Surface Acoustic Wave fabrication using nanoimprint Zachary J. Davis, Senior Consultant, zjd@teknologisk.dk
Center for Microtechnology & Surface Analysis Micro and Nano Technology Sensor Technology Top Down SERVICES AND PRODUCTS Surface Technology Metrology Bottom Up Zachary Davis, DTI Confidential
Center for Microtechnology & Surface Analysis Micro and Nano Technology Nanoimprint Lithography Physical Vapor Deposition Electron Beam Lithography Femtosecond Laser Excimer Laser CO2 Laser Sensor Technology SAW Sensors Wireless Systems Functional Coatings Antenna Design (cm-nm) System integration Lab-on-Chip SERVICES AND PRODUCTS Surface Technology Molecular Imprinting Organic Synthesis Molecular Vapor Deposition Atomic Layer Deposition PE-CVD Inkjet dispense system Metrology Focused Ion Beam Scanning Electron Microscopy QCM-D Gas Analysis Chamber TOF-SIMS XPS Zachary Davis, DTI Confidential
MICRO / NANO FABRICATION SERVICE DTI owned equipment at Danchip J-FIL Nano Imprint Lithography (Pilot production/low volume production Etchers (metal, DRIE, glass, polymer) Ion beam milling/etching Multi-Process Physical Vapor Deposition (unique) Laser micromachining/wafer dicing 2PP 3D-laser New Electron Beam Lithography just intstalled Next-Generation JEOL E-beam: Top-three World-wide 1350 m 2 class 1-1000 ISO 9001
JET AND FLASH NANOIMPRINT LITHOGRAPHY Supplier Molecular Imprints J-FIL (Jet and Flash Imprint Lithography) The only lithographic method so far to be validated for the 22 nm node by industrial user (Toshiba) Room temparature nanoimprint by UV curing Imprint resist (low voscosity monomers) MonoMat SilMat (~10% Si) Other functional materials commercially available Template In-house fabrication Fused Silica block (65x65 mm2, 6 mm thick)
Imprio 55 Imprio 100 Imprio 300 (industry verified for 22 nm) Imprio 1100 Imprio HD2200 Patterned media NuTera HD7000 Patterned media Perfecta TR1100 Template replicator for Patterned media Zachary Davis, DTI Confidential
Zachary Davis, DTI Confidential
IMPRIO 100 SPECS EBL J-FIL UV stepper Resolution ~10 nm < 30nm 250 nm Stitching < 50 nm < 350 nm 40 nm Wafer size 100 mm 100-200mm 100-200 mm Wafer flatness Simular 2 x CD Simular Active area - 25 x 25 mm2 22 x 22 mm2 Capacity < 0.1 w/h 1-4 w/h (manual loading)* Mask/template cost 100 w/h - ~ $ 7k ~ $ 1-2k * Throughput can be improved through installation of a automatic wafer loading system or through using the industrial imprio300 tool (our imprio100 is used for process development purposes) Zachary Davis, DTI Confidential
TYPICAL FABRICATION PROCESS FOR J-FIL & METAL LIFT-OFF 1 - Cleaned Wafer Zachary Davis, DTI Confidential
TYPICAL FABRICATION PROCESS FOR J-FIL & METAL LIFT-OFF 2 Spin coat and bake adhesion/planarization/transfer-layer Zachary Davis, DTI Confidential
TYPICAL FABRICATION PROCESS FOR J-FIL & METAL LIFT-OFF 3 J-FIL imprint of Si containing resist Zachary Davis, DTI Confidential
TYPICAL FABRICATION PROCESS FOR J-FIL & METAL LIFT-OFF 4 Etch-back of imprint resist Zachary Davis, DTI Confidential
TYPICAL FABRICATION PROCESS FOR J-FIL & METAL LIFT-OFF 5 Dry develop to produce undercut Zachary Davis, DTI Confidential
TYPICAL FABRICATION PROCESS FOR J-FIL & METAL LIFT-OFF 6 PVD of metal Zachary Davis, DTI Confidential
TYPICAL FABRICATION PROCESS FOR J-FIL & METAL LIFT-OFF 7 Lift-off of all polymers and excess metal Zachary Davis, DTI Confidential
FIB-SEM CROSS-SECTION BEFORE LIFT-OFF 5 nm Ti + 65 nm Al Zachary Davis, DTI Confidential
TYPICAL NIL TEMPLATE Green is stamp protrusion and metal in final device 2.32 µm lines 1.25 µm spaces 200 nm lines 346 nm lines and spaces 346 nm lines and spaces Zachary Davis, DTI Confidential
Fabrication results 4 wafer with SAW resonators
SAW resonators on Langasite
Delay line devices Green is the stamp protrusion and in the end of the process the metal structures 100 µm 1.5 mm 500 µm Design: 346nm/346nm Template: 333.2/- Result: 355nm/335nm (+/-5nm) 5 nm Ti + 65 nm Al
Metal IDTs on LiNb Design: 346nm/346nm Template: 333.2/- Result: 355nm/335nm (+/-5nm) (5 nm Ti + 65 nm Al)
100 nm lines (5 nm Ti + 65 nm Al) and spaces on LiNbO3
Optical structures & lines 5 nm Ti / 40 nm Au on Si
Magnitude(arb.) Quartz resonator results 41 Resonant curves of 5 SAW resonators on same wafer 13 khz 39 37 35 33 31 3 20 23 26 43 29 27 4.4010E+08 4.4015E+08 4.4020E+08 4.4025E+08 4.4030E+08 4.4035E+08 Frequency (Hz) Q factor = 10000 with pure Al electrodes
AFM scan of 100nm thick Al IDT
In-house J-FIL templates 65mm2 Quartz block with 13mm x 13mm mesa area
30 nm lines Zachary Davis, DTI Confidential
Zachary Davis, DTI Confidential
40 nm dots Zachary Davis, DTI Confidential
PVD metallization optimization Rotating plate with up to 12 wafers Uniformity shield Variation = 2.95 nm Metal radiation Pocket with metal
Cryofox with optimized shield Standard Shield Variation = 2.95 nm Optimized Shield Variation = 1.55 nm GOAL = 0.5 nm
DTI results with J-FIL Metal lift-off of metal lines, CD > 30 nm Al Ti/Pt Ni AlCu (coming soon) Small (<100 nm) and large (mm s) features in same process Metal thickness < 160 nm for 100 nm lines, (<1:1.5) High uniformity batch metallization process to reduce fabrication tolerances High fidelity + thickness variation control of IDTs result in low fabrication tolerances Various substrate materials: Si ( > 95% yield) Quartz ( > 95% yield) Lithium Niobate ( > 95% yield) Langasite ( ~ 90% yield surface polishing issues) DTI can perform both J-FIL template fabrication & low /medium volume production Template fabrication : ~ 4weeks ($7000 - $10000) Wafer throughput ~ 10-20 wafers /week (manual wafer loader)
Thank You!