Guénaël RIBETTE. General Director

Guénaël RIBETTE General Director

I will explain you Different sketches in relation with current thermal applications in following Segments Semiconductor Fiber optic Automotive Aerospace & Defense Telecomunications Electronic Test Sensors Advanced Technology

- ALD nano-laminate can help to cool down electronic devices in a better way than existing technologies, and also how ALD can mitigate Corrosion and Tin Whisker Issues of Printed Circuit Board Assemblies, - RTP oven can be used to heat your wafers with amazing ramp up to 250 K/s, - Probe Shield Prober in atmospheric can heat up to +300 C or cool wafers down to -65 C in order to characterize your systems, - Cryo-probers can go down to 4K or +300 C under high vacuum, to test electrically your sensors, using or not vibrations for optical measurement, - How easily produce locally on your systems or printed circuit board assemblies hot & cold in a range of -80 +225 C, without noise, - Device Bonder can make in situ reflow or mass reflow of C2C or C2W with high post bond accuracy,

But first, what is ALD?

What can you find in the ALD Reactor?

ALD Process advantages

ALD Process working

1) Nanolaminate to cool down electronic devices Nano-lamination is the production of materials that are fully dense, build with atomic resolution, ultra-fine grained solids that exhibit a high concentration of interface defects. The properties of fabricated Nano laminates depend on their compositions and thicknesses.

Conventional CVD Methods => Source Controlled Deposition

Conventional Heatsink INCREASE DEVICE WEIGHT AND THICKNESS Needs adhesives.

ALD Solution for Heatsink Surface Controlled Deposition Provide highest uniformity Precise thickness control down to nanometer level Increase the surface in contact with the heatsink thanks to the perfect atomic resolution Conformal over the smallest nanoscale features Crack defect and Pinhole free films by nature Digitally repeatable process and low process temperatures Atomic level control of film deposition : Graded / mixed/ doped layers : nanolaminates

Phonon superhighway principe Assumed phonon reflection pattern inside the ALD nanolaminate on the heatsink *Depend on substrate *20 C decrease in spot temperature has been shown *Enable smaller number of thermal interfaces *lighter materials with less internal thermal conductivity can be used Or * Thermal conductivity of existing materials can be made better.

2) ALD can also mitigate Corrosion and Tin Whisker Issues of Printed Circuit Board Assemblies Tin Whiskers grown from Pbfree solder surface Whiskers on unprotected electronics

Humidity External particles Liquid and gaseous impurities Heat Time Reasons for corrosions Dentrites on component & metallised holes

Precusors of Tin Whiskers Filament Odd Shape Eruption ( OSE)

Precusors of Tin Whiskers Spiral Filament Kinked Filament

Precusors of Tin Whiskers Hillock or Nodule

100Cr6 Steel in NSS tests (Neutral Salt Spray) PVD coated before the NSS test PVD coated after 2 hours in the NSS test PVD+ALD coated before the NSS test PVD+ALD coated after 670 hours in the NSS test

3) ALD + Parylene Coating 21µm STORAGE 6 MONTHS Tin-Copper ( Sn-Cu) COUPONS 1) Non treated Sn-Cu sample 2) ALD treated but not coated

SUMMARY 2 With ALD process, no filament type whiskers on coupons, even for those with long time between plating and ALD coating. Shorter time ( between plating and coating) provides the good results in term of protection. Even In the coupons ALD Coated, we can observe after 6 months, whiskers, but when ALD process is mixt with Parylene coating, protection seems optimum. Coating of AL2O3 + Parylene seems today one of the best possibility to protect all electronic system working in very harsh environment, but also during the storage time. New R/D research provided recently a way to reach perfection. Due to the patent ongoing on this ALD process, we invite you to contact Microtest for further discussion and demo.

3) RTP oven can be used to heat your wafers with amazing ramp up Application RTP for : Solar Wafer Annealing Crystallization and densification Low K dielectrica Solicide Formation Contact Alloying Oxidation and Nitridation III-V Ohmic allowing Implantation / Contact annealing

RAPID THERMAL PROCESSING PRINCIPE T Control by Thermocouple Type K 4 Max N2 for cooling process chamber

RTP COOLING PRINCIPE : HEAT EXCHANGER 10 KW Best system is to use cold water, 12 20 C, 5 bars, from the building

RTP COOLING PRINCIPE : ALTERNATIVE WAYS The chiller : production of 4 KW of cold water in close loop, Remotely controlled by RTP System

4 Gas lines Max N2, O2, Ar, H2/N2 RTP OPTIONS Process Chamber Cooling by HE or Chiller MASSFLOW MFC Vacuum 10-3 hpa Vacuum 10-6 hpa Additional Thermocouple Process Control For T, Gas flow, Cooling, Pressure Graphite Plate SiC Coated Quartz ring 50 mm Quartz ring 75 mm Quartz ring 100 mm

PROGRAM EXAMPLE

- 4) Probe Shield Prober in atmospheric can heat up to +300 C or cool wafers down to -65 C

Thermal chuck for -65 C up to 200 C Close area shielded T Controller Chiller -80 C +200 C Hygrometry control N2 Blowing Thermal Chuck in Cu

Probe Shield -65 C up to 200 C

5) Cryo-probers can go down to 4K up to +300 C under high vacuum, to test electrically your sensors, using or not vibrations for optical measurement,

Backside Cryo Chamber

Probes Tips on Cryo Chuck

Cryo Chuck N2 Gas Output Liquide Nitrogen enters in

Cryo Chuck System

Cryo Chamber

Cryo Prober

Cryo Prober installed in ENS Lab in Paris in January 2017

6) How to easily produce locally on your systems hot & cold in a range of -85 +225 C, without LN2, CO2, noise? FILTER + DRYER AIR CHILLER + DC INVERTER DC HEATER T PROCESS CONTROL INPUT AIR FLOW T SENSORS THERMAL CAP THERMAL HEAD

NEW THERMAL T TESTING FOR RAPID FAILURE ANALYSIS

NEW THERMAL T TESTING ADVANTAGES Continuous Air flow up to 20 SCFM @-85 C to +225 C -55 C to 125 C / +125 C down to -125 C in less than 10 s Ultra Stable DC temperature control DC Chiller for Low audible Noise Active Control for T Profiling, Cycling, thermal shock Testing directly at application on the bench top Frost Free Operation / Built in Air Dryer No LN2 or CO2 Required and CFC Free Save 50% on electricity / Energy/ Power. Easy Roll Around wheels for Portability

7)Device Bonder can make in situ reflow or mass reflow of C2C or C2W easily with high post bond accuracy, OR CHIP TO CHIP CHIP TO WAFER 55

LOCAL or IN SITU REFLOW PROCESS UP TO 350 C Chip Substrate UP TO 420 C Courtesy: TU Dresden

MASS REFLOW PROCESS CHIP Self Alignment SUBSTRATE UP TO 420 C Courtesy: TU Dresden

THERMO-COMPRESSION UP TO 350 C Chip Substrate UP TO 420 C Thermocompressed Au Bumps Courtesy: Alcatel

PRESENTATION OF BONDING MACHINE Main Camera Thermo - Bonding Arm T Controller Process Control Camera Motorized Table XY Thermo Chuck & Stamping or Deeping System ESD protection Control Panel

THERMAL CHUCK FOR SUBSTRATE UP TO 400 C N2 OR FORMING GAS OR FORMIC ACID VAPOR INJECTION CAPABILITIES

THERMAL HEATER FOR CHIP UP TO 400 C THERMAL HEATER THERMAL TOOLING

BONDER PP6 SPECIFICATIONS Chip sizes 100*100 µm up to 40 x 40 mm ( more in option) Substrate sizes up to 300 x 500 mm XY Table, motorized, 260 x 120 mm with 1 µm resolution Control by Joystick, direct or pulse. Bonding Force from 10 g up to 700 g Option up to 5 kg Eutectic / Thermocompression processes Ultrasonic option Flip chip capability Dispense glue or paste Scrubbing in X&Y UV light for polymerisation capability ( using flex UV light) Stamping option Dipping option Automatic Alignment with Theta control in option All process under control of PC

PROBERS DC- HF CRYO - VACUUM Thermal chuck - 65 / +300 C PRESS 12000N LITHOGRAPHY TURBO PUMP ELECTRIC SAW MICROMANIPULATORS PROBE SHIELD -65 / +300 C SUBSTRATE BONDER ALD CLUSTERS MICROTEST THANK YOU FOR YOUR ATTENTION PICK & PLACE VPO - RSO RTP - RSS TOOLS AND CONSUMABLES THERMAL CONDITIONNER -85 C up to +225 C SPIN COTATER DEVELOPER WET PROCESS SCRIBER 100 & 200 mm OVENS FURNACES INCUBATORS. EVAPORATORS

Guénaël RIBETTE General Manager Guenael.ribette@microtest-semi.com +33 6 84 65 36 57 http://www.microtest-semi.com/