APAC SILICIDE 2013 Poster session (updated 2013/7/29) Poster Session I Session Chairs: Prof. Y. Nakamura, Osaka Univ.,

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1 APAC SILICIDE 03 Poster session (updated 03/7/9) Poster Session I Session Chairs: Prof. Y. Nakamura, Osaka Univ., Dr. M. Imai, NIMS [7-P] Processing of nanoscale Fe-Si composite powders and formation of β-fesi by electric discharge plasma activated sintering I. Matsumoto, H. Katsumata, I. Azumaya, T. Takahashi, H. Souma and M. Ishiyama, Meiji University,Japan Elenix, Inc., Japan [7-P] Withdrawn Annealing Time Influence on Fabricating β-fesi Thin Film X. Xiong, Q. Chen, R. Ma, Q. Xie and J. Zhang University of Guizhou, China [7-P3] Optimization of substrate pretreatment and deposition conditions for epitaxial growth of β-fesi film on Si (00) K. Yamaguchi, S. Hamamoto and K. Hojou Japan Atomic Energy Agency, Japan Ibaraki University, Japan [7-P4] Microstructure analysis of β-fesi grown on Ag-coated Si(00) substrate S. Motomura, K. Hayashi, M. Itakura and K. Akiyama Kyushu University, Japan Kanagawa Industry Technology Center, Japan [7-P5] Near-infrared photoluminescence from the eutectic mixture of β-fesi and Si Y. Hara, K. Sato and K. Nakaoka Ibaraki National College of Technology, Japan [7-P6] Photoluminescence enhancement from β-fesi on Ag-coated Si K. Akiyama.3, S. Motomura, G. Hayashi, H. Funakubo 3 and M. Itakura Kanagawa Industrial Technology Center, Japan Kyushu University, Japan 3 Tokyo Institute of Technology, Japan [7-P7] Photoluminescence Enhancement of β-fesi Nanocrystals Grown from Metastable γ Phase T. Hirata, Y. Kawakubo, Y. Noguchi, and Y. Maeda Kyushu Institute of Technology, Japan [7-P8] Enhancement of Near IR Sensitivity of Silicon-Silicide Based Photodetectors D. L. Goroshko,, E. A. Chusovitin, A. V. Shevlyagin,, M. V. Bozhenko, R. I. Batalov 3, R. M. Bayazitov 3 and N. G. Galkin, Far Eastern Branch of Russian Academy of Science, Russia Far Eastern Federal University, Russia

2 [7-P9] Electroluminescence properties of p-si/β-fesi NCs/.../n-Si Mesa Diodes with Em- bedded Multilayers of β-fesi Nanocrystallites E. A. Chusovitin, D. L. Goroshko,, A. V. Shevlyagin,, N. G. Galkin,, T. S. Shamirzaev 3 and A. K. Gutakovskiy 3 Far Eastern Branch of Russian Academy of Science, Russia Far Eastern Federal University, Russia 3 Siberian Branch of Russian Academy of Sciences, Russia [7-P0] Withdrawn Objective Certitude of the β-fesi /Si Inverse Heterojunction Fabrication X. Xiong, Q. Chen, X. Zhen, S. Kang, L. Zhang, Q. Xie and J. Zhang University of Guizhou, China [7-P] Characteristics of Mesa Structural Near-Infrared n-type Nanocrystalline FeSi /p-type Si Heterojunction Photodiodes S. Funasaki, R. Iwasaki, N. Promros and T. Yoshitake Kyushu University, Japan King Mongkut s Institute of Technology, Thailand [7-P] Withdrawn Structure stability and ferromagnetism of the carbon alloying Fe 3 Si compound from first principles calculations R. Ma, J. Huang, X. Xiong, M. Fan, W. Yan and Q. Xie Guizhou University, China [7-P3] Current-induced Magnetization Switching in Fe 3 Si/FeSi /Fe 3 Si Trilayer film K. Sakai,, Y. Noda, D. Tsumagari, K. Takeda 3, and T. Yoshitake Kyushu University, Japan Kurume National College of Technology, Japan 3 Fukuoka Institute of Technology, Japan [7-P4] Epitaxial growth of Ge layers on Fe 3-x Co x Si M. Kawano, S. Yamada, M. Miyao, and K. Hamaya Kyushu University, Japan [7-P5] RBS Study of Disordering of Fe 3-x Mn x Si/Ge() Heteroepitaxial Interfaces Y. Noguchi, T. Hirata, Y. Kawakubo, K. Narumi, S. Sakai, and Y. Maeda, Kyushu Institute of Technology, Japan Advance Science Research Center, Japan [7-P6] Ion Beam Analysis of Quaternary Heusler Alloy Co (Mn -x Fe x )Si() Epitaxially Grown on Ge() Y. Kawakubo, Y. Noguchi, T. Hirata, K. Narumi, S. Sakai, S. Yamada 3, K. Hamaya 3, M. Miyao 3 and Yoshihito Maeda,, Kyushu Institute of Technology, Japan Japan Atomic Energy Agency, Japan 3 Kyushu University, Japan [7-P7] Synthesis of Mg Si bulk crystal by vertical gradient freezing method using KCl as liquid encapsulant R. Nakagawa, H. Katsumata, S. Hashimoto and S. Sakuragi Meiji University, Japan

3 Union Materials Inc., Japan [7-P8] Thermoelectric properties and durability at elevated temperatures of impurity doped n-type Mg Si Y. Oto, T. Iida, T. Sakamoto, R. Miyahara, A. Natsui, K. Nishio, Y. Kogo, N. Hirayama and Y. Takanashi Tokyo University of Science, Japan [7-P9] B and Sb Doping Effects on Thermoelectric Properties of Magnesium Silicide M. Kubouchi, K. Hayashi and Y. Miyazaki Tohoku University, Japan [7-P0] High-pressure X-ray Diffraction Study and Thermoelectric Properties of Mg Si Y. Mori, Y. Kaihara, S. Nakamura, T. Yoshino 3 and K. Takarabe Okayama University of Science, Japan Tsuyama National College of Technology, Japan 3 Okayama University, Japan [7-P] Study on Sintering Effects on Grain Size, Electrical Resistivity and Seebeck Coefficient of Thermoelectric Mg Si S. Nakamura, Y. Mori and K. Takarabe Tsuyama National College of Technology, Japan Okayama University of Science, Japan [7-P] Solid phase growth of Mg Si thin films on Si(00) and their optical, structural and electrical properties T. Hashimoto, H. Katsumata, K. Sato, R. Nakagawa and S. Uekusa Meiji University, Japan [7-P3] Solid-phase growth of Mg Si by annealing in inert gas atmosphere T. Ikehata, T. Ando, T. Yamamoto, R. Takagi, N. Sato and H. Udono Ibaraki University, Japan [7-P4] Withdrawn Solid-State Synthesis of Single phase Mg Si Films on Si Substrates deposited at various sputtering powers Q. Xiao, Q. Xie and Q. Chen Guizhou University, China [7-P5] Epitaxial Growth of Mg Si Films by RF Magnetron Sputtering Method A. Katagiri, K. Akiyama,, S. Ogawa, M. Matsushima and H. Funakubo Tokyo Institute of Technology, Japan Kanagawa Industrial Technology Center, Japan [7-P6] Spectral characterization of Mg Si pn-junction diode depended on RTA periods M. Takezaki, Y. Yamanaka, M. Uchikoshi and H. Udono Ibaraki University, Japan Tohoku University, Japan [7-P7] Synthesis of Mg Si nanorod arrays by the heat treatment of Si nanorod arrays under Mg vapor

4 W. Li, K. Nakane, M. Suzuki and H. Tatsuoka Kyoto University, Japan [7-P8] Precipitate Phases inside Magnesium Silicide Droplets prepared by Pulsed Laser Deposition on Unheated Silicon Substrate H. Sugawara, A. Izutsu, T. Igarashi and G. Kubo Tokyo Metropolitan University, Japan [7-P9] Performance of Columnar Grained Silicides As Li-ion Battery Cathode X. Meng, P. Yuan, G. Shao,, H. Tatsuoka 3, J. Hu Zhengzhou University, China University of Bolton, UK 3 Poster Session II Session Chairs: Prof. Y. Terai, Kagoshima Univ., Prof. H. Udono, Ibaraki Univ. [8-P] Epitaxial growth of BaSi films with large grains using vicinal Si() substrates M. Baba, K. O. Hara 3, N. Saito, N. Yoshizawa, N. Usami 3,4, K. Toko and T. Suemasu,4 University of Tsukuba, Japan National Institute of Advanced Industrial Science and Technology, Japan 3 Nagoya University, Japan 4 CREST-Japan Science and Technology Agency, Japan [8-P] Formation and characterizations of BaSi films on glass substrate by RF sputtering N. A. A. Latiff, T. Yoneyama, T. Shibutami, K. Matsumaru, K. Toko and T. Suemasu,3 University of Tsukuba, Japan Tosoh Corporation, Japan 3 CREST-Japan Science and Technology Agency, Japan [8-P3] Fabrication and characterizations of phosphorus-doped n-type BaSi epitaxial films grown by molecular beam epitaxy R. Takabe, M. Baba, K. Nakamura, W. Du, M. A. Khan, S. Koike, K. Toko, K. Hara, N. Usami,3 and T. Suemasu,3 University of Tsukuba, Japan Nagoya University, Japan 3 CREST-Japan Science and Technology Agency, Japan [8-P4] Fabrication of BaSi films on ()-oriented Si layers formed by inverted Al-induced crystallization method on glass structures R. Numata, K. Toko, N. Usami and T. Suemasu University of Tsukuba, Japan Nagoya University, Japan [8-P5] Evaluation of diffusion coefficients of n-type impurities in MBE-grown BaSi epitaxially layers N. Zhang, K. Nakamura, M. Baba, K. Toko, and T. Suemasu,

5 University of Tsukuba, Japan CREST-Japan Science and Technology Agency, Japan [8-P6] Investigation on the Surface Morphologies and Tunneling Properties of BaSi /Si hetero-junction for BaSi solar cell applications W. Du, M. Baba, R. Takabe, N. Zhang, K. Toko, N. Usami,3 and T. Suemasu,3 University of Tsukuba, Japan Nagoya University, Japan 3 CREST-Japan Science and Technology Agency, Japan [8-P7] Fabrication of n+-basi /p+-si Tunnel Junction on Si(00) Surface for characterization of photoresponse properties of BaSi epitaxial films S. Koike, M. Baba, K. Nakamura, K. M. Ajmal, W. Du, K. Toko and T. Suemasu, University of Tsukuba, Japan CREST-Japan Science and Technology Agency, Japan [8-P8] Investigation of electrical conductivities and anti-reflection properties of AZO formed by RF sputtering for BaSi solar cells N. Shimada, M. Baba, K. Nakamura, K. Toko and T. Suemasu, University of Tsukuba, Japan CREST-Japan Science and Technology Agency, Japan [8-P9] Studies on Thermal Stability of Higher Manganese Silicide by Means of in situ XRD and TG-DTA Y. Kikuchi, T. Nakajo, K. Hayashi and Y. Miyazaki Tohoku University, Japan [8-P0] Solution Growth and Optical Characterization of MnSi.7 M. Iioka, D. Ishida, S. Kojima and H. Udono Ibaraki University, Japan [8-P] Syntheses of manganese related nanostructures using MnCl and Si powders E. C. Meng, W. Li and H. Tatsuoka [8-P] Withdrawn Study on the electronic structure and optical properties of Cr -x V x Si S. Zhou, W. Yan,, C. Zhang, Z. Zhang, Q. Xie, R. Ma Anshun University, China Guizhou University, China [8-P3] Formation and optical properties of semiconducting Ca silicide films on Si substrates D. A. Bezbabny,, K. N. Galkin, S. A. Dotsenko,, N. G. Galkin,, E. Zielony 3, R. Kudrawiec 3 and J. Misiewicz 3 Far Eastern Branch of Russian Academy of Science, Russia Far Eastern Federal University, Russia 3 Wroclaw University of Technology, Poland [8-P4] Effect of sulphur addition on growth evolution of MoSi nanosheets synthesized by molten salt method using MoS as a template

6 D. Ishikawa, W. Li and H. Tatsuoka [8-P5] Optical measurements of Ba 8 Ga 6 Ge 30 clathrate grown by self-flux method S. Kojima, M. Imai, T. Kume 3, K. Tanigaki 4, H. Tajima 5 and H. Udono Ibaraki University, Japan National Institute for Materials Science, Japan 3 Gifu University, Japan 4 Tohoku University, Japan 5 University of Tokyo, Japan [8-P6] Withdrawn Structural characteristics of liquid SiC during quenching process W. Yan,, T. Gao, X. Guo,, Q. Xie University of Guizhou, China University of Anshun, China [8-P7] Structural and optical properties of magnetron sputtered and pulsed beam annealed Ge/Si layers K. Galkin, R. Batalov, R. Bayazitov, H. Novikov, V. Shustov, D. Bizyaev, P. Gaiduk 3, G. Ivlev 3 and S. Prokopiev 3 Far Eastern Branch of Russian Academy of Science, Russia Kazan Physical-Technical Institute of Russian Academy of Science, Russia 3 Belorussian State University, Belarus [8-P8] Effect of Ge/Al thickness on Al-induced crystallization of amorphous Ge layers on glass substrates K. Nakazawa, K. Toko, N. Saitoh, N. Yoshizawa, N. Usami 3, and T. Suemasu University of Tsukuba, Japan National Institute of Advanced Industrial Science and Technology, Japan 3 Nagoya University, Japan [8-P9] Morphology of Gold Silicide Formation in Annealed Au/Si System C.-L. Hsu and C.-T. Shih Chung Yuan Christian University, Taiwan Tunghai University, Taiwan [8-P0] Syntheses of Nanowire Bundles based on Semiconducting Metal Silicides W. Li, K. Nakane and H. Tatsuoka [8-P] Synthesis of Si nanowires using Au catalyst accompanied with Silicide nanoparticle formation E. C. Meng, W. Li, Y. Shirahashi, K. Nakane and H. Tatsuoka [8-P] Reaction of Na-Sn compounds with Air and Sodium Carbonate and Stannate Nano-/Micro-rod Formation K. Nakane, E. Meng, W. Li and H. Tatsuoka [8-P3] Size and Substrate Orientation Dependence of Structures and Morphologies of Ni clusters on SrTiO 3 substrates studied by UHV-TEM/STM

7 M. Tanaka National Institute for Materials Science, Japan [8-P4] ESR study on pure single crystalline sapphire M. Hori, N. Fukumoto, Y. Ono, R. Chikaoka, Y. Hayakawa, S. Moriwaki and N. Mio University of Toyama, Japan University of Tokyo, Japan [8-P5] Effects of Phosphorus Addition to Polysilane Thin Films and the Application to Photovoltaic Devices T. Oku, J. Nakagawa, A. Suzuki, T. Akiyama, M. Yamada, S. Fukunishi and K. Kohno University of Shiga Prefecture, Japan Osaka Gas Chemicals Co., Ltd., Japan [8-P6] Fabrication and Photovoltaic Properties of Silicon Phthalocyanine and Silicon Naphthalocyanine-Based Solar Cells T. Oku, K. Yoshida, S. Hori, A. Suzuki, T. Akiyama and Y. Yamasaki University of Shiga Prefecture, Japan Orient Chemical Industries Co. Ltd., Japan [8-P7] Microstructure Analysis and Properties of Spherical Silicon Solar Cells with Anti-Reflection Thin Films T. Oku, M. Kanayama, T. Akiyama, Y. Kanamori, M. Murozono University of Shiga Prefecture, Japan Clean Venture Co. Ltd., Japan