State of the art in silicon immersed gratings for space - Aaldert van Amerongen, Hélène Krol, Catherine Grèzes-Besset, Tonny Coppens, Ianjit Bhatti,

Similar documents
Figure 6. Rare-gas atom-beam diffraction patterns. These results were obtained by Wieland Schöllkopf and Peter Toennies at the Max-Planck Institute

Spectrometer gratings based on direct-write e-beam lithography

Low aberration monolithic diffraction gratings for high performance optical spectrometers

EECS130 Integrated Circuit Devices

Czochralski Crystal Growth

Chapter 3 Silicon Device Fabrication Technology

An innovative approach to coatings on large optics

ELEC 3908, Physical Electronics, Lecture 4. Basic Integrated Circuit Processing

Today s Class. Materials for MEMS

Coatings. Ion Assisted Deposition (IAD) process Advance Plasma Source (APS) plasma-ion assisted Deposition. Coatings on Optical Fibers

Review of CMOS Processing Technology

Because of equipment availability, cost, and time, we will use aluminum as the top side conductor

Photoresist Coat, Expose and Develop Laboratory Dr. Lynn Fuller

Introduction to Lithography

Micro- and Nano-Technology... for Optics

Optical Coatings. Photonics 4 Luxury Coatings , Genève. Dr. Andreas Bächli Head of Optical Coatings at RhySearch, Buchs (SG)

Understanding Optical Coatings For Military Applications

ise J. A. Woollam Ellipsometry Solutions

Deep-etched high-density fused-silica transmission gratings with high efficiency at a wavelength of 1550 nm

Welcome MNT Conference 1 Albuquerque, NM - May 2010

Fabrication Technology, Part I

PHYS 534 (Fall 2008) Process Integration OUTLINE. Examples of PROCESS FLOW SEQUENCES. >Surface-Micromachined Beam

Mostafa Soliman, Ph.D. May 5 th 2014

EE40 Lec 22. IC Fabrication Technology. Prof. Nathan Cheung 11/19/2009

Single-digit-resolution nanopatterning with. extreme ultraviolet light for the 2.5 nm. technology node and beyond

micro resist technology

Semiconductor Technology

Process Flow in Cross Sections

Microstructure of Electronic Materials. Amorphous materials. Single-Crystal Material. Professor N Cheung, U.C. Berkeley

Journal of Advanced Mechanical Design, Systems, and Manufacturing

Metallization deposition and etching. Material mainly taken from Campbell, UCCS

Supporting Online Material for

Lect. 2: Basics of Si Technology

General Introduction to Microstructure Technology p. 1 What is Microstructure Technology? p. 1 From Microstructure Technology to Microsystems

KGC SCIENTIFIC Making of a Chip

About us. Capabilities

Supporting Information: Model Based Design of a Microfluidic. Mixer Driven by Induced Charge Electroosmosis

Fabrication Process. Crystal Growth Doping Deposition Patterning Lithography Oxidation Ion Implementation CONCORDIA VLSI DESIGN LAB

16.2 Scanning Infrared Spectrometers

Atomic Layer Deposition(ALD)

micro resist technology

Processing guidelines. Negative Tone Photoresists mr-ebl 6000

CMOS Technology. Flow varies with process types & company. Start with substrate selection. N-Well CMOS Twin-Well CMOS STI

Technology process. It s very small world. Electronics and Microelectronics AE4B34EM. Why is the integration so beneficial?

L5: Micromachining processes 1/7 01/22/02

EE 143 CMOS Process Flow

Measurement of thickness of native silicon dioxide with a scanning electron microscope

EUV Transmission Lens Design and Manufacturing Method

Isolation Technology. Dr. Lynn Fuller

NIR High-Efficiency Subwavelength DiEractive Structures In Semiconductors.

4. Thermal Oxidation. a) Equipment Atmospheric Furnace

Chapter 3 CMOS processing technology

ECE321 Electronics I

Lecture 5: Micromachining

Physical Vapor Deposition (PVD) Zheng Yang

Lecture 19 Microfabrication 4/1/03 Prof. Andy Neureuther

Optical Coatings. Phone: Fax: Domostroitelnaya str St. Petersburg, Russia

Doping and Oxidation

UV15: For Fabrication of Polymer Optical Waveguides

5.8 Diaphragm Uniaxial Optical Accelerometer

Ultra High Barrier Coatings by PECVD

Processing guidelines. Negative Tone Photoresist Series ma-n 2400

Introduction to CMOS VLSI Design. Layout, Fabrication, and Elementary Logic Design

Examples of dry etching and plasma deposition at Glasgow University

Semiconductor device fabrication

Lecture 5. SOI Micromachining. SOI MUMPs. SOI Micromachining. Silicon-on-Insulator Microstructures. Agenda:

Introduction to Micro/Nano Fabrication Techniques. Date: 2015/05/22 Dr. Yi-Chung Tung. Fabrication of Nanomaterials

Effect of γ irradiation on optical components

IC/MEMS Fabrication - Outline. Fabrication

Microstructure, morphology and their annealing behaviors of alumina films synthesized by ion beam assisted deposition

Microfabrication of Integrated Circuits

Complexity of IC Metallization. Early 21 st Century IC Technology

The Physical Structure (NMOS)

Fabrication of sawtooth diffraction gratings using nanoimprint lithography

COMMERCIAL PRODUCTS GROUP. World Leader in High Performance, Ultra-Durable Thin Film Coatings

Major Fabrication Steps in MOS Process Flow

EE 5344 Introduction to MEMS. CHAPTER 3 Conventional Si Processing

Low-cost, deterministic quasi-periodic photonic structures for light trapping in thin film silicon solar cells

Chapter 2 Manufacturing Process

Solutions with Light. Energy and environment, Information and communication, Healthcare and medical technology, Safety and mobility.

Introduction to Nanoscience and Nanotechnology

Supporting Information

SUPPLEMENTARY INFORMATION

Fabrication of Nanoscale Silicon Membranes on SOI Wafers Using Photolithography and Selective Etching Techniques:

Chemical Vapor Deposition

Precision Optical Engineering

Advanced Polymers And Resists For Nanoimprint Lithography

Crystallographic Characterization of GaN Nanowires by Raman Spectral Image Mapping

Simultaneous Reflection and Transmission Measurements of Scandium Oxide Thin Films in the Extreme Ultraviolet

3. Overview of Microfabrication Techniques

Semiconductor Manufacturing Process 10/11/2005

FABRICATION OF CMOS INTEGRATED CIRCUITS. Dr. Mohammed M. Farag

EUV Transmission Lens Design and Manufacturing Method

Microfabrication of Heterogeneous, Optimized Compliant Mechanisms SUNFEST 2001 Luo Chen Advisor: Professor G.K. Ananthasuresh

Dow Corning WL-5150 Photodefinable Spin-On Silicone

Micro-Nano Fabrication Research

Basic&Laboratory& Materials&Science&and&Engineering& Micro&Electromechanical&Systems&& (MEMS)&

Materials Characterization

CHAPTER 5 GROWTH OF POTASSIUM TETRA BORATE (K 2 B 4 O 11 H 8 ) SINGLE CRYSTALS BY LOW TEMPERATURE SOLUTION GROWTH METHOD AND ITS CHARACTERISATION

Transcription:

State of the art in silicon immersed gratings for space - Aaldert van Amerongen, Hélène Krol, Catherine Grèzes-Besset, Tonny Coppens, Ianjit Bhatti, Dan Lobb, Bram Hardenbol, Ruud Hoogeveen

Climate research by SWIR spectroscopy from space CO 2, CH 4 and H 2 O and HDO observable in 1.6-2.4 m range SWIR 1 at 1.6 micrometer (CO 2, CH 4 ) SWIR 2 at 2.0 micrometer (CO 2, H 2 O) SWIR 3 at 2.3 micrometer (CH 4, H 2 O, HDO, CO) 2

Outline Why immersed gratings? How are these gratings made? TROPOMI immersed grating Optical coatings Developments for future missions 3

Why immersed gratings? Atmospheric science asks for medium to high resolution spectroscopy in the SWIR wavelength range Classical grating spectrometers become too large Solution: immersed grating

Volume reduction

Silicon n=3.4, n 3 =40 transmission spectrum high purity mono crystals available

V-groove etching <111> <100> potassium hydroxide: etching along <100> 100 times faster than <111> Electron micrograph of etched grating

TROPOMI SWIR spectrometer optical layout 8

Immersed grating design period = 2500 nm order = -6 blaze = 55 aoi = 60 area = 45 45 mm 2 > 60% Pol. < 10% 9

Production Etch grooves in silicon Industry lithography technology High-end optical manufacturing technology Lean development strategy: concurrent development quick improvement cycles reduce waste

Manufacturing flow 11

TROPOMI Results realized remark profile perfect Efficiency curve as simulated Efficiency 65 % polarization 8 % ghosts none Stray light 10-5 Beyond PSF WFE 350 nm rms After focus correction 12

Efficiency Average = 65 % Polarization = 8 % 13

Stray light 1 10-5 1-5 5 10-5 -4 4

Optical coating technology Dual Ion Beam Sputtering DIBS deposition technique Ion sputtering of target and substrate yields dense coating insensitive to temperature and atmospheric conditions High level of control by realtime in-situ visible and infrared optical monitoring Paper 100 Hélène Krol at al 15

All tests were passed successfully. Spectral measurements and the results of the qualification tests show the reliability of these multi-dielectric and metal-dielectric functions f Optical coating technology design and performance Solution: Multilayer dielectric coating 16

All tests were passed successfully. Spectral measurements and the results of the qualification tests show the reliability of these multi-dielectric and metal-dielectric functions f Optical coating technology design and performance 2 On the third facet R<1.5% for 2280nm to 2410nm at 0 to 30 AoI in the silicon prism medium Solution: Metallic-dielectric multilayer coating 17

Optical coating technology qualification for space Thermal: 20 cycles -80 C; +50 C at ambient pressure and under N 2 atmosphere Humidity: 48 hours; 40 C and 95% humidity Adhesion: ISO 9211-3, test 02, level 02 Abrasion: ISO 9211-3, test 01, level 01 Protons: 40 MeV, and a flux of 2 10 10 cm -2 Gamma: 60 krads total radiation dose All tests were passed successfully 18

Ongoing developments for future climate missions Needs for the future 1.6 m, 2.0 m and 2.3 m >60%; polarization < 10% Low stray light and low WFE Wafer-to-prism bonding Faster, cheaper, better process Blazed gratings Increased application range High line-density First-order gratings for high efficiency and low stray light Arbitrary blaze angle prototype realized 200 nm lines and spaces prototype realized 19

Lean manufacturing flow Create prism Bond grating to prism 20

METIS: A Mid-infrared E-ELT Imager and Spectrograph METIS the third planned instrument for the E-ELT contains: Thermal infrared diffractionlimited imager integral field unit spectrograph (2.9-5.3 m) with a resolution of 100000 SRON leads consortium that manufactures a Demonstrator IG for METIS 140 mm grating Diffraction limited performance

Conclusion We are the suppliers for silicon IGs for space We have a reliable and efficient manufacturing flow for IG's TROPOMI gratings are at TRL 8: fully qualified Ongoing grating developments for future missions e.g. Sentinel 5 planned for TRL 5 early 2013 22

Lithography Polish silicon disk to high flatness and smoothness Deposit silicon nitride masking layer Spin on photoresist Pattern photoresist using UV lithography Plasma etch silicon nitride Remove photoresist, anisotropic etch of silicon in KOH Remove silicon nitride mask in HF

Mounting 24