RESUME of TRAN BINH TINH

Transcription

1 RESUME of TRAN BINH TINH University of Michigan Department of Electrical Engineering and Computer Science EECS 2300G Building, No Beal Avenue Ann Arbor, MI , USA. Mobile: Web: Personal Information Date and place of birth: April 1980 in An Minh Ward, Kien Giang Province, Vietnam Nationality: Vietnamese Gender: Male Marital status: Married Education BS in Physics and Informatics, Can Tho University, Vietnam MS in Applied Physics, University of Science, Vietnam National University of Ho Chi Minh City, Vietnam (3 years program) Thesis Study of Optical and Material Properties of InGaN/GaN Multi Quantum-Wells Light Emitting Diodes (Coadvisors: Profs. Tran Tuan and Dang Mau Chien) PhD in Materials Science and Engineering, Department of Materials Science and Engineering, National Chiao Tung University, Taiwan Dissertation Metal Organic Chemical Vapor Deposition Growth of InGaN and InAlN on Si Substrates for Photovoltaic Applications (Advisor: Prof. Edward Yi Chang) Teaching Experience Lecturer at Kien Giang Community College, Vietnam Lecturer at University of Technical Education of Ho Chi Minh City, Ho Chi Minh City, Vietnam Lecturer at Phu Lam Technical and Economics College, Ho Chi Minh City, Vietnam Research Experience Research Assistant, Laboratory for Nanotechonology, Vietnam, National University at Ho Chi Minh City, Vietnam Research Assistant, the Industrial Technology Research Institute (ITRI), Taiwan Postdoctoral Researcher, CSD Lab, Department of Materials Science and Engineering, National Chiao Tung University (NCTU), Taiwan 1/10

2 Foreign Postdoctoral Researcher, Quantum Optodevice Laboratory, RIKEN, Japan present Research Fellow, University of Michigan, United States. Research Interests III-V semiconductors based materials and devices, visible and ultraviolet light-emitting diodes, solar cells and high electron mobility transistors. Hands-on Experience 09 years experience on MOCVD and MBE systems (Veeco and Thomas Swan, Homemade models). Strong experience in material growth and device fabrication. Honors/Awards Outstanding Teaching Assistant Award, offered by Kien Giang Community College, Full PhD scholarship program at National Chiao Tung University (NCTU), offered by NCTU Taiwan, Student Travel Grant, offered by the Electrochemical Society, USA, Financial support for attending conference, offered by NCTU, Foreign Postdoctoral Research Fellow, RIKEN, Japan, 4/2014-3/2017. Computer Skills Personal web-design, Internet Network, Microsoft Offices, Matlab, Pascal, Program C, Origin, EndNote, AutoCAD, etc. Languages Vietnamese: native English: proficiency Chinese: intermediate Japanese: beginner Publications Binh Tinh Tran and Hideki Hirayama, Growth and Fabrication of High External Quantum Efficiency AlGaN-based Deep Ultraviolet Light-Emitting Diode on Patterned Si Substrate, Scientific Reports (Under-Revision). 30. Binh Tinh Tran, Hideki Hirayama, Masafumi Jo, Noritoshi Maeda, Daishi Inoue and Tomoka Kikitsu, High Quality AlN Template Grown on Patterned-Si Substrate, Journal of Crystal Growth 468 (2017) Binh Tinh Tran, Noritoshi Maeda, Masafumi Jo, Daishi Inoue, Tomoka Kikitsu and Hideki Hirayama, Performance Improvement of AlN Crystal Quality Grown on 2/10

3 Patterned Si(111) Substrate for Deep UV-LED Applications, Scientific Reports 6 (2016) Binh Tinh Tran, Hideki Hirayama, Noritoshi Meada, Masafumi Jo and Shiro Toyoda, Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned-Si Substrate, Scientific Reports, 5 (2015) Tien-Tung Luong, Binh Tinh Tran, Yen-Teng Ho, Ting-Wei Wei, Yue-Han Wu, Tzu- Chun Yen, Lin-Lung Wei, Jer-Shen Maa and Edward Yi Chang, 2H Silicon Carbide Epitaxial Growth on c-plane Sapphire Substrate Using an AlN Buffer Layer and Effects of Surface pretreatments, Electronic Materials Letters 11 (2015) Chen-Chen Chung, Hsiao-Chieh Lo, Yen-Ku Lin, Hung-Wei Yu, Binh Tinh Tran, Kung- Liang Lin, Yung-Chang Chen, Nguyen-Hong Quan, Edward Yi Chang and Yuan-Chieh Tseng, Broadband Antireflection Sub-wavelength Structure of InGaP/InGaAs/Ge Triple Junction Solar Cell with Composition-graded SiNx, Materials Research Express 2 (2015) Tien-Tung Luong, Binh Tinh Tran, Yen-Teng Ho, Thien-Huu Ha-Minh, Yu Lin Hsiao, Shih-Chien Liu, Yu-Sheng Chiu and Edward Yi Chang, Performance Improvements of AlGaN/GaN HEMTs by Strain Modification and Unintentional Carbon Incorporation, Electronic Materials Letters 11 (2015) Tien Tung Luong, Yen Teng Ho, Binh Tinh Tran, Yuen Yee Woong and Edward Yi Chang, Barrier Strain and Carbon Incorporation-Engineered Performance Improvements for AlGaN/GaN High Electron Mobility Transistors, Chemical Vapor Deposition 21 (2014) Chen-Chen Chung, Binh Tinh Tran, Kung-Liang Lin, Yen-Teng Ho, Hung-Wei Yu, Nguyen-Hong Quan and Edward Yi Chang, Efficiency Improvement of InGaP/GaAs/Ge Solar Cells by Hydrothermal-Deposited ZnON nanotube Structure, Nanoscale Research Letters, 9 (2014) Chi-Lang Nguyen, Nguyen Hong Quan, Binh-Tinh Tran, Yung-Hsuan Su, Shih-Hsuan Tang, Guang-Li Luo, Edward-Yi Chang, Effect of Low Temperature Ge Seed Layer and Post Thermal Annealing on Quality of Ge 1-x Si x (0.05 x 0.1) Graded Buffer Layers by UHV-CVD, Electronic Materials Letters, 4 (2014) Quang-Ho Luc, Edward Yi Chang, Hai-Dang Trinh, Hong-Quan Nguyen, Binh-Tinh Tran, Yueh-Chin Lin, Effect of Annealing Processes on the Electrical Properties of the Atomic Layer Deposition Al 2 O 3 /In 0.53 Ga 0.47 As Metal Oxide Semiconductor Capacitors, Japanese Journal of Applied Physics, 53 (2014) 04EF Binh Tinh Tran, Kung-Liang Lin, Kartika Chandra Sahoo, Chen-Chen Chung, Chi-Lang Nguyen and Edward Yi Chang, Effect of Multiple AlN Layers on the GaN Films Qualities Grown on Si Substrates, Electronic Materials Letters 10 (2014) /10

4 19. Kung-Liang Lin, Binh Tinh Tran, Chung-Chen Chen, and Edward-Yi Chang, Growth of GaN Films on Circle Array Patterned Si (111) Substrates, Journal of Crystal Growth 401 (2014) Chen-Chen Chung, Binh Tinh Tran, Ming-Hung Han, Kung-Liang Lin, Hung-Wei Yu, Yen-Teng Ho, Chun-Yen Chang, and Edward Yi Chang, Effect of the Circle-Grid Electrodes on Concentrated GaAs Solar Cell Efficiency, Electronic Materials Letters 10 (2014) Chen-Chen Chung, Binh Tinh Tran, Hao-Vei Han, Yen-Teng Ho, Hung-Wei Yu, Kung- Liang Lin, Hong-Quan Nguyen, Peichen Yu, Hao -Chung Kuo and Edward Yi Chang, The Effect of CdS QDs Structure on the InGaP/GaAs/Ge Triple Junction Solar Cell Efficiency, Electronic Materials Letters, 10 (2014) Binh-Tinh Tran, Edward-Yi Chang, Chen-Hauw Ming, Kung-Liang Lin, Growth and Fabrication of GaN Light Emitting Diode on Patterned-Sapphire Substrate, ECS Trans. 50 (2013) Chen-Chen Chung, Binh-Tinh Tran, Kung-Liang Lin, Ching-Chiun Wang, Chien-Chih Chen, and Chih-Yung Huang, Characterizations of Al 2 O 3 /ZnO Grown on Si Substrate by Plasma Enhanced Atomic Layer Deposition, ECS Trans. 50 (2013) Binh-Tinh Tran and Edward-Yi Chang, MOCVD Growth of Lattice-Matched InAlN/GaN on Si(111) Substrate for Ultraviolet Photodiode Application, Electronic Materials Letters, 9 (2013) Binh-Tinh Tran, Edward-Yi Chang, Hai-Dang Trinh, Kartika Chandra Sahoo, Ching-Ting Lee, Kung-Liang Lin, Man-Chi Huang, Tung-Luong Tien, and Chi-Lang Nguyen, Fabrication and Characterization of n-in 0.4 Ga 0.6 N/p-Si Solar Cell, Solar Energy Materials & Solar Cells, 102 (2012) Hong Quan Nguyen, Hai Dang Trinh, Hung Wei Yu, Ching Hsiang Hsu, Chen Chen Chung, Binh Tinh Tran, Yuen Yee Wong, Thanh Hoa Phan Van, Quang Ho Luc, Diao Yuan Chiou, Chi Lang Nguyen, Chang Fu Dee, Chang, E. Y., The growth and fabrication of high-performance In0.5Ga0.5As metal-oxide-semiconductor capacitor on GaAs substrate by metalorganic chemical vapor deposition method, Semiconductor Electronics, (2012). 11. Hai-Dang Trinh, Yue-Chin Lin, Chang, E. Y., Hong-Quan Nguyen, Shin-Yuan Wang, Yuen-Yee Wong, Binh-Tinh Tran, Quang-Ho Luc, Chi-Lang Nguyen, Chang-Fu Dee, Influence of post deposition annealing temperatures on electrical properties of Al 2 O 3 /InSb MOSCAPs, Semiconductor Electronics, (2012). 10. Hung Wei Yu, Hong Quan Nguyen, Chen Chen Chung, Binh Tinh Tran, and Edward Yi Chang, InGaP/GaAs Dual-junction Solar cells with Different Tunnel Diodes, International Journal of Research in Engineering and Technology, 4 (2012) /10

5 9. Binh-Tinh Tran, Edward Yi Chang, Man-Chi Huang, Hai-Dang Trinh, Tung-Luong Tien, and Kung-Liang Lin, Characteristics of GaN Films Grown on Si(111) Substrates under Various Growth Temperatures of Multiple AlN Buffer Layers, ECS Trans. 50 (2012) Hung Wei Yu, Chen Chen Chung, Chin Te Wang, Hong Quan Nguyen, Binh Tinh Tran, Kung Liang Lin, Chang Fu Dee, Burhanuddin Yeop Majlis, and Edward Yi Chang, "InGaP/GaAs dual-junction solar cell with AlGaAs/GaAs tunnel diode grown on 10 off misorientation GaAs substrate", Japanese Journal of Applied Physics, 51 (2012) H. Q. Nguyen, E. Y. Chang, H. W. Yu, H. D. Trinh, C. F. Dee, C. H. Hsu, B. T. Tran, and C. C. Chung, Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-quality In 0.5 Ga 0.5 As and In 0.3 Ga 0.7 As on GaAs Substrate Using Metalorganic Chemical Vapor Deposition, Applied Physics Express, 5 (2012) Binh-Tinh Tran, Edward-Yi Chang, Kung-Liang Lin, Yuen-Yee Wong, Kartika Chandra Sahoo, Hsiao-Yu Lin, Man-Chi Huang, Hong-Quan Nguyen, Ching-Ting Lee, and Hai- Dang Trinh, Growth of High-Quality In 0.4 Ga 0.6 N Film on Si Substrate by Metal Organic Chemical Vapor Deposition", Applied Physics Express, 4 (2011) Hai-Dang Trinh, Edward-Yi Chang, Guy Brammertz, C. Y. Lu, Hong-Quan Nguyen, Binh- Tinh Tran, "Experimental and modeling on atomic layer deposition Al 2 O 3 /n-inas Metal-Oxide-Semiconductor Capacitor with Various Surface Treatments", ECS Transactions, 34 (2011) Man-Chi Huang, Chia-Hua Chang, Fang-Ming Li, Ching-Hsiang Hsu, Binh-Tinh Tran, S. S. Tang, Kung-Liang Lin, Yueh-Chin Lin, Fu-Ching Tung, Muh-Wang Liang, and Edward Yi-Chang, The effect of H 2 treatment on heterojunction with intrinsic thin layer (HIT) solar cell performance using MHz VHF-PECVD system, June 2011, Photovoltaic Specialists Conference, th IEEE, p H. D. Trinh, G. Brammertz, E. Y. Chang, Senior Member, C. I. Kuo, C. Y. Lu, Y. C. Lin, H. Q. Nguyen, Y. Y. Wong, and B. T. Tran, "Electrical Characterization of Al 2 O 3 /n- InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments", IEEE Electron Device Letters, 32 (6) June Hai-Dang Trinh, Edward Yi Chang, Yuen-Yee Wong, Chih-Chieh Yu, Chia-Yuan Chang, Yueh-Chin Lin, Hong-Quan Nguyen, and Binh-Tinh Tran, "Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties", Japanese Journal of Applied Physics, 49 (2010) Kartika Chandra Sahoo, Men-Ku Lin, Edward-Yi Chang, Tran Binh Tinh, Yiming Li, and Jin-Hua Huang, "Silicon Nitride Nanopillars and Nanocones Formed by Nickel 5/10

6 Nanoclusters and Inductively Coupled Plasma Etching for Solar Cell Application", Japanese Journal of Applied Physics, 48 (2009) International Conference Abstracts: Binh Tinh Tran (Invited), Recent Progress of AlN Template Growth on Si substrates for Ultraviolet LED Applications, Europe Meetings, August 7-11, 2017, Berlin, Germany Binh Tinh Tran, Hideki Hirayama, Noritoshi Maeda, Masafumi Jo, Daishi Inoue and Tomoka Kikitsu, Improvement of AlN Crystal Quality on Si Substrate for Deep UV- LED Applications, International Workshop on Nitride Semiconductors (IWN 2016), October 2-7, 2016, Orlando, Florida, the USA. 40. Binh Tinh Tran (invited) and Hideki Hirayama, MOCVD Growth of High Quality AlN Template on Patterned-Si Substrate, EMN Meeting, September 4-8, 2016, Budapest, Hungary. 39. Binh Tinh Tran, Hideki Hirayama, Noritoshi Maeda, Masafumi Jo, Daishi Inoue and Tomoka Kikitsu, Effect of Patterned-Si Substrate on Crystalline Quality of AlN Template, 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), August 7-12, 2016, Nagoya, Japan Binh Tinh Tran, Hideki Hirayama, Noritoshi Maeda and Masafumi Jo, Growth of AlN Template and AlGaN MQWs on Micro-circle Patterned Si Substrate, 6 th International Symposium on Growth of III-Nitrides, November 8-13, 2015, Act City Hamamatsu, Hamamatsu, Japan. 37. Binh Tinh Tran, Hideki Hirayama, Shiro Toyoda and Noritoshi Meada, Direct Growth and Controlled Coalescence of Thick AlN Template on Circle Patterned-Si Substrate, SPIE Optics+Photonics Optical Engineering+Application, August 9-13, San Diego, California, United States Bui Trung Thanh, Binh Tinh Tran, Pham Hung Van, Tran Hoang Hai, Streptavidin Immobilization on Silica Coated magnetite Nanoparticles for Binding Biotinylated Anti-glypican 3 Antibody Used in Diagnosis of Liver Cancer, 7 th International Workshop on Advanced Materials Science And Nanotechnology (IWAMSN 2014), Ha Long City, Vietnam, 2-6 November Franky Lumbantoruan, Yuan-Yee Wong, Yue-Han Wu, Wei-Ching Huang, Niraj Man Shrestra, Tung Tien Luong, Tran Binh Tinh, Edward Yi Chang, Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD, IEEE-ICSE2014, th August, 2014, Kuala Lumpur, Malaysia. 6/10

7 Quang Ho Luc, Edward Yi Chang, Hai Dang Trinh, Binh Tinh Tran, Hong Quan Nguyen, Yueh Chin Lin, Yuen Yee Wong, Huy Binh Do, Sa Hoang Huynh and Chi Lang Nguyen, The electrical characteristics of Al 2 O 3 /AlN/n, p-in 0.53 Ga 0.47 As metal oxide semiconductor capacitors with plasma enhanced atomic layer deposition aluminum nitride, APSPT-8, Dec , Hsinchu, Taiwan, Chen-Chen Chung, Kung-Liang Lin, Shih-Wei Chen, Binh-Tinh Tran, Yeh-Sheng Ho, Chien-Chih Chen and Edward-Yi Chang, The ZnO Nanotube on InGaP/GaAs/Ge Solar Cells Fabricated by Hydrothermal Deposited, MRS-T Annual Meeting, October 2013, Jhongli City, Taiwan. 32. Quang-Ho Luc, Edward Yi Chang, Hai-Dang Trinh, Hong-Quan Nguyen, Binh-Tinh Tran, Yueh-Chin Lin and Huy-Binh Do, "On the Electrical Characteristics of the Atomic Layer Deposition Al 2 O 3 /In 0.53 Ga 0.47 As MOSCAPs with Various Annealing Processes," International Conference on Solid State Devices and Materials (SSDM), September 2013, Fukuoka, Japan. 31. Binh Tinh Tran, Chen Chen Chung, Kartika Chandra Sahoo, Chi Lang Nguyen, Quang Ho Luc, Huy Binh Do and Edward Yi Chang, Effect of Different AlN/Si(111) Templates on the Performance of InAlN/GaN-Based Ultraviolet Photodiode, IEDMS 2013, Nov , Nantou, Taiwan, Hai Dang Trinh, Yue Chin Lin, Edward Yi Chang, Hong Quan Nguyen, Shin Yuan Wang, Yuen Yee Wong, Binh Tinh Tran, Quang Ho Luc, and Chi Lang Nguyen, Interdiffusion Dependent on Electrical Characteristics of Al 2 O 3 /InSb Metal-Oxide- Semiconductor Capacitors, 2012 GIST-NAIST-NCTU Joint Symposium on Interdisciplinary Nanoscience & Beyond at NCTU, Hsinchu, Taiwan, Nov , Hai-Dang Trinh, Yueh-Chin Lin, Edward-Yi Chang, Hong-Quan Nguyen, Yuen-Yee Wong, Binh-Tinh Tran, Roslina M. Sidek, P. Susthitha Menon, Influence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPs, the 10th IEEE International Conference on Semiconductor Electronics 2012 (IEEE- ICSE2012), 19-21st September, Kuala Lumpur, Malaysia. 28. Hong-Quan Nguyen, Hai-Dang Trinh, Edward-Yi Chang, Hung-Yu Wei, Yuen-Yee Wong, Binh-Tinh Tran, The Growth and Fabrication of High-Performance In 0.5 Ga 0.5 As Metal-Oxide-Semiconductor Capacitor on GaAs Substrate by Metalorganic Chemical Vapor Deposition Method, the 10th IEEE International Conference on Semiconductor Electronics 2012 (IEEE-ICSE2012), 19-21st September, Kuala Lumpur, Malaysia. 27. E. Y. Chang, H. D. Trinh, Y. C. Lin, C. I. Kuo, H. Q. Nguyen, and B. T. Tran, The Growth of III-V and Ge on Si for High-Speed and Low-Power Logic Device Application, International Conference on Electronic Materials (IUMRS-ICEM 2012), 23-28th September, 2012, Pacifico Yokohama, Yokohama, Japan (Invited Talk). 7/10

8 26. Hung Wei Yu, Tsun Ming Wang, Hong Quan Nguyen, Binh Tinh Tran, Chen Chen Chung, Ching Hsiang Hsu,Dao Yuan Chiuo, Phan Van Thanh Hoa and Edward Yi Chang, AlGaAs/ GaAs Tunnel diodes grown on misorientated GaAs substrates for InGaP/ GaAs dual-junction solar cell applications, The Energy & Materials Research Conference (EMR2012), 20 to 22 June 2012, Torremolinos, Spain. 25. Chen-Chen Chung, Binh-Tinh Tran, Kung-Liang Lin, Ching-Chiun Wang, Chien-Chih Chen, and Chih-Yung Huang, Characterizations of Al 2 O 3 /ZnO Grown on Si Substrate by Plasma Enhanced Atomic Layer Deposition, 222 nd ECS Conference, 7-12 October 2012, Honolulu, Hawaii, USA. 24. Binh-Tinh Tran, Edward-Chang Yi, Kung-Liang Lin, Tieng-Tung Luong, Hung-Wei Yu, Man-Chi Huang, Chen-Chen Chung, Hai-Dang Trinh, Hong-Quan Nguyen, Chi-Lang Nguyen, Quang-Ho Luc, Characterizations of GaN Films Grown on Si (111) Substrates under Various Growth Temperatures of Multiple AlN Buffer Layers, 222 nd ECS Conference, 7-12 October 2012, Honolulu, Hawaii, USA. 23. Binh-Tinh Tran, Kung-Liang Lin, Ching-Chian Wang, Chien-Chih Chen, Chih-Yung Huang, Chen-Chen Chung, Edward-Yi Chang, Growth and Fabrication of GaN Light Emitting Diode on Patterned-Sapphire Substrate, 222 nd ECS Conference, 7-12 October 2012, Honolulu, Hawaii, USA H. Q. Nguyen, E. Y. Chang, H. D. Trinh, H. W. Yu, Y. Y. Wong, H. H. Vu, T. B. Tinh, K. L. Lin, C. C. Chung, C. H. Hsu, W. C. Wang and C. L. Nguyen, High quality 1eV InGaAs on GaAs substrate for inverted metamorphic solar cell by MOCVD, the 38 th International Symposium on Compound Semiconductors (ISCS 2011), Berlin, Germany, May 22-26, pp , Tien Tung Luong, Edward-Yi Chang, Kung-Liang Lin, Binh Tinh Tran and Yu-Lin Hsiao, Photoluminescence Studies of GaN Films Grown on Sapphire Substrate by MOCVD, International Thin Films Conference (TACT2011), November 20-23, 2011, Kenting, Pingtung, Taiwan. 20. T. T. Luong, Yuen-Yee Wong, Edward Yi Chang, Jer-Shen Maa, W. C. Huang, K. L. Lin, B. T. Tran and Y. L. Hsiao, Growth of high quality and crack-free thick AlGaN films on sapphire substrates using high-temperature AlN interlayer by MOCVD, International Thin Films Conference (TACT2011), November 20-23, 2011, Kenting, Pingtung, Taiwan. 19. Hong-Quan Nguyen, Edward-Yi Chang, Hung-Wei Yu, Yuen-Yee Wong, Hai-Dang Trinh, Binh-Tinh Tran, Kung-Liang Lin, Chen-Chen Chung, Wei-Chieh Wang, Chi- Lang Nguyen, The Growth and Investigation of In 0.3 Ga 0.7 As on GaAs by MOCVD, 2011 Annual Meeting of the Physical Society of ROC in Taipei, Taiwan, January 25-27, T. T. Luong, Y.-Y. Wong, E. Y. Chang, J.-S. Maa, W. C. Huang, K. L. Lin, B. T. Tran and Y. L. Hsiao, Effect of High Temperature AlN Interlayer and High Temperature AlN as the First Layer on the Performance of AlGaN/GaN High Electron Mobility 8/10

9 Transistor Grown by MOCVD, the 9 th Topical Workshop on Heterostructure Microelectronics (TWHM2011), Gifu, Japan, August 28-31, M. C. Huang, Y. Y. Wong, F. M. Li, H. D. Trinh, B. T. Tran, K. L. Lin, Y. T. Ho, Y. C. Lin, F. C. Tung, M. W. Liang, and Edward Y. Chang, Improvement of Heterojunction with Intrinsic Thin Layer (HIT) Solar Cell Performance by Using VHF-PECVD System, International Thin Films Conference (TACT2011), November 20-23, 2011, Kenting, Pingtung, Taiwan. 16. Binh-Tinh Tran (Invited Talk), Edward-Yi Chang, Hai-Dang Trinh and Wong Yuen Yee, MOCVD Grown InGaN on Si for Photovoltaic Applications, the 12 th International Conference in Asia (IUMRS-ICA 2011), Taipei, Taiwan, September 19-22, Luong, T. T.; Wong, Y. Y.; Chang, Y.; Huang, W. C.; Lin, K. L.; Tran, B. T.; Hsiao, Y. L, Effect of High Temperature AlN on The Performance of AlGaN/GaN High Electron Mobility Transistor Grown by MOCVD, the 9 th International Conference on Nitride Semiconductors, SECC, Glasgow, UK, July th, Hsiao, Yu-Lin; Luong, Tien-Tung; Chang, Edward-Yi; Lin, Kung-Liang; Tran, Binh- Tinh, High-quality In 0.2 Ga 0.8 N/GaN multiple quantum wells on an appropriate off-cut sapphire substrate, the 9 th International Conference on Nitride Semiconductors, SECC, Glasgow, UK, July th, Man-Chi Huang, Chia-Hua Chang, Fang-Ming Li, Ching-Hsiang Hsu, Binh-Tinh Tran, S. S. Tang, Kung-Liang Lin, Yueh-Chin Lin, Fu-Ching Tung, Muh-Wang Liang, and Edward Yi-Chang, "The Effect of H2 Treatment on Heterojunction with Intrinsic Thin Layer (HIT) Solar Cell Performance Using 40.68MHz VHF-PECVD System", the 37 th IEEE Photovoltaic Specialist Conference, Washington State Convention Center, Seattle, Washington, USA, June 19-24, Tien Tung Luong, Yuen-Yee Wong, Edward Chang, Wei-Ching Huang, Kung Liang Lin, Binh Tinh Tran and Yu Lin Hsiao, Improvement of AlGaN/GaN High Electron Mobility Transistor Performance by Using High Temperature AlN Interlayer and Buffer Layer Grown by MOCVD, the 38 th International Symposium on Compound Semiconductors to be held in Berlin from May 22-26, 2011, Berlin, Germany. 11. Binh-Tinh Tran, Edward-Yi Chang, Kung-Liang Lin, Hai-Dang Trinh, Man-Chi Huang, Viraj Man Shrestta, Tien-Tung Luong and Chi-Lang Nguyen, Fabrication and Characterization of n-in 0.4 Ga 0.6 N/p-Si Solar Cells, International Thin Films Conference (TACT2011), Kenting, Pingtung, Taiwan, November 20-23, H. D. Trinh, E. Y. Chang, G. Brammertz, C. Y. Lu, H. Q. Nguyen, B. T. Tran, "Experimental and Modeling on Atomic Layer Deposition Al 2 O 3 /n-inas Metal-Oxide- Semiconductor Capacitor with Various Surface Treatments", The China Semiconductor Technology International Conference 2011 (CSTIC 2011), Shanghai, China, March 15-17, (Invited Talk) 9. Hai-Dang Trinh, Edward Yi Chang, Chih-Chieh Yu, Yuen-Yee Wong, Hong-Quan Nguyen, Kung-Liang Lin, Yueh-Chin Lin, Chien-I Kuo, Binh-Tinh Tran, Chi-Lang Nguyen, Yu-Sheng Chiu, Chen-Chen Chung, Characterization of Electrical Properties of Atomic Layer Deposition Al 2 O 3 on n-in 0.53 Ga 0.47 As Using Conductance Method and Simulation, 2011 Annual Meeting of the Physical Society of ROC, Tainan, Taiwan, Jan. 25, /10

10 8. H. D. Trinh, E. Y. Chang, C. I. Kuo, H. Q. Nguyen, K. L. Lin, Y. Y. Wong, C. C. Chung, Y. C. Lin, C. H. Chang, Y. S. Chiu, B. T. Tran, and C. L. Nguyen, Atomic Layer Deposition of Al 2 O 3 /n-in x Ga 1-x As structures with different In content (x = ), the 38 th International Symposium on Compound Semiconductors (ISCS 2011), Berlin, Germany, May 22-26, Binh-Tinh Tran, Edward-Yi Chang, Kung-Liang Lin, Hong-Quan Nguyen and Hai-Dang Trinh, "The growth of high quality In 0.4 Ga 0.6 N film on Si(111) substrate by MOCVD for photovoltaic device applications", 2011 Annual Meeting of the Physical Society of ROC in Taipei, Taiwan, January 25-27, Kung-Liang Lin, Binh-Tinh Tran, Edward-Yi Chang, "Electrical and Optical Characterization of GaN film grown on patterned Si (111) substrates", 219 th ECS Meeting, Montreal, QC, Canada, May 1-6, Binh-Tinh Tran, Edward-Yi Chang, Kung-Liang Lin, Hong-Quan Nguyen and Hai-Dang Trinh, "The growth of high quality In 0.4 Ga 0.6 N film on Si (111) substrate without phase separation for photovoltaic device applications", 219 th ECS Meeting, Montreal, QC, Canada, May 1-6, B. T. Tran, E. Y. Chang, K. L. Lin, K. C. Sahoo, H. Y. Lin, N. M. Thuy, H. Q. Nguyen and H. D. Trinh, "Influence of growth temperature of AlN buffer layers on the crystalline quality of GaN film grown on Si (111) by metal organic chemical vapor deposition", the 5 th International Workshop on Advanced Materials Science and Nanotechnology, Hanoi, Vietnam, November 09-12, Kung-Liang Lin, Tien-Tung Luong, Chen-Hao Chiang, Yuen-Yee Wong, Yu-Lin Hsiao, Wei-Ching Huang, Jung-Chi Lu, Binh-Tinh Tran, Chen-Chen Chung and Edward-Yi Chang, "Electrical and Optical Characterization of GaN film grown on patterned Si(111) substrates", Annual Meeting of the Physical Society of Republic of China, Changhua, Taiwan, January 19-21, Y. L. Hsiao, K. L. Lin, W. C. Huang, L. T. Tung, T. B. Tinh, E. Y. Chang, C. H. Chiang, W. I. Lee, J. F. Chen, Gavin Liu, Improvement of the GaN film quality grown on 4 inch Si(111) substrates using multi-aln buffer layers, Annual Meeting of the Physical Society of Republic of China, Changhua, Taiwan, January 19-21, Hai-Dang Trinh, Edward Yi Chang, Yuen-Yee Wong, Binh-Tinh Tran, Chih-Chieh Yu, Chi-Chung Kei, Wen-Hao Cho, Impact of surface treatment and self-cleaning effects on atomic layer deposition (ALD) of Al 2 O 3 on InAs, 9 th Conference on Atomic Layer Deposition, Monterey, California, USA, July 19-22, /10