - 70/SiO2 28/B2O3 2 Good Good Good Good Good Alumino-silicate Glass Fair Good Good - - SiO 2 57/Al 2 O3 36/CaO/MgO/ BaO - Fair Poor - - Machinable Aluminum Nitride Poor Fair Fair - Good AlN Beryllia Poor Fair Fair Fair Good BeO 99.5 Boron Carbide - Hot-pressed Fair Good Fair Fair Fair Boron Nitride Fair Fair Fair Poor Good BN Leachable Ceramic Fair Fair Poor Fair Good SiO 2 50/ZrSiO 4 40/Al2O3 10 Magnesium Oxide - - - - Good MgO Potassium Aluminosilicate Fair Good Good - - Muscovite Mica Quartz - Fused Good Good Fair Good Fair SiO 2 Ruby Good Good Good Good Good /Cr2O3 /Si2O3 Sapphire Good Good Good Good Good 99.9 Silicon Carbide - Hotpressed Good Good Good-Poor Good-Poor Fair Silicon Carbide - Reaction Good Good Fair Fair Fair Silicon Nitride - Hot-pressed Fair Good Good-Poor Good Fair 1

Ceramic - Chemical Resistance Acids - concentrated Acids - dilute Alkalis Halogens Metals Silicon Nitride - Reaction Fair Good Fair Good Fair Silicon Nitride/Aluminum Good Good Fair - - Nitride/Aluminum Oxide Sialon Titanium Diboride Fair Good Fair Good Good TiB 2 Titanium Dioxide Fair Good Poor - Poor TiO 2 99.6% Vycor 1 7913 Good Good Fair Good Fair SiO 2 96 Zirconia - stabilized with Magnesia ZrO 2 /MgO Fair Good Good-Poor Fair Good-Fair 2

Dielectric constant Ceramic - Electrical Properties Dielectric strength kv mm -1 Volume resistivity Ohmcm >10 14 @25C 5.2 @ 9.4GHz - - 62/SiO2 24/B2O3 14 5.7 @ 9.4GHz - - 70/SiO2 28/B2O3 2 9.0-10.1 10-35 7.3 40 1.8 x 10 13 @25C Machinable 7.1 - - Machinable (BNP-2) - - - Aluminum Nitride 9.2 35 >10 13 @25C AlN Beryllia BeO 99.5 6.5-7.5 10-14 >10 14 @25C Boron Carbide - Hot-pressed - - 0.1-10 @25C Boron Nitride BN 4.3 40-200 10 11-10 14 @25C Potassium Aluminosilicate 6.0-6.6 40-200 10 12 @25C Muscovite Mica Quartz - Fused 3.8 25-40 10 18 @25C SiO 2 Ruby 7.5-11.5 15-50 10 14 @25C /Cr2O3 /Si2O3 Sapphire 7.5-11.5 15-50 >10 14 @25C 99.9 Silicon Carbide - Hotpressed 40-10 3-10 5 @25C Silicon Carbide - Reaction - - 10 2-10 3 @25C Silicon Nitride - Hot-pressed 10-10 12-10 15 @25C Silicon Nitride - Reaction >10 @25C 10-3

Dielectric constant Ceramic - Electrical Properties Dielectric strength kv mm -1 Volume resistivity Ohmcm Silicon Nitride/Aluminum - - 10 12-10 17 @25C Nitride/Aluminum Oxide Sialon Titanium Diboride - - 15x10-6 @25C TiB 2 Titanium Dioxide 80-100 - 10 13-10 18 @25C TiO 2 99.6% Tungsten Carbide/Cobalt WC 94/Co 6 - - 2x10-6 @25C Vycor 1 7913 SiO 2 96 3.8-10 14 @25C 4

Compressive strength MPa Fracture toughness MPam(0.5) Ceramic - Mechanical Properties Hardness - Knoop kgf mm -2 Hardness - Vickers Poisson s ratio Shear strength kgf mm -2 MPa Tensile modulus GPa - - - - - - 140 62/SiO2 24/B2O3 14 - - - - - - 185 70/SiO2 28/B2O3 2 2200-2600 - 2100 1500-1650 - 330 300-400 300-3000 - - - - - - 99.5 1000 - - 560 - - 160 Machinable <1070-3.42-4.91 - - - 34.1 (parallel) Machinable (BNP-2) - - - - - - - Aluminum Nitride - - - 1100-450 - AlN Beryllia 1550-1850 - - 1100-1300 - 180-250 340-400 BeO 99.5 Boron Carbide - Hot-pressed 1400-3400 - 2800-3500 3200 - - 440-470 Boron Carbide 200-300 - - - - - - Boron Nitride 30-120 - - - - 12-25 20-35 BN Potassium Aluminosilicate 190-280 - - 2-3 - 215-265 - Muscovite Mica - - - Mohs - - - Quartz - Fused 1100-820 1000-70 72-74 SiO 2 Ruby 2100-2000 2500-3000 - - 350-390 /Cr2O3 /Si2O3 Sapphire 2100-2000 1600-1800 - - 350-390 99.9 Silicon Carbide - Hotpressed 1000-1700 - - 2400-2800 - 210-380 200-500 Silicon Carbide - Reaction 2000-3500 - - 2500-3500 - - 410 Silicon Carbide - - - 2500 - - - 5

Compressive strength MPa Fracture toughness MPam(0.5) Ceramic - Mechanical Properties Hardness - Knoop kgf mm -2 Hardness - Vickers Poisson s ratio Shear strength kgf mm -2 MPa Tensile modulus GPa Silicon Nitride - Gas - 7.0-1450 - - - 3 4 Pressure Sintered Si N - - - - - - - Silicon Nitride - Hot-pressed 2000-3500 - - 1700-2200 - 480-960 280-310 Silicon Nitride - Reaction 550-650 - - 800-1000 - 190-240 170-220 Silicon Nitride/Aluminum >3500 - - 1650-1800 - - 280-300 Nitride/Aluminum Oxide Sialon Titanium Diboride - - - 3000 0.18-0.20 300-600 520-570 TiB 2 Titanium Dioxide 800-1000 - - 980 - - 250-300 TiO 2 99.6% Tungsten Carbide/Cobalt 5300-7000 - - 1550 - - 600 WC 94/Co 6 Vycor 1 7913 - - - 490 - - 65-75 SiO 2 96 Zirconia - stabilized with 1500-2000 - - 1200-414 200 Magnesia ZrO 2 /MgO Zirconia - stabilized with Yttria ZrO 2 /Y 2 O3 2000 - - 1250 - - 200 6

Apparent porosity % Ceramic - Physical Properties Density Refractive index Useful optical transmission g cm -3 range Water absorption - saturation % 0 2.7 1.57-0 62/SiO2 24/B2O3 14-3.05 1.62 - - 70/SiO2 28/B2O3 2 /Silica - 3.1 - - - 80/SiO2 20 0 3.9 - - 0 0 3.89 - - - 99.5 Alumino-silicate Glass 45 2.65 1.54 - - SiO 2 57/Al 2 O3 36/CaO/MgO/ BaO 0 2.95 - - - Machinable 0 2.90 - - - Machinable (BNP-2) - - - - - Aluminum Nitride - 3.33-500-3000nm 0 AlN Beryllia 0 2.86 - - 0.07 BeO 99.5 Boron Carbide - Hot-pressed <3 2.45-2.52 - - - Boron Carbide - 2.52 - - - Boron Nitride 2-15 1.9-2.2 - - - BN Leachable Ceramic 25 2.1 - - 14 SiO 2 50/ZrSiO 4 40/Al2O3 10 Magnesium Oxide <1% 3.40 - - - MgO Potassium Aluminosilicate - 2.6-3.2 1.5-1.6 450-700nm Very Low Muscovite Mica Quartz - Fused 0 2.2 1.46 180-2500nm 0 SiO 2 Ruby /Cr2O3 /Si2O3 0 3.98-150-5500nm 0 7

Apparent porosity % Ceramic - Physical Properties Density Refractive index Useful optical transmission g cm -3 range Water absorption - saturation % Sapphire 0 3.985 1.71-1.79 200-5500nm 0 99.9 Silicon Carbide - Hotpressed 0 3.15 - - - Silicon Carbide - Reaction 0 3.10 - - - Silicon carbide/silica/ - 0.55 - - - 65/SiO 2 17/Al 2 O3 14 - - - - - Silicon Carbide - 3.2 - - - Silicon Nitride - Gas 0 3.24 - - - Pressure Sintered Si 3 N - - - - - 4 Silicon Nitride - Hot-pressed 0 3.11 - - - Silicon Nitride - Reaction 15-23 2.4 - - - Silicon Nitride/Aluminum 0.01 3.24 - - - Nitride/Aluminum Oxide Sialon Silicon Nitride - 3.44 - - - Superwool 1-0.21 - - - Silica/Calcia/Magnesia - - - - - Titanium Diboride - 4.5 - - - TiB 2 Titanium Dioxide 0 4.05 - - - TiO 2 99.6% Tungsten Carbide/Cobalt - 14.95 - - - WC 94/Co 6 Vycor 1 7913 0 2.18 1.46 365-2500nm 0 SiO 2 96 Yttrium Oxide - 5.03 - - - Y 2 O 3 Zirconia - stabilized with Magnesia ZrO 2 /MgO 0 5.74 - - 0 8

Apparent porosity % Ceramic - Physical Properties Density Refractive index Useful optical transmission g cm -3 range Water absorption - saturation % Zirconia - stabilized with Yttria ZrO 2 /Y 2 O3 Zirconia - unstabilized ZrO 2 99-5.9 - - - - 6.1 - - - 9

Ceramic - Thermal Properties Coefficient of thermal expansion x10-6 K -1 Melting point C Specific heat J K -1 kg -1 Sublimation point C Thermal conductivity W m -1 K -1 Upper continuous use temperature C 3 @20-1000C - 1100 @25C 1800-1200-1400 62/SiO2 24/B2O3 14 5 @20-1000C - 1000 @500C 1800-1350-1650 70/SiO2 28/B2O3 2 /Silica - - - - - 1600 80/SiO2 20 8.0 @20-1000C 2100 850-900 @25C - 26-35 @20C 1700 8.3 @20-1000C - 850 @25C - 26.0 @20C 1800 99.5 Alumino-silicate Glass 5 @20-1000C - - - - 900 SiO 2 57/Al 2 O3 36/CaO/MgO/ BaO 5.2 @20-1000C - - - 100 @20C 1000-1900 Machinable 0.57 parallel - - - 92.6 1020 (oxidising) Machinable (BNP-2) - - - - - - Aluminum Nitride 4.4 @20-1000C 2200 800 @25C 2500 175-190 @20C 1000-1800 AlN Beryllia 8.4-9.0 @20-1000C - 1020-1120 @25C - 260-300 @20C 1800-1900 BeO 99.5 Boron Carbide - Hot-pressed 5.6 @20-1000C 2450 950 @25C - 30-90 @20C 600-800 Boron Carbide - 2450 - - - 600-800 Boron Nitride 1.0-36 @20-1000C - 800-2000 @25C 2600-2800 15-50 @20C 950-2500 BN Leachable Ceramic 1.98 @20-1000C - - - - 1050 SiO 2 50/ZrSiO 4 40/Al2O3 10 Magnesium Oxide - - - - - 2200 MgO Potassium Aluminosilicate 9-36 @20-1000C - 50 @25C - 0.5-7 @20C 500-600 Muscovite Mica Quartz - Fused 0.54 @20-1000C 1715 670-740 @25C - 1.46 @20C 1100-1400 SiO 2 Ruby /Cr2O3 /Si2O3 5.8 @20-1000C 2050 750 @25C - 35-40 @20C 1800-1950 10

Ceramic - Thermal Properties Coefficient of thermal expansion x10-6 K -1 Melting point C Specific heat J K -1 kg -1 Sublimation point C Thermal conductivity W m -1 K -1 Upper continuous use temperature C Sapphire 5.8 @20-1000C 2050 750 @25C - 35-40 @20C 1800-1950 99.9 Silicon Carbide - Hotpressed 4.5 @20-1000C 2650-2950 670-710 @25C - 90-160 @20C 1500-1650 Silicon Carbide - Reaction 4.3-4.6 @20-1000C - 1100 @25C - 150-200 @20C 1350 Silicon Carbide - 2650-2950 - - - - Silicon Nitride - Gas RT-1000 - - - 25 - Pressure Sintered Si 3 N 3.6 - - - 22-4 - - - - - - Silicon Nitride - Hot-pressed 3.3 @20-1000C - 680-800 @25C 1900 15-43 @20C 1100-1650 Silicon Nitride - Reaction 3.3 @20-1000C - 690 @25C - 10-16 @20C 1200-1500 Silicon Nitride/Aluminum 3.3-3.7 @20-1000C - 620-710 @25C - 20 @20C 1000 Nitride/Aluminum Oxide Sialon Silicon Nitride - - - 1900 - - Titanium Diboride 6-7 @20-1000C 3000 - - 50-70 @20C 1000-2000 TiB 2 Titanium Dioxide 8-10 @20-1000C 1850 - - 2.5-5.0 @20C - TiO 2 99.6% Tungsten Carbide/Cobalt 4.6-5.0 @20-1000C - 200-480 @25C - 60-80 @20C - WC 94/Co 6 Vycor 1 7913 0.5-0.75 @20-1000C 1715 750 @25C - 1.2-1.4 @20C 900-1200 SiO 2 96 Yttrium Oxide 8.1 @20-1000C 2400 - - 8-12 @20C - Y 2 O 3 Zirconia - stabilized with 5-10 @20-1000C - 400-500 @25C - 1.5-2.5 @20C 1000 Magnesia ZrO 2 /MgO Zirconia - stabilized with 10 @20-1000C 2700 400-500 @25C - 2.5 @20C 2200 Yttria ZrO 2 /Y 2 O3 Zirconia - unstabilized ZrO 2 99-2650 - - - 2200 11

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