Imprint Lithography: Getting to the Next Level May 26 SEMECH Litho Forum James E. Ellenson; ; Ken Kramer; im S. Hostetler; Laura King; William M. ong Hewlett-Packard Company 24 Hewlett-Packard Development Company, L.P.
Outline Introduction to nanoimprinting lithography HP s nanoimprinting lithography results Getting to the next level: Key areas and challenges of nanoimprint technology Jim Ellenson 2
Different forms of Nanoimprint Lithography (NIL) Jim Ellenson 3
Molecular Imprints Step and Flash (S-FIL M Process M ) Dispense etch barrier template release treatment transfer layer Imprint UV Cure Expose Residual layer Separate Breakthrough Etch ransfer Etch Courtesy of Grant Willson Jim Ellenson 4
Nanotechnology will provide new applications for nanoimprint lithography Nanotechnology defined defined by by National Nanotech Initiative.. Research and and technology development at at the the atomic, atomic, molecular or or macromolecular levels, levels, in in the the length length scale scale of of approximately -- nanometer range. range. 2. 2. Creating and and using using structures, devices and and systems that that have have novel novel properties and and functions because of of their their small small and/or and/or intermediate size. size. 3. 3. bility bility to to control control or or manipulate on on the the atomic atomic scale. scale. λ drop mux/demux λ add c-ss-dn PD EOM G G G C C C - - - - - - C G G G C C Photonics I I n-sinw Nanowire sensors Jim Ellenson 5
Why Nanoimprint? Very small features transferred into resist 3 nm Lines with a Very Small E-Beam E Stitching Error (in emplate) Replicated From Field to Field Field Field 2 5 nm 4 nm 3 nm Line Width CD Control =.4nm 3 sigma limit of CD-SEM Jim Ellenson 6
Nanoimprinted crossbar molecular switch memory @ 65 nm hp mm μm nm μm Cell density : 6.4 Gbit/cm 2 Y. Chen, G. Jung, et al. Nanoscale molecular-switch crossbar circuits,, Nanotechnology, 4, 462 (23) Jim Ellenson 7
Jim Ellenson 8 HPinvent R ( 6 ohm) H P i n v e n t.e+ 2.E+2 4.E+2 6.E+2 8.E+2.E+3 HP invent Y. Chen, G. Jung, et al. Nanoscale molecular-switch crossbar circuits, Nanotechnology, 4, 462 (23)
Nanoimprint lithography can achieve the same resolution as photolithography. We have not rested on our laurels Sub-5 nm hp resolution achieved Gun-Young Jung, Gwang Ju Univ, Rep. Korea 3 nm Wei Wu Jim Ellenson 9
Example of pplication: Photonic Crystal Nanophotonic Interconnects Corvallis development and manufacturing site got involved Designs, develops and manufactures inkjet cartridges. Investigate various nanoimprint lithography techniques hermal, UV, roll-to-roll Identify key development areas Moletronic mosaics could be: Logic Memory Sensors Integrated MUX/DMUX λ drop PD Moletronic mosaic Moletronic tiles Moletronic mux/demux EOM λ add Photonic Crystal Nanophotonic Interconnects Information capacity independent of length Nanoscale multiplexing: nanophotonic interconnects (massive parallelism) Integrated onto the circuit using nanoimprinting. (Cost effective). Jim Ellenson
Photonic crystal waveguide successfully fabricated by nanoimprint lithography --Jim Ellenson, im Hostetler, Ray Beausoleil, Hewlett Packard Jim Ellenson
Photonic Imprinted Structures using Molecular Imprints Step and Flash (S-FIL M ) Jim Ellenson 2
IRS roadmap 25 Jim Ellenson 3
Getting to the Next Level What are the key areas and challenges to introduce nanoimprint as a Next Generation Lithography. Jim Ellenson 4
Key areas and challenges with nanoimprint Creation of templates emplate cleaning Defects after build (particles), Defect inspection CD & overlay metrology (Image placement) ool adapters for 65mm blank processing emplate fragility emplate patterning emplate is x instead of 4x as in current photomask Need of next generation tools to create higher resolution features. Dense lines @ 3 nm half-pitch Jim Ellenson 5
Key challenges for nanoimprint: Inspection tools will have to be improved Etch Measure CD Wet processing Container 27.2% 4X PSM 24.% X Nanoimprint 29.5% 4X BIM Pellicle Repair Pattern Inspect 4X Mask Blank Write Cost of tools and consumables for process step X Mask Yield for pattern placement Yield for unrepairable defects Relative Mask type mask cost Yield for CD 45nm BIM. 4% 85% 9% 45nm PSM.6 4% 85% 85% 45nm Nanoimprint.92 39% 69% 9% 45nm EUV BIM.69 5% 85% 9% Scott Hector, Freescale Jim Ellenson 6
Commercial emplate Process Route st or Primary write (imprint pattern) 2 nd Level write (mesa) Dicing Prep Resist XÅ hin Cr CrO x Cr Quartz/SiO 2 Å 5Å 6.35 mm 5μm Litho PEB DEV Cr Etch Resist Strip Quartz Etch Coat Litho DEV Cr Strip BOE (Mesa) Resist Strip Coat Dice Resist Strip/Clean Cr Strip Clean Jeff Myron, Molecular Imprints Jim Ellenson 7
U emplate Process Route Resist CrO x Cr Flip Process Quartz/SiO 2 st Level write (mesa) Dicing Prep 2 nd Level write (imprint pattern) XÅ Å 5μm Coat Litho DEV Cr Strip BOE (Mesa) Resist Strip Coat Dice Resist Strip/Clean Litho PEB DEV Cr Etch Resist Strip Quartz Etch Cr Strip Clean Jim Ellenson 8
Key areas and challenges with nanoimprint Material and Process Understand etch bias of imprinted materials CD control of etches Variation across die, wafer Defects induced by etch process. Integration on nanoimprint materials into existing processes. Cost of Ownership Study Study on imprint fluid modeling Defectivity of nanoimprinting Jim Ellenson 9
Conclusions Nanoimprint is a classic disruptive technology Near term market: low cost nanoscale devices Slowly move up the food chain to challenge main stream photolithography Investigations into key areas are needed to understand nanoimprint nt technology capabilities. Colleagues Gun-Young Jung, Wei Wu, Xuema Li, Z. Yu, Z. Li, S.-Y. Wang HP Labs, Palo lto C cknowledgments Scott Hector, Freescale Semiconductor Jeff Myron, Molecular Imprints Jim Ellenson 2
hank you! Jim Ellenson 2