SST2222A V CEO I C. 40V 600mA. Datasheet. NPN Medium Power Transistor (Switching) lfeatures 1)BV CEO >40V(I C =10mA) 2)Complements the SST2907A

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Transcription:

SST2222A NPN Medium Power Transistor (Switching) Datasheet Parameter V CEO I C Value 40V 600mA loutline SOT-23 SST3 lfeatures 1)BV CEO >40V(I C =10mA) 2)Complements the SST2907A linner circuit lapplication AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER lpackaging specifications Part No. Package Package size Taping code Reel size (mm) Tape width (mm) Basic ordering unit.(pcs) Marking SST2222A SOT-23 (SST3) 2924 T116 180 8 3000 R1P labsolute maximum ratings (T a = 25 C) Parameter Symbol Values Unit Collector-base voltage V CBO 75 V Collector-emitter voltage V CEO 40 V Emitter-base voltage V EBO 6 V Collector current I C 600 ma Power dissipation P *1 D 200 mw Junction temperature T j 150 Range of storage temperature T stg -55 to +150 2016 ROHM Co., Ltd. All rights reserved. 1/6 20160610 - Rev.002

lelectrical characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Collector-base breakdown voltage BV CBO I C = 10μA 75 - - V Collector-emitter breakdown voltage BV CEO I C = 10mA 40 - - V Emitter-base breakdown voltage BV EBO I E = 10μA 6 - - V Collector cut-off current I CBO V CB = 60V - - 100 na Emitter cut-off current I EBO V EB = 3V - - 100 na Collector-emitter saturation voltage Base-emitter saturation voltage Unit V CE(sat) 1 I C = 150mA, I B = 15mA - - 300 mv V CE(sat) 2 *2 I C = 500mA, I B = 50mA - - 1.0 V V BE(sat) 1 I C = 150mA, I B = 15mA 0.6-1.2 V V BE(sat) 2 *2 I C = 500mA, I B = 50mA - - 2.0 V h FE 1 V CE = 10V, I C = 100μA 35 - - - h FE 2 V CE = 10V, I C = 1mA 50 - - - DC current gain h FE 3 V CE = 10V, I C = 10mA 75 - - - h FE 4 V CE = 1V, I C = 150mA 50 - - - Transition frequency f T *2 V CE = 20V, I E = -20mA f = 100MHz Output capacitance C ob V CB = 10V, I E = 0A f = 100kHz Input capacitance C ib V BE = 500mV f = 100kHz h FE 5 *2 V CE = 10V, I C = 150mA 100-300 - h FE 6 *2 V CE = 10V, I C = 500mA 40 - - - 300 - - MHz - - 8 pf - - 25 pf Delay time t V d CC 30V, I C = 150mA - - 10 ns I B1 = 15mA, R L = 200Ω V BE(off) = -500mV Rise time t r See test circuit - - 25 ns V Storage time t CC 30V stg I C = 150mA I B1 = 15mA - - 225 ns Fall time t f I B2 = -15mA, R L = 200Ω See test circuit - - 60 ns *1 Each terminal mounted on a reference land. *2 Pulsed 2016 ROHM Co., Ltd. All rights reserved. 2/6 20160610 - Rev.002

lelectrical characteristic curves(t a = 25 C) Fig.1 Ground Emitter Propagation Characteristics Fig.2 Typical Output Characteristics Fig.3 DC Current Gain vs. Collector Current (I) Fig.4 DC Current Gain vs. Collector Current (II) 2015 ROHM Co., Ltd. All rights reserved. 3/6 20160610 - Rev.002

lelectrical characteristic curves(t a = 25 C) Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current (I) Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current (II) Fig.7 Base-Emitter Saturation Voltage vs. Collector Current Fig.8 Gain Bandwidth Product vs. Emitter Current 2016 ROHM Co., Ltd. All rights reserved. 4/6 20160610 - Rev.002

lelectrical characteristic curves(t a = 25 C) Fig.9 Emitter Input Capacitance vs. Emitter-Base Voltage Collector Output Capacitance vs. Collector-Base Voltage Fig.10 Safe Operating Area SWITCHING TIME TEST CIRCUIT 2016 ROHM Co., Ltd. All rights reserved. 5/6 20160610 - Rev.002

ldimensions 2016 ROHM Co., Ltd. All rights reserved. 6/6 20160610 - Rev.002

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