High Transmittance Ti doped ITO Transparent Conducting Layer Applying to UV-LED. Y. H. Lin and C. Y. Liu

Save this PDF as:
 WORD  PNG  TXT  JPG

Size: px
Start display at page:

Download "High Transmittance Ti doped ITO Transparent Conducting Layer Applying to UV-LED. Y. H. Lin and C. Y. Liu"

Transcription

1 High Transmittance Ti doped ITO Transparent Conducting Layer Applying to UV-LED Y. H. Lin and C. Y. Liu Department of Chemical Engineering and Materials Engineering, National Central University, Jhongli, Taiwan 32001, R. O. C. Abstract: In this experiment, the optical and electrical properties of Indium Tin Oxide (ITO) thin films with different weight percentage of Ti were investigated. By controlling the weight percentage of Ti and the annealing ambient, the transmittance at 380 nm of Ti doped ITO thin film is 90.2 % and the resistivity is Ω-cm after 10 % Ti doping and annealing the thin film at 500 in vacuum. Besides basic physical properties measurements, the Ti doped ITO thin film was applied to UV-LED, too. The output power was enhanced 52.1 % by applying Ti doped ITO thin films to be the transparent conducting layer for p-contact metal layer. Introduction: In many optoelectronic devices, transparent conducting layer (TCL) plays an important role due to it supplies a way to be a conducting electrode or a current spreading layer but it does not absorb the light. Commonly TCL are ITO, ZnO, and AZO which have low resistivity and high transmittance in visible region. Especially, ITO which contains 90 % In 2 O 3 and 10 % SnO 2 is a widely used transparent conducting layer. Nowadays, ultra violet optical devices, such like UV-LED, are investigated to enhance the light output power or some spectacular purpose that the optical properties in UV or near UV region are more important 1,2. According to Kuo s results 3, the light output power of near-uv LED (at 400 nm) could be enhanced 1

2 36 % by applying to ITO instead of Ni/Au as ohmic contact layer due to ITO has higher transmittance performance at 400 nm. Yet, the band gap of ITO is about 3 ev that it absorbs the light which wavelength shorter than 400 nm seriously that the transmittance of ITO in UV region would be low 4. In our previously study, ITO transmittance diagram would be affected by doping metals, and we found the band gap is enlarged by Experiment: In this experiment, Ti:ITO thin film was made by depositing ITO and metal thin films alternatively by sputtering system and the concentration of Ti was controlled by different thickness of Ti. Before the thin films deposition, quartz substrates were immersed in ACE, IPA, and DI water and ultra-sonically cleaned for 5 minutes, 2 minutes, and 5 minutes, respectively, and then Ti and ITO thin films were deposited on quartz substrates by sputtering system. 50 W DC power was used to deposit the Ti (99.99 %) and 100 W RF power was used to deposit ITO (In 2 O 3 90 % and SnO 2 10 %). After thin films deposition, all samples were annealed at 300 to 500 in oxygen and vacuum ambient for 30 minutes. Reflectivity was measured by JASCO 470 spectrometer and Van der Pauw method was used to determine the carrier concentration, hall mobility, and resistivity of ITO/Ti multi-layers. Fig. 1 shows the resistivity of (a) pure ITO and (b) Ti:ITO (10 wt.%) annealed in the oxygen and the vacuum ambient at different temperatures. The lowest resistivity of Ti:ITO (10 wt.%) is Ω-cm when annealed at 400 in vacuum. For both cases, the resistivity of samples annealed in the vacuum ambient are lower than the resistivity of the samples annealed in the oxygen ambient due to ITO thin film would create more free carriers when partial pressure of oxygen in the ambient is low. 2

3 Two electrical conduction mechanisms of ITO are reported; (1) substitution of Sn atoms by In atoms, and (2) oxygen vacancies formation, both mechanisms create the free electrons. While ITO annealed at the oxygen ambient, the high oxygen concentration at the ambient caused the decrease of the oxygen vacancies in ITO. As a result, the carrier concentration in the ITO samples annealed in oxygen ambient would be greatly decreased, as shown in Fig. 2. Although carrier concentration of the thin films were enhanced slightly or remained the same with as-deposited thin films, the mobility of the thin films were increasing with increasing temperatures that the resistivity could be lowered, as shown in Fig. 3. Figure 4 shows the transmittance of ITO and Ti:ITO with different annealing temperatures. The transmittance of the as-deposited Ti:ITO thin film is small due to the absorption of sandwiched Ti layers. Upon the annealing process, the sandwiched Ti layers diffused and reacted with ITO to form TiO 2. Therefore, the transmittance of Ti:ITO increases with increasing annealing temperature and the transmittances of thin films could be enhanced by Ti doping into ITO film and annealing. The highest transmittance could reach 90.2 % after annealing at 500. According to the transmittance results, the band gap of thin films could be calculated from the follow relations T=B exp(- αt) and (αhυ) 2 =B (hυ-eg). Where T is transmittance, B is edge width parameter, α is absorption coefficient, h is Planck s constant, υ is wave frequency, and Eg is band gap. When the incident light energy is higher than the band gap of the thin film, the band transition would occur, and the transmittance would be decreased seriously that we can calculate the band gap energy by plotting (αhυ) 2 versus hυ. From the 3

4 calculation results, the band gap of pure ITO and Ti:ITO thin films annealed at 500 are 3.1 ev and 3.3 ev, respectively 4. Furthermore, when the free electrons were created, they would occupy the bottom energy level of the conduction band, and then the electrons in the valence band have to absorb higher energy of the incident light to transit to the higher energy level of the conduction band, so called Burstein Moss effect 5. The Burstein Moss effect also observed in Figure 4, the band edge of Ti:ITO samples annealed in vacuum are smaller than the Ti:ITO samples annealed in oxygen. From carrier concentration results, the band edge blue shifted is due the higher carrier would be created when Ti:ITO thin films under lower oxygen ambient. To evaluate the Ti:ITO used as the current spreading layer for UV LED, Ti:ITO TCL is processed on 380 nm UV LED. Ni/ITO (10 nm/200 nm) and Ni/Ti:ITO (10 %) (2 nm/200 nm) were deposited on p-gan as the current spreading layer. The Ni layer serves as adhesion layer and contact layer. Then, Ti/Al/Ti/Au (200 nm/1 μm/500 nm/200 nm) multi-layer was deposited on the n-gan layer for the n-pad. Figure 5 is the L-I-V curve of the UV LED chips with ITO and Ti:ITO current spreading layers. LED chip with Ti:ITO current spreading layer has lower forward voltage than that of the pure ITO current spreading layer might due to p-gan/ni/ti:ito has lower contact resistance than p-gan/ni/ito. Yet, remarkably, the photo current of UV LED chip with Ti:ITO TCL is enhanced by 52.1 %. Because of the transmittance difference between ITO and Ti:ITO at 380 nm is around 20 % but the light output power is enhanced by 52.1 %, the transmittance difference should not be the only reason for the enhancement, there might be some other electrical properties affect the light output power results. Figure 6 are the emission intensity distribution of UV LED chips with Ti:ITO 4

5 and ITO current spreading layer under 250 ma. Suppose to the intensity is proportional to the current injecting into multi quantum well 6, it shows that ITO thin film could spread the injecting current better than Ti:ITO thin film due to p-gan/ni/ito has higher contact resistance because of the resistivity of these two films are similar. Figure 7 show the thermal images of UV-LED chips with different current spreading layer at 250 ma current injecting, the highest temperature of chip with ITO and Ti:ITO current spreading layer are 39.5 and 39.2, respectively. Comparing to chip with Ti:ITO thin film, chip with ITO thin film has higher temperature, since the heat spreading ability should be the same between these two schemes that the higher temperature and poor temperature distribution should be due to ITO/p-GaN has worse contact resistance and produces more Joule heat and then increases the temperature. The higher junction temperature results in the peak wavelength of chip red shifted more seriously 7, as shown in Figure 8. The higher junction temperature would also decrease the recombination efficiency of the quantum well and result in the UV LED chips with Ti:ITO current spreading layer has higher output power under the same injecting current than chips with ITO current spreading layer, as shown in Figure 9. Conclusion: In this study, after annealing, the transmittance of ITO thin film can be enhanced after inserting Ti layers and also remaining the low resistivity. During the thermal process, the oxygen partial pressure in the annealing ambient is a variable to affect the carrier concentration, and it also affects the transmittance spectrum. Applying Ti:ITO (10%) annealed at 500 in vacuum, which has highest transmittance at 380 nm(90.2 %) and lowest resistivity ( Ω-cm), to be the current spreading layer for UV LED (380 nm), the photo current could be enhanced 52.1 % comparing 5

6 with pure ITO. From light distribution and thermal image, the transmittance enhancement and lower Joule heat generation are the main reasons for the light output power enhancement. Acknowledgement: Reference: 1. Enhanced light output of GaN-based power LEDs with transparent Al-doped ZnO current spreading layer, IEEE Photonics Technology Letters, 18, No. 1 (2006) 2. AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers, Applied Physics Letters, 85, No. 20 (2004) 3. Nitride-based near-ultraviolet LEDs with an ITO transparent contact, Materials Science and Engineering, B106,69 72, (2004) 4. Highly reflective and low-resistant Ni/Au/ITO/Ag ohmic contact on p-type GaN, Electrochemical and Solid-state Letters, 7, G102-G104 (2004). 5. Effects of electron concentration on the optical absorption edge of InN, Applied Physics Letters, 84, No Efficiency of GaN/InGaN light-emitting diodes with interdigitated mesa geometry Applied Physics Letters, 79, No.13, 1936 (2001) 7. Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods, Applied Physics Letters, 86, (2005) 6

7 Figures: (a) ( ) (b) ( ) Figure 1 7

8 (a) ( ) (b) ( ) Figure 2 8

9 (a) ( ) Figure 3 9

10 (a) (b) Figure 4 10

11 Figure 5 Figure 6 11

12 Figure 7 12

13 Figure 8 Figure 9 13

14 Captions: Figure 1: Resistivity of (a) ITO and (b) Ti:ITO (10 %) annealed in oxygen and vacuum ambient at different temperatures. Figure 2: Carrier concentration of (a) ITO and (b) Ti:ITO (10 %) annealed in oxygen and vacuum ambient at different temperatures. Figure 3: Hall measurement results of (a) ITO and (b) Ti:ITO (10 %) annealed in oxygen and vacuum ambient at different temperatures. Figure 4: Transmittance results of Ti:ITO (10 %) thin films annealed in (a) oxygen and (b) vacuum. Figure 5: LIV curve of UV LED with ITO and Ti:ITO current spreading layer Figure 6: Relative photo current distribution of UV LED chip under injecting 250 ma current. Figure 7: Thermal image of UV LED chip with (a) ITO and (b) Ti:ITO current spreading layer. Figure 8: Peak emission wavelength versus different injecting current of different TCL. Figure 9: Photo current distribution of UV LED chip under injecting 250 ma current. 14

ZnO-based Transparent Conductive Oxide Thin Films

ZnO-based Transparent Conductive Oxide Thin Films IEEE EDS Mini-colloquium WIMNACT 32 ZnO-based Transparent Conductive Oxide Thin Films Weijie SONG Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, P. R. China

More information

ISSN: ISO 9001:2008 Certified International Journal of Engineering and Innovative Technology (IJEIT) Volume 3, Issue 6, December 2013

ISSN: ISO 9001:2008 Certified International Journal of Engineering and Innovative Technology (IJEIT) Volume 3, Issue 6, December 2013 ISSN: 2277-3754 Fabrication and Characterization of Flip-Chip Power Light Emitting Diode with Backside Reflector Ping-Yu Kuei, Wen-Yu Kuo, Liann-Be Chang, Tung-Wuu Huang, Ming-Jer Jeng, Chun-Te Wu, Sung-Cheng

More information

Structural and Optical Properties of MnO 2 : Pb Nanocrystalline Thin Films Deposited By Chemical Spray Pyrolysis

Structural and Optical Properties of MnO 2 : Pb Nanocrystalline Thin Films Deposited By Chemical Spray Pyrolysis IOSR Journal of Engineering (IOSRJEN) e-issn: 2250-3021, p-issn: 2278-8719 Vol. 3, Issue 4 (April. 2013), V4 PP 52-57 Structural and Optical Properties of MnO 2 : Pb Nanocrystalline Thin Films Deposited

More information

Grundlagen der LED Technik

Grundlagen der LED Technik www.osram-os.com Grundlagen der LED Technik Dr. Berthold Hahn 8.3.14 Ilmenau 1 Dateienname ORG CODE Initiale Titel/Veranstaltung TT/MM/JJJJ Grundlagen der LED Technik 1. Einführung 2. Lichterzeugung im

More information

Correlation Between Energy Gap and Defect Formation of Al Doped Zinc Oxide on Carbon Doped Silicon Oxide

Correlation Between Energy Gap and Defect Formation of Al Doped Zinc Oxide on Carbon Doped Silicon Oxide TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS Vol. 15, No. 4, pp. 207-212, August 25, 2014 Regular Paper pissn: 1229-7607 eissn: 2092-7592 DOI: http://dx.doi.org/10.4313/teem.2014.15.4.207 Correlation

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION In the format provided by the authors and unedited. ARTICLE NUMBER: 16178 DOI: 10.1038/NENERGY.2016.178 Enhanced Stability and Efficiency in Hole-Transport Layer Free CsSnI3 Perovskite Photovoltaics Supplementary

More information

Thin film silicon technology. Cosimo Gerardi 3SUN R&D Tech. Coordinator

Thin film silicon technology. Cosimo Gerardi 3SUN R&D Tech. Coordinator Thin film silicon technology Cosimo Gerardi 3SUN R&D Tech. Coordinator 1 Outline Why thin film Si? Advantages of Si thin film Si thin film vs. other thin film Hydrogenated amorphous silicon Energy gap

More information

High-efficiency GaN-based light-emitting diodes fabricated with identical Ag contact formed on both n- and p-layers

High-efficiency GaN-based light-emitting diodes fabricated with identical Ag contact formed on both n- and p-layers High-efficiency GaN-based light-emitting diodes fabricated with identical Ag contact formed on both n- and p-layers Munsik Oh and Hyunsoo Kim * School of Semiconductor and Chemical Engineering and Semiconductor

More information

Mn DOPED SnO2 Semiconducting Magnetic Thin Films Prepared by Spray Pyrolysis Method

Mn DOPED SnO2 Semiconducting Magnetic Thin Films Prepared by Spray Pyrolysis Method International Journal of Scientific & Engineering Research Volume 2, Issue 4, April-2011 1 Mn DOPED SnO2 Semiconducting Magnetic Thin Films Prepared by Spray Pyrolysis Method K.Vadivel, V.Arivazhagan,

More information

Fabrication of the Crystalline ITO Pattern by Picosecond Laser with a Diffractive Optical Element

Fabrication of the Crystalline ITO Pattern by Picosecond Laser with a Diffractive Optical Element Fabrication of the Crystalline ITO Pattern by Picosecond Laser with a Diffractive Optical Element C.W. Chien and C.W. Cheng* ITRI South Campus, Industrial Technology Research Institute, No. 8, Gongyan

More information

Growth of copper oxide thin films for possible transparent electronic applications

Growth of copper oxide thin films for possible transparent electronic applications Chapter 4 Growth of copper oxide thin films for possible transparent electronic applications 4.1 Introduction The first reported semiconductor metal oxide was cuprous oxide in 1917 by Kennard et al [230].

More information

Citation JOURNAL OF APPLIED PHYSICS (1995),

Citation JOURNAL OF APPLIED PHYSICS (1995), Title Copper nitride thin films prepared sputtering Author(s) MARUYAMA, T; MORISHITA, T Citation JOURNAL OF APPLIED PHYSICS (1995), Issue Date 1995-09-15 URL http://hdl.handle.net/2433/43537 Copyright

More information

Nanoscience in (Solar) Energy Research

Nanoscience in (Solar) Energy Research Nanoscience in (Solar) Energy Research Arie Zaban Department of Chemistry Bar-Ilan University Israel Nanoscience in energy conservation: TBP 10 TW - PV Land Area Requirements 10 TW 3 TW 10 TW Power Stations

More information

In-Situ Characterization During MOVPE Growth of III-Nitrides using Reflectrometry

In-Situ Characterization During MOVPE Growth of III-Nitrides using Reflectrometry 18 Annual Report 1999, Dept. of Optoelectronics, University of Ulm In-Situ Characterization During MOVPE Growth of III-Nitrides using Reflectrometry Christoph Kirchner and Matthias Seyboth The suitability

More information

Light enhancement by the formation of an Al-oxide honeycomb nano-structure on the n-gan surface of thin-gan light-emitting diodes

Light enhancement by the formation of an Al-oxide honeycomb nano-structure on the n-gan surface of thin-gan light-emitting diodes Light enhancement by the formation of an Al-oxide honeycomb nano-structure on the n-gan surface of thin-gan light-emitting diodes C. L. Lin, P. H. Chen Department of Chemical and Materials Engineering,

More information

Deposition-Temperature Effects on AZO Thin Films Prepared by RF Magnetron Sputtering and Their Physical Properties

Deposition-Temperature Effects on AZO Thin Films Prepared by RF Magnetron Sputtering and Their Physical Properties Journal of the Korean Physical Society, Vol. 49, December 2006, pp. S584 S588 Deposition-Temperature Effects on AZO Thin Films Prepared by RF Magnetron Sputtering and Their Physical Properties Jeung Hun

More information

Sputtered Zinc Oxide Films for Silicon Thin Film Solar Cells: Material Properties and Surface Texture

Sputtered Zinc Oxide Films for Silicon Thin Film Solar Cells: Material Properties and Surface Texture Poster FVS Workshop 2002 Sputtered Zinc Oxide Films for Silicon Thin Film Solar Cells: Material Properties and Surface Texture Texture etching of sputtered ZnO:Al films has opened up a variety of possibilities

More information

Electrical, optical and structural properties of transparent and conducting ZnO thin. films doped with Al and F by rf magnetron sputter

Electrical, optical and structural properties of transparent and conducting ZnO thin. films doped with Al and F by rf magnetron sputter Electrical, optical and structural properties of transparent and conducting ZnO thin films doped with Al and F by rf magnetron sputter B.G. Choi 1), I.H. Kim *, D.H Choi 1), K.S. Lee, T.S. Lee, B. Cheong,

More information

HOMEWORK 4 and 5. March 15, Homework is due on Monday March 30, 2009 in Class. Answer the following questions from the Course Textbook:

HOMEWORK 4 and 5. March 15, Homework is due on Monday March 30, 2009 in Class. Answer the following questions from the Course Textbook: HOMEWORK 4 and 5 March 15, 2009 Homework is due on Monday March 30, 2009 in Class. Chapter 7 Answer the following questions from the Course Textbook: 7.2, 7.3, 7.4, 7.5, 7.6*, 7.7, 7.9*, 7.10*, 7.16, 7.17*,

More information

Amorphous Silicon Solar Cells

Amorphous Silicon Solar Cells The Birnie Group solar class and website were created with much-appreciated support from the NSF CRCD Program under grants 0203504 and 0509886. Continuing Support from the McLaren Endowment is also greatly

More information

Transmission Mode Photocathodes Covering the Spectral Range

Transmission Mode Photocathodes Covering the Spectral Range Transmission Mode Photocathodes Covering the Spectral Range 6/19/2002 New Developments in Photodetection 3 rd Beaune Conference June 17-21, 2002 Arlynn Smith, Keith Passmore, Roger Sillmon, Rudy Benz ITT

More information

INFLUENCE OF THICKNESS VARIATION ON THE OPTICAL PROPERTIES OF ZnO THIN FILMS PREPARED BY THERMAL EVAPORATION METHOD

INFLUENCE OF THICKNESS VARIATION ON THE OPTICAL PROPERTIES OF ZnO THIN FILMS PREPARED BY THERMAL EVAPORATION METHOD Journal of Electron Devices, Vol. 0, 20, pp. 448-455 JED [ISSN: 682-3427 ] INFLUENCE OF THICKNESS VARIATION ON THE OPTICAL PROPERTIES OF ZnO THIN FILMS PREPARED BY THERMAL EVAPORATION METHOD Farzana Chowdhury

More information

EFFECT OF DEPOSITION TIME ON CHEMICAL BATH DEPOSITION PROCESS AND THICKNESS OF BaSe THIN FILMS.

EFFECT OF DEPOSITION TIME ON CHEMICAL BATH DEPOSITION PROCESS AND THICKNESS OF BaSe THIN FILMS. Journal of Optoelectronics and Biomedical Materials Vol. 3 Issue 4, October-December 2011 p. 81-85 EFFECT OF DEPOSITION TIME ON CHEMICAL BATH DEPOSITION PROCESS AND THICKNESS OF BaSe THIN FILMS. N.A. OKEREKE

More information

Schottky Tunnel Contacts for Efficient Coupling of Photovoltaics and Catalysts

Schottky Tunnel Contacts for Efficient Coupling of Photovoltaics and Catalysts Schottky Tunnel Contacts for Efficient Coupling of Photovoltaics and Catalysts Christopher E. D. Chidsey Department of Chemistry Stanford University Collaborators: Paul C. McIntyre, Y.W. Chen, J.D. Prange,

More information

Yung-Hui Yeh, and Bo-Cheng Kung Display Technology Center (DTC), Industrial Technology Research Institute, Hsinchu 310, Taiwan

Yung-Hui Yeh, and Bo-Cheng Kung Display Technology Center (DTC), Industrial Technology Research Institute, Hsinchu 310, Taiwan Amorphous In 2 O 3 -Ga 2 O 3 -ZnO Thin Film Transistors and Integrated Circuits on Flexible and Colorless Polyimide Substrates Hsing-Hung Hsieh, and Chung-Chih Wu* Graduate Institute of Electronics Engineering,

More information

"ITO Film Trend for Touch Panel Applications"

ITO Film Trend for Touch Panel Applications AIMCAL Web Coating Conference 2011 October 23-26 Reno, Nevada USA 1 "ITO Film Trend for Touch Panel Applications" Teijin Chemicals Ltd. Haruhiko Itoh 2 Content 1. Structure and Features of TCF 2. Touch

More information

Ag Ti Alloy Used in ITO Metal ITO Transparency Conductive Thin Film with Good Durability against Moisture

Ag Ti Alloy Used in ITO Metal ITO Transparency Conductive Thin Film with Good Durability against Moisture Materials Transactions, Vol. 46, No. 11 (2005) pp. 2536 to 25 #2005 The Japan Institute of Metals EXPRESS REGULAR ARTICLE Ag Ti Alloy Used in ITO Metal ITO Transparency Conductive Thin Film with Good Durability

More information

A NOVEL METHOD FOR THE IMPROVEMENT IN THERMOELECTRIC PROPERTY OF TIN OXIDE THIN FILMS AND ITS APPLICATION IN GAS SENSING

A NOVEL METHOD FOR THE IMPROVEMENT IN THERMOELECTRIC PROPERTY OF TIN OXIDE THIN FILMS AND ITS APPLICATION IN GAS SENSING INTERNATIONAL JOURNAL ON SMART SENSING AND INTELLIGENT SYSTEMS, VOL. 1, NO. 2, JUNE 2008 A NOVEL METHOD FOR THE IMPROVEMENT IN THERMOELECTRIC PROPERTY OF TIN OXIDE THIN FILMS AND ITS APPLICATION IN GAS

More information

Growth Of TiO 2 Films By RF Magnetron Sputtering Studies On The Structural And Optical Properties

Growth Of TiO 2 Films By RF Magnetron Sputtering Studies On The Structural And Optical Properties Journal of Multidisciplinary Engineering Science and Technology (JMEST) Growth Of TiO 2 Films By RF Magnetron Sputtering Studies On The Structural And Optical Properties Ahmed K. Abbas 1, Mohammed K. Khalaf

More information

OPTICAL, ELECTRICAL AND STRUCTURAL PROPERTIES OF PECVD QUASI EPITAXIAL PHOSPHOROUS DOPED SILICON FILMS ON CRYSTALLINE SILICON SUBSTRATE

OPTICAL, ELECTRICAL AND STRUCTURAL PROPERTIES OF PECVD QUASI EPITAXIAL PHOSPHOROUS DOPED SILICON FILMS ON CRYSTALLINE SILICON SUBSTRATE OPTICAL, ELECTRICAL AN STRUCTURAL PROPERTIES OF PECV QUASI EPITAXIAL PHOSPHOROUS OPE SILICON FILMS ON CRYSTALLINE SILICON SUBSTRATE Mahdi Farrokh-Baroughi, Hassan El-Gohary, and Siva Sivoththaman epartment

More information

HIGH-PERFORMANCE blue and green light emitting

HIGH-PERFORMANCE blue and green light emitting IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 5, NO. 2, JUNE 2005 277 ESD Engineering of Nitride-Based LEDs Y. K. Su, S. J. Chang, S. C. Wei, Shi-Ming Chen, and Wen-Liang Li Abstract GaN-based

More information

Optical Properties of Vacuum Evaporated WO 3 Thin Films

Optical Properties of Vacuum Evaporated WO 3 Thin Films Abstract Research Journal of Chemical Sciences ISSN 2231-606X. Optical Properties of Vacuum Evaporated WO 3 Thin Films Rao M.C. 1 and Hussain O.M. 2 1 Department of Physics, Andhra Loyola College, Vijayawada

More information

Studies on temperature and thickness dependent electrical resistance and conductivity of SnO 2 thin films

Studies on temperature and thickness dependent electrical resistance and conductivity of SnO 2 thin films Available online atwwwscholarsresearchlibrarycom Archives of Applied Science Research, 2015, 7 (4):71-75 (http://scholarsresearchlibrarycom/archivehtml) ISSN 0975-508X CODEN (USA) AASRC9 Studies on temperature

More information

Chemical analysis of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures

Chemical analysis of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures Optica Applicata, Vol. XLIII, No. 1, 213 DOI: 1.277/oa1319 Chemical analysis of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures WOJCIECH MACHERZYŃSKI *, KORNELIA INDYKIEWICZ, BOGDAN PASZKIEWICZ

More information

Development of Dye-Sensitized Solar Cell (DSSC) Using Patterned Indium Tin Oxide (ITO) Glass

Development of Dye-Sensitized Solar Cell (DSSC) Using Patterned Indium Tin Oxide (ITO) Glass Development of Dye-Sensitized Solar Cell (DSSC) Using Patterned Indium Tin Oxide (ITO) Glass Fabrication and testing of DSSC M. Mazalan*, M. Mohd Noh, Y.Wahab, M. N. Norizan, I. S. Mohamad Advanced Multidisciplinary

More information

Law, T.K., Lim, F., Li, Y., Teo, J.W. R. and Wei, S. (2017) Effects of Humidity on the Electro-Optical-Thermal Characteristics of High-Power LEDs. In: 2016 IEEE 18th Electronics Packaging Technology Conference

More information

The growth of patterned ceramic thin films from polymer precursor solutions Göbel, Ole

The growth of patterned ceramic thin films from polymer precursor solutions Göbel, Ole University of Groningen The growth of patterned ceramic thin films from polymer precursor solutions Göbel, Ole IMPORTANT NOTE: You are advised to consult the publisher's version (publisher's PDF) if you

More information

Annealing effects on the Interband Transition and Optical constants of cobalt doped Cadmium oxide Thin Films

Annealing effects on the Interband Transition and Optical constants of cobalt doped Cadmium oxide Thin Films International Letters of Chemistry, Physics and Astronomy Online: 2015-01-04 ISSN: 2299-3843, Vol. 43, pp 81-90 doi:10.18052/www.scipress.com/ilcpa.43.81 2015 SciPress Ltd., Switzerland Annealing effects

More information

Influence of Thermal Annealing on the Structural and Optical Properties of Lead Oxide Thin Films Prepared by Chemical Bath Deposition Technique

Influence of Thermal Annealing on the Structural and Optical Properties of Lead Oxide Thin Films Prepared by Chemical Bath Deposition Technique Influence of Thermal Annealing on the Structural and Optical Properties of Lead Oxide Thin Films Prepared by Chemical Bath Deposition Technique D.D.O. Eya, Ph.D. Department of Physics, Federal University

More information

DEVELOPMENT OF HIGH EFFICIENCY FLEXIBLE CdTe SOLAR CELLS

DEVELOPMENT OF HIGH EFFICIENCY FLEXIBLE CdTe SOLAR CELLS DEVELOPMENT OF HIGH EFFICIENCY FLEXIBLE CdTe SOLAR CELLS A.Romeo, M. Arnold, D.L. Bätzner, H. Zogg and A.N. Tiwari* Thin Films Physics Group, Laboratory for Solid State Physics, Swiss Federal Institute

More information

The Effect of Deposition Rate on Electrical, Optical and Structural Properties of ITO Thin Films

The Effect of Deposition Rate on Electrical, Optical and Structural Properties of ITO Thin Films http://www.e-journals.net CODEN ECJHAO E- Chemistry Vol. 2, No. 3, pp 171-177, June 2005 The Effect of Deposition Rate on Electrical, Optical and Structural Properties of ITO Thin Films P.S.RAGHUPATHI,

More information

Thickness and composition analysis of thin film samples using FP method by XRF analysis

Thickness and composition analysis of thin film samples using FP method by XRF analysis Technical articles Thickness and composition analysis of thin film samples using FP method by XRF analysis Hikari Takahara* 1. Introduction X-ray fluorescence spectroscopy (XRF) is an elemental quantification

More information

Supplementary Information

Supplementary Information Supplementary Information Negative voltage modulated multi-level resistive switching by using a Cr/BaTiO x /TiN structure and quantum conductance through evidence of H 2 O 2 sensing mechanism Somsubhra

More information

Developing Ohmic Contacts to Gallium Nitride. for High Temperature Applications. Shirong Zhao

Developing Ohmic Contacts to Gallium Nitride. for High Temperature Applications. Shirong Zhao Developing Ohmic Contacts to Gallium Nitride for High Temperature Applications by Shirong Zhao A Dissertation Presented in Partial Fulfillment of the Requirements for the Degree Doctor of Philosophy Approved

More information

LOW TEMPERATURE PHOTONIC SINTERING FOR PRINTED ELECTRONICS. Dr. Saad Ahmed XENON Corporation November 19, 2015

LOW TEMPERATURE PHOTONIC SINTERING FOR PRINTED ELECTRONICS. Dr. Saad Ahmed XENON Corporation November 19, 2015 LOW TEMPERATURE PHOTONIC SINTERING FOR PRINTED ELECTRONICS Dr. Saad Ahmed XENON Corporation November 19, 2015 Topics Introduction to Pulsed Light Photonic sintering for Printed Electronics R&D Tools for

More information

Structure and optical properties of M/ZnO (M=Au, Cu, Pt) nanocomposites

Structure and optical properties of M/ZnO (M=Au, Cu, Pt) nanocomposites Solar Energy Materials & Solar Cells 8 () 339 38 Structure and optical properties of M/ (M=Au, Cu, Pt) nanocomposites U. Pal a,b, *, J. Garc!ıa-Serrano a, G. Casarrubias-Segura a, N. Koshizaki c, T. Sasaki

More information

Hall coefficient, mobility and carrier concentration as a function of composition and thickness of Zn-Te thin films

Hall coefficient, mobility and carrier concentration as a function of composition and thickness of Zn-Te thin films Available online at www.pelagiaresearchlibrary.com Advances in Applied Science Research, 2015, 6(4):215-220 ISSN: 0976-8610 CODEN (USA): AASRFC Hall coefficient, mobility and carrier concentration as a

More information

Impurity free vacancy disordering of InGaAs quantum dots

Impurity free vacancy disordering of InGaAs quantum dots JOURNAL OF APPLIED PHYSICS VOLUME 96, NUMBER 12 15 DECEMBER 2004 Impurity free vacancy disordering of InGaAs quantum dots P. Lever, H. H. Tan, and C. Jagadish Department of Electronic Materials Engineering,

More information

Ex-situ Ohmic Contacts to n-ingaas

Ex-situ Ohmic Contacts to n-ingaas High Doping Effects on In-situ and Ex-situ Ohmic Contacts to n-ingaas Ashish Baraskar*, Mark A. Wistey, Vibhor Jain, Uttam Singisetti, Greg Burek, Brian J. Thibeault, Arthur C. Gossard and Mark J. W. Rodwell

More information

The Effects of Sapphire Substrates Processes to the LED Efficiency

The Effects of Sapphire Substrates Processes to the LED Efficiency The Effects of Sapphire Substrates Processes to the LED Efficiency Hua Yang*, Yu Chen, Libin Wang, Xiaoyan Yi, Jingmei Fan, Zhiqiang Liu, Fuhua Yang, Liangchen Wang, Guohong Wang, Yiping Zeng, Jinmin Li

More information

Fabrication Technology

Fabrication Technology Fabrication Technology By B.G.Balagangadhar Department of Electronics and Communication Ghousia College of Engineering, Ramanagaram 1 OUTLINE Introduction Why Silicon The purity of Silicon Czochralski

More information

INFLUENCE OF TiO2 THIN FILM ANNEALING TEMPERATURE ON ELECTRICAL PROPERTIES SYNTHESIZED BY CVD TECHNIQUE

INFLUENCE OF TiO2 THIN FILM ANNEALING TEMPERATURE ON ELECTRICAL PROPERTIES SYNTHESIZED BY CVD TECHNIQUE INFLUENCE OF TiO2 THIN FILM ANNEALING TEMPERATURE ON ELECTRICAL PROPERTIES SYNTHESIZED BY CVD TECHNIQUE F. N. Mohamed, M. S. A. Rahim, N. Nayan, M. K. Ahmad, M. Z. Sahdan and J. Lias Faculty of Electrical

More information

Ultra High Barrier Coatings by PECVD

Ultra High Barrier Coatings by PECVD Society of Vacuum Coaters 2014 Technical Conference Presentation Ultra High Barrier Coatings by PECVD John Madocks & Phong Ngo, General Plasma Inc., 546 E. 25 th Street, Tucson, Arizona, USA Abstract Silicon

More information

Effects of CdCl 2 treatment on ultra-thin MOCVD-CdTe solar cells

Effects of CdCl 2 treatment on ultra-thin MOCVD-CdTe solar cells Effects of CdCl 2 treatment on ultra-thin MOCVD-CdTe solar cells A.J. Clayton, S. Babar, M.A. Baker, G. Kartopu, D.A. Lamb, V. Barrioz, S.J.C. Irvine Functional Thin Films, Thursday 17 th October 2013

More information

Improve the performance of MOCVD grown GaN-on-Si HEMT structure

Improve the performance of MOCVD grown GaN-on-Si HEMT structure Improve the performance of MOCVD grown GaN-on-Si HEMT structure Dr. Xiaoqing Xu Stanford Nanofabrication Facility Abstract The SNF installed a new metalorganic chemical vapor deposition (MOCVD) system

More information

GVB GmbH Solutions in Glass Nordstern-Park Herzogenrath Germany Fax

GVB GmbH Solutions in Glass Nordstern-Park Herzogenrath Germany Fax GVB GmbH Solutions in Glass Nordstern-Park 2 52134 Herzogenrath Germany +49 2406 665588-0 Fax +49 2406 665588-10 info@g-v-b.de www.g-v-b.de EN09 QUARTZ TUBE This standard quartz tube is a kind of clear

More information

THE PAST, PRESENT, AND FUTURE OF LIGHTING

THE PAST, PRESENT, AND FUTURE OF LIGHTING THE PAST, PRESENT, AND FUTURE OF LIGHTING WHY CARE ABOUT LIGHTING? Lighting Statistics 38% of industrial and commercial electricity use is for lighting. 10% to 20% of home electricity use is for lighting.

More information

Characterisation and Optimisation of AZO Thin Films Fabricated by Sol-Gel Methods By Weite Gu (N)

Characterisation and Optimisation of AZO Thin Films Fabricated by Sol-Gel Methods By Weite Gu (N) Characterisation and Optimisation of AZO Thin Films Fabricated by Sol-Gel Methods By Weite Gu (N) Fourth-year undergraduate project in Group B, 2014/2015 I hereby declare that, except where specifically

More information

OUTLINE. Preparation of III Nitride thin 6/10/2010

OUTLINE. Preparation of III Nitride thin 6/10/2010 Preparation of III Nitride thin films for LEDs Huaxiang Shen Supervisor: Dr. Adrian Kitai 1 2 Two kinds of EL devices Light emitting diodes Powder EL and thin film EL http://en.wikipedia.org/wiki/file:pnjunction

More information

Supporting Information for Manuscript B516757D

Supporting Information for Manuscript B516757D Supporting Information for Manuscript B516757D 1. UV-Vis absorption spectra Absorbance (a.u.) 0.4 0.2 5F 6F 7F 0.0 300 400 500 Wavelength (nm) Figure S1 UV-Vis spectra of, 5F, 6F and 7F in CHCl 3 solutions

More information

Australian Journal of Basic and Applied Sciences

Australian Journal of Basic and Applied Sciences ISSN:1991-8178 Australian Journal of Basic and Applied Sciences Journal home page: www.ajbasweb.com Sensing Behavior of CuO: NiO/PS Nanoparticles 1 Isam M.Ibrahim, 1 Yahya R.Hathal, 1 Fuad T.Ibrahim and

More information

R Sensor resistance (Ω) ρ Specific resistivity of bulk Silicon (Ω cm) d Diameter of measuring point (cm)

R Sensor resistance (Ω) ρ Specific resistivity of bulk Silicon (Ω cm) d Diameter of measuring point (cm) 4 Silicon Temperature Sensors 4.1 Introduction The KTY temperature sensor developed by Infineon Technologies is based on the principle of the Spreading Resistance. The expression Spreading Resistance derives

More information

A statistical parameter study of indium tin oxide thin films deposited by radio-frequency sputtering

A statistical parameter study of indium tin oxide thin films deposited by radio-frequency sputtering Thin Solid Films 476 (2005) 59 64 www.elsevier.com/locate/tsf A statistical parameter study of indium tin oxide thin films deposited by radio-frequency sputtering Seung-Ik Jun a, *, Timothy E. McKnight

More information

3.46 OPTICAL AND OPTOELECTRONIC MATERIALS

3.46 OPTICAL AND OPTOELECTRONIC MATERIALS Badgap Engineering: Precise Control of Emission Wavelength Wavelength Division Multiplexing Fiber Transmission Window Optical Amplification Spectrum Design and Fabrication of emitters and detectors Composition

More information

Structural and Optical Properties of Aluminium Antimonide Thin Films Deposited By Thermal Evaporation Method

Structural and Optical Properties of Aluminium Antimonide Thin Films Deposited By Thermal Evaporation Method Available online at www.scholarsresearchlibrary.com Scholars Research Library Archives of Physics Research, 2011, 2 (1): 146-153 (http://scholarsresearchlibrary.com/archive.html) ISSN 0976-0970 CODEN (USA):

More information

Surface Analysis of Electrochromic Switchable Mirror Glass Based on Magnesium-Nickel Thin Film in Accelerated Degradation Test

Surface Analysis of Electrochromic Switchable Mirror Glass Based on Magnesium-Nickel Thin Film in Accelerated Degradation Test Materials Transactions, Vol. 52, No. 3 (2011) pp. 464 to 468 #2011 The Japan Institute of Metals Surface Analysis of Electrochromic Switchable Mirror Glass Based on Magnesium-Nickel Thin Film in Accelerated

More information

Thin film CdS/CdTe solar cells: Research perspectives

Thin film CdS/CdTe solar cells: Research perspectives Solar Energy 80 (2006) 675 681 www.elsevier.com/locate/solener Thin film CdS/CdTe solar cells: Research perspectives Arturo Morales-Acevedo * CINVESTAV del IPN, Department of Electrical Engineering, Avenida

More information

Advances in Intense Pulsed Light Solutions For Display Manufacturing. XENON Corporation Dr. Saad Ahmed Japan IDW 2016

Advances in Intense Pulsed Light Solutions For Display Manufacturing. XENON Corporation Dr. Saad Ahmed Japan IDW 2016 Advances in Intense Pulsed Light Solutions For Display Manufacturing XENON Corporation Dr. Saad Ahmed Japan IDW 2016 Talk Outline Introduction to Pulsed Light Applications in Display UV Curing Applications

More information

Study on Infrared Absorption Characteristics of Ti and TiN x Nanofilms. Mingquan Yuan, Xiaoxiong Zhou, Xiaomei Yu

Study on Infrared Absorption Characteristics of Ti and TiN x Nanofilms. Mingquan Yuan, Xiaoxiong Zhou, Xiaomei Yu 10.119/1.36982 The Electrochemical Society Study on Infrared Absorption Characteristics of Ti and TiN x Nanofilms Mingquan Yuan, Xiaoxiong Zhou, Xiaomei Yu National Key Laboratory of Science and Technology

More information

Oxide Growth. 1. Introduction

Oxide Growth. 1. Introduction Oxide Growth 1. Introduction Development of high-quality silicon dioxide (SiO2) has helped to establish the dominance of silicon in the production of commercial integrated circuits. Among all the various

More information

Thin Films: Sputtering Systems (Jaeger Ch 6 & Ruska Ch 7,) Can deposit any material on any substrate (in principal) Start with pumping down to high

Thin Films: Sputtering Systems (Jaeger Ch 6 & Ruska Ch 7,) Can deposit any material on any substrate (in principal) Start with pumping down to high Thin Films: Sputtering Systems (Jaeger Ch 6 & Ruska Ch 7,) Can deposit any material on any substrate (in principal) Start with pumping down to high vacuum ~10-7 torr Removes residual gases eg oxygen from

More information

The most efficient way of transforming sunlight into heat

The most efficient way of transforming sunlight into heat The most efficient way of transforming sunlight into heat TiNOX, The Energy Trap Decisive for highest performance of a solar absorber plate is: - highest possible absorption of solar radiation - minimum

More information

Synthesis and characterization of Aln 2 O 4 indates, A ˆ Mg, Ca, Sr, Ba

Synthesis and characterization of Aln 2 O 4 indates, A ˆ Mg, Ca, Sr, Ba JOURNAL OF MATERIALS SCIENCE LETTERS 17 (1998) 619±623 Synthesis and characterization of Aln 2 O 4 indates, A ˆ Mg, Ca, Sr, Ba S. ESTHER DALI, V. V. S. S. SAI SUNDAR, M. JAYACHANDRAN, M. J. CHOCKALINGAM

More information

Nanoscale Imaging, Material Removal and Deposition for Fabrication of Cutting-edge Semiconductor Devices

Nanoscale Imaging, Material Removal and Deposition for Fabrication of Cutting-edge Semiconductor Devices Hitachi Review Vol. 65 (2016), No. 7 233 Featured Articles Nanoscale Imaging, Material Removal and Deposition for Fabrication of Cutting-edge Semiconductor Devices Ion-beam-based Photomask Defect Repair

More information

Available online at ScienceDirect. Energy Procedia 92 (2016 ) Mathieu Boccard*, Nathan Rodkey, Zachary C.

Available online at  ScienceDirect. Energy Procedia 92 (2016 ) Mathieu Boccard*, Nathan Rodkey, Zachary C. Available online at www.sciencedirect.com ScienceDirect Energy Procedia 92 (2016 ) 297 303 6th International Conference on Silicon Photovoltaics, SiliconPV 2016 High-mobility hydrogenated indium oxide

More information

Low contact resistance a-igzo TFT based on. Copper-Molybdenum Source/Drain electrode

Low contact resistance a-igzo TFT based on. Copper-Molybdenum Source/Drain electrode Low contact resistance a-igzo TFT based on Copper-Molybdenum Source/Drain electrode Shi-Ben Hu 1,Hong-Long Ning 1,2, Feng Zhu 1,Rui-QiangTao 1,Xian-Zhe Liu 1, Yong Zeng 1, Ri-Hui Yao 1, Lei Wang 1, Lin-Feng

More information

New Performance Levels for TPV Front Surface Filters

New Performance Levels for TPV Front Surface Filters LM-4K54 June 1, 24 New Performance Levels for TPV Front Surface Filters TD Rahmlow, JE Lazo-Wasem, EJ Gratrix, PM Fourspring, and DM DePoy NOTICE This report was prepared as an account of work sponsored

More information

Formation of and Light Emission from Si nanocrystals Embedded in Amorphous Silicon Oxides

Formation of and Light Emission from Si nanocrystals Embedded in Amorphous Silicon Oxides 10.1149/1.2392914, copyright The Electrochemical Society Formation of and Light Emission from Si nanocrystals Embedded in Amorphous Silicon Oxides D. Comedi a, O. H. Y. Zalloum b, D. E. Blakie b, J. Wojcik

More information

Synthesis and properties of Boron doped ZnO thin films by spray CVD technique at low substrate temperature

Synthesis and properties of Boron doped ZnO thin films by spray CVD technique at low substrate temperature Synthesis and properties of Boron doped ZnO thin films by spray CVD technique at low substrate temperature Sunanda C. Yadav* Thin film Physics laboratory, Department of Electronics, Shivaji University,

More information

VACUUM VIEWPORTS. Introduction... I 03 KF Viewports... I 09 I 01. VACUUM / Components & Consumables

VACUUM VIEWPORTS. Introduction... I 03 KF Viewports... I 09 I 01. VACUUM / Components & Consumables I VAUUM VIEWPORTS Introduction... I 03 KF Viewports... I 09 I I 01 Neyco manufactures a range of UHV viewports in F, ISO or KF flange styles including a variety of coatings to enhance performance. Materials

More information

Properties of TiN thin films grown on SiO 2 by reactive HiPIMS

Properties of TiN thin films grown on SiO 2 by reactive HiPIMS Properties of TiN thin films grown on SiO 2 by reactive HiPIMS Friðrik Magnus 1, Árni S. Ingason 1, Ólafur B. Sveinsson 1, S. Shayestehaminzadeh 1, Sveinn Ólafsson 1 and Jón Tómas Guðmundsson 1,2 1 Science

More information

Lecture 22: Integrated circuit fabrication

Lecture 22: Integrated circuit fabrication Lecture 22: Integrated circuit fabrication Contents 1 Introduction 1 2 Layering 4 3 Patterning 7 4 Doping 8 4.1 Thermal diffusion......................... 10 4.2 Ion implantation.........................

More information

Energy Efficient Glazing Design. John Ridealgh Off-Line Coatings Technology Group Pilkington European Technology Centre

Energy Efficient Glazing Design. John Ridealgh Off-Line Coatings Technology Group Pilkington European Technology Centre Energy Efficient Glazing Design John Ridealgh Off-Line Coatings Technology Group Pilkington European Technology Centre 2 John Ridealgh 30th November 2009 Talk Outline Pilkington Group Limited & NSG Group

More information

Experimental study on laser marking of alumina

Experimental study on laser marking of alumina Lasers in Manufacturing Conference 2015 Experimental study on laser marking of alumina J. Penide a*, F. Quintero a, F. Arias-González a, A. Fernández b, J. del Val a, R. Comesaña c, A. Riveiro a, F. Lusquiños

More information

CHARACTERIZATION AND PROPERTIES OF TITANIUM-VANADIUM OXIDE THIN FILMS PREPARED BY ArF LASER ABLATION

CHARACTERIZATION AND PROPERTIES OF TITANIUM-VANADIUM OXIDE THIN FILMS PREPARED BY ArF LASER ABLATION CHARACTERIZATION AND PROPERTIES OF TITANIUM-VANADIUM OXIDE THIN FILMS PREPARED BY ArF LASER ABLATION Radek FAJGAR a, Jaroslav KUPČÍK a, Jan ŠUBRT b and Filip NOVOTNÝ c a Institute of Chemical Process Fundamentals,

More information

The Effect of Thickness Nanoparticle ZnS Films on Optical Properties

The Effect of Thickness Nanoparticle ZnS Films on Optical Properties The Effect of Thickness Nanoparticle ZnS Films on Optical Properties Asel A. Jasib 1, Ali A. Yousif 2 1,2 Department of Physics, College of Education, University of Al-Mustansiriyah, Baghdad, Iraq asel.adel56@yahoo.com

More information

Vacuum deposition of TiN

Vacuum deposition of TiN J.Lorkiewicz DESY.27.10.02 Vacuum deposition of TiN (TiN coating of high power coupler elements as an anti-multipactor remedy at DESY) The scope of the project: - reducing secondary electron emission and

More information

MOVPE growth of GaN and LED on (1 1 1) MgAl

MOVPE growth of GaN and LED on (1 1 1) MgAl Journal of Crystal Growth 189/190 (1998) 197 201 MOVPE growth of GaN and LED on (1 1 1) Shukun Duan *, Xuegong Teng, Yutian Wang, Gaohua Li, Hongxing Jiang, Peide Han, Da-Cheng Lu National Integrated Optoelectronics

More information

Laser Spike Annealing for sub-20nm Logic Devices

Laser Spike Annealing for sub-20nm Logic Devices Laser Spike Annealing for sub-20nm Logic Devices Jeff Hebb, Ph.D. July 10, 2014 1 NCCAVS Junction Technology Group Semicon West Meeting July 10, 2014 Outline Introduction Pattern Loading Effects LSA Applications

More information

FABRICATION OF COBALT DOPED TIN OXIDE THIN FILM FOR DYE-SENSITIZED SOLAR CELL USING SPRAY PYROLYSIS DEPOSITION METHOD

FABRICATION OF COBALT DOPED TIN OXIDE THIN FILM FOR DYE-SENSITIZED SOLAR CELL USING SPRAY PYROLYSIS DEPOSITION METHOD FABRICATION OF COBALT DOPED TIN OXIDE THIN FILM FOR DYE-SENSITIZED SOLAR CELL USING SPRAY PYROLYSIS DEPOSITION METHOD Noor Kamalia Abd Hamed, Rizal Mahat, Noor Sakinah Khalid, Fatin Izyani Mohd Fazli,

More information

Supplementary Information

Supplementary Information Supplementary Information Formation of oxygen vacancies and Ti 3+ state in TiO 2 thin film and enhanced optical properties by air plasma treatment Bandna Bharti a, Santosh Kumar b, Heung-No Lee c and Rajesh

More information

Semiconductor Technology

Semiconductor Technology Semiconductor Technology from A to Z Oxidation www.halbleiter.org Contents Contents List of Figures List of Tables II III 1 Oxidation 1 1.1 Overview..................................... 1 1.1.1 Application...............................

More information

Microstructure-Properties: I Lecture 5B The Effect of Grain Size. on Varistors

Microstructure-Properties: I Lecture 5B The Effect of Grain Size. on Varistors 1 Microstructure-Properties: I Lecture 5B The Effect of on 27-301 October, 2007 A. D. Rollett 2 This lecture is concerned with the effects of grain size on properties. This is the second of two examples:

More information

High rate reactive magnetron sputtering of ZnO:Al films from rotating metallic targets

High rate reactive magnetron sputtering of ZnO:Al films from rotating metallic targets High rate reactive magnetron sputtering of ZnO:Al films from rotating metallic targets H. Zhu 1, 2, *, J. Hüpkes 1, E. Bunte 1 1 IEF5-Photovoltaik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany

More information

1 Thin-film applications to microelectronic technology

1 Thin-film applications to microelectronic technology 1 Thin-film applications to microelectronic technology 1.1 Introduction Layered thin-film structures are used in microelectronic, opto-electronic, flat panel display, and electronic packaging technologies.

More information

EE40 Lec 22. IC Fabrication Technology. Prof. Nathan Cheung 11/19/2009

EE40 Lec 22. IC Fabrication Technology. Prof. Nathan Cheung 11/19/2009 Suggested Reading EE40 Lec 22 IC Fabrication Technology Prof. Nathan Cheung 11/19/2009 300mm Fab Tour http://www-03.ibm.com/technology/manufacturing/technology_tour_300mm_foundry.html Overview of IC Technology

More information

Structural and Optical Properties of SnS Thin Films

Structural and Optical Properties of SnS Thin Films J. Nano. Adv. Mat., No., 43-49 (4) 43 Structural and Optical Properties of SnS Thin Films Bushra A. Hasan, * and Ikhlas H. Shallal Journal of Nanotechnology & Advanced Materials An International Journal

More information

Single Crystal Growth of Aluminum Nitride

Single Crystal Growth of Aluminum Nitride Single Crystal Growth of Aluminum Nitride Hiroyuki Kamata 1, Yuu Ishii 2, Toshiaki Mabuchi 3, Kunihiro Naoe 1, Shoji Ajimura 4, Kazuo Sanada 5 Single crystalline aluminum nitride (AlN) is a promising material

More information