SUPPLEMENTARY INFORMATION

Similar documents
Kinematical theory of contrast

Transmission Mode Photocathodes Covering the Spectral Range

GaAs nanowires with oxidation-proof arsenic capping for the growth of epitaxial shell

Supplementary Figure 1 Scanning electron micrograph (SEM) of a groove-structured silicon substrate. The micropillars are ca. 10 μm wide, 20 μm high

3. Anisotropic blurring by dislocations

This journal is The Royal Society of Chemistry S 1

3.46 OPTICAL AND OPTOELECTRONIC MATERIALS

350 C for 8 hours in argon atmosphere. Supplementary Figures. Supplementary Figure 1 High-temperature annealing of BP flakes on SiO 2.

Atomic Structure of Ultrathin Gold Nanowires

Supporting Information to Carbon Nanodots Towards a Comprehensive Understanding of their Photoluminescence

2Dlayer Product Catalog

Tuned Chemical Bonding Ability of Au at Grain Boundaries for

Imaging with Diffraction Contrast

Conventional TEM. N o r t h w e s t e r n U n i v e r s i t y - M a t e r i a l s S c i e n c e

Project III. 4: THIN FILM DEVICES FOR LARGE AREA ELECTRONICS

Specimen configuration

Practical 2P8 Transmission Electron Microscopy

The growth of patterned ceramic thin films from polymer precursor solutions Göbel, Ole

High Resolution X-ray Diffraction

MOVPE growth of GaN and LED on (1 1 1) MgAl

Correlating the scattered intensities of P3HT and PCBM to the current. densities of polymer solar cells

SUPPLEMENTARY INFORMATION

Structural Characterization of Amorphous Silicon

Thin Film Scattering: Epitaxial Layers

EBSD Basics EBSD. Marco Cantoni 021/ Centre Interdisciplinaire de Microscopie Electronique CIME. Phosphor Screen. Pole piece.

Towards scalable fabrication of high efficiency polymer solar cells

Measurement of Residual Stress by X-ray Diffraction

Solar Cells and Photosensors.

EFFECT OF GROWTH TEMPERATURE ON THE CATALYST-FREE GROWTH OF LONG SILICON NANOWIRES USING RADIO FREQUENCY MAGNETRON SPUTTERING

Specimen Preparation Technique for a Microstructure Analysis Using the Focused Ion Beam Process

Electronic structure and x-ray-absorption near-edge structure of amorphous Zr-oxide and Hf-oxide thin films: A first-principles study

Formation of and Light Emission from Si nanocrystals Embedded in Amorphous Silicon Oxides

TEM imaging and diffraction examples

for New Energy Materials and Devices; Beijing National Laboratory for Condense Matter Physics,

Photoluminescence Spectroscopy on Chemically Synthesized Nanoparticles

Excess Volume at Grain Boundaries in hcp Metals

InGaN quantum dot based LED for white light emitting

average diameter = 3 nm, from PlasmaChem) was mixed in NLCs to produce QDembedded

Dislocations in Materials. Dislocations in Materials

TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE

Applications of Successive Ionic Layer Adsorption and Reaction (SILAR) Technique for CZTS Thin Film Solar Cells

Electron microscopy II

Planar Defects in Materials. Planar Defects in Materials

Supplementary Figure 1. Thermal IMT hysteresis data on crystal #30. Raman spectra

8. Epitaxy. - Extended single-crystal film formation on top of a crystalline substrate

Production of Few-Layer Phosphorene by Liquid Exfoliation of Black Phosphorus

ENS 06 Paris, France, December 2006

Formation, evolution, and annihilation of interstitial clusters in ion-implanted Si

Structural and Optical Properties of Aluminium Antimonide Thin Films Deposited By Thermal Evaporation Method

Chapter Outline Dislocations and Strengthening Mechanisms. Introduction

High-Resolution, Electrohydrodynamic Inkjet Printing of Stretchable, Metal Oxide Semiconductor Transistors with High Performances

Fs- Using Ultrafast Lasers to Add New Functionality to Glass

Excimer Laser Annealing of Hydrogen Modulation Doped a-si Film

Oxides for High Performance Lithium-Ion Battery Anodes

Thin Film Characterizations Using XRD The Cases of VO2 and NbTiN

Transmission Electron Microscopy (TEM) Prof.Dr.Figen KAYA

Twins & Dislocations in HCP Textbook & Paper Reviews. Cindy Smith

Luminescent and Tunable 3D Photonic Crystal Structures

Growth of Micro-Ikebana on a Floating Substrate: A Method to Monitor Local Supersaturation Levels

Supporting Information

7-2E. Photonic crystals

Supporting Information

31st European Photovoltaic Solar Energy Conference and Exhibition APPLICATIONS OF CARRIER DE-SMEARING OF PHOTOLUMINESCENCE IMAGES ON SILICON WAFERS

Self-Assembled Nanocrystals Through Change in. Nanocrystallinity

Growth Of TiO 2 Films By RF Magnetron Sputtering Studies On The Structural And Optical Properties

SEMATECH Symposium Korea 2012 Practical Analysis Techniques of Nanostructured Semiconductors by Electron Microscopy

Figure 2.3 (cont., p. 60) (e) Block diagram of Pentium 4 processor with 42 million transistors (2000). [Courtesy Intel Corporation.

Photovoltaics under concentrated sunlight

Materials Characterization

Germanium-Silicon Alloy and Core-Shell Nanocrystals by Gas Phase Synthesis

HOMEWORK 4 and 5. March 15, Homework is due on Monday March 30, 2009 in Class. Answer the following questions from the Course Textbook:

Growth and properties of (ultra) nano crystalline diamond

AFM-Raman Characterization of Pharmaceutical Tablets

6.8 Magnetic in-plane anisotropy of epitaxially grown Fe-films on vicinal Ag(001) and Au(001) with different miscut orientations

Nan Yao Princeton Materials Institute, Princeton University, Princeton, New Jersey 08544

DIFFERENT MECHANISMS FOR SYNTHESIS OF NANOWIRES AND THEIR APPLICATIONS

1. Introduction. What is implantation? Advantages

Poly-SiGe MEMS actuators for adaptive optics

The Significance of Bragg s Law in Electron Diffraction and Microscopy and Bragg s Second Law

Dynamics of Crystallization and Melting under Pressure

Process Flow in Cross Sections

Investigating the crystal orientation of SiC CVD using orientation imaging microscopy (OIM) & X-ray diffraction (XRD) by Deepak Ravindra

Radiation Damage of Polycrystalline CVD Diamond with Graphite Electrical Contacts

Study on Estimation Methods of Applied Stress using Fractography Analysis

Introduction to Dislocation Mechanics

2-inch polycrystalline silicon thin film transistor array. using field aided lateral crystallization

Computer Simulation of Nanoparticle Aggregate Fracture

Transmission Kikuchi Diffraction in the Scanning Electron Microscope

Evaluation of 4 Fe-doped InP wafers using a scanning photoluminescence technique

What if your diffractometer aligned itself?

Supplementary Figure S1 Crystal structure of the conducting filaments in sputtered SiO 2

Chapter 18: Electrical Properties

Chemistry 145 Exam number 4 name 11/19/98 # Faraday s constant is 96,500 c/mole of electrons.

Structure Analysis of -phase in Sb-Te Alloys by HRTEM* 1

Lecture 5. SOI Micromachining. SOI MUMPs. SOI Micromachining. Silicon-on-Insulator Microstructures. Agenda:

Introduction to Electron Backscattered Diffraction. TEQIP Workshop HREXRD Feb 1 st to Feb 5 th 2016

Slow DNA Transport through Nanopores in Hafnium Oxide Membranes

A Survey of Laser Types. Gas Lasers

Supporting Information

Transcription:

Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide Supplementary Figure S1: Commonly-observed shapes in MoS 2 CVD. Optical micrographs of various CVD MoS2 crystal shapes found in different growths. a) Mo- z- z triangles and 6- point star grown on clean Si/SiO2 substrates. Note: the small gold marks are metal alignment marks that were deposited after growth. b) Mo- z- z mirror twin crystal used for electrical devices in Figures 5i- j. c) S- z- z triangles and 5- and 6- point stars. d) Hexagons. e) Gear- like polycrystalline structures grown on dirty substrates. f) 3- point stars grown on dirty substrates. a- c) show the types of crystals achieved in large grain growth, while d- f) show the types of crystals grown as a result of dirty substrates or old precursors. NATURE MATERIALS www.nature.com/naturematerials 1

Supplementary Figure S2: Continuous sheet Figure S2a- b show optical images from two different, yet typical, samples similar to Figure 1a. The key difference between the samples is the grain size. On the top left in each image is bare oxide with sparse crystals. In both samples, CVD MoS 2 crystals can grow together to form continuous monolayer sheets (bottom right). The 2 NATURE MATERIALS www.nature.com/naturematerials

SUPPLEMENTARY INFORMATION gradients in nucleation density and grain size reflect the substrate proximity to the solid MoO 3 source. The small gold and orange dots, indicated by a red circle, are alignment marks placed after growth. Figure S2c shows two representative histograms of island size (as the square root of the area) extracted from portions of Figure 1a and Figure S2a. In the larger grain growths, such as in Figure S2b, the triangles grow together more to form aggregates and continuous sheets, making accurate measurement of grain size impossible without crystalographically sensitive techniques; For this reason only isolated islands in smaller- grain growths are included in Figure S2c, and regions near continuous sheets are excluded from the measurement. The spread in the histogram demonstrate the wide range of grain sizes and spatial inhomogeneity in all of our samples. NATURE MATERIALS www.nature.com/naturematerials 3

Supplementary Figure S3: Raman spectra and mapping a) Raman spectra showing the E 1 2g and A 1g vibrational modes 1 for monolayer (red curve) and bilayer (blue curve) MoS 2 corresponding with the photoluminescence spectra from Figure 1c. b- c) Maps of the peak position for the two Raman modes for monolayer tilt boundary from Figure 5 where b) represents the E 1 2g mode. and c) represents the A 1g mode. Both modes show an upshift of 1 cm - 1 at the grain boundary. While this shift may indicate a change in strain or doping at the boundary, it is difficult to interpret compared to the more marked changes to the photoluminescence seen in Figure 5 of the main text. Scale bar 5 µm. 4 NATURE MATERIALS www.nature.com/naturematerials

SUPPLEMENTARY INFORMATION Supplementary Figure S4: High resolution images of edge roughness a) Dark Field TEM image of a single Mo- z- z triangle on a holey amorphous carbon substrate. b- d) STEM images at increasing magnifications from the region inside the red box in a). In c), higher magnification reveals ~ 10 nm edge roughness as highlighted by the orange curve. In d) the MoS 2 lattice is visible, as well as atomic scale edge roughness. The non- uniform background variation in all images is due to the amorphous carbon TEM grid support (the perforated sheet in a). NATURE MATERIALS www.nature.com/naturematerials 5

Supplementary Figure S5: DF-TEM imaging of cyclic twin a) Bright- field image of a 6- pointed star. b) Full diffraction pattern shows star has no rotational boundaries. c- e) Dark- field TEM images corresponding with the c) red, d) blue, e) orange spots in the diffraction image. The red and blue [- 1100] spots show opposite intensity because they swap whether the k a or k b spot is captured for each region. The orange spot shows an even intensity over the entire star; this occurs because unlike the [- 1100] spots, the intensity of the [- 2110] spots are 6- fold symmetric (See Figure 1c). f) Bright- field TEM image with overlaid edge orientations extracted from DF- TEM. The outer edges are oriented along the Mo- z- z direction, which demonstrates that the grain boundaries are oriented along the S- z- z directions. 6 NATURE MATERIALS www.nature.com/naturematerials

SUPPLEMENTARY INFORMATION Supplementary Figure S6: Simulations of alternate mirror-twin boundaries a) Geometry optimized structure for the experimentally observed grain boundary, as determined by DFT (a). b) The local DOS (LDOS) integrated in the plane of the Mo over a 1.7 ev window inside the band gap of pristine MoS 2 confirms the spatial localization of mid- gap states. c) The energy- resolved density of states for pristine MoS 2 (black curve), the DOS of the structure shown in (a) (red curve), and the DOS projected just onto the atoms in the grain boundary (blue curve). In (c), we have subtracted off the contribution to the DOS arising from the unphysical edge atoms. NATURE MATERIALS www.nature.com/naturematerials 7

Analogous calculations are shown for an armchair grain boundary d- f) and for a zig- zag grain boundary g- i); both which are entirely periodic in two dimensions. In panels (b), (e), and (h), the colorscale indicates the magnitude of the integrated LDOS, from 0 (dark) to 0.025 bohr - 3 (light). Supplementary Figure S7: Time resolved photoluminescence Time- resolved photoluminescence measurements obtained by time- correlated single photon counting with femtosecond excitation by 400- nm laser pulses. Results for exfoliated and CVD MoS 2 samples on oxide layers, after accounting for the instrument response function, yield nearly identical time constants of τ exfoliated=44 ps, and τ CVD=42 ps. The measured emission decay found to varied considerably from sample to sample for both the exfoliated and CVD grown 8 NATURE MATERIALS www.nature.com/naturematerials

SUPPLEMENTARY INFORMATION materials, so the similarity of the curves in this figure should not be regarded as having fundamental significance. Supplementary Figure S8: Electrical measurements on a tilt boundary a) Linear and b) logarithmic electrical transport transfer curves of 3 FETs fabricated from the tilt boundary MoS 2 island shown in the inset of (a), which has a tilt angle of 42 (Scale bar 10 μm). The FETs containing the perpendicular (black) and parallel (orange) boundary orientation to the flow of electrons are both 30% lower in conductance than the pristine region (cyan) in the on state (gate voltage = +70 V). NATURE MATERIALS www.nature.com/naturematerials 9

Supplementary Methods: Electron Diffraction Simulation: We calculated the diffraction pattern for a monolayer of MoS 2 using Bloch wave simulations to account for the complex scattering that allows the breaking of Friedel s rule and produces this asymmetry (Figure 2). The asymmetry of the Mo and S sublattices separates the [- 1100] diffraction spots into two families : k a={(- 1100), (10-10), (0-110)} and k b= -k a. Our bloch- wave simulations show that the ~10% higher intensity k a spots point toward the Mo sublattice, as indicated by the arrows in Figures 2(a- b). We double- checked this result with high- resolution imaging to confirm that the asymmetric diffraction pattern in Fig 2(b) corresponds to the indicated orientation of the MoS 2 lattice. Identifying triangle edge terminations: Via TEM analyses, we consistently observe that Mo- z- z triangles (Figure 2(b)) have sharper and straighter edges than S- z- z triangles (Figure 2(d)). This morphological difference allows us to rapidly identify the crystal edges and orientation of triangles on the growth substrate simply by optical microscopy. In doing so, we also observe that all crystals from the same growth run have the same morphology, i.e., triangles from a given run will either be dominated by Mo- z- z or by S- z- z edges, a preference we attribute to kinetic effects. Both triangle morphologies exhibit the same range of average sizes from 30-70 µm. These classifications are important for understanding 10 NATURE MATERIALS www.nature.com/naturematerials

SUPPLEMENTARY INFORMATION growth dynamics and suggest the possibility of refined control of edge morphology by tuning the CVD process. DFT calculations: Density functional theory (DFT) calculations were performed with the PW91 generalized gradient approximation for the exchange- correlation functional and ultrasoft pseudopotentials, as implemented in the Quantum Espresso electronic structure package 5. Supercells were generated with about 10 Å separation to ensure negligible interactions between replicas. Structural relaxations were carried out at the gamma point until all components of all forces were less than 0.001 a.u. Pristine MoS 2 (3.12 and 2.32 Å for Mo- Mo and Mo- S bond lengths, respectively) energy calculations were done with a 16x16 Monkhorst- type k- point grid, confirming the material's direct band gap with a predicted energy of 1.9 ev. Preliminary calculations employing a finer k- point grid for the structural relaxation show minor quantitative but not qualitative changes to the grain boundary geometry and electron structure 6. Because the direction of the experimentally observed 8-4- 4 grain boundary is incommensurate with the periodicity of the underlying crystal, a system periodic in two dimensions cannot be constructed. Thus we employed the system shown in Figure S6(a) which is periodic along the direction of the grain boundary, but finite in the orthogonal direction such that the edge, terminated by S dimers, is about 10 Å NATURE MATERIALS www.nature.com/naturematerials 11

away from the grain boundary. Energy calculations for this 87- atom supercell were performed with 5 k- points in the periodic direction. Local density of states (LDOS) analysis, shown in Figure S6(b) confirms that the electronic effects of the artificial edges are physically confined along the perimeter and so should not affect the properties along the grain boundary. These conclusions are also corroborated by a negligible change in bond length, compared to the bulk, for atoms away from the grain boundary. Analogous calculations on 2D periodic systems with pure armchair and zig- zag grain boundaries, shown in Figure S6 (d- i) similarly yield mid- gap states localized along the boundary, further indicating that the effect is generic and not an artifact of the finite strip size. Estimating non-radiative recombination: Photoluminescence quenching commonly arises from defects in semiconductors, such as the predicted midgap states at the boundaries, which can act as centers for non- radiative recombination 7. While the amount of material structurally modified by the boundary is small compared with the 500- nm laser spot size, the effect can be enhanced by the diffusion of photogenerated excitons to the boundary, which effectively increases the boundary width. Such a process would provide a natural explanation for the strongly reduced PL observed from some boundaries in our samples, since non- radiative recombination may be more efficient in the presence of the localized structures and states of the boundary. Here we estimate the potential impact of this effect using measured values for the carrier mobility and exciton lifetime. 12 NATURE MATERIALS www.nature.com/naturematerials

SUPPLEMENTARY INFORMATION The electrical measurements in this paper yielded an electron mobility of µ e = 3 cm 2 V - 1 s - 1 for typical CVD- grown samples. From the Einstein relation for a temperature of T = 300 K, we then obtain an electron diffusivity of = 8 x 10-2 cm 2 s - 1. Since the electron and hole masses are similar, we assume that the exciton diffusivity is half of the electron diffusivity, i.e., D exc = 4 x 10-2 cm 2 s - 1. The scattering mechanisms for electrons and excitons need not be the same, so this should only be considered as an estimate. The characteristic length for diffusion of excitons towards the boundary from the 2- D bulk material over a time τ is given by. For a time interval of τ = 40 ps reported above for the exciton lifetime, we then infer a diffusion length of L = 24 nm. This length, while not negligible, is small compared to the 500 nm spot size of the excitation laser. The quenching of the PL by 50% observed at some grain boundaries must consequently rely primarily, as discussed in the main text, on mechanisms other than exciton diffusion. Supplementary References: 1 Lee, C. et al. Anomalous Lattice Vibrations of Single- and Few- Layer MoS2. ACS Nano 4, 2695-2700. 2 Huang, P. Y. et al. Grains and grain boundaries in single- layer graphene atomic patchwork quilts. Nature 469, 389-392 (2011). 3 Kim, K. et al. Grain Boundary Mapping in Polycrystalline Graphene. ACS Nano 5, 2142-2146 (2011). 4 Lahiri, J., Lin, Y., Bozkurt, P., Oleynik, I. I. & Batzill, M. An extended defect in graphene as a metallic wire. Nature Nanotechnology 5, 326-329 (2010). NATURE MATERIALS www.nature.com/naturematerials 13

5 Paolo, G. et al. QUANTUM ESPRESSO: a modular and open- source software project for quantum simulations of materials. Journal of Physics: Condensed Matter 21, 395502 (2009). 6 J. Kunstmann, T. B., D. Reichman. Unpublished results. 7 Neamen, D. A. Semiconductor physics and Devices. (McGraw- Hill, 2002). 14 NATURE MATERIALS www.nature.com/naturematerials