The Role of Physical Defects in Electrical Degradation of GaN HEMTs
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1 The Role of Physical Defects in Electrical Degradation of GaN HEMTs Carl V. Thompson Dept. of Materials Science and Engineering, MIT Faculty Collaborators: Chee Lip Gan 2,3, Tomas Palacios 1, Jesus Del Alamo 1 Current Post doc and Students: Dr. Wardhana A. Sasangka 3, Govindo J. Syaranamual 2,3, Past Post Docs and Students: Jongwoo Joh 1, Feng Gao 1, Prashanth Makaram 1, Swee Ching Tan 1 1 MIT, 2 Nanyang Technical University, Singapore, 3 Singapore MIT Alliance for Research and Technology, Singapore, now NUS Current support: Singapore-MIT Alliance for Research and Technology, MIT GaN Initiative (past support: ONR DRIFT MURI)
2 Outline Electrical degradation of GaN HEMTs Role of mechanical strain Irreversible physical degradation - pits and cracks - electrical degradation and pit growth Effects of - electric field - water - dislocations
3 Typical GaN HEMT Structure
4 Why AlGaN/GaN HEMTs Due to high band gap ( eV), high breakdown voltage. Because of strong piezoelectric response and spontaneous polarization, high sheet carrier density in the 2D electron gas. Because of high carrier mobility, with high carrier density, high drain currents. Because of saturated high electron velocity, high frequency operation. Ideal for high power and high frequency applications
5 Electrical Degradation of GaN HEMTs V DG step stress, 1V every 1 min. Jesus A. del Alamo and Jungwoo Joh, Microelectronics Reliability 49 (2009)
6 Two Components of I D,sat Degradation Irreversible (physical damage) Reversible (trap states) Jungwoo Joh, Jesus A. del Alamo, et al, Microelectronics Reliability 51 (2011)
7 Physical Degradation: Pits and Cracks Cross-Sectional TEM Images Z contrast Uttiya Chowdhury, Jungwoo Joh, and Jesus A. del Alamo et al, EDL 29, 108 (2008)
8 The Role of Mechanical Stress in Electrical Degradation Sources of Strain: Residual stress (uniform) growth stresses (island coalescence, misfit strain) differential thermal expansion Inverse piezoelectric effect (localized in regions of high field)* *Jesus A. del Alamo and Jungwoo Joh, Microelectronics Reliability 49 (2009)
9 The Role of Mechanical Stress in Electrical Degradation Tensile strain applied through 4-point bending Jungwoo Joh, Ling Xia, and Jesus A. del Alamo, IEDM 2007
10 The Role of Mechanical Stress in Electrical Degradation Proposed effect of piezoelectric stress on reversible degradation: Stress-induced formation of defects with midgap states. Jungwoo Joh, Ling Xia, and Jesus A. del Alamo, IEDM 2007
11 Correlation of Electrical and Physical Degradation Device Structure: GaN cap layer and AlGaN/GaN grown on SiC using MOCVD (experimental devices, corporate collaborator). Step stress to determine V crit at which a sharp increase in the drain current occurs (off-state) V GS = 7 V, V DG stepped from 8 to 50 V at 1V intervals. Also fixed V DG for different times (V DS =0). Chemically remove SiN passivation and gate/contact metals. Inspect Using SEM and AFM. P. Makaram, J. Joh, J.A. del Alamo, T. Palacios, and C.V. Thompson, Appl. Phys. Lett. 96, (2010).
12 Correlation of Electrical and Physical Degradation Stressing with higher V DG leads first to grooves, then to pits. Higher the V DG, the bigger the pits. P. Makaram, J. Joh, J.A. del Alamo, T. Palacios, and C.V. Thompson, Appl. Phys. Lett. 96, (2010).
13 Correlation of Electrical and Physical Degradation P. Makaram, J. Joh, J.A. del Alamo, T. Palacios, and C.V. Thompson, Appl. Phys. Lett. 96, (2010).
14 Correlation of Electrical and Physical Degradation Correlation of Stress conditions and pit depths (cross-sectional TEM) Jungwoo Joh, Jesus A. del Alamo et al, Microelectronics Reliability 51 (2011)
15 Correlation of Electrical and Physical Degradation Both permanent and reversible stress degradation correlate with pit size Jungwoo Joh, Jesus A. del Alamo et al, Microelectronics Reliability 51 (2011)
16 Correlation of Electrical and Physical Degradation Pits cause localized electroluminescence M. Montes Bajo, C. Hodges, M. J. Uren, and M. Kuball, Appl. Phys. Lett. 101, (2012)
17 Mechanism of Pit Formation: Electric Field left: V SD = 30V and V GD = - 12V right: V SD = 30V and V GS = +12V Pits form only on high-field gate edge Feng Gao, B. Lu, L. Li, S. Kaun, J.S. Speck, C.V. Thompson, and T. Palacios, Appl. Phys. Letts. 99, (2011).
18 Mechanism of Pit Formation: Oxidation With and without Al 2 O 3 passivation: Particles were observed extending from the gate regions. There was a one-to-one correlation with pits. Particles contain O and Ga Feng Gao, B. Lu, L. Li, S. Kaun, J.S. Speck, C.V. Thompson, and T. Palacios, Appl. Phys. Letts. 99, (2011).
19 Mechanism of Pit Formation: Effects of Ambient Tested in Air Tested in Vacuum (3 x 10-5 torr) V DS =0V and V GS =40V, 6000s at RT Pit formation involves field-enhanced oxidation of Ga Feng Gao, B. Lu, L. Li, S. Kaun, J.S. Speck, C.V. Thompson, and T. Palacios, Appl. Phys. Letts. 99, (2011).
20 Mechanism of Pit Formation: Effects of Ambient Similar result for devices with thick SiN passivation Air Vacuum ( Torr) OFF-state bias (V gs = 7V and V ds = 43V) for 3000s at RT in darkness Feng Gao, S.C. Tan, J.A. del Alamo, C.V. Thompson, and T. Palacios, IEEE Trans. Electron Devices 61, 444 (2014).
21 Physical Degradation: Chemistry (EDX) Air Vacuum ( Torr) Larger pit, less Ga X-sectional TEM, EDX Chemical analysis along yellow scan line Left: ambient air; Right: Torr vacuum. F.engGao, S.C. Tan, J.A. del Alamo, C.V. Thompson, and T. Palacios, IEEE Trans. Electron Devices 61, 444 (2014).
22 Physical Degradation: Chemistry (EELS) Point # Al Ga N O 1 0 % 49.23% 50.77% 0% Gate 2 0 % % 45.44% 0% % 12.47% 0% 68.66% Pit area is - oxygen and aluminum rich and - gallium and nitrogen deficient W.A. Sasangka, G.J. Syaranamual, C.L. Gan, and C.V. Thompson, Proc. IRPS 2015
23 Mechanism of Pit Formation: Effects of Water Water-saturated Ar Dry Ar F. Gao, S.C. Tan, J.A. del Alamo, C.V. Thompson, and T. Palacios, IEEE Trans. Electron Devices 61, 444 (2014).
24 Physical Degradation: Role of Water Model: Field- and Water-Assisted Electrochemical Oxidation 2Al x Ga 1 x N + 3H 2 O = xal 2 O 3 + (1 x)ga 2 O 3 + N 2 +3H 2. Reduction half reaction: 2H 2 O + 2e = H 2 + 2OH Decomposition and oxidation: 2Al x Ga 1 x N + 6h + = 2xAl (1 x)ga 3+ + N 2 and 2xAl (1 x)ga OH = xal 2 O 3 + (1 x)ga 2 O 3 + 3H 2 O Feng Gao, S.C. Tan, J.A. del Alamo, C.V. Thompson, and T. Palacios, IEEE Trans. Electron Devices 61, 444 (2014).
25 Physical Degradation: Role of Water Reduction half reaction: 2H 2 O + 2e = H 2 + 2OH Diffusion of OH- through SiN WVTR = known water vapor transmission rate = g/m 2 day ~ ~ g/m2 day Decomposition and oxidation: 2Al x Ga 1 x N + 6h + = 2xAl (1 x)ga 3+ + N 2 Source of holes: Number of holes scales with pit volume - Interband tunneling - Probably assisted by mid-gap states - Wrong scaling with E max for impact ionization
26 Physical Degradation Summary of Findings on Physical Degradation: Electrical degradation correlates with tensile mechanical strain Physical degradation correlates with electrical degradation Physical degradation occurs in locations of high electric field H 2 O vapor accelerates physical degradation Particles of Ga and O form, N is absent, and Al and O is present in the pits. Neither SiN nor thin Al 2 O 3 passivation layers suppress physical degradation Proposed mechanism: water-mediated field-enhanced electrochemical oxidation involving OH - transport through SiN.
27 Dislocations and Pit Formation We are carrying out kinetic studies of pit formation and growth for different fixed temperatures. Devices are being stressed under off-state bias at a gate voltage (V G ) = - 10 V and drain voltage (V D ) is set at different fixed values (e.g.10 V, 20 V and 40 V) and the gate voltage (V G ) is fixed (e.g. -10 V). D Devices are stressed at a fixed temperature (250 o C) stressed, typically in air. Typical electrical stress result W.A. Sasangka, G.J. Syaranamual, C.L. Gan, and C.V. Thompson, Proc. IRPS 2015
28 Pit Area and Electrical Degradation Correlate as in other studies W.A. Sasangka, G.J. Syaranamual, C.L. Gan, and C.V. Thompson, Prc. IRPS 2015
29 Pits and Dislocations Pits have dislocations associated with them It is likely that the dislocation pre-existed before stressing (dislocation density ~10 9 /cm 2 ) Pits form at dislocations rather than at the location of highest electric field
30 Field Effects Triangle-Gate Structure for Reliability Studies A custom designed triangle-gate structure was used to isolate the effects of high electric field on the degradation mechanism Additionally, this structure helps to pin-point the location for TEM sample preparation
31 Electrical Field and Pit Location Pits do not form preferentially at the point of highest electric field, further suggesting a role for defects. W.A. Sasangka, G.J. Syaranamual, C.L. Gan, and C.V. Thompson, Proc. IRPS 2015
32 Pits and Dislocations TEM Cut Along Gate Edge, Early Pit Formation White Lines: Gate edges Yellow Lines: FIB slice for Cross-Sectional TEM
33 Pits and Dislocations Pits vs. dislocation type Dislocation density : Screw + mixed = 2 x 10-9 /cm 2 Edge = 4 x 10-9 /cm 2 # of pits with dislocation Screw = 8 out of 15 Edge = 4 out of 15 Mixed = 3 out of 15 Preferential pit formation at screw or mixed dislocations All pits have TDs, but not all Ds have pits
34 Impact of Dislocations on Electrical Degradation Larger TDD then greater I Dmax degradation Larger TDD then greater gate-lag Larger TDD increased traps Small effect of TDD on I Goff M. Tapajna, S.W. Kaun, M. H. Wong, F. Gao, T. Palacios, U. K. Mishra, J. S. Speck, and M. Kuball, Appl. Phys. Letts., 99, (2011).
35 Energetics of Pit Formation Pit formation is driven by G chem = a volumetric electrochemical energy < 0 And opposed by G s = an energy associated with the change in surface energy s associated with the increased surface area V = volume of pit (e.g. volume of a spherical cap) A = change in surface area (e.g. cap - circle) G tot = total energy for pit formation G tot = V G chem + A s
36 Energetics of Pit Formation Dislocations have local strain fields that lead to volumetric strain energies per unit length G,dis C 1 C C 1 = constant = core energy C 2 = constant dependent on dislocation type and mechanical properties b = Burger s vector r = radial distance from the core of the dislocation 2 b 2 ln r b When a pit forms at a dislocation, the strain energy associated with the dislocation is eliminated in the pit volume: G,dis which is a function of the volume and shape of the pit
37 Energetics of Pit Formation The strain energy around the core of the dislocation helps drive pit formation G tot = V G chem + A s G,dis Making nucleation at dislocations easier Screw dislocations have higher associated strain energies and therefore more effectively catalyze nucleation Formation of pits elongated along the core of the dislocations is favored
38 The Role of Physical Defects in Electrical Degradation of GaN HEMTs Summary: Physical and electrical degradation are correlated Physical degradation is affected by electric field and water: field assisted electrochemical oxidation Dislocations appear to catalyze physical degradation, and can thereby reduce reliability
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