EMZ51. Power management (dual transistors) Datasheet. Parameter Value SOT-563 V CEO 20V SC-107C I C 200mA. Parameter Value V CEO -20V I C.

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Transcription:

EMZ51 Power management (dual transistors) Datasheet <For Tr1(NPN)> loutline Parameter Value SOT-563 V CEO 20V SC-107C I C 200mA <For Tr2(PNP)> EMT6 Parameter Value V CEO -20V I C -200mA lfeatures 1) General Purpose. 2) 2SAR522 and 2SCR522 chips in one package. 3) Transister elements are independent, eliminating interface. 4) Mounting cost and area can be cut in half. linner circuit lapplication SWITCH, LED DRIVER lpackaging specifications Part No. EMZ51 Package SOT-563 (EMT6) Package size Taping code Reel size (mm) Tape width (mm) Basic ordering unit.(pcs) Marking 1616 T2R 180 8 8000 Z51 2016 ROHM Co., Ltd. All rights reserved. 1/9 20160212 - Rev.003

EMZ51 Datasheet labsolute maximum ratings (T a = 25 C) Parameter Symbol Tr1(NPN) Tr2(PNP) Unit Collector-base voltage V CBO 20-20 V Collector-emitter voltage V CEO 20-20 V Emitter-base voltage V EBO 5-5 V Collector current I C 200-200 ma I *1 CP 400-400 ma Power dissipation P *2*3 D 150 mw/total Junction temperature T j 150 Range of storage temperature T stg -55 to +150 lelectrical characteristics (T a = 25 C) <For Tr1(NPN)> Parameter Symbol Conditions Values Min. Typ. Max. Unit Collector-base breakdown voltage BV CBO I C = 50μA 20 - - V Collector-emitter breakdown voltage BV CEO I C = 1mA 20 - - V Emitter-base breakdown voltage BV EBO I E = 50μA 5 - - V Collector cut-off current I CBO V CB = 20V - - 100 na Emitter cut-off current I EBO V EB = 5V - - 100 na Collector-emitter saturation voltage V CE(sat) I C = 100mA, I B = 10mA - 120 300 mv DC current gain h FE V CE = 2V, I C = 1mA 120-560 - V Transition frequency f CE = 10V, I E = -10mA, T f = 100MHz - 400 - MHz Output capacitance C ob V CB = 10V, I E = 0A, f = 1MHz - 2.0 - pf lelectrical characteristics (T a = 25 C) <For Tr2(PNP)> Parameter Symbol Conditions Values Min. Typ. Max. Unit Collector-base breakdown voltage BV CBO I C = -50μA -20 - - V Collector-emitter breakdown voltage BV CEO I C = -1mA -20 - - V Emitter-base breakdown voltage BV EBO I E = -50μA -5 - - V Collector cut-off current I CBO V CB = -20V - - -100 na Emitter cut-off current I EBO V EB = -5V - - -100 na Collector-emitter saturation voltage V CE(sat) I C = -100mA, I B = -10mA - -120-300 mv DC current gain h FE V CE = -2V, I C = -1mA 120-560 - V Transition frequency f CE = -10V, I E = 10mA, T f = 100MHz - 350 - MHz Output capacitance C ob V CB = -10V, I E = 0A, f = 1MHz *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. - 3.0 - pf 2016 ROHM Co., Ltd. All rights reserved. 2/9 20160212 - Rev.003

lelectrical characteristic curves(t a =25 C) <For Tr1(NPN)> Fig.1 Ground Emitter Propagation Characteristics Fig.2 Typical Output Characteristics Fig.3 DC Current Gain vs. Collector Current (I) Fig.4 DC Current Gain vs. Collector Current (II) 2016 ROHM Co., Ltd. All rights reserved. 3/9 20160212 - Rev.003

lelectrical characteristic curves(t a =25 C) <For Tr1(NPN)> Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current (I) Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current (II) Fig.7 Base-Emitter Saturation Voltage vs. Collector Current Fig.8 Gain Bandwidth Product vs. Emitter Current 2016 ROHM Co., Ltd. All rights reserved. 4/9 20160212 - Rev.003

lelectrical characteristic curves(t a =25 C) <For Tr1(NPN)> Fig.9 Emitter Input Capacitance vs. Emitter-Base Voltage Collector Output Capacitance vs. Collector-Base Voltage Fig.10 Safe Operating Area 2016 ROHM Co., Ltd. All rights reserved. 5/9 20160212 - Rev.003

lelectrical characteristic curves(t a =25 C) <For Tr2(PNP)> Fig.1 Ground Emitter Propagation Characteristics Fig.2 Typical Output Characteristics Fig.3 DC Current Gain vs. Collector Current (I) Fig.4 DC Current Gain vs. Collector Current (II) 2016 ROHM Co., Ltd. All rights reserved. 6/9 20160212 - Rev.003

lelectrical characteristic curves (T a = 25 C) <For Tr2(PNP)> Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current (I) Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current (II) Fig.7 Base-Emitter Saturation Voltage vs. Collector Current Fig.8 Gain Bandwidth Product vs. Emitter Current 2016 ROHM Co., Ltd. All rights reserved. 7/9 20160212 - Rev.003

lelectrical characteristic curves(t a =25 C) <For Tr2(PNP)> Fig.9 Emitter Input Capacitance vs. Emitter-Base Voltage Collector Output Capacitance vs. Collector-Base Voltage Fig.10 Safe Operating Area 2016 ROHM Co., Ltd. All rights reserved. 8/9 20160212 - Rev.003

ldimensions 2016 ROHM Co., Ltd. All rights reserved. 9/9 20160212 - Rev.003

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