GENERIS PVD Inline Sputtering System for Heterojunction Cells
GENERIS PVD Inline Sputter System for ITO and Ag Deposition on Heterojunction Solar Cells Sputtering Technology at a Glance has delivered far more than 8,000 vacuum coating machines since its foundation in 1995. It ranges from compact systems for optical disc replication to ultra-high vacuum coating machines applying extremely thin layers of around 0,2 nm for the semiconductor industry as required for the manufacturing of MRAM chips. In addition, vacuum thin-film technology is used in modern sensory technology for medical uses and in vehicle technology as well as for piezoelectric materials in mobile phone technology. develops innovative technologies for economic and resource-efficient production processes and the strategy is based on the use and expansion of its existing core competencies. The range of use of the machines built by SINGULUS TECHNOLOGIES include vacuum thin-film and plasma coating, wet-chemical cleaning and etching processes as well as thermal processing technology. For all machines, processes and applications utilizes its know-how in the areas of automation and process technology in order to provide additional, attractive work areas with innovative products next to the existing application areas of Solar, Semiconductors and Optical Disc. One main focus during solar cell production is on efficiency. Heterojunction cell technology (HJT) achieves conversion efficiencies of more than 22 % as well as reduced manufacturing costs. The newly developed GENERIS PVD system is a horizontal inline sputter tool designed for the special needs in photovoltaic high efficiency cell production. Heterojunction cells are coated on both sides with transparent, conductive oxide (TCO) layers by PVD (physical vapor deposition). The system is ideally suited for challenging layer stacks i.e. transparent conductive oxide layers like ITO and AZO providing maximum optical transmittance, matched refractive index and optimum electrical conductivity as well as charge carrier mobility, which are key-parameters in heterojunction cell technology. Sputter damage to the amorphous silicon layer stack does not occur. Full substrate temperature control during the whole process enables optimum layer performance at temperatures 200 C. GENERIS PVD Dedicated Inline Sputtering System for Heterojunction Solar Cells
With the GENERIS PVD sputtering system, contact layers can be deposited on the front and rear of the wafers without the need to turn the wafers between coating processes and without vacuum interruption. Annealing of sputtered layers is integrated optionally. Finally full area metal coatings, e.g. Ag can be deposited within the same system. By using cylindrical sputtering magnetrons, high target utilization is achieved and offers lowest cost of production. Other typical applications include anti-reflection layers, barrier layers and precursor layers, but also different metallic layers like Al, Cu, and NiV. The system is using an inline process in which the substrates are transported on specially designed carriers, providing edge isolation simultaneously. The carrier return system is located below the machine under clean environment conditions. Different automation options for loading and unloading are available. Typical Performance Characteristics GENERIS PVD For transparent conductive oxide layers like ITO and AZO, e.g. for HJT Parallel processing of several substrates Available in 3 versions: GENERIS lab GENERIS PVD 3000 for about 2400 w/h GENERIS PVD 5000 for about 5600 w/h Modular configuration Low cost of ownership and high uptime Top down and bottom up sputtering configurable Sputter sequence configurable Full temperature control throughout the whole process Rotatable cylindrical magnetrons for highest utilization of target material Sputtering materials: ITO, AZO and metals like Ag, Ni, NiV, Cu, Al etc. Single end and double end version selectable Manual or semi-automated lab versions on request
IV Data of Heterojunction Solar Cells Sputtered with ITO on GENERIS PVD The Modularity of the GENERIS PVD System Allows a High Degree of Flexibility Generis Lab ING UNING TMP PROCESS 1 TMP PROCESS 21 TMP Generis PVD 3000 ING UNING BUFFER GAS TMP PROCESS 1 TMP TMP PROCESS 2 TMP SEPARARTION LIFT Generis PVD 5000 ING UNING BUFFER GAS BUFFER PROCESS 1 TMP PROCESS 2 TMP TMP PROCESS 3 TMP PROCESS 4 TMP LIFT SEPARARTION
Rotary Magnetrons with intensive cooling and high material/target utilization Target utilization about 80 % for rotatable compare with only 30 % for planar cathode More stable process with rotatable cathodes because of less Nozzle formation Long-life rotary seals Maintenance on customers site (no resend to supplier for repair) Advanced water fill and drain features Flexible target attachment method and non-proprietary target design Industry standard or compact mounting pattern generis pvd Technical Data Cycle time Carrier size Throughput Sputter material Vacuum base pressure Typical process pressure 45-75 s/carrier depending on configuration ~1400 mm x 1200 mm 56 wafers per carrier (8x7) 2500-5000 w/h (gross), depending on configuration ITO (top down/bottom up sputtering) 1 x 10-6 mbar 2-5 x 10-3 mbar
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