Customer Process Change Notification Form

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Customer Process Change Notification Form PCN-2013-513 Notification Date: 10/1/2013 Part Information Cirrus Logic Part # / Quantity CS42L73-CWZR PCN Effective Date: 1/1/2014 Cirrus P/N Change: Yes No If yes, provide new part number: Lot Effective Date: (Contact the sales representative for availability of samples if applicable) Package Mark Yes No Change: If Yes, briefly explain: Country of origin indicator marked on package body will change for material assembled at Deca Technologies: ASE Chung Li (current) = TWN Deca Technologies (new) = PH [Any Fab, Assembly, or Design changes results in pack mark changes, please provide detail] Reason for Design/New Rev Change: Assembly Site Fab Site Fab Process Additional Assembly Source Assembly Process Other (Specify) Additional Fab Source Cirrus Logic will add Deca Technologies (Philippines) as a qualified RDL and Bumping source for CS42L73-CWZR WLCSP production. Wafer sort, backgrind, laser marking, dicing and tape / reel will continue to be performed at ASE Chung Li. Description of Fix Errata Change: Fix Known Bug Other (specify) Yield Enhancement Performance Improvement

Additional assembly capacity and assurance of supply. Quality and Reliability Impact: Qualification Data Required? Yes No Data Sheet Change Required? Yes No If Yes, briefly explain: Software Change Required? Yes No If Yes, briefly explain: Customer Acknowledgement and Agreement Acknowledged and Agreed as of the Date written below: Customer Company Name: Customer Contact Name: Title: Signature: Date: Customer Comments: Customer Agreed Customer Reject Not Applicable Title: CUSTOMER PROCESS CHANGE NOTIFICATION FORM Digitally Signed By: Doc No: Rev: 4-QUAL-00017 D Cirrus Logic, 800 W. 6th St., Austin, Texas 78701, TEL: (512) 851-4000

CS42L73-CWZR Assembly Site Addition

Summary of Changes Deca Technologies is being added as a qualified source for RDL and Bumping services Wafer sort, back-grind, laser marking, dicing and tape / reel will continue to be performed exclusively at ASE Chung Li BOM differences Deca Technologies utilizes a 4 Layer process with plated RDL and UBM structures Lower trace resistance and improved board level reliability performance PBO thickness increased to 7.5 um / layer Improved board level reliability performance Country of origin will change on package marking ASECL = TWN Deca Tech = PH No change in overall package outline or conformance to datasheet No change in solder ball composition or size No change in wafer back-grinding thickness

CS42L73-CWZR Manufacturing Flow ASECL Manufacturing Flow Foundry RDL / Bump ASECL Deca Tech Manufacturing Flow Foundry RDL / Bump Deca Tech Test Test Backgrind Backgrind Mark ASECL Mark ASECL Singulation Singulation Tape and Reel Tape and Reel Current Flow Additional Flow

CS42L73-CWZR BOM Comparison C B A UBM RDL Incoming Wafer Solder Ball Dielectric 1 Dielectric 2 Wafer Passivation (nitride) Layer Description ASECL Deca Technologies A Wafer 305 um 305 um B Dielectric Layer 1 PBO 5 um RDL Sputtered Ti / Al / Ti 2 um C Dielectric Layer 2 PBO 5 um UBM Solder Sphere Size / Composition Sputtered Al / NiV / Cu 1.5 um 250 um diameter SAC 405 PBO 7.5 um TiW / Cu / Plated Cu 4 um PBO 7.5 um TiW / Cu / Plated Cu 9 um 250 um diameter SAC 405

Marking Illustration CS42L73-CWZR ASECL Turnkey Flow Deca Technologies Flow B0= Device Revision LL = Unique Lot ID YYWW = Date Code TWN = Country of Origin Taiwan B0 = Device Revision LL = Unique Lot ID YYWW = Date Code PH = Country of Origin Philippines

Qualification Reliability Report Report: Date: Approved by: QRR130344 24-SEP-2013 Muruganandhan Subramaniam Purpose Status Qualification of CS42L73-CWZR at assembly Deca Technologies. Qualification successful. Fab: TSMC (Taiwan) Assembly: Deca Technologies (Philippines) Rev: B0 Package: 64 WLCSP CS42L73 Stress Name Method Conditions Lot Read Point Results (Fail/Sample) Wafer Level - HTSL (High Temperature Storage Life) JESD22-A103 150 C Results measured by ball shear 1 1000 Hours 0 / 45 Wafer Level - Precondition JESD22-A113 24HR 125 C Bake 168HR 85 C/85%RH Soak 3 pass 260 C peak reflow Results measured by ball shear 1 MSL1 0 / 45 Wafer Level - Autoclave (Pressure Pot) JESD22-A102 121 C 100% R.H. Post Precondition Results measured by ball shear 1 96 Hours 0 / 45 Similarity Stress Name Method Conditions Lot Read Point Results (Fail/Sample) Board Level - Temperature Cycle IPC-SM-785 / JESD22- A104 0 C to +100 C Air to air Continuous in-situ monitoring Accelerated conditions de-rated 1 1000 Cycles 0 / 45 Board Level - Drop Test JESD22-B111 Condition B 1500 G Pulse duration 0.5ms Continuous in-situ monitoring 1 30 Drops 0 / 45 Cirrus Logic Confidential Page 1 of 1