CAEE H3002: IC Layout and Design

Similar documents
FACC H3005: International Fin Reporting 4

VLSI Systems and Computer Architecture Lab

CMOS FABRICATION. n WELL PROCESS

Cost of Integrated Circuits

Ajay Kumar Gautam [VLSI TECHNOLOGY] VLSI Technology for 3RD Year ECE/EEE Uttarakhand Technical University

Lecture 030 Integrated Circuit Technology - I (5/8/03) Page 030-1

Layout-related stress effects on TID-induced leakage current

National Semiconductor LM2672 Simple Switcher Voltage Regulator

VLSI Technology Dr. Nandita Dasgupta Department of Electrical Engineering Indian Institute of Technology, Madras

EE525/PHY532 Photovoltaic Devices

Manufacturer Part Number. Module 2: CMOS FEOL Analysis

VLSI Technology. By: Ajay Kumar Gautam

EE40 Lec 22. IC Fabrication Technology. Prof. Nathan Cheung 11/19/2009

Step-response of an RC Wire as a Function of Time and Space (Fig. 4-15, p. 157)

Figure 16.31: Two-dimensional representations of (a) a quartz crystal and (b) a quartz glass.

Isolation Technology. Dr. Lynn Fuller

IC Validator. Overview. High-performance DRC/LVS physical verification substantially reduces time-to-results. Benefits. synopsys.

CMOS Manufacturing Process

Dallas Semicoductor DS80C320 Microcontroller

Lecture 19 Microfabrication 4/1/03 Prof. Andy Neureuther

EFV - Photovoltaic Devices

Rockwell R RF to IF Down Converter

Historical Development. Babbage s second computer. Before the digital age

Radiation Tolerant Isolation Technology

Infineon CooliR²Die Power Module

Increased Efficiency and Improved Reliability in ORing functions using Trench Schottky Technology

Motorola PC603R Microprocessor

Lezioni di Tecnologie e Materiali per l Elettronica

Allocation of Marks (Within the Module) Project Practical Final Examination 20% 80% 100%

Today s agenda (19-JAN-2010)

Fabrication Technology

Frontend flow. Backend flow

How To Write A Flowchart

mcube MC3635: The Smallest MEMS Accelerometer for Wearables

Figure 2.3 (cont., p. 60) (e) Block diagram of Pentium 4 processor with 42 million transistors (2000). [Courtesy Intel Corporation.

Advanced CMOS Process Technology Part 3 Dr. Lynn Fuller

WITH THE advance of CMOS processes, integrated circuits. Investigation on Board-Level CDM ESD Issue in IC Products

ION-IMPLANTED PHOTORESIST STRIPPING USING SUPERCRITICAL CARBON DIOXIDE

KERN COMMUNITY COLLEGE DISTRICT - BAKERSFIELD COLLEGE PSYC B100 COURSE OUTLINE OF RECORD

Module Title l c lab p ECTS credits

Process Average Testing (PAT), Statistical Yield Analysis (SYA), and Junction Verification Test (JVT)

Intel Pentium Processor W/MMX

Isolation of elements

Santa Monica College

SGS-Thomson M17C1001 1Mb UVEPROM

Apple iphone 7 Plus: MEMS Microphones from Knowles, STMicroelectronics, and Goertek-Infineon

Bosch BME680 Environmental Sensor with Integrated Gas Sensor

EE 247B/ME 218: Introduction to MEMS Design Lecture 25m2: Sensing Circuit Non-Idealities & Integration CTN 4/21/16

Plasma Etching Rates & Gases Gas ratios affects etch rate & etch ratios to resist/substrate

Robustness and Reliability - Facing new Quality Levels for Automotive ICs with Design for Yield

THE MANUFACTURING PROCESS

CMOS VLSI Design M.Tech. First semester VTU Anil V. Nandi, ECE department, BVBCET, Hubli

Development of a Deep-Submicron CMOS Process for Fabrication of High Performance 0.25 mm Transistors

CMOS Manufacturing process. Circuit designer. Design rule set. Process engineer. Set of optical masks. Fabrication process.

Infineon RASIC: RRN7740 & RTN GHz Radar Dies

R Sensor resistance (Ω) ρ Specific resistivity of bulk Silicon (Ω cm) d Diameter of measuring point (cm)

IC Integrated Manufacturing Outsourcing Solution

Nanofocused X-Ray Beam To Reprogram Secure Circuits

ams Multi-Spectral Sensor in the Apple iphone X

Energy Processing for Smart Grid (4.4)

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 55, NO. 4, AUGUST

TSMC Property. ConFab. Bridging the Fabless-Foundry Gap. BJ Woo. Sr. Director Business Development TSMC TSMC, Ltd

Software Defect Removal Efficiency

1. Introduction. What is implantation? Advantages

Amorphous Oxide Transistor Electrokinetic Reflective Display on Flexible Glass

Metallization. Typical current density ~105 A/cm2 Wires introduce parasitic resistance and capacitance

Reclaimed Silicon Solar Cells

ECET 3801 Fundamentals of Photovoltaic Systems Engineering (3 Semester Hours)

Continental SRL1: State-of-the-art LiDAR for Advanced Driver Assistance Systems

Design Flow Architecture and Statistical Sizing Methods Integration in STMicroelectronics Non Volatile Memory and Automotive Flows.

Electronic Part Obsolescence Forecasting

Tri-Gate Transistor Architecture with High-k Gate Dielectrics, Metal Gates and Strain Engineering

RecruitPlus. Bringing new wave of Automation to Recruitment process. RecruitPlus Resume Parser. ITCONS e Solutions Pvt. Ltd.

CHAPTER 2 - CMOS TECHNOLOGY

EE-612: Lecture 28: Overview of SOI Technology

EE 446/646 Photovoltaic Devices and Systems Course Syllabus

Bosch Mobility Ultrasonic Sensor

Closing the gap between ASIC & Custom

Welding/ Shielded Metal Arc

Advanced RF SiPs for Cell Phones: Reverse Costing Overview

Implant Metrology for Bonded SOI Wafers Using a Surface Photo-Voltage Technique

MOS Devices. James Chingwei Li. at the. January 27, 1999

Connect Plus Access Card For Managerial Accounting By Ronald Hilton

Qualcomm WCD9335 Fan-Out WLP Audio Codec

Nanosilicon single-electron transistors and memory

Packaging Technologies for SiC Power Modules

Toyota Prius 4 PCU Power Modules

Influence of Oxide Layer Thickness and Silicon Carbide (SiC) Polytype on SiC MOS Capacitor Hydrogen Sensor Performance

LIGHTWEIGHT, LIGHT-TRAPPED, THIN GaAs SOLAR CELL FOR SPACECRAFT APPLICATIONS: PROGRESS AND RESULTS UPDATE' ABSTRACT INTRODUCTION

Solar Electric Power Generation - Photovoltaic Energy Systems

LANDOLT-BÖRNSTEIN. Zahlenwerte und Funktionen aus Naturwissenschaften und Technik. Neue Serie. Gesamtherausgabe: K.-H. Hellwege O.

RELIABILITY PREDICTION REPORT

3. Lecturer (s) 4. Division(s) Business School - -

Lighting Applications for Industrial and Commercial Buildings

PROCESSING OF INTEGRATED CIRCUITS

Avalanche Breakdown (Reverse biased PN junction)

Solar Energy Engineering

Semiconductor Manufacturing Technology. IC Fabrication Process Overview

Solar photovoltaic devices

Semiconductor Device Fabrication Study

Transcription:

Short Title: Full Title: IC Layout and APPROVED IC Layout and Module Code: CAEE H3002 Credits: 4 NFQ Level: 7 Field of Study: Electronics and automation Module Delivered in 2 programme(s) Reviewed By: JAMES WRIGHT Module Author: PATRICK O FRIEL Module Description: The objective of this course is to familiarise students with the process of implementing a MOS device using full custom layout and verification techniques. Students will use state-ofthe art CAD tools to design, simulate, and complete mask level layout of a circuit before finally fabricating the device in the college laboratory. Learning Outcomes On successful completion of this module the learner will be able to: LO1 LO2 LO3 LO4 LO5 LO6 LO7 Describe the component technologies in use in the electronics industry. Describe the structure and layout of MOS devices. Create and simulate transistor level designs. and implement MOS devices using custom layout tools, requiring layout, simulation, DRC ( Rule Checking) and LVS ( Layout versus schematic). Describe the basic process steps in the fabrication of MOS devices. Apply their knowledge in a team based design project that involves the verification of silicon layout and fabrication of a semiconductor device in the college laboratory. Present the design project in a formal report. Pre-requisite learning Co-requisite Modules No Co-requisite modules listed

Module Content & Assessment Content (The percentage workload breakdown is inidcative and subject to change) % Target Technologies Overview: Overview of Standard Cell and Full Custom methodologies. Process technologies for NMOS, PMOS and CMOS. Layout: Layout of active, poly and metal layers, laying out of diffusion Wells, Contacts and Vias. Standard Cell frame layout. Floorplan for power and ground. Verification: IC design rules, LVS, DRC and device simulation. Measurement of device propagation delays and output rise and fall times. Power consumption measurement. Laboratory Process Flow: PMOS Process Flow and Layout of a basic semiconductor device such as a Diode or PMOS transistor for fabrication in the college laboratory. Overview of laboratory process and rule. Measurement Evaluation of resistivity and mobility, 4-point probe measurement of resistivity, PN-Junction capacitance, determination of carrier concentration, electric field and depletion layer width with CV measurements. 10.00% 25.00% 20.00% 30.00% 15.00% Assessment Breakdown % Course Work 100.00% Course Work Assessment Type Assessment Description Outcome addressed % of total Assessment Date Continuous Assessment Simulation of MOS transistors. 3,7 15.00 4 Continuous Assessment Lab assessment in layout/simulation. 1,2,3 15.00 6 Continuous Assessment Layout and simulation of device for fabrication. 3,4,7 25.00 8 Continuous Assessment Lab assessment in layout/simulation. 2,3,4 15.00 10 Continuous Assessment Device test and performance 5,6,7 15.00 11 Continuous Assessment Project Report 1,2,3,4,5,6,7 15.00 Sem 1 End No End of Module Formal Examination IT Tallaght reserves the right to alter the nature and timings of assessment

Module Workload Workload: Full Time Workload Type Workload Description Hours Frequency Average ly Learner Workload Lecturer/Lab No Description 4.00 Every Independent Learning No Description 3.00 Every 4.00 3.00 Total ly Learner Workload 7.00 Total ly Contact Hours 4.00 Workload: Part Time Workload Type Workload Description Hours Frequency Average ly Learner Workload Lecturer/Lab No Description 4.00 Every Independent Learning No Description 3.00 Every 4.00 3.00 Total ly Learner Workload 7.00 Total ly Contact Hours 4.00

Module Resources Required Book Resources Dan Clein; technical contributor, Gregg Shimokura 2000, CMOS IC layout, Newnes Boston [ISBN: 0-750671947] Christopher Saint, Judy Saint 2002, IC layout basics, McGraw-Hill New York [ISBN: 0-071386254] This module does not have any article/paper resources This module does not have any other resources

Module Delivered in Programme Code Programme Semester Delivery TA_EAELE_D Bachelor of Engineering in Electronic Engineering 6 Elective TA_EELEC_D Bachelor of Engineering In Electronic Engineering 6 Elective