4V Drive Nch+Nch MOSFET

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4V Drive Nch+Nch MOSFET EC-Q Qualified Sucture Silicon N-channel MOSFET Dimensions (Unit : mm) SOP8 Features ) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small surface Mount Package (SOP8). pplication Switching Each lead has same dimensions Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) (8) (7) (6) (5) Type Code TB Basic ordering unit (pieces) 2500 2 2 () (2) (3) (4) () (2) (3) (4) ESD PROTECTION DIODE 2 BODY DIODE () Tr Source (2) Tr Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr Drain (8) Tr Drain protection diode is included between the gate and the source terminals to protect the diode against static elecicity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. bsolute maximum ratings () <It is the same ratings for the Tr and Tr2.> Parameter Symbol Limits Unit Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Continuous Total power dissipation Channel temperature Range of storage temperature VDSS S ID IDP IS ISP PD Tch Tstg 2 60 ±20 ±5.0 ±20.0 20 2.0 50 55 to +50 V V W/TOTL C C Pw µs, Duty cycle % 2 Mounted on a ceramic board. /4

Elecical characteristics () <It is the same characteristics for the Tr and Tr2.> Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward ansfer admittance Input capacitance Output capacitance Reverse ansfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Symbol IGSS V(BR) DSS IDSS (th) RDS (on) Yfs Ciss Coss Crss td (on) td (off) tf Qg Qgs Qgd Min. Typ. Max. Unit Conditions ± µ =±20V, VDS=0V 60 V ID=m, =0V µ VDS=60V, =0V.0 2.5 V VDS=V, ID=m 34 48 ID=5.0, =V 38 54 mω ID=5.0, =4.5V 40 56 ID=5.0, =4.0V 5.0 S ID=5.0, VDS=V 620 pf VDS=V 45 pf =0V 70 pf f=mhz 2 ns ID=2.5, VDD 30V 20 ns =V 40 ns RL=2Ω 20 ns RG =Ω 8.0 2 nc ID=5.0, VDD 30V 2.0 nc =5V 2.6 nc RL=6Ω, RG =Ω Body diode characteristics (Source-drain) () <It is the same characteristics for the Tr and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD.2 V IS=5.0, =0V 2/4

Elecical characteristic curves 0. Ta=25 C VDS=V 0.0 0.5.0.5 2.0 2.5 3.0 GTE-SOURCE VOLTGE : (V) Fig. Typical Transfer Characteristics 00 0 =4.0V =4.5V =V 0.0 0. Fig.2 Static Drain-Source vs. Drain Current( ) 00 0 Ta=25 C =V 0.0 0. Fig.3 Static Drain-Source vs. Drain Current( ΙΙ ) 00 0 Ta=25 C =4.5V 0.0 0. Fig.4 Static Drain-Source vs. Drain Current(ΙΙΙ) 00 0 Ta=25 C =4V 0.0 0. Fig.5 Static Drain-Source vs. Drain Current(Ι ) 200 0 ID=5 ID=2.5 0 0 5 5 GTE-SOURCE VOLTGE : (V) Fig.6 Static Drain-Source vs. Gate-Source Voltage CPCITNCE : C (pf) 000 00 0 f=mhz =0V Ciss Coss Crss 0. 0 DRIN-SOURCE VOLTGE : VDS (V) SWITCHING TIME : t (ns) 000 00 0 tf td (off) td (on) VDD=30V =V RG=Ω 0.0 0. GTE-SOURCE VOLTGE : (V) 9 8 7 6 5 4 3 2 VDD=30V ID=5.0 RG=Ω 0 0 2 4 6 8 2 4 TOTL GTE CHRGE : Qg (nc) Fig.7 Typical Capacitance vs. Drain-Source Voltage Fig.8 Switching Characteristics Fig.9 Dynamic Input Characteristics 3/4

SOURCE CURRENT : IS () 0. Ta=25 C =0V 0.0 0.0 0.5.0.5 SOURCE-DRIN VOLTGE : VSD (V) Fig. Source Current vs. Source-Drain Voltage Measurement circuit Pulse Width ID RL VDS 50% % 90% 50% RG D.U.T. VDS % % VDD 90% 90% td(on) td(off) ton toff Fig. Switching Time Test Circuit Fig.2 Switching Time Waveforms VG ID VDS Qg IG (Const.) RG D.U.T. RL Qgs Qgd VDD Charge Fig.3 Gate Charge Test Circuit Fig.4 Gate Charge Waveform 4/4

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