TSV CHIP STACKING MEETS PRODUCTIVITY EUROPEAN 3D TSV SUMMIT 22-23.1.2013 GRENOBLE HANNES KOSTNER DIRECTOR R&D BESI AUSTRIA
OVERVIEW Flip Chip Packaging Evolution The Simple World of C4 New Flip Chip Demands TCB Requirements for TSV Chip Stacking TCB Bonder Development Architectural considerations Innovation & Implementation Status and Outlook TCB Productivity Evaluations
FLIP CHIP PACKAGING EVOLUTION THE SIMPLE WORLD OF C4
FLIP CHIP PACKAGING EVOLUTION NEW FLIP CHIP DEMANDS MARKET DRIVERS integration density power consumption performance ultra low-k wide I/O low mechanical strength 3D & fine pitch gradient bonding copper pillar & thin die Thermo Compression Bonding Interconnect Technology
FLIP CHIP PACKAGING EVOLUTION NEW FLIP CHIP DEMANDS The world of TC Panel Singulated (Boat) Wafer Side by Side Strip Stacked Applications 2D TC 2.5D TSV 2.5 & 3D 3D TSV TC TC NCP Technologies TC CUF TC NCF TC MUF Upstream Dispensing Inert In-Situ Dispensing Fluxing C2S C2C C2W Multi Chip
FLIP CHIP PACKAGING EVOLUTION TCB REQUIREMENTS FOR TSV CHIP STACKING Through Silicon Via s Thin Die handling Cu-Pillars & CUF Bond Control I/O-Density & NCF Bondforce 250N Fine Pitch ± 2µm Placement Accuracy Cu-Pillars & Stacking 2µm@10mm Co-Planarity Insitu Soldering & Productivity Demands 200 C/s Heating & 100 C/s Cooling
FLIP CHIP PACKAGING EVOLUTION TCB REQUIREMENTS FOR TSV CHIP STACKING 3 TCB Core Capabilities are essential for yield! TCB Accuracy Core Capability #1 Co- Planarity Core Capability #2 Bond Control Core Capability #3
TCB BONDER DEVELOPMENT ARCHITECTURAL CONSIDERATIONS Rigid & Heavy Elastic & Lightweight Accuracy Co-Planarity Accurate Axis Appropriate Alignment system Thermal Drift Compensation Rigid System Accurate Axis Appropriate Alignment system Thermal Drift Compensation Mechatronic Co-planarity Control Bond Control z-stiffness Active z-position Control Productivity Limited by z-stiffness & Weight Fast Temp. Ramping Lightweight Construction Fast Temp. Ramping Flexibility per footprint Architectural Limits Comparable to C4 FC Bonder
TCB BONDER DEVELOPMENT INNOVATION & IMPLEMENTATION CO-PLANARITY CONTROL Tilt due to elastic gantry deformation Kinematic Restraint System Mechatronics Solution with Coplanarity control
TCB BONDER DEVELOPMENT INNOVATION & IMPLEMENTATION 250N BONDHEAD
TCB BONDER DEVELOPMENT INNOVATION & IMPLEMENTATION Active Gas cooling Cooling fluid (e.g. air) Heater Tool Heater Tool Chip Chip
Temperatur [ c] TCB BONDER DEVELOPMENT INNOVATION & IMPLEMENTATION Cooling ramp: -90 /sec 450 400 350 300 250 200 150 100 50 0 0 5 10 15 20 Time [s] Temp P2 [ C] Temp P3 [ C] Temp P4 [ C] Temp P5 [ C]
PICK STATUS AND OUTLOOK TCB PRODUCTIVITY - ACTUAL Typical TC P&P cycle (TC process time: 4s) T [ C] max ramping: +100 C/s tool temperature 221 C 260 C max cooling: -50 C/s WAIT interval can be used for inspection 160 C 180 C 160 C Bond (TC process) MOVE REL MOVE WAIT MOVE ULC MOVE 1 2 3 4 0 1 2 3 4 5 5.6 6 7 t [s] Phase 1: Bond (TC process) Phase 2: Move to rel. adjust Rel. Adjust Move to Pick Wait Phase 3: Pick Move to ULC Phase 4: ULC Move to Bond *) without inspections
PICK STATUS AND OUTLOOK TCB PRODUCTIVITY UPSIDE POTENTIAL Upside UPH: 2800 sprint UPH for machine T [ C] 160 C max ramping: +200 C/s 221 C 260 C tool temperature max cooling: -100 C/s 160 C 2.5 s cyle time / b. head based on +200/-100 C/s ramping Bond (TC process) MOVE REL MOVE MOVE ULC MOVE 1400 UPH / bond head 1 2 3 4 0 0.5 1 1.5 2 2.5 t [s] Phase 1: Bond (TC process) Phase 2: Move to rel. adjust Rel. Adjust Move to Pick Phase 3: Pick Move to ULC Phase 4: ULC Move to Bond *) without inspections
STATUS AND OUTLOOK EVALUATIONS 1st TC-Bonder Buyoff was very successful with first time dual head/single pass assembly of Multi Layer TSV stacks @ 50µ die thickness 2nd Evaluation is ongoing In total we talk to 27 companies. All are decided to utilize TCB technology sooner or later 12 OSATs 9 IDMs 2 Foundries 2 Fabless 2 Research Institutes 1 Material Supplier
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