Shingled Cell Interconnection: Aiming for a New Generation of Bifacial PV-Modules

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Shingled Cell Interconnection: Aiming for a New Generation of Bifacial PV-Modules ECA Ag-Finger N. Klasen, A. Mondon, A. Kraft, U. Eitner Fraunhofer Institute for Solar Energy Systems ISE Al-Metallization Ag-Pad 7 th Workshop on Metallization and Interconnection Konstanz, 24.10.2017 www.ise.fraunhofer.de

Interconnection Technologies Conventional: ribbon 6 solar cells Solder coated Cu-interconnectors Up to 6 ribbons / cell 2

Interconnection Technologies Conventional: ribbon 6 solar cells Solder coated Cu-interconnectors Up to 6 ribbons / cell Shingle interconnection [1] Overlapping solar cell stripes ~ 1/6 of 6 wafer Joint material (ECA / solder) 2 [1] Donald C. Jr., Dickson (1960): Photovoltaic semiconductor apparartus or the like. Registered by Hoffmann Electronics Corp. Patentnr.: US 2938938 A.

Shingle Interconnection Advantages Shingle interconnection advantages No ribbon shading Reduced cell spacing No interconnector losses Reduced string current Cell Shading Conventional interconnection Cell Cell Shading Shingle approach 3

Shingle Interconnection Advantages Shingle interconnection advantages No ribbon shading Reduced cell spacing No interconnector losses Reduced string current Cell Shading Conventional interconnection Decreasing current significantly reduces ohmic losses I ph A 2 P loss I ph Cell Cell Shading Shingle approach 3

Conventional PV Module SmartCalc.CTM www.cell-to-module.com Loss simulation via Cell-to-Module (CTM) analysis [2] Focus on two major features Interconnection Cell Spacing 4 [2] Haedrich, Ingrid et al (2014): Unified methodology for determining CTM ratios. Systematic prediction of module power. In: Solar Energy Materials and Solar Cells 131

CTM Efficiency Analysis [3] SmartCalc.CTM www.cell-to-module.com 5 [3] Mittag, Max et al (2017): Cell-to-Module (CTM) analysis for photovoltaic modules with shingled solar cells. presented at the 44th IEEE PVSC, Washington, D.C.

21.58 % 21.58 % 20.17 % 18.31 % CTM Efficiency Analysis [3] SmartCalc.CTM www.cell-to-module.com Ribbon Interconnection Shingle Interconnection 5 [3] Mittag, Max et al (2017): Cell-to-Module (CTM) analysis for photovoltaic modules with shingled solar cells. presented at the 44th IEEE PVSC, Washington, D.C.

21.58 % 21.58 % 20.17 % 18.31 % CTM Efficiency Analysis [3] SmartCalc.CTM www.cell-to-module.com Ribbon Interconnection Shingle Interconnection 5 [3] Mittag, Max et al (2017): Cell-to-Module (CTM) analysis for photovoltaic modules with shingled solar cells. presented at the 44th IEEE PVSC, Washington, D.C.

21.58 % 21.58 % 20.17 % 18.31 % CTM Efficiency Analysis [3] SmartCalc.CTM www.cell-to-module.com Ribbon Interconnection Shingle Interconnection 5 [3] Mittag, Max et al (2017): Cell-to-Module (CTM) analysis for photovoltaic modules with shingled solar cells. presented at the 44th IEEE PVSC, Washington, D.C.

Features Shingle Module SmartCalc.CTM www.cell-to-module.com High aesthetics for building integration Shingle solar cell Transparent backsheet for bifacial solar cell integration Lead-free solders or ECAs as joint material Very high module power densities aiming for: 400 W @ 1,6 m² or 240 W/m² Combined cell & module development at Fraunhofer ISE 6

Process from Cell to Module Bifacial p-speer [4] solar cell. 148x23 mm² Aim η = 22.1 % Bifacial p-type PERC Singulation & edge passivation Shingled Passivated Edge Emitter and Rear Solar Cell Cell development 7 [4] Baliozant et al. (submitted). Bifacial p-type silicon shingle solar cells - the pspeer concept.

Process from Cell to Module Bifacial p-speer [4] solar cell. 148x23 mm² Aim η = 22.1 % Bifacial p-type PERC Singulation & edge passivation Shingled Passivated Edge Emitter and Rear Solar Cell Cell development Module development Aim P = 240 W m² Interconnection Module integration Reliability 7 [4] Baliozant et al. (submitted). Bifacial p-type silicon shingle solar cells - the pspeer concept.

Process from Cell to Module Bifacial p-speer [4] solar cell. 148x23 mm² Aim η = 22.1 % Bifacial p-type PERC Singulation & edge passivation Shingled Passivated Edge Emitter and Rear Solar Cell Cell development Module development Aim P = 240 W m² Interconnection Module integration Reliability 7 [4] Baliozant et al. (submitted). Bifacial p-type silicon shingle solar cells - the pspeer concept.

Challenge: Shingle Joint Different Coefficients of Thermal Expansion (CTE) Joint has to compensate relative cell movement Glass ~ 8,5 10-6 1/K Joint EVA ~ 270 10-6 1/K Backsheet ~ 50 10-6 1/K 3-4 mm ~1.5 mm 8

Challenge: Shingle Joint Different Coefficients of Thermal Expansion (CTE) Joint has to compensate relative cell movement Glass ~ 8,5 10-6 1/K Joint EVA ~ 270 10-6 1/K Backsheet ~ 50 10-6 1/K 3-4 mm ~1.5 mm Recent Investigation suggest: Solder is too stiff ECAs currently in use Soldering (SnPb)[8] Soldering (SnBi)[6,7] Glueing (Epoxy)[8] T process [ C] > 200 160 150-180 G [MPa] 11,000 14,000 36,000 38,000 200 2,000 str [MPa] 23 48 28 5 10 G / str [-] 230 600 1280 1350 20 400 8 [6] Shen et al. (2013): Nanoindentation study on the creep resistance of SnBi solder alloy with reactive nano-metallic fillers. In: Materials Science and Engineering: A 561. [7] Liu et al. (2010): Effect of Y2O3 particles on microstructure formation and shear properties of Sn-58Bi solder. In: J Mater Sci: Mater Electron 21 (10). [8] Beaucarne, Guy (2016): Materials Challenge for Shingled Cells Interconnection. In: Energy Procedia 98

Challenge: Shingle Joint Different Coefficients of Thermal Expansion (CTE) Joint has to compensate relative cell movement Glass ~ 8,5 10-6 1/K Joint EVA ~ 270 10-6 1/K Backsheet ~ 50 10-6 1/K 3-4 mm ~1.5 mm Recent Investigation suggest: Solder is too stiff ECAs currently in use Soldering (SnPb)[8] Soldering (SnBi)[6,7] Glueing (Epoxy)[8] T process [ C] > 200 160 150-180 G [MPa] 11,000 14,000 36,000 38,000 200 2,000 str [MPa] 23 48 28 5 10 G / str [-] 230 600 1280 1350 20 400 [8] 8 [6] Shen et al. (2013): Nanoindentation study on the creep resistance of SnBi solder alloy with reactive nano-metallic fillers. In: Materials Science and Engineering: A 561. [7] Liu et al. (2010): Effect of Y2O3 particles on microstructure formation and shear properties of Sn-58Bi solder. In: J Mater Sci: Mater Electron 21 (10). [8] Beaucarne, Guy (2016): Materials Challenge for Shingled Cells Interconnection. In: Energy Procedia 98

Module Integration Process Joint material application ECA or solder Camera-based correction of cell position Pick and place routine UR5 robot manipulator Epoxy - ECA Sn42Bi58 Layup Glass, EVA, ETFE Backsheet Slimline process Combined lamination / interconnection Vacuum picker Infrared radiator 9

Module Integration Process Joint material application ECA or solder Camera-based correction of cell position Pick and place routine UR5 robot manipulator Epoxy - ECA Sn42Bi58 Layup Glass, EVA, ETFE Backsheet Slimline process Combined lamination / interconnection I-V Characterization & EL-Imaging a-tc200 8 K/min, - 45 to 85 C,15 min dwell I-V Characterization & EL-Imaging Vacuum picker Infrared radiator 9

Module Integration Process Joint material application ECA or solder Pick and place routine UR5 robot manipulator Epoxy - ECA Sn42Bi58 Layup Glass, EVA, ETFE Backsheet Slimline process Combined lamination / interconnection I-V Characterization & EL-Imaging a-tc200 8 K/min, - 45 to 85 C,15 min dwell I-V Characterization & EL-Imaging 9

Interconnecting the Rear Side Little space for metallization in the overlap Aim for overlap 2 mm 2 mm Al 10

Interconnecting the Rear Side Little space for metallization in the overlap Aim for overlap 2 mm Al / Ag rear-metallization Contact passivation (Al) Interconnection (Ag) 2 mm Al 10

Interconnecting the Rear Side Little space for metallization in the overlap Aim for overlap 2 mm Al / Ag rear-metallization Contact passivation (Al) Interconnection (Ag) Rear side p-speer SiN x Al Aluminum challenging for soldering Ag Al Ag Rear side busbar 10

Interconnecting the Rear Side Convocal microscopy indicates two different regions B B B B A B A B Rear side busbar of a p-speer cell 11

Interconnecting the Rear Side X-Ray transmission images Solder experiments show similar structures Overlap of two soldered p-speer Cells 12

Interconnecting the Rear Side X-Ray transmission images Solder experiments show similar structures B B B B A B A B Overlap of two soldered p-speer Cells Dewetting of solder indicates Al 12

Interconnecting the Rear Side EDX-Mapping Ag/Al Depth: ~ 160 nm 13

Interconnecting the Rear Side Al Ag Diffusion during Co-Firing Formation of stable Al x Ag y - Phase (B) [9] B B B B B B Further development of rear side metallization needed Reduction of area covered by phase B 14 [9] Baker, Hugh (2016): Alloy Phase Diagrams. ASM Handbook. 3. Aufl.: ASM International.

Current I [A] Module Results I-V Characterization 1,5 Slight decrease in FF SnBi solder passes a-tc200 in shingle interconnection 1,0 0,5 Initial TC200 0,0-0,5-0,5 0,0 0,5 1,0 1,5 2,0 2,5 Voltage V [V] 15

Current I [A] Module Results I-V Characterization 1,5 Slight decrease in FF SnBi solder passes a-tc200 in shingle interconnection 1,0 0,5 Initial TC200 0,0-0,5-0,5 0,0 0,5 1,0 1,5 2,0 2,5 Voltage V [V] < 5% power decay after 200 cycles Initial a-tc200 I SC [ma] 1175 1178 100.2 % V OC [mv] 1934 1922 99.4 % FF [%] 77.0 74.1 96.2 % P MPP [mw] 1750 1677 95.8 % 15

Module Results EL Imaging Homogeneous current distribution indicates good interconnection Initial TC75 TC200 16 [10] Schmid, Cordula V. (2010): Schadensmechanismen bei Silizium-Solarzellen und Maßnahmen zur Festigkeitserhöhung. Fakultät für Maschinenbau, Karlsruher Institut für Technologie (KIT), Karlsruhe

Module Results EL Imaging Homogeneous current distribution indicates good interconnection Initial Crack formation after 75 cycles close to rear side metallization [10] a-tc75 TC200 16 [10] Schmid, Cordula V. (2010): Schadensmechanismen bei Silizium-Solarzellen und Maßnahmen zur Festigkeitserhöhung. Fakultät für Maschinenbau, Karlsruher Institut für Technologie (KIT), Karlsruhe

Module Results EL Imaging Homogeneous current distribution indicates good interconnection Initial Crack formation after 75 cycles close to rear side metallization [10] a-tc75 Slight decrease in interconnection quality after a-tc200 a-tc200 16 [10] Schmid, Cordula V. (2010): Schadensmechanismen bei Silizium-Solarzellen und Maßnahmen zur Festigkeitserhöhung. Fakultät für Maschinenbau, Karlsruher Institut für Technologie (KIT), Karlsruhe

Summary & Outlook CTM analysis shows 2 % efficiency gain compared to conventional interconnection Combined lamination & interconnection process < 5 % power loss after a-tc200 for shingled bifacial SPEER cells soldered with SnBi 17

Summary & Outlook CTM analysis shows 2 % efficiency gain compared to conventional interconnection Combined lamination & interconnection process < 5 % power loss after a-tc200 for shingled bifacial SPEER cells soldered with SnBi Detailed research on solder and ECA joint materials Further reliability testing and FEM simulations on shingle interconnection 17

Thank you for your attention Fraunhofer-Institute for Solar Energy Systems ISE Nils Klasen www.ise.fraunhofer.de www.moduletec.de nils.klasen@ise.fraunhofer.de This work has been supported by the Federal Ministry for Economic Affairs and Energy under the contract number 0324125, acronym PV-BAT400. 18