Qualification Report T3 Mixer In CQG Package

Transcription

1 Qualification Report T3 Mixer In CQG Package

2 Table of Contents Page Introduction 6 CQG Package 8 Summary of Test Results 10 Summary of Performance Variation 10 Environmental / Operational Maximum Ratings 10 Environmental Test Plan 12 Electrical Test 14 Test Fixtures 14 MSL & Preconditioning 15 Performance Plots High Temperature Operation (HTO) 17 Performance Plots Highly Accelerated Temperature and Humidity Stress Test (HAST) 19 Performance Plots Autoclave (AC) 21 Performance Plots High Temperature Storage Life (HTSL) 23 Performance Plots Low Temperature Storage Life (LTSL) 23 Performance Plots Temperature Cycle (TC) 27 Marki Microwave Incorporated High Temperature Operation Highly Accelerated Temperature and Humidity Stress Test Autoclave High Temperature Storage Life Low Temperature Storage Life Temperature Cycle Table of Abbreviations MMI HTO HAST AC HTSL LTSL TC 2

3 Table of Figures Number Description Page(s) 1 Mechanical Drawing of CQG Package 8 2 Cross sectional drawing of typical QFN package with GaAs die 8 3 Custom Test Fixture (Soldered) 14 4 Annotated MSL & Preconditioning Reflow Profile 15 5 HTO Mean Conversion Loss Variation Plot 6 HTO Frequency & Cumulative Distribution of Conversion Loss Variation (single unit variation) 17 7 HTO LO Return Loss Comparison 18 8 HTO RF Return Loss Comparison 18 9 HTO IF Return Loss Comparison UHAST Mean Conversion Loss Variation Plot UHAST Frequency & Cumulative Distribution of Conversion Loss Variation (single unit variation) UHAST LO Return Loss Comparison UHAST RF Return Loss Comparison UHAST IF Return Loss Comparison Autoclave Mean Conversion Loss Variation Plot Autoclave Frequency & Cumulative Distribution of Conversion Loss Variation (single unit variation) Autoclave LO Return Loss Comparison Autoclave RF Return Loss Comparison Autoclave IF Return Loss Comparison HTSL Mean Conversion Loss Variation Plot HTSL Frequency & Cumulative Distribution of Conversion Loss Variation (single unit variation) HTSL LO Return Loss Comparison HTSL RF Return Loss Comparison HTSL IF Return Loss Comparison LTSL Mean Conversion Loss Variation Plot LTSL Frequency & Cumulative Distribution of Conversion Loss Variation (single unit variation) LTSL LO Return Loss Comparison LTSL RF Return Loss Comparison LTSL IF Return Loss Comparison Temperature Cycle Mean Conversion Loss Variation Plot Temperature Cycle Frequency & Cumulative Distribution of Conversion Loss Variation (single unit variation) Temperature Cycle LO Return Loss Comparison Temperature Cycle RF Return Loss Comparison Temperature Cycle IF Return Loss Comparison 28 3

4 Table of Tables Number Description Page(s) 1 Qualified MMI Part Numbers 8 2 Summary of Test Results 10 3 Summary of Performance Variation 10 4 Environmental / Operational Maximum Ratings Device 10 5 Environmental / Operational Maximum Ratings Package 10 6 Test Method CQG Substrate & Device Operation 12 7 Test Method CQG & Device Packages 12 8 RF Test Frequency Bands and Input Power 14 9 Custom Test Fixtures Materials Used HTO Test Parameters UHAST Test Parameters Autoclave Test Parameters HTSL Test Parameters LTSL Test Parameters TC Parameters 27 4

5 Introduction 5

6 Our reliability study combines device & package test methods to produce a comprehensive view of a typical component s mechanical and electrical integrity over its lifetime. The conclusions drawn from this study establishes Marki Microwave s CQ(G) package s ability to withstand mechanical stresses that were imposed by the test methods. It also provides a basis of confidence in CQ(G) package s ability to support the specified electrical performance of a typical Marki Microwave T3 mixer device contained within. The test plan used to perform this study provides a basis of confidence in CQ(G) and T3 mixer device use by following two courses: 1) Use under MMI s rated electrical specifications and elevated temperature for a prolonged period 2) Use of other broadly accepted test methods that highlight the efficacy of specific mechanical features of CQ(G) & T3 mixer device packages and soldered connections This study is based on the application of JEDEC standards. The conditions applied to each standard were chosen to encourage our customers increased confidence in our product s efficacy under environmental conditions that exceed typical use cases. 6

7 CQG Package 7

8 The representative assembly used in our study was MMI s CQG (Au finish) package containing a T3 mixer device..050 [1.27].320 [8.13] L.400 [10.16].300 [7.62] T307LCQG MADE IN USA D/C I R.050 [1.27].220 [5.59] Ø.060 Thru, 4 PL Plastic Cover.13 Max [3.3].160 [4.06].200 [5.08] Figure 1 An outline of T3 08CQG. Alternate dimensioning: [ mm ] Plastic Cover Soldered Connection Mixer Sealing Epoxy Circuit Substrate Figure 2 A cross sectioned drawing of a typical CQ(G) package with an undefined mixer assembly and soldered connections to the package substrate. Table 1 Qualification Vehicle Marki Microwave Part Number T3 03CQ(G) T3 04CQ(G) T3 05CQ(G) T3 06CQ(G) T3 07CQ(G) Qualified By Similarity T3 and legacy mixer assemblies of frequency bands up to 10GHz are qualified by similarity of construction to withstand all environmental stress contained in this report. The severity of any single environmental condition or combination thereof is not to exceed what s explicitly defined. 8

9 Summaries & Declarations 9

10 Summary of Test Results Test Method Qty In Qty Out Fails Fail Criteria High Temperature Operation (HT) >1dB change in mean conversion loss Unbiased Highly Accelerated Stress Test (UHAST) >1dB change in mean conversion loss High Temperature Storage Life (HTSL) >1dB change in mean conversion loss Low Temperature Storage Life (HTSL) >1dB change in mean conversion loss Accelerated Moisture Resistance (Autoclave) >1dB change in mean conversion loss Temperature Cycle (TC) >1dB change in mean conversion loss Table 2 Summary of Performance Variation Test Method RF/LO Band (GHz) Max Change In IF Frequency Initial Mean CL (GHz) Mean CL (db) (db) CL Range (db) HTO HAST HTSL Autoclave Temperature Cycle Table 3 Environmental/Operational Maximum Ratings Static Operating Temperature Range Static Storage Temperature Range Table 4 Static Operating Temperature Range Static Storage Temperature Range Dynamic Operating Temperature Range Humidity Table 5 Device Package 55 o C to +100 o C 40 o C to +150 o C 55 o C to +100 o C 40 o C to +150 o C +25 o C to +75 o C, +5 o C/min ramp 80% +85 o C 10

11 Test Plan 11

12 CQG Substrate & Device Operation Test Condition Duration Sample Size Fail Criteria High Temperature Operation (HTO) T a = 130 o C f LO = 1.5GHz, P Lo = +16dBm 1000 Hours 1 lot of 24 units >1dB change in mean conversion loss Table 6 HTO: This test operates the semiconductor device and packaging with commonly used electrical parameters while subjecting the device and package to greater operational temperatures than specified on the applicable datasheet. CQG & Device Packages Test Conditions Duration Sample Size Fail Criteria Highly Accelerated Temperature and Humidity Stress Test, Unbiased (UHAST) High Temperature Storage Life (HTSL) Low Temperature Storage Life (LTSL) Accelerated Moisture Resistance (Autoclave) Temperature Cycle (TC) Temp = 130 o C, RH = 85% Vapor Pressure = 33.3psia 96 Hours 1 lot of 24 units Temp = 150 o C 1000 Hours 1 lot of 3 units Temp = 40 o C 168 Hours 1 lot of 3 units Temp = 121 o C, RH = 100% Vapor Pressure = 29.7psia T s (min) = 55 o C T s (max) = +100 o C Transition Time = 31 minutes Dwell Time = 10 Minutes 96 Hours 1 lot of 24 units 500 Cycles 1 lot of 24 units >1dB change in mean conversion loss >1dB change in mean conversion loss >1dB change in mean conversion loss >1dB change in mean conversion loss >1dB change in mean conversion loss Table 7 HAST: This test evaluates the reliability of non hermetic packaged devices in humid environments. It employs severe conditions of temperature, humidity, and bias which accelerate the penetration of moisture through the external protective material. The practice of this test procedure complied with JESD22 A110D, Highly Accelerated Temperature and Humidity Stress Test **. HTSL: This test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure mechanisms and time to failure distributions of solid state electronic devices. The practice of this test procedure complied with JESD22 A103D, High Temperature Storage Life **. LTSL: This test method is typically used to determine the effect of time and temperature, under storage conditions, for thermally activated failure mechanisms of solid state electronic devices. During the test, reduced temperature are used without electrical stress applied. This test was not destructive. The practice of this test procedure complied with JESD22 A119A, Low Temperature Storage Life **. Autoclave: This test method applies primarily to moisture resistance evaluations and robustness testing. Samples are subjected to a condensing, highly humid atmosphere under pressure to force moisture into the package to uncover weaknesses such as delamination and metallization corrosion. The practice of this test procedure complied with JESD22 A102D, Accelerated Moisture Resistance Unbiased Autoclave **. Temperature Cycling: This standard applies to single chamber temperature cycling and covers component and solder interconnection testing. This test is conducted to determine the ability of components and solder interconnects to withstand mechanical stresses induced by alternating high and low temperature extremes. The practice of this test procedure complied with JESD22 A104E, Temperature Cycling *. * 12

13 Performance Testing & Preconditioning 13

14 Electrical Test All RF tests were performed using an electronically calibrated N5242A PNA X Network Analyzer. Table 8 shows the LO/RF/IF frequencies & input power. LO/RF Band (GHz) LO Input Power (dbm) RF Input Power (dbm) IF Frequency (GHz) Table 8 Test Fixture To facilitate RF testing, CQG package was attached to a custom designed test fixture. Table 9 gives a list of materials used in the construction of the test fixture. Table 9 Description / Material Aluminum Housing SMA Connector RO 4003 PCB Silver Epoxy Solder (SN63) L T307LCQG MADE IN USA D/C I R Figure 3 Custom test fixture designed to facilitate HTOL, HAST, HTSL & Autoclave tests. 14

15 Preconditioning & Moisture Sensitivity Level (MSL) All samples were subjected to preconditioning & MSL 1 conditions that comply with JESD22 A113F, Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing, & J STD 020D.1, Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices. Both standards were met using the Pb free reflow parameters defined in J STD 020D.1 and shown in figure 5. Figure 4 Pb free reflow profile used to precondition and set the moisture sensitivity level of all samples. 15

16 Performance Plots 16

17 High Temperature Operation (HTO) Conditions Duration Sample Size Fail Criteria Fails Table 10 T a = 130 o C, P Lo = +16dBm 1000 Hours 1 lot of 24 units >1dB change in mean conversion loss 0 Purpose This test operates the semiconductor device and packaging with commonly used electrical parameters while subjecting the device and package to greater operational temperatures than specified on the applicable datasheet. Conversion Loss Variation (HTO) Figure 5 Mean conversion loss variation vs duration of environmental stress among all samples. Histogram and Cumulative Distribution of Conversion Loss Variation (HTO) Figure 6 Distribution of mean conversion loss variation gain among all samples; single unit RMS average. 17

18 LO Return Loss (HTO) Figure 7 Full band LO return loss comparison of 1 sample over 1000 hours of stress. RF Return Loss (HTO) Figure 8 Full band RF return loss comparison of 1 sample over 1000 hours of stress. IF Return Loss (HTO) Figure 9 Full band IF return loss comparison of 1 sample over 1000 hours of stress. 18

19 Highly Accelerated Temperature and Humidity Stress Test, Unbiased (UHAST) Conditions Duration Sample Size Fail Criteria Fails Temp = 130 o C, RH = 85% >1dB change in mean 96 Hours 1 lot of 24 units 0 Vapor Pressure = 33.3psia conversion loss Table 11 Purpose This test evaluates the reliability of non hermetic packaged devices in humid environments. It employs severe conditions of temperature, humidity, and bias which accelerate the penetration of moisture through the external protective material. The practice of this test procedure complied with JESD22 A110D, Highly Accelerated Temperature and Humidity Stress Test. Conversion Loss Variation (UHAST) Figure 10 Mean conversion loss variation vs duration of environmental stress among all samples. Histogram and Cumulative Distribution of Conversion Loss Variation (UHAST) Figure 11 Distribution of mean conversion loss variation gain among all samples; single unit RMS average. 19

20 LO Return Loss (UHAST) Figure 12 Full band LO return loss comparison of 1 sample over 1000 hours of stress. RF Return Loss (UHAST) Figure 13 Full band RF return loss comparison of 1 sample over 1000 hours of stress. IF Return Loss (UHAST) Figure 14 Full band IF return loss comparison of 1 sample over 1000 hours of stress. 20

21 Accelerated Moisture Resistance (Autoclave) Conditions Duration Sample Size Fail Criteria Fails Temp = 121 o C, RH = 100% >1dB change in mean 96 Hours 1 lot of 24 units 0 Vapor Pressure = 29.7psia conversion loss Table 12 Purpose This test method applies primarily to moisture resistance evaluations and robustness testing. Samples are subjected to a condensing, highly humid atmosphere under pressure to force moisture into the package to uncover weaknesses such as delamination and metallization corrosion. The practice of this test procedure complied with JESD22 A102D, Accelerated Moisture Resistance Unbiased Autoclave. Conversion Loss Variation (AC) Figure 15 Mean conversion loss variation vs duration of environmental stress among all samples. Histogram and Cumulative Distribution of Conversion Loss Variation (AC) Figure 16 Distribution of mean conversion loss variation gain among all samples; single unit RMS average. 21

22 LO Return Loss (AC) Figure 17 Full band LO return loss comparison of 1 sample over 1000 hours of stress. RF Return Loss (AC) Figure 18 Full band RF return loss comparison of 1 sample over 1000 hours of stress. IF Return Loss (AC) Figure 19 Full band IF return loss comparison of 1 sample over 1000 hours of stress. 22

23 Table 13 High Temperature Storage Life (HTSL) Conditions Duration Sample Size Fail Criteria Fails Temp = 150 o C 1000 Hours 1 lot of 3 units >1dB change in mean conversion loss 0 Purpose This test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure mechanisms and time to failure distributions of solid state electronic devices. The practice of this test procedure complied with JESD22 A103D, High Temperature Storage Life. Conversion Loss Variation (HTSL) Figure 20 Mean conversion loss variation vs duration of environmental stress among all samples.. LO Return Loss (HTSL) Figure 22 Full band LO return loss comparison of 1 sample over 1000 hours of stress. 23

24 RF Return Loss (HTSL) Figure 23 Full band RF return loss comparison of 1 sample over 1000 hours of stress. IF Return Loss (HTSL) Figure 24 Full band IF return loss comparison of 1 sample over 1000 hours of stress. 24

25 Table 14 Low Temperature Storage Life (LTSL) Conditions Duration Sample Size Fail Criteria Fails Temp = 40 o C 168 Hours 1 lot of 3 units >1dB change in mean conversion loss 0 Purpose This test method is typically used to determine the effect of time and temperature, under storage conditions, for thermally activated failure mechanisms of solid state electronic devices. During the test, reduced temperature are used without electrical stress applied. This test was not destructive. The practice of this test procedure complied with JESD22 A119A, Low Temperature Storage Life **. Conversion Loss Variation (LTSL) Figure 25 Mean conversion loss variation vs duration of environmental stress among all samples. LO Return Loss (LTSL) Figure 27 Full band LO return loss comparison of 1 sample over 1000 hours of stress. 25

26 RF Return Loss (LTSL) Figure 28 Full band RF return loss comparison of 1 sample over 1000 hours of stress. IF Return Loss (LTSL) Figure 29 Full band IF return loss comparison of 1 sample over 1000 hours of stress. 26

27 Temperature Cycle (TC) Conditions Duration Sample Size Fail Criteria Fails T s (min) = 55 o C T s (max) = +100 o C Transition Time = 31 minutes Dwell Time = 10 Minutes Table 15 Purpose 500 Cycles 1 lot of 24 units >1dB change in mean conversion loss This standard applies to single chamber temperature cycling and covers component and solder interconnection testing. This test is conducted to determine the ability of components and solder interconnects to withstand mechanical stresses induced by alternating high and low temperature extremes. Permanent changes in electrical and/or physical characteristics can result from these mechanical stresses. The test procedure complied with JESD22 A104E, Temperature Cycling. Conversion Loss Variation (TC) 0 Figure 30 Mean conversion loss variation vs duration of environmental stress among all samples. Histogram and Cumulative Distribution of Conversion Loss Variation (TC) Figure 31 Distribution of mean conversion loss variation gain among all samples; single unit RMS average. 27

28 LO Return Loss (TC) Figure 32 Full band LO return loss comparison of 1 sample over 1000 hours of stress. RF Return Loss (TC) Figure 33 Full band RF return loss comparison of 1 sample over 1000 hours of stress. IF Return Loss (TC) Figure 34 Full band IF return loss comparison of 1 sample over 1000 hours of stress. 28