for vapour Aluminum (Al) -, Optical, Oxide, Electrical BN liners with lid are recommended due to the reactivity and the fact that Al creeps out. Cooling down of the cell with 1K per minute. 660 972 Antimony (Sb) 6mm Cold Lip Doping, Electrical 631 425 Arsenic (As) - Cracker, Valved or Effusion Cell III-V, Caps Careful: as molecules -> cracking toxic 817 210 Barium (Ba) -, Beryllium (Be) 4-6mm Vitreous Carbon Bismuth (Bi) - Blei 4-6mm, Quartz,, VC Mo mit Crucible Boron (B) - Vitreous Carbon Cadmium (Cd) -, Quartz, Oxide growth Doping of III-V semiconductors Doping Doping, Carbide Doping in CdTe Wetting, Reactive with ceramics 727 462 extremely hard toxic 1287 997 Toxic, melts before Reactivity with C extremely hard, Careful cooling Toxic, high vapour pressures => system contaminations, low sticking 271 517 327 2076 1707 321 177 Calcium (Ca) 4-6mm - Oxide growth High reactivity 842 459 Carbon (C) 2-4mm - Carbide growth, doping in MBE, electron microscopy sample preparation 3527 2050 Cerium (Ce) - Vitreous Carbon Oxide growth Cesium (Cs) - Near Ambient Quartz, Extremely efficient getter material for N and O high reactivity with O and water 795 1380 28 30
Chlorine (Cl) - - Chromium (Cr) 2-4mm - Cobalt (Co) 2-4mm - Solar cell activation Metalising, contacting Magnetic, multilayer materials, functional oxide Copper (Cu) - Surface Science ECR-Plasma source with Alumina plasma Higher vapour pressure material, deposition rate: up to nm/second for vapour 1907 1157 1495 1257 1085 1027 Dysprosium (Dy) 2-4mm 1407 900 Erbium (Er) 2-4mm, Doping for Tungsten fluorescence 1497 940 Europium (Eu) 4mm, Doping for fluorescence 826 466 Gallium (Ga) - or Single Liquid near RT, Filament III-V growth alloys with refractory,, 30 907 BeO, Quartz Germanium (Ge) -, Quartz Semiconductor, III-V doping 938 1137 Gold (Au) - ( ) Metallising, contacting 1064 1132 Hafnium(Hf) 2mm 270 -e-beam Oxide, low K 2230 3090 Hydrogen (H) - - Indium (In) - with BN liner with cap Contacts (TCO), solar cells, oxide Thermal Gas Cracker TGC-H or ECR or RF Plasma Source Liquid near RT, alloys with refractory 157 742 Iridium (Ir) 2mm - low rates 2466 2380 Iron (Fe) 4mm - Surface science, magnetic, oxide 1538 1180 Lanthanum (La) - 920 1410
Lead (Pb) - Lithium (Li) - Lutetium (Lu) Magnesium (Mg) 4mm 4mm Mo with insert Source,, BeO,, Vitreous Carbon, Intercalation doping, ion Careful degassing, reactivity, LiOH, Li2O, Li2O3 327 for vapour 181 404 1652 1376 Oxide 650 327 Manganese (Mn) 2-4 mm Single Filament Oxide, magnetic 1246 747 Mercury (Hg) - Near Ambient, Quartz, Methane (CH4) - - (Mo) 2mm - Nickel (Ni) 4-6mm Vitreous Carbon Doping, optical active HgCdTe Semiconductor termination in solar cells, oxide Surface science, magnetic, oxide Toxic -39 7? ECR or RF Plasma Source MoO3 toxic 2623 2050? 1455 1262 Niobium (Nb) 3-4mm - 2477 2287 RF Plasma Source Nitridation, Nitride Nitrogen (N) - - with BN plasma film growth Oxygen (O) - - Oxide film growth, cleaning Palladium (Pd) 2-4mm - Surface Science Phosphorus (P) - Platinum (Pt) 2-4mm at low rates (1750 C with 0.01nm per minute) Valved Cracker or Valved Effusion Cell for higher growth rates, BeO Phosphide growth, doping atomic surface preparation ECR Plasma Source with plasma Reacts with refractory 1555 1192 High reactivity 44 192? melting point of Pt at 1768 C, vapour pressure at 10^- 4mbar at 1747 C relative small. Nearly all s materials have higher vapour pressures 1768 1747
Potassium (K) - Source,, Quartz, Doping, intercalation, ion Baking issue, high reactivity for vapour 63 123 Rhenium (Re) 2mm - 3186 2570 Rhodium (Rh) 2mm - 1964 1707 Ruthenium (Ru) 2-4mm 2334 2260 Scandium 2-4mm, BeO 1541 1107 Selenium - Cracker, or Low Temp Effusion Cell, II-VI Toxic, baking issue, contaminates, reacts with Co (gaskets!) 221 154 Silicon (Si) wide (4-6mm) Single Filament Cell, High Cell, Doping, growth, surface science Low rates, careful operation 1414 1337 Silver (Ag) 4-6mm but easier from Sodium (Na) - Strontium (Sr) 4-6mm Source,Quartz, Low EBE,, Vitreous Carbon Intercalation, ion Higher vapour pressure material, deposition rate: up to nm/second Baking issue, high reactivity 962 832 98 193 Oxide growth High reactivity 777 404 Sulphur (S) - Cracker or Valved Effusion Cell, II-VI, sulphurization (Ta) 2mm - Oxide Baking issue contaminates vacuum system, reacts with Copper Refactory material, at 100mm measured deposition rate: ~2nm/min, alloys with Si 115 55 3017 2590
Tellurium (Te) - Thallium (Tl) - Thorium (Th) - Tin (Sn) - Valved Cracker, Quartz, or Single Filament Titanium (Ti) 2-4mm - Tungsten (W) 2mm - II-VI semiconductor, oxide Contacts, TCO, doping Carbide, oxide, Oxide,, electrochemic (WO3) Reacts with Au, wettning, toxic for vapour 450 277 Toxic, wetting 304 470 Toxic, radiactive 1842 1925 Liquid deposition, wetting, strong outgassing Refactory material, at 100mm measured deposition rate: ~2nm/min 232 997 1668 1453 3422 2757 Vanadium (V) 2-4mm Contacts, oxide Molybenum 1910 1547 Ytterbium (Yb) 4mm 824 417 Yttrium (Y) Oxide Reacts with Ta 1526 1332 Zinc (Zn) - Zirconium (Zr) with low rates 2mm possible, Quartz, High EBE, Oxide 420 247 Oxide Strong reactivity alloys with W 1855 1987?