The Effects of the Adding V2O5 on the Oxide Semiconductor Layer of a Dye-sensitized Solar Cell

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, pp.66-71 http://dx.doi.org/10.14257/astl.2016.140.14 The Effects of the Adding V2O5 on the Oxide Semiconductor Layer of a Dye-sensitized Solar Cell Don-Kyu Lee Electrical Engineering, Dong-Eui University, Busan 614-714, Korea donkyu@deu.ac.kr Abstract. Photosensitizers certainly play a crucial role for highly efficient DSSCs and have been extensively investigated. In this study, we investigate the effect of V2O5 doping on the oxide semiconductor layer of a dye-sensitized solar cell. V2O5 - doped TiO2 paste is prepared by sol gel process screen print method and measure the characteristics of surface and electrical. According to V2O5 addition, the grain size increased, and the DSSC doped with V2O5 showed and excellent characteristics, in which open-circuit voltage, short-circuit current, Fill Factor and conversion efficiency are 0.99V, 8.34mA/cm2, 0.53 and 4.42%, respectively. Keywords: DSSC, V2O5-doped TiO2, TiO2, I-V curve 1 Introduction Solar power is the most renewable and sustainable energy resources in order to relieve the energy crisis. Particularly, the Dye-sensitized solar cell (DSSC) has become a considerable interest in the area of solar cell research since Gratzel s pioneering report in 1991 [1] because of the low production cost and environmental friendliness during fabrication. Furthermore, the other key attributes of DSSC technology are its simple manufacturing procedures, light weight, flexibility, semi transparency and good performance in diverse light conditions [2]. However, a comparison with conventional solid-state junction devices made of crystalline silicon indicates that the DSSC has lower power conversion efficiency [3]. A standard DSSC is composed by a layer of transparent conducting oxide (TCO) on a glass substrate like figure 1. Then a nanostructured layer of TiO 2 which the dye is absorbed. At last there is the electrolyte and the counter electrode by Pt. The main principle of this DSSC is the dyesensitization of wide band gap semiconductors such as TiO 2 layer. Photosensitizers certainly play a crucial role for highly efficient DSSCs and have been extensively investigated. In the recent, many research group have investigated the interface effects such as charge separation, reverse recombination and trapping of photo generated electrons in the semiconductor surfaces, independently by choosing appropriate combinations of materials and their assembly [4]. Especially, to optimize the overall energy conversion efficiency, it is important to determine a material architecture of various oxide semiconductor that lowers the recombination currents, enhances the light absorption and ensure a good electric connection. In this study, we investigate to ISSN: 2287-1233 ASTL Copyright 2016 SERSC

improve the characteristics of the V 2O 5 doing on TiO 2 paste. Vanadium based oxides belongs to transitional metal oxides which are of particular interest because of their low cost, abundance in nature, good electrical conductivities, good catalytic activity and excellent atmospheric stability. Particularly, because V 2O 5 has lower conduction band than TiO 2, the flow of electrons will increase on DSSC. In order to investigate the characteristics of V 2O 5 doping, we measure the SEM images, XRD patterns and I-V curve. Fig. 1. A structure of standard dye-sensitized solar cell. 2 Experiment Method 2.1 Synthesis of V2O5 - doped TiO2 paste The paste was prepared by the TiO 2 paste and the V 2O 5 - doped TiO 2 paste for comparison. The TiO 2 paste was prepared by mixing the 2g of TiO 2 (anatase, 98.5%, junsei), ethanol 40ml, terpienol 1.0ml and ethyl cellulose 4.5g during 2 hours. The V 2O 5 - doped TiO 2 paste was prepared by mixing the TiO 2 paste and the 0.6g of V 2O 5 during 2 hours. The ratio of V 2O 5 was chosen by previous experiment. The 4.5g of ethyl cellulose was selected for optimal performance such as screen print and adsorption of dye among 3g, 4g, 4.5g and 5g. 2.2 Fabrication of DSSC First, the working electrodes was prepared by the following methods. ITO coated TCO glass was used as working electrode of the device and was cut into small piece (1 2cm). This substrate were cleaned with 2-Propanel, acetonitrile and then distilled water by ultrasonic cleaner for 10min at each step. After the cleansing and drying process of the substrates, our produced the pastes (TiO 2, V 2O 5-doped TiO 2) were screen printed on Copyright 2016 SERSC 67

the compact layered and the active areas were 0.25cm2. The paste layer was then heated at 450 for 30 min and then these samples were sensitized with N719 for 24hours. Second, the counter electrodes were prepared by the following methods. ITO coated glass was cut into the same dimensions as the working electrodes. A small hole (0.7mm) was drilled to facilitate the injection of electrolyte and the drilled substrates were cleaned the same methods. A commercial platinum paste (H 2PtCl 6) was used as received and fired at 450 for 30min in order to remove organic binders. The Pt electrode and the dye-adsorbed TiO 2 electrode were assembled as a sandwich-type. Iodide based low viscosity electrolyte (0.5M Lil, 0.05M I 2, 0.5M 4-tertbutylpyridine in acetonitrile) was injected into the structure via a capillary action. 2.3 Measurement of DSSC Characteristics The morphology of the samples was determined using field emission scanning electron microscopy, FESEM instrument equipped with energy dispersive X-ray (EDX) spectrometer for the elemental analysis and surface mapping. The phase structure was characterized using X-ray diffraction (XRD) measurements with Cu Kα monochromatic radiation (λ = 1.541A ) at a scanning rate of 2 /min. The current-voltage curves these DSSC were obtained under AM1.5 illuminations with and intensity of 100mW/cm 2 and were recorded by a Keithley high-voltage source interfaced with a personal computer. We measured the photovoltaic characteristics of the DSSC by applying an external potential bias to the cell and measuring the generated photocurrent (Keithley source meter Model 2400). The illuminated active area of the cell was 0.25 cm 2. The open-circuit voltage (Voc) and short-circuit current (Isc) were obtained from the intersection of the voltage and current axes, respectively. The fill factor and the overall energy efficiency were calculated according to the following equations: Fill Factor : FF = I max V max I OC V OC (1) Overall energy efficiency : ŋ = FF V OC I SC E in A With Imax, Vmax, the current and the voltage at maximum power point, respectively; Voc is the open circuit voltage and Isc is the short circuit current. It is considered that the Isc and Voc are the highest current and voltage obtained from the cell. Ein is the incident irradiation power (100mW/cm 2 ). 3 Experiment Results Figure 2 shows the SEM image of (a) TiO 2 paste and (b) V 2O 5-doped TiO 2 paste on the ITO substrate. Close inspection of SEM image shows the both paste have irregular shape and the particles of TiO 2 and V 2O 5 are uniformly distributed over the ITO substrate. Size of the particle varies from 100nm to 200nm and this nano-particle on the substrate provides the larger adsorption surface for dye molecule and enhance the performance of solar cell [5]. In case of V 2O 5-doped TiO 2 paste, the particles show bigger and lumper particles than pure TiO 2 paste. 68 Copyright 2016 SERSC

(a) TiO 2 paste (b) V 2O 5-doped TiO 2 paste Fig. 2. SEM image of (a) TiO2 paste and (b) V2O5-doped TiO2 paste. Figure 3 shows the XRD pattern of TiO 2 and V 2O 5-doped TiO 2 paste printed on the ITO substrate. The synthesized TiO2 particles are of tetragonal crystals (JCPDS card no. 04-0477), assigned to the space group 141/amd with lattice contacts a = 3.783A, b = 3.783A, c = 9.51A This diffraction peaks at 2h angle 25.29, 37.79, 48.01, 53.91, 55.06 and 62.57 corresponding to (101), (004), (200), (105), (211) and (204) plans confirms anatase phase and the crystalline nature of TiO 2. The V 2O 5-doped TiO 2 paste indicates the peak around 20 which is the typical peak of V 2O 5, and we show the distend figure between 20 to 30. Fig. 3. XRD pattern of (a) TiO2 paste and (b) V2O5-doped TiO2 paste The current-voltage curves characteristics of TiO 2 DSSC and V 2O 5-doped TiO 2 DSSC were shown in figure 4 and table 1. The open-circuit voltage (Voc) of the both DSSC is almost same as 1V and the short-circuit current (Isc) is 7.71mA for TiO 2 DSSC Copyright 2016 SERSC 69

and 8.34mA for V 2O 5-doped TiO 2 DSSC. Thus, V 2O 5 doping brought about 1.1times raise of Isc, and that cause an increasing of fill factor (FF) and efficiency (ŋ). The doping of V 2O 5 which has lower conduction band than TiO 2 leads to reduce the recombination between dye and electrolyte. Therefore, the flow of electrons increase, and then the short-circuit current and efficiency increase. Fig. 4. I-V characteristics curve of TiO2 DSSC and V2O5-doped TiO2 DSSC Table 1. I-V characteristics curve of TiO2 DSSC and V2O5-doped TiO2 DSSC Isc (ma) Voc (V) FF Η (%) TiO2 7.71 0.98 0.46 3.54 TiO2 +V2O5 8.34 0.99 0.53 4.42 4 Conclusion DSSCs show the most promising future due to their independence, environmentally friendly, low maintenance, and low cost. For more improvement of DSSC characteristics, we doped the V 2O 5 on the oxide semiconductor layer (TiO 2). First, we analyze the surface through SEM image and XRD pattern, and measure the photovoltaic characteristics of the DSSC. So we confirm the appropriate mixture TiO 2 70 Copyright 2016 SERSC

and V 2O 5 paste, and the DSSC with V 2O 5 - doped TiO 2 paste increase the short-circuit current, fill factor and efficiency. Especially, the efficiency of V 2O 5 - doped TiO 2 paste increase 1.3 times than pure TiO 2. Acknowledgments. This work was supported by Dong-Eui University Grant. 20160138001 References 1. O Reagen, B., Gratzel, M.: Nature, 353, 737, (1991). 2. Gratzel, M.: Prog. Photovolt. Res. Appl. 14, 429 42, (2006) 3. Chou, C.S., Yang, R.Y., Weng, M.H., Yeh, C.H., Powder Technology 187, 181-189, (2008). 4. Deepa, K. G., Lekha, P., Sindhu, S.: Solar Energy 86, 326-330, (2012) 5. Mane, R.S., Lee, W.J., Pathan, H.M., Han, S.H.: J. Phys. Chem. B 109, 24254 24259 (2005) Copyright 2016 SERSC 71