Positive Tone Photosensitive Polyimide Photoneece PW-1200 series TORAY Industries, Inc.
Introduction of PW series PW1200 series is the improved grade for multi-layer and bump process use. PW-1200 series For buffer coat use +High Tg +Chemical Resistance PW-00 series +Photosensitivity +Photolithography +Alkaline Developability Non-photosensitive Polyimide Positive Photosensitive Polyimide Coating PW series
Features of PW-1200 series PW-1200 series are positive tone photosensitive polyimide coatings with high glass transition temperature, high chemical resistance, and the following characteristics. (1)Good Film Performance (2) Wide Cure Process Window (3)Good Photolithographic Performance (4)Good Solution Stability (5) Thick Film Applicable
Comparison of Film Performance of PW-00 with PW-1200 PSPI name Curing Condition PW-1200 250 1 320 1 PW-00 250 1 320 1 Mechanical Properties Tensile Strength Elongation Young s Modulus 140MPa 15% 3.7GPa 146MPa 20% 3.7GPa Impossible to measure 130MPa 30% 3.5GPa 5% Weight Loss 356 o C 435 o C 328 o C 458 o C Temperature Thermal Properties 1% Weight Loss Temperature 309 o C 390 o C 302 o C 395 o C Tg (TMA) 230 o C 305 o C Impossible 270 o C to measure
Film Performance of PW-1200 PSPI name PW-1200 Curing Condition 250 1h 320 1h 350 1h 380 1h 400 0.5h 450 0.5h Mechanical Properties Tensile Strength Elongation Young s Modulus 140MPa 15% 3.7GPa 146MPa 20% 3.7GPa 149MPa 20% 3.8GPa 140MPa 20% 3.7GPa 140MPa % 3.8GPa 140MPa % 3.7GPa 5% Weight Loss 356 o C 435 o C 455 o C 475 o C 485 o C 527 o C Temperature Thermal Properties 1% Weight Loss Temperature Tg (TMA) 309 o C 230 o C 390 o C 305 o C 400 o C 305 o C 418 o C 305 o C 426 o C 305 o C 465 o C 3 o C
Chemical Resistance of PW-1200(1) Solvent resistance cure condition solvent 250 60min(N2) PW-00 PW-1200 ethyl lactate 30s butyl acetate 30s PGMEA 120s 25%NaOH H2SO4/H2O2/H20=1/2/24 Resist stripper cure condition treatment condition 400 30min(N2) 96 40min PI thickness(μm) initial KOH base NMP-MMEA PW-00 6.28 4.08(Swelling) 0(Dissolved) PW-1200 6.8 6.79 4.05
Chemical Resistance of PW-1200(2) Chemicals Condition Resullt N-methylpyrrolidone RT 15min No change Solvent gamma-butylolactone RT 15min No change Ethyl lactate RT 15min No change Acetone RT 15min No change PGMEA RT 15min No change Resist stripper DMSO/monomethanolamine 80C 30min % thickness decresase Alkali 25%NaOH 40C min No change % KOH 40C min No change Etchant H2SO4/H2O2 40C min No change 1% HF RT 5min No change Flux Senjyu Deltalux 533 290C 20sec No change Cleaner Arakawa Pine-arfa 40C 30min No change Polyimide cure condition; 140 60min+350 60min
Patterning Process of PW-1200 for 5μm Thickness after 350 o C Cure Spincoat Prebaking Exposure Development 700rpm for sec and 2400rpm for 30sec 120 o C 3min (Hot plate) (Thickness:7.90 μm) 250 mj/cm 2 (g-line, i-line stepper) 120 sec. Paddle development (Thickness:6.67 μm) (2.38% TMAH solution) Curing 140 o C for 60min+350 o C for 60min (N 2 ) (Thickness:5.12 μm)
Patterning process of PW-1200 by Mark-7 (TEL) 1. PSPI coat (Mark 7) C/S Dehydro-Bake (DHP) 230 X 60 s COL 23 X 60 s Coater Recipe COAT STEP Time Rotation Accel Dispence (sec) (rpm) (rpm/sec) Pre-Bake (HP) 120 X180 s 1.0 200 00 0 2 5.0 0 00 0 COL 23 X 60 s 3.0 700 2000 0 4 30.0 27 00 0 C/S 5 2.0 0 00 0 Dispence PSPI at step 1 2.Exposure i-line Stepper (GCA 8000 DSW WAFER STEPPER) Exposure time 600 msec (300mJ/cm 2 ) focus 0 μm 3.Development(Mark 7) C/S Develop recipe STEP Time Roatation Accel Dispence DEV (sec) (rpm) (rpm/sec) 1 1.0 00 000 0 C/S 2 3.0 00 000 1 7 3 1.0 500 000 1 7 4 1.0 0 000 1 7 5 4.0 30 000 1 7 6 51.0 0 000 5 7 3.0 00 000 1 7 8 1.0 500 000 1 7 9 1.0 0 000 1 7 4.0 30 000 1 7 11 46.0 0 000 5 12 5.0 0 000 5 13 5.0 500 000 3 4 9 14 5.0 2000 000 3 4 9 15.0 3000 000 0 Developer:(TMAH 2.38%) Flow rate:0.6 L/min Rinse (water) Flow rate:1.2 L/min Exhaust:60 Pa Nozzle:Stream nozzle Thickness(μm) Rotation speed vs. Film thickness after PB 15 y = 8454.3x -0.8755 5 0 00 1500 2000 2500 3000 3500 4000 Rotation(rpm) 4.Cure Appratus:Koyo-Lindberg INH-21CD Condition :r.t. 140 30 min 350 60 min r.t. (slope 3.5 /min) Oxygen concentration:less than 0 ppm(nitrogen gas purge)
Patterning Process of PW-1270 for μm Thickness after 350 o C Cure Spincoat Prebaking Exposure Development 700rpm for sec and 2200rpm for 30sec 120 o C 3min (Hot plate) (Thickness:14.34μm) 50mJ/cm 2 (g-line, i-line stepper) 40 sec 3 Paddle development (Thickness:13.39μm) (2.38% TMAH solution) Curing 140 o C for 30min+350 o C for 60min (N 2 ) (Thickness:9.91 μm) PW-1270 is high viscosity version of PW-1200
Patterning process of PW-1270 by Mark-7 (TEL) 1. PSPI coat (Mark 7) C/S Dehydro-Bake (DHP) 230 X 60 s COL 23 X 60 s Coater Recipe COAT STEP Time Rotation Accel Dispence (sec) (rpm) (rpm/sec) Pre-Bake (HP) 120 X180 s 1.0 200 00 0 2 5.0 0 00 0 COL 23 X 60 s 3.0 700 2000 0 4 30.0 2200 00 0 C/S 5 2.0 0 00 0 Dispence PSPI at step 1 2.Exposure i-line Stepper (GCA 8000 DSW WAFER STEPPER) Exposure time 20 msec (50mJ/cm 2 ) focus 0 μm 3.Development(Mark 7) C/S Develop recipe STEP Time Roatation Accel Dispence DEV (sec) (rpm) (rpm/sec) 1 1.0 0 000 0 C/S 2 3.0 00 000 1 7 3 5.0 20 000 1 7 4 30.0 0 000 5 5 2.0 0 000 5 6 3.0 00 000 1 7 7 5.0 20 000 1 7 8 30.0 0 000 5 9 2.0 0 000 5 3.0 00 000 1 7 11 5.0 20 000 1 7 12 30.0 0 000 5 13 2.0 0 000 5 14 5.0 500 000 3 4 9 15 5.0 00 000 3 4 9 16.0 3000 000 0 17 1.0 0 000 0 Developer:(TMAH 2.38%) Flow rate:0.6 L/min Rinse (water) Flow rate:1.2 L/min Exhaust:60 Pa Nozzle:Stream nozzle Thickness(μm) Rotation speed vs. Film thickness after PB 25 20 y = 16876x -0.9208 15 5 0 00 1500 2000 2500 3000 3500 4000 4500 5000 Rotation(rpm) 4.Cure Appratus:Koyo-Lindberg INH-21CD Condition :r.t. 140 30 min 350 60 min r.t. (slope 3.5 /min) Oxygen concentration:less than 0 ppm(nitrogen gas purge)
Pattern Profile of PW-1200 after 350 o C Cure (5 μm Thickness after Curing) 5μm L&S μm L&S Exposure: i-line Stepper (GCA DSW-8000:NA=0.42) Dose: 300 mj/cm 2 Thickness:5.1μm after Curing on Si
Critical Dimension of PW-1200 after Development 12 8 6 4 2 0 V4-2 Mask Size 5μm Top Bottom 150 200 250 300 350 Process Condition Pre-baking 120 3min (proximity) (Thickness 7.90μm) Exposure tool i-line stepper Development 120sec. Paddle (2.38%TMAH solution) (Thickness 6.67μm) 16 14 12 8 6 4 Mask Size μm Top Bottom 150 200 250 300 350 26 24 22 20 18 16 14 Mask Size 20μm Top Bottom 150 200 250 300 350
Mask Linearity of PW-1200 after Development V4-2 Bottom Size V4-2 Top Size 30 25 20 15 5 0 150 200 250 300 350 20μm Mask μm Mask 5μm Mask 30 25 20 15 5 0 150 200 250 300 350 20μm Mask μm Mask 5μm Mask
Critical Dimension of PW-1200 after Curing V4-2 キュア Mask Size 5μm 12 8 6 4 2 0 Top Bottom 150 200 250 300 350 400 Curing Condition Apparatus INH-21CD (Koyo Thermosystem) Heating 140 60min+350 60min (slope: 3.4 /min) Oxygen under 300ppm (Nitrogen gas purge) (Thickness 5.12μm) V4-2 Mask Size μm V4-2 Mask Size 20μm 16 14 12 8 6 4 Top Bottom 150 200 250 300 350 400 26 24 22 20 18 16 14 Top Bottom 150 200 250 300 350 400
Mask Linearity of PW-1200 after Curing Bottom Size 30 25 20 15 5 0 150 200 250 300 350 400 20μm Mask μm Mask 5μm Mask Top Size 30 25 20 15 5 0 150 200 250 300 350 400 20μm Mask μm Mask 5μm Mask
Adhesion of PW-1200 to Substrate (Si and SiN) Final Curing Temperature Oxygen 250 350 400 450 (ppm) PCT treatment time(hr.) 0 50 0 0 50 0 0 50 0 0 50 0 1 OK OK OK OK OK OK OK OK OK OK OK OK 0 OK OK OK OK OK OK OK OK OK OK OK OK 250 OK OK OK OK OK OK OK OK OK OK OK OK 000 OK OK OK OK OK OK OK OK OK ーーー Cure :Koyo-Thermo Systems CLH- PCT :121 C, 2 atm
Solder Flux Resistance of PW-1200 (1) Positive-PSPI Row # Thickness Polyimide Curing Condition PW-1200 Flux Resistance Flux Name Curing Temp. O2 Concentration Treatment Condition Deltalux 533 Deltalux 529D-1 um Time ppm Surfce Change Surfce Change 1 5 Crack Crack 2 7 500 3 00 320 60min 4 5 Crack Crack 5 9 500 Crack Crack 6 00 Crack Crack 7 5 8 7 500 9 00 350 60min 230 65sec 5 11 9 500 12 00 13 5 14 7 500 15 00 380 60min 16 5 17 9 500 18 00 Solder Flux: Senju Metal Industry Co., Ltd.
Solder Flux Resistance of PW-1200 (2) Polyimide Curing Condition Flux Resistance Row # Positive-PSPI PW-1200 Flux Name Thickness Curing Temp. O2 Concentration Treatment Condition Deltalux 533 Deltalux 529D-1 um Time ppm surfce change surfce change 19 5 Crack Crack 20 7 500 Crack Crack 21 00 Crack Crack 320 60min 22 5 Crack Crack 23 9 500 Crack Crack 24 00 Crack Crack 25 5 26 7 500 27 00 350 60min 270 130sec 28 5 Crack Crack 29 9 500 30 00 31 5 32 7 500 33 00 380 60min 34 5 35 9 500 36 00 Solder Flux: Senju Metal Industry Co., Ltd.