Nanotechnology makes brighter LED s. Michael P.C. Watts

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Transcription:

Nanotechnology makes brighter LED s Michael P.C. Watts www.impattern.com

Outline Why are LED s such a big deal? Brightness; lumens per watt & lumens per dollar Applications How does nanotechnology help? Light extraction Light creation How to implement nanotechnology cost effectively? -Sub 100 nm features at < 1 c per device -Limited align and defects -Ideal imprint application -Which companies are poised to make an impact?

Why are LED s such a big deal? Light usage $230 B world wide 30% savings possible, > 300 power plants + fuel. Light efficiency cost life Max possible 250 lm/w Tungsten 16 lm/w <0.01 $W 1,000 hrs Flourescent 60 lm/w 8,000 hrs LED 50-80 lm/w 2-5 $/W 50,000 hrs* *Depends a great deal on keeping it cool! Total cost of ownership works today (energy + replacements) but we are not good at making long term financial decisions!!

High replacement cost, leverage life Traffic lights Commercial lighting Leverage design Car lights Low power, leverage efficiency Cell phone display What s next Home, leverage design & efficiency Projection displays leverage brightness of LED with photonic crystals FPD, leverage color control Applications

How does nanotechnology help? The problem and conventional solutions Light extraction Photonic crystals + thin devices Light creation + reflectors + webbed conductors + patterned growth

An LED Device options Structure of a Light Emitting Diode

Light trapping GaN layer has a high refractive index, a limited angle of light leaves, the rest undergoes Total Internal Reflection Multiple bounces interfere Creates standing waves waveguide modes 62% of light is trapped in GaN layer 11% trapped in substrate 4% in every direction 62% 11%

Conventional Solutions Encapsulation traditional Faceting Very expensive Roughening + encapsulation Industry standard

Gratings Pattern on surface Directs light Patterned extraction Photonic Crystals Pattern through waveguide Absorbs and extracts light Light in the plane of the waveguide extracted by the PC Light in the plane of the waveguide is blocked by the PC

Photonic Quasi Crystal optimizes beam shape and uniformity Lumileds showed beam shaping experimentally Luminus Devices are selling product for projection displays 150 120 120 90 2.5 90 5 10 60 60 30 180 0 half cone angle ( ) 150 55 50 45 40 35 30 120 90 2.5 5 60 30 180 0 150 120 90 2 4 60 30 180 0 PQC PC 150 120 90 2 4 60 30 180 0 150 120 90 2 4 60 30 Regular PC Photonic Quasi Crystal Below radial light distribution Photonic quasicrystal (PQC) Photonic crystal (PC) 150 Arbitrary Light extraction 90 3 120 θ 60 2 1 30 Simulation assuming viewer integrating light between altitude angle=0 to 90 o 150 5 30 25 180 0 180 0 180 0 20 20 30 40 50 60 70 80 air filling fraction (%) PC/PQC parameters 90 4 120 60 120 90 4 60 210 330 θ 150 2 30 150 2 30 180 0 180 0 Mesophotonics showed beam shaping control in models 240 270 300 Pitch = 300nm Hole diameter = 120nm Etch depth = 150nm

PC control of extraction Roughened encapsulated devices have 30-40% extraction, consistent with 50-80 ln/w devices Encapsulated PQC 45% > roughening 35% or 1.25x improvement Thin device 80% > thick 45% Model matches experiment (carefully optimized examples) Extraction efficiency % 100 80 60 40 20 0 Flat die Roughening PC PQC Thin LED PQC Flat LED Hemispherical Encapsulated Model Model and experimental data showing control of the light distribution by the photonic crystal, from literature and Mesophotonics. Literature data normalized to a 3um thick GaN device. Effect of encapsulation on roughened devices scaled from PC.

PC and thin devices 0.5 um 1um extraction enhancement factor 6 5 4 3 2 1 More PC overlap with modes in a thin LED, hence better extraction 0 0 500 1000 1500 2000 2500 3000 3500 LED thickness in nm Model data for LED optimized at 3 um thick and then thinned. Mesophotonics.

Light creation effect of adding a mirror Mirror placed close (< 1 lambda) to quantum well maximizes output Lumileds Metal substrate can act as mirror and heat sink Semileds

Optimized thin (<0.5 um) devices Encapsulant that does not fill the PC 320 nm ngan nominal 120 nm MQW 40 nm pgan 100 nm Silver Regular lattice, pitch from 200 to 300 nm 57-69% Regular lattice, varying fill factor 57/60/54 % Regular lattice, andomized pitch by 10% 70% Pattern optimization 73-80% Quasi crystals 83% Luminus Devices Patent Specification

Light creation Web of conductors Control current distribution Nichia have implemented Lateral overgrowth Grow through holes patterned in substrate Reported by all major suppliers

Future device Grown by lateral overgrowth Mirror deposited Surface sub micron layer sliced off / thinned and flipped PQC patterned Extraction potential > 80% Reduced cost Brighter than florescent, reduced heat sinking All wafer level processing Large die, fewer packages Simple package Processed in automated factory > 3 wafers

How to implement nanotechnology cost effectively? - Requirements LED Integrated Circuit - Sub 100 nm features at < 1 c per device 50 c per device - Limited overlay 2-3 um 20 nm overlay - Redundant part not defect critical 1, 20 nm defect is lethal - Imperfect wafers Perfect wafers - Solutions - Optical horribly expensive ($20M) - Electron beam expensive ($5M) and slow - Imprint ideal application ($1-2M) - How does imprint work? - Which companies are poised to make an impact?

Imprint module a) EVG clean coat system b) MII imprinter c) Trion etcher

Imprinting Residual layer, must be << pattern height, around 50 nm UV cure is faster than thermal Industry consensus

Making the mold Electron beam write a few die, etch the pattern Electron beam write a whole mold, etch the pattern S&R imprint whole mold Use or make multiple copies working plates

Imprint on rough wafers Non conformal Conformal - mold deforms Flex wafer Contact printer solution, not sufficient for LED wafers Flex thin hard mold; MII, Nanonex Hard surface is cleanable, lowest cost of ownership Soft plastic, fragile mold either need many working copies, highest cost - EVG or have a one use mold a dual head imprinter Obducat Mold or imprint must be monitored in all cases 8 um flat wafer 9 nm uniform imprint MII

Production imprint solutions All production tools are in varying stages of development, all should be made to work. EVG Supplies converted contact printer > $200 M in sales Production system available ARO Make your own soft working mold MII Reported most performance data Supplies thin hard molds, and supports master creation and detailed process applications Production tool focus Best throughput potential Start up Nanonex Dominates manual lab tools Production system available ARO No mold technology recommendation Start up Obducat Second manual lab tool supplier Small public company Developing first production one use mold system Limited overlay from plastic film mold Numerous minor suppliers; Suss etc. b) MII imprinter

Process To pattern over small length scale roughness need planarization 50 nm features 100 nm height change MII

Rest of the module

Clean and Coat Requirements < 50 nm residual layer thickness on 150 nm planarization layer < 10 particles per wafer greater than 100 nm < 10 nm variation in thickness Small wafers Suppliers should meet these targets EVG Suss SSEC S-Cubed Pre Post Pre Post Clean data from SSEC, < 8 particles post clean Coat thickness data on a S-Cubed systems, < 5 nm variation

Etch Multiple etch steps 1. Residual layer 2. Planarization 3. Hard mask 4. GaN needs high density plasma GaAs etch Suppliers of multichamber systems, support GaN etch on small wafers Trion Oerlikon (used to be Unaxis) c) Trion etcher

Metrology Defects The regular pattern makes defects much more visible KLA patterned wafer Surfscan KLA optical inspection Thickness < 50 nm Spectrometry Metrosol (Austin TX) Ellipsometry KLA, Nanometrics SEM Phillips Jeol Hitachi Used equipment available in most cases

Cost of ownership Price of systems and materials will tend to converge due to competition Mold life and cost to replicate will be the dominant cost differential between suppliers solutions. Imprint module COO is in the $10-15 a wafer range 5,000-8,000 die per wafer

Conclusions Nanopatterning poised to impact LED s Luminus Devices have implemented PC on LED by imprint and you can buy a projector today!! Photonic Quasi Crystals offer uniform light beam essential to avoid external optics Photonic Crystals on Nanolayer devices have potential for 80% extraction Web conductors Overgrown epitaxy Imprint poised to enable manufacturing 2 suppliers are developing production solutions - MII, Obducat 2 suppliers have committed to build to order EVG, Nanonex