BUILD TO PERFORMANCE RF Customized Ceramic Thin Film Filters

Similar documents
Features. = +25 C, 50 Ohm System

10 Manor Parkway, Suite C Salem, New Hampshire

Mobile Device Passive Integration from Wafer Process

Welcome to the KEMET Ceramic Capacitor Flex Crack Mitigation product training module. This module will review sources of stress in surface mount

curamik CERAMIC SUBSTRATES AMB technology Design Rules Version #04 (09/2015)

Die Thickness Effects in RF Front-End Module Stack-Die Assemblies

Chips Face-up Panelization Approach For Fan-out Packaging

RF System in Packages using Integrated Passive Devices

3.7GHz, Low Loss, 100MHz Bandwidth, Single Crystal, Aluminum Nitride on Silicon Carbide Substrate (AlN-on-SiC) BAW Filter

Thin-Film Products NANOWAVE Technologies Inc.

Welcome to Streamline Circuits Lunch & Learn. Design for Reliability & Cost Reduction of Advanced Rigid-Flex/Flex PCB Technology

System in Package: Identified Technology Needs from the 2004 inemi Roadmap

Low Temperature Co-fired Ceramics (LTCC) Multi-layer Module Boards

BROADBAND RFCMF 1220(0508) Series RoHS Compliance MULTILAYER COMMON MODE FILTER. For USB 2.0 / IEEE 1394 Application

Non-Hermetic Packaging of RF Multi-Chip Modules

TGV and Integrated Electronics

Embedding Passive and Active Components: PCB Design and Fabrication Process Variations

Introduction of CSC Pastes

Wire-Bond CABGA A New Near Die Size Packaging Innovation Yeonho Choi February 1, 2017

Long-term reliability of SiC devices. Power and Hybrid

Key words: microprocessor integrated heat sink Electronic Packaging Material, Thermal Management, Thermal Conductivity, CTE, Lightweight

Intel Pentium Processor W/MMX

3D Packaging- Synthetic Quartz Substrate and Interposers for High Frequency Applications. Vern Stygar #1, Tim Mobley* 2 # Asahi Glass Corporation

23 rd ASEMEP National Technical Symposium

Silicon Wafer Processing PAKAGING AND TEST

Selection and Application of Board Level Underfill Materials

PCB Technologies for LED Applications Application note

Advanced Analytical Techniques for Semiconductor Assembly Materials and Processes. Jason Chou and Sze Pei Lim Indium Corporation

How to select PCB materials for highfrequency

Extended-Frequency SMA Connectors

3M XYZ / Isotropic Electrically Conductive Adhesive Transfer Tape 9709

Microwave Plasma Processing

SGS-Thomson M17C1001 1Mb UVEPROM

Cal-Chip Electronics, Incorporated Thick Film Chip Resistors - RM Series

KGC SCIENTIFIC Making of a Chip

A novel measuring system for the metrological characterization of piezoresistive films at high temperature

Trench Structure Improvement of Thermo-Optic Waveguides

High Stability Resistor Chips (< 0.25 % at Pn at 70 C during 1000 h) Thick Film Technology

Reliability Qualification Report

Ultra High Precision Resistors

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

SECTION RADIO FREQUENCY SHIELDING ENCLOSURE RF Welded System

VTT TECHNICAL RESEARCH CENTRE OF FINLAND. LTCC Packaging & Smart System Integration Horten Kari Kautio

NiP Resistor Manufacturing Overview

PRODUCT SELECTOR GUIDE

Piezoelectric Polycrystalline (PZT) Components and Wafers

The Packaging and Reliability Qualification of MEMS Resonator Devices

Thin. Smooth. Diamond.

Nickel Temperature Sensors 1/12

Ferrite EMI Cable Cores

High Temperature Circuit Reliability Testing Updated February, 2003

Platinum Temperature Sensors

nicrom e l e c t r o n i c

FABRICATION AND CHARACTERIZTION OF ALN THIN FILM BULK ACOUSTIC WAVE RESONATOR. Qingming Chen. BS, Tsinghua University, P. R.

ISA-WELD // Precision resistors. BRS // Size Features

3M Electrically Conductive Adhesive Transfer Tape 9707

Transducers and Arrays for Medical

Failure Modes in Wire bonded and Flip Chip Packages

Wafer probe challenges for the automotive market Luc Van Cauwenberghe

Power Electronics Packaging Solutions for Device Junction Temperature over 220 o C

Rockwell R RF to IF Down Converter

PARYLENE ENGINEERING. For Longer Lasting Products

CONTENTS INTRODUCTION. Underfills... 11

Aerosol Jet International User Group Meeting. Metallization and Functional Structures by Aerosol Jet deposition

The 3D Silicon Leader

AVX High Power Resistive Products

Packaging Technologies for SiC Power Modules

Ajay Kumar Gautam [VLSI TECHNOLOGY] VLSI Technology for 3RD Year ECE/EEE Uttarakhand Technical University

Integrated Copper Heat Slugs and EMI Shields in Panel Laminate (LFO) and Glass Fanout (GFO) Packages for High Power RF ICs

State of the Art,Inc. High Reliability Thick & Thin Film Resistive Products

IMPLEMENTATION OF A FULLY MOLDED FAN-OUT PACKAGING TECHNOLOGY

High Frequency Circuit Materials Attributes John Coonrod, Rogers Corporation

Plasma Etching Rates & Gases Gas ratios affects etch rate & etch ratios to resist/substrate

Experience in Applying Finite Element Analysis for Advanced Probe Card Design and Study. Krzysztof Dabrowiecki Jörg Behr

Virtual Prototyping of a Microwave Fin Line Power Spatial Combiner Amplifier

High Efficiency UV LEDs Enabled by Next Generation Substrates. Whitepaper

PARAMETRIC STUDY OF FLAT SANDWICH MULTILAYER RADOME

PRELIMINARY. HTHA (Z1-Foil)

HTHA (Z1-Foil) Vishay Foil Resistors

Recent Advances in Die Attach Film

DETAIL SPECIFICATION SHEET

System-in-Package (SiP) on Wafer Level, Enabled by Fan-Out WLP (ewlb)

Quality in Electronic Production has a Name: Viscom. System Overview

Freescale Semiconductor Tape Ball Grid Array (TBGA) Overview

PEC (Printed Electronic Circuit) process for LED interconnection

High Transmittance Ti doped ITO Transparent Conducting Layer Applying to UV-LED. Y. H. Lin and C. Y. Liu

PROCESSING OF INTEGRATED CIRCUITS

Development of System in Package

Cost effective 300mm Large Scale ewlb (embedded Wafer Level BGA) Technology

Coatings. Ion Assisted Deposition (IAD) process Advance Plasma Source (APS) plasma-ion assisted Deposition. Coatings on Optical Fibers

Focus on Power: Advancements in Ceramic Capacitors. Topics. APEC 2011 Special Presentation MLCC Advancements in Ceramic Capacitors March 2011

Welding Processes. Consumable Electrode. Non-Consumable Electrode. High Energy Beam. Fusion Welding Processes. SMAW Shielded Metal Arc Welding

Dallas Semicoductor DS80C320 Microcontroller

Features Small size Low insertion loss High selectivity Hermetic seal. 1000MHz MHz. 1500MHz MHz. 1795MHz MHz.

Device Attachment Methods and Wirebonding Notes for RT/duroid and RO4000 Series High Frequency Laminates

Reliability of Interconnects in LED Lighting Assemblies Utilizing Metal Clad Printed Circuit Boards Stefano Sciolè BDM I.M.S.

2.4 GHz ISM Band Working Frequency

Transcription:

Vectron Thin Film Filters BUILD TO PERFORMANCE RF Customized Ceramic Thin Film Filters Anton Buchleitner, Vectron International

VECTRON Thin Film Filters bandwidth / MHz Features: 1 1 1 1 1 1.1.1.1.1.1.1 L-C Filters Discrete Crystal Filters Monolithic Crystal Filters Prec. High-Loss SAW Loss-Reduced SAW Low-Loss SAW Thin Film Filters 1 1 1 1, 1, 1, center frequency / MHz Small and mid-volume for e.g. Military & Space applications Extension of VECTRON s filter portfolio up to 35GHz Synergy with VECTRON s SAW-grade process technology Designed & manufactured in Europe 1% ITAR-free

VI Thin Film Filters - Strengths Thin Film Filters, Strengths: Small size Temperature stable Excellent design model accuarcy, good first pass success Excellent RF repeatability Excellent to manufacture: batch processed, no tuning of resonators

VI Thin Film Filters - Strengths Propietary ceramic substrate: High dielectric permittivityε r Low thermal coefficient of dielectric constant TCε r Improved matching of thermal expansion coefficient with PCB material Material Dielectric constant ε r to alumina based dielectric constant TCε r Size relative Thermal coefficient of filter design /ppmk -1 CF 25, 63% CG 67, 38% Alumina 9,9 1% 12 Material Coefficient of thermal expansion CTE /ppmk -1 CTE to RO 435B /ppmk -1 CF 9, -5, CG 9, -5, Alumina 6,5-7,5 RO 435B 14,

VI Thin Film Filters - Strengths Temperature stabilty compared to conventional ceramic substrate Shift of filter center frequency ~ 1x better than with alumina substrate Temperature Measurement: CF Material Temperature Measurement: Alumina -5-5 magnitude [db] -15-25 -4 C C C 2 C 4 C 6 C 8 C magnitude [db] -15-25 -4 C C C 2 C 4 C 6 C 8 C 4 45 5 55 6 65 frequency [MHz] 26 28 3 32 34 36 38 4 42 44 46 frequency [MHz]

Frontend: Clean room class 1K SAW-grade e-beam deposition technology Metalization systems: Standard Ti/Au Various alternatives qualified Highly accurate photo-lithography processes Excellent film thickness and line-width control and reproducibility No trimming processes required VI Thin Film Filters - Technology

VI Thin Film Filters - Technology Backend / Package solutions Customized / application-defined, e.g. Surface-mount: Filter chip is soldermounted and -connected Hybrid assembly: adhesive mounting / wire-bonding Connector- or through-hole type package solutions Shielded CSP-solutions for SMA and wire-bond S21 /db -4-5 -6-7 -8 12 12,5 13 13,5 14 14,5 15 15,5 16 16,5 17 17,5 18 frequency /GHz -5-15 -25-35 -4 S11 /db

VI Thin Film Filters - Design Design techniques Analytical draft Network simulation tools Electromagnetic Simulation Good knowledge of material parameters Dielectric permittivity Anisotropy Metal conductance Filter topologies Interdigital Edge coupled End coupled Edge / end coupled, V-shape Hairpin Dual mode resonator

VI Thin Film Filters - Design Design example Band pass filter 5.4 GHz Interdigital topology 7 poles S21 /db -4-5 -6-7 BPF 5,4 GHz +/- 7 MHz -5-15 -25-35 S11 /db -8-4 2 3 4 5 6 7 8 9 frequency /GHz

VI Thin Film Filters - Design Design example Band pass filter 1.6 GHz Interdigital topology 7 poles S21 /db BPF 1,62 GHz -5-15 -4-5 -25-6 -7-35 -8-4 1,2 1,3 1,4 1,5 1,6 1,7 1,8 1,9 2 frequency /GHz S11 /db

VI Thin Film Filters - Design Design example BPF 4,3 GHz Band pass filter 4.3 GHz Hair pin topology -5 7 poles -15 2nd harmonic supression S21 /db -4-5 -25 S11 /db -6-7 -35-8 -4-9 -45-5 2 2,5 3 3,5 4 4,5 5 5,5 6 6,5 7 7,5 8 8,5 9 9,5 1 frequency /GHz

VI Thin Film Filters - Design Design example Band pass filter 14,95 GHz Edge coupled topology V-shape 7 poles I/O 5 Ohm match S21 /db -4 BPF 14,95 GHz -5-15 S11 /db -5-25 -6-7 -35-8 -4 12 12,5 13 13,5 14 14,5 15 15,5 16 16,5 17 17,5 18 frequency /GHz

VI Thin Film Filters - Design Design example Band pass filter 3,5 GHz End coupled topology BPF 3,5 GHz -5 7 poles -15-4 S21 /db -5-6 -25 S11 /db -7-35 -8-4 -9-45 -5 26 27 28 29 3 31 32 33 34 35 36 frequency /GHz

VI Thin Film Filters - Mounting Mounting Techniques: Wire Bond Technique (recommended for frequency > 15 GHz) PC board RF (I/O) RF filter RF (I/O) wirebond housing floor conductive epoxy Filter Top Side Detail A Detail A Filter Top Side I/O bond pad Filter Bottom Side

Mounting Techniques (continued) Surface Mount Technology VI Thin Film Filters - Mounting

Mounting Techniques (continued) Surface Mount Technology (continued) VI Thin Film Filters - Mounting

VI Thin Film Filters - Shielding Filter Packaging and Shielding Printed Wire Board Covers (e.g. Rogers Material), for SMT mounting only Sheet metal cover, for SMT and wire bond technique as well (recessed to expose I/O) Shielding is left to the customer (next level of assembly) Printed wire board cover Sheet metal cover Customer shielding

VI Thin Film Filters - Shielding Effect of cover height Cover closer to substrate surface reduces bandwidth and increases insertion loss BPF 4,8875-5 -15 S21 /db -4-5 -6-25 S11 /db -7-35 -8-4 -9-45 -5 4 4,1 4,2 4,3 4,4 4,5 4,6 4,7 4,8 4,9 5 5,1 5,2 5,3 5,4 5,5 5,6 5,7 5,8 5,9 6 frequency /GHz

VECTRON Thin Film Filters Low-pass, high-pass, band-pass and band-stop (notch) filters available Center frequencies:.5 35GHz Relative bandwidth: 1 5% Technological approach similar to DLI s filters use of DLI s ceramic competence Excellent temperature stability: typical <5ppm/ C Extreme aging stability SPACE-grade solutions available ITAR Free! Design and Manufacturing in Germany!