Ultra-Wide Bandgap AlGaN Channel MISFET with Graded Heterostructure Ohmic Contacts
|
|
- Lambert Foster
- 6 years ago
- Views:
Transcription
1 Ultra-Wide Bandgap AlGaN Channel MIFET with Graded Heterostructure Ohmic Contacts anyam Bajaj 1, F. Akyol 1,. Krishnamoorthy 1, Y. Zhang 1,. Rajan 1 1 epartment of Electrical and Computer Engineering The Ohio tate University, Columbus, OH UA A. Armstrong 2, A. Allerman 2 2 andia National Laboratories, Albuquerque, NM UA Acknowledgment: ONR (r. Paul Maki), NF (ECC ), Raytheon I Microelectronics 1
2 Outline Motivation Heterostructure graded ohmic contacts Experimental results MIFET device operation 2
3 Outline Motivation Heterostructure graded ohmic contacts Experimental results MIFET device operation 3
4 Ultra-wide bandgap material systems Breakdown Field (MV/cm) GaN Fitting: V br ~ 0.15*(E g ) 2.5 MV/cm β-ga 2 O 3 AlN iamond 2 4H-iC Energy Bandgap (ev) GaN wide bandgap (3.4 ev) Ultrawide bandgap (UWBG) material systems with bandgap exceeding 4 ev AlN with extremely high (theoretical) breakdown field ~ 5X of GaN Results in high composition AlGaN with superior device figures of merits next-generation rf amplifiers? Power switches? Hudgins et al. IEEE TE 18.3 (2003) 4
5 witching figure of merit n s =10 13 cm -2 n s =10 13 cm -2 Al mole fraction in AlGaN 2EG mobility: Limited by Alloy cattering + Optical Phonon cattering Bajaj et al., APL (2014) 5
6 witching figure of merit n s =10 13 cm -2 n s =10 13 cm -2 Al mole fraction in AlGaN 2EG mobility: Limited by Alloy cattering + Optical Phonon cattering n s =10 13 cm -2 Baliga figure of merit (εμe C3 ): uperior for larger Al compositions in channel than GaN Al mole fraction in AlGaN Bajaj et al., APL (2014) 6
7 AlGaN for rf electronics Breakdown Field (MV/cm) AlN β-ga 2 O 3 iamond 6 4 GaN 2 4H-iC Energy Bandgap (ev) Johnson's FOM (x10 7 MV/s) AlGaN channels with predicted electron velocities comparable to GaN superior Johnson s figure of merit (theoretical) Farahmand et al. IEEE TE 48.3 (2001) Anwar et al. IEEE TE 48.3 (2001) 7
8 AlGaN for rf electronics / optoelectronics Breakdown Field (MV/cm) AlN β-ga 2 O 3 iamond 6 4 GaN 2 4H-iC Energy Bandgap (ev) Johnson's FOM (x10 7 MV/s) Fig. by Crystal I ( AlGaN channels with predicted electron velocities comparable to GaN superior Johnson s figure of merit (theoretical) Also enables deep-uv emitters and detectors Farahmand et al. IEEE TE 48.3 (2001) Anwar et al. IEEE TE 48.3 (2001) 8
9 Key Challenges Material Challenges: efects, Mobility evice Challenges: High contact resistances to AlGaN Channels Li et al., IEEE EL 20.7 (1999) Yue et al., IEEE EL 33.7 (2012) ρ C (Ω.cm 2 ) E-3 1E-4 1E-5 1E-6 Nanjo et al. APL (2008) Yafune et al. JJAP (2011) Yafune et al. JJAP (2011) GaN HEMTs [ref] Wang et al. El. Mat. (2004) France et al. APL (2007) Yafune et al. El.Lett. (2014) Yun et al. EL (2006) Baca et al. APL (2016) rivastava et al. El. Mat. (2009) 1E Al composition in AlGaN channel 9
10 Outline Motivation Heterostructure graded ohmic contacts Experimental results MIFET device operation 10
11 Ohmic Contact Formation Requirements: 1. High channel electron affinity / matching metal work function 2. High doping density Φ M χ E VAC Result in small tunneling barrier and width for electrons high tunneling probability e - Φ B W E C E F 4 2m* φ B 3e T = e 1/ 2 W Metal emiconductor N + Charge Q M 11
12 Ohmic Contact Formation Requirements: 1. High channel electron affinity / matching metal work function 2. High doping density Φ M χ E VAC Result in small tunneling barrier and width for electrons high tunneling probability e - Φ B W E C E F Conventional n-gan channel: Relatively high electron affinity (4.1 ev) Metals with similar work function result in small tunneling barrier R C below 10-6 Ω.cm 2 Metal emiconductor 12
13 Ohmic Contact Formation Requirements: 1. High channel electron affinity / matching metal work function 2. High doping density Φ M χ E VAC Result in small tunneling barrier and width for electrons high tunneling probability e - Φ B W E C E F Conventional n-gan channel: Relatively high electron affinity (4.1 ev) Metals with similar work function result in small tunneling barrier R C below 10-6 Ω.cm 2 Metal 2EG emiconductor AlGaN barrier GaN channel GaN HEMTs alloyed / regrown contacts give low R C to 2EG Li et al., IEEE EL 20.7 (1999) Yue et al., IEEE EL 33.7 (2012) 13
14 Ohmic Contacts to UWBG AlGaN Challenges: 1. Low electron affinity of AlN (0.6 ev) high chottky barrier 2. Low doping efficiency Φ M χ E VAC Result in low tunneling probability, high R C e - Φ B W E C E F Metal emiconductor 14
15 Heterostructure-engineered ohmic contacts A UWBG n-algan channel A E F AlGaN χ Φ B EVAC E C E V N + Q M Charge Conventional ohmic contact to n-type UWBG AlGaN channel large chottky barrier 15
16 Heterostructure-engineered ohmic contacts A A Reverse graded AlGaN -> GaN χ Φ B E VAC E C UWBG n-algan channel E F GaN AlGaN E V Q M N + P PZ +P P Charge Contact layer with reverse composition-grading from wider bandgap AlGaN to lower bandgap GaN lower chottky barrier 16
17 Heterostructure-engineered ohmic contacts A A Reverse graded AlGaN -> GaN χ Φ B E VAC E C UWBG n-algan channel E F Negative polarization charge (spontaneous + piezoelectric) raises E C (0001 direction) large barrier for electrons! Jena et al., APL (2002) Rajan et al., APL 84.9 (2004) Q M GaN P PZ +P P AlGaN E V N + Charge Contact layer with reverse composition-grading from wider bandgap AlGaN to lower bandgap GaN lower chottky barrier 17
18 Heterostructure-engineered ohmic contacts A A Reverse graded n ++ AlGaN -> GaN χ Φ B E VAC E C UWBG n-algan channel n ++ graded AlGaN E F E V High donor concentration compensates negative polarization charge flat E C profile, low R H Jena et al., APL (2002) Rajan et al., APL 84.9 (2004) Park et al., IEEE EL 36.3 (2015) Q M N + Electron slab P PZ +P P Charge Contact layer with reverse composition-grading from wider bandgap AlGaN to lower bandgap GaN lower chottky barrier 18
19 Outline Motivation Heterostructure graded ohmic contacts Experimental results MIFET device operation 19
20 Experiment n-type Al 0.75 Ga 0.25 N Channel A A A A 50nm Graded n ++ AlGaN i = cm nm Al 0.75 Ga 0.25 N i = 3x10 19 cm -3 30nm Al 0.75 Ga 0.25 N (UI) AlN on apphire 6% 75% Energy (ev) A GROWN: Contact region n-al 0.75 Ga 0.25 N Graded AlGaN UI AlGaN AlN istance (nm) E C E F E V nm 75% n-algan channel with E G = 5.35 ev (MBE growth on AlN/apphire template) - i donor concentration = 3x10 19 cm nm n ++ reverse polarization-graded contact layer - Conduction band profile under ohmic region (as-grown) 20
21 Experiment n-type Al 0.75 Ga 0.25 N Channel A A A 90nm Al 0.75 Ga 0.25 N i = 3x10 19 cm -3 30nm Al 0.75 Ga 0.25 N (UI) AlN on apphire A 6% 75% Energy (ev) RECEE: Intrinsic region n-al 0.75 Ga 0.25 N UI AlGaN istance (nm) AlN E C E F E V nm 75% n-algan channel with E G = 5.35 ev (MBE growth on AlN/apphire template) - i donor concentration = 3x10 19 cm nm n ++ reverse polarization-graded contact layer - Conduction band profile under gate region (recessed) 21
22 Non-Alloyed Ohmics Contacts Graded AlGaN contact layer AlGaN channel 30nm Al 0.75 Ga 0.25 N (UI) AlN on apphire Non-alloyed ohmic contacts Ti/Al/Ni/Au = 20/120/30/50 nm 22
23 Contact Resistance using TLM spacing R H AlGaN channel 30nm Al 0.75 Ga 0.25 N (UI) AlN on apphire Resistance (ohm) = 0.15 Ω.mm R H = 158 Ω/sq ρ P = 1.4x10-6 Ω.cm pacing (µm) As-grown structure: (Metalsemiconductor interface resistance) = 0.15 Ω.mm ρ P = 1.4x10-6 Ω.cm 2 Recessed structure: Net R C to 75% AlGaN channel = 0.32 Ω.mm ρ P = 1.9x10-6 Ω.cm 2 Non-alloyed ohmic contacts Ti/Al/Ni/Au = 20/120/30/50 nm 23
24 Contact Resistance using TLM spacing R H AlGaN channel 30nm Al 0.75 Ga 0.25 N (UI) AlN on apphire Resistance (ohm) = 0.15 Ω.mm R H = 158 Ω/sq ρ P = 1.4x10-6 Ω.cm pacing (µm) As-grown structure: (Metalsemiconductor interface resistance) = 0.15 Ω.mm ρ P = 1.4x10-6 Ω.cm 2 spacing 90nm channel R H1 RH2 R H1 30nm Al 0.75 Ga 0.25 N (UI) AlN on apphire Resistance (ohm) R H1 = 0.32 Ω.mm R H2 = 725 Ω/sq ρ P = 1.9x10-6 Ω.cm pacing (µm) Recessed structure: Net R C to 75% AlGaN channel = 0.32 Ω.mm ρ P = 1.9x10-6 Ω.cm 2 Cl 2 -based ICP-RIE etch to test contact to AlGaN channel 24
25 Contact Resistance using TLM spacing R H AlGaN channel 30nm Al 0.75 Ga 0.25 N (UI) AlN on apphire spacing 90nm channel R H1 RH2 R H1 30nm Al 0.75 Ga 0.25 N (UI) AlN on apphire Resistance (ohm) Resistance (ohm) = 0.15 Ω.mm R H = 158 Ω/sq ρ P = 1.4x10-6 Ω.cm pacing (µm) +R H1 = 0.32 Ω.mm R H2 = 725 Ω/sq ρ P = 1.9x10-6 Ω.cm pacing (µm) ρ C (Ω.cm 2 ) E-3 1E-4 1E-5 Nanjo et al. APL (2008) Yafune et al. JJAP (2011) Yafune et al. JJAP (2011) Wang et al. El. Mat. (2004) France et al. APL (2007) Baca et al. APL (2016) Yafune et al. El.Lett. (2014) Yun et al. EL (2006) 1E-6 GaN HEMTs [ref] This work 1E ρ P = 1.9x10-6 Ω.cm 2 rivastava et al. El. Mat. (2009) Al composition in AlGaN channel Low ρ P to UWBG AlGaN ~ 5.3 ev (Non-alloyed) 25
26 Outline Motivation Heterostructure graded ohmic contacts Experimental results MIFET device operation 26
27 Al 0.75 Ga 0.25 N Channel MI-FET G 20nm Al 2 O 3 12nm n-algan channel C G (µf/cm 2 ) khz V G (V) n (x10 12 cm -2 ) 37nm Al 0.75 Ga 0.25 N (UI) AlN substrate - Recessed structure with 12 nm n-al 0.75 Ga 0.25 N channel G - 20 nm AL Al 2 O 3 followed by 700 C PA (30s) - C-V profile resulted in pinch-off voltage = - 6 V ; accumulation region with MEFET-like behavior ; charge = 1.5x10 13 cm -2 27
28 Al 0.75 Ga 0.25 N Channel MI-FET G 20nm Al 2 O 3 12nm n-algan channel I (ma/mm) V G = 2 V V G = -2 V V (V) I (ma/mm) V = 20 V V G (V) g m (m/mm) 37nm Al 0.75 Ga 0.25 N (UI) AlN substrate - Recessed structure with 12 nm n-al 0.75 Ga 0.25 N channel - 20 nm AL Al 2 O 3 followed by 700 C PA (30s) - C-V profile resulted in pinch-off voltage = - 6 V ; accumulation region with MEFET-like behavior ; charge = 1.5x10 13 cm -2 rf gain (db) f T = 0.6 GHz Frequency (Hz) h21 U MG V G = 4 V V = 25 V - I _MAX ~ 60 ma/mm ; g m_max = 14 m/mm - f T_PEAK of 0.6 GHz ; f MAX_PEAK of 1.4 GHz - Limited by low channel mobility of 16 cm 2 /Vs - efect related compensation 28
29 Al 0.75 Ga 0.25 N Channel MI-FET G 37nm Al 0.75 Ga 0.25 N (UI) AlN substrate 20nm Al 2 O 3 12nm n-algan channel - Recessed structure with 12 nm n-al 0.75 Ga 0.25 N channel - 20 nm AL Al 2 O 3 followed by 700 C PA (30s) - C-V profile resulted in pinch-off voltage = - 6 V ; accumulation region with MEFET-like behavior ; charge = 1.5x10 13 cm -2 I,I,I G (µa/mm) 140 V G = -9 V L G = 1.1 µm V br = 224 V G = -9 V for L G = 1.1 μm in Fluorinert - no field plates - Average field > 2 MV/cm higher than GaN FETs I G V (V) (compliance) I I 29
30 UMMARY - Heterostructure graded ohmic contacts to UWBG AlGaN compositional grading + high doping - Achieved low specific contact resistance to Al 0.75 Ga 0.25 N channels (NON-ALLOYE) - emonstrated the 1 st UWBG Al 0.75 Ga 0.25 N channel MIFET with low-resistance ohmics (MBE) ρ C (Ω.cm 2 ) E-3 1E-4 1E-5 Nanjo et al. APL (2008) Yafune et al. JJAP (2011) Yafune et al. JJAP (2011) France et al. APL (2007) Baca et al. APL (2016) Yafune et al. El.Lett. (2014) Yun et al. EL (2006) Wang et al. rivastava et al. El. Mat. (2004) El. Mat. (2009) 1E-6 GaN HEMTs [ref] This work 1E Al composition in AlGaN channel - This work removes one of the principle challenges for UWBG AlGaN devices; applications in large range of electronic and photonic devices spacing 90nm channel R H1 RH2 R H1 30nm Al 0.75 Ga 0.25 N (UI) AlN on apphire Resistance (ohm) R H1 = 0.32 Ω.mm R H2 = 725 Ω/sq ρ P = 1.9x10-6 Ω.cm pacing (µm) I (ma/mm) V G = 2 V V G = -2 V V (V) 30
Substrate Effects on Transport and Dispersion in Delta- Doped β-ga 2 O 3 Field Effect Transistors
1 EMC 2018 joishi.1@osu.edu rajan.21@osu.edu Substrate Effects on Transport and Dispersion in Delta- Doped β-ga 2 O 3 Field Effect Transistors Chandan Joishi, Zhanbo Xia, Joe McGlone, Yuewei Zhang, Aaron
More informationGallium Nitride Based HEMT Devices
Gallium Nitride Based HEMT Devices Keyan Zang SMA5111/6.772 Compound Semiconductor Materials and Devices May 14 th, 2003 Courtesy of Keyan Zang. Used with permission. Outline Introduction Device Structure
More informationOhmic contacts formation on AlGaN/GaN HEMTs by introducing uneven AlGaN layer structures
Ohmic contacts formation on Al/ HEMTs by introducing uneven Al layer structures K. Tsutsui, M. Kamiya, Y. Takei,K. Kakushima, H. Wakabayashi, Y. Kataoka, and H. Iwai Tokyo Intitute of Technology 1 Contact
More information4-NM AlN BARRIER ALL BINARY HFET WITH SiN x GATE DIELECTRIC
International Journal of High Speed Electronics and Systems Vol. 19, No. 1 (29) 153 159 World Scientific Publishing Company 4-NM AlN BARRIER ALL BINARY HFET WITH SiN x GATE DIELECTRIC TOM ZIMMERMANN, YU
More informationUltrascaled GaN HEMTs with thin AlN barriers
Ultrascaled GaN HEMTs with thin AlN barriers Huili (Grace) Xing Electrical Engineering Department, University of Notre Dame Ft transport physics in GaN 1 Outline AlN/GaN HEMTs Highest mobility with highest
More informationN-face high electron mobility transistors with a GaN-spacer
phys. stat. sol. (a) 204, No. 6, 2049 2053 (2007) / DOI 10.1002/pssa.200674879 N-face high electron mobility transistors with a GaN-spacer M. H. Wong *, 1, S. Rajan 1, R. M. Chu 1, T. Palacios **, 1, C.
More informationEnhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier
Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier Ma Xiao-Hua( ) a)b), Yu Hui-You( ) a), Quan Si( ) b), Yang Li-Yuan( ) b), Pan Cai-Yuan( ) a), Yang Ling( ) b), Wang Hao(
More informationSupporting Online Material for
www.sciencemag.org/cgi/content/full/327/5961/60/dc1 Supporting Online Material for Polarization-Induced Hole Doping in Wide Band-Gap Uniaxial Semiconductor Heterostructures John Simon, Vladimir Protasenko,
More informationFabrication of high power GaN transistors F. Medjdoub CNRS - IEMN
Fabrication of high power GaN transistors F. Medjdoub CNRS - IEMN E. Dogmus, A. Linge, T. Defais, R. Kabouche, R. Pecheux, M. Zegaoui Lille city centre Where are we? National Network of Large Technological
More informationTi silicide electrodes low contact resistance for undoped AlGaN/GaN structure
222nd ECS meeting 11 Oct. 2012 Ti silicide electrodes low contact resistance for undoped AlGaN/GaN structure K. Tsuneishi, J. Chen, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui,
More informationQuarterly Report EPRI Agreement W
Quarterly Report EPRI Agreement W08069-07 PI: S.J. Pearton, University of Florida (Co-investigators F. Ren, C.R. Abernathy, R.K. Singh, P.H. Holloway, T.J. Anderson, M. Berding, A. Sher, S. Krishnimurthy,
More informationModeling and Electrical Characterization of Ohmic Contacts on n-type GaN
Modeling and Electrical Characterization of Ohmic Contacts on n-type GaN Sai Rama Usha Ayyagari Thesis submitted to the faculty of the Virginia Polytechnic Institute and State University in partial fulfillment
More informationFABRICATION OF GaAs DEVICES
FABRICATION OF GaAs DEVICES by Albert G. Baca and Carol I. H. Ashby Sandia National Laboratories Albuquerque, NM, USA CONTENTS Acknowledgment Abbreviations xiii 1 Introduction to GaAs devices 1 1.1 Scope
More informationUltra Low Resistance Ohmic Contacts to InGaAs/InP
Ultra Low Resistance Ohmic Contacts to InGaAs/InP Uttam Singisetti*, A.M. Crook, E. Lind, J.D. Zimmerman, M. A. Wistey, M.J.W. Rodwell, and A.C. Gossard ECE and Materials Departments University of California,
More informationDisruptive technological routes to monitor temperature and improve thermal management in GaN HEMTs
1 Disruptive technological routes to monitor temperature and improve thermal management in GaN HEMTs M. LESECQ (1), F. COZETTE (1), M. ABOU DAHER (1), M-R. IREKTI (1), M. BOUCHERTA (1), N. DEFRANCE (1),
More informationAlGaN/GaN based HEMT Device for High Power Applications
AlGaN/GaN based HEMT Device for High Power Applications 1 Kajal Jain, 2 Shivani Saxena 1 M.tech VLSI, Banasthali Vidyapith 2 Assistant Professor, Department of Electronics, Banasthali Vidyapith, Banasthali,
More informationAssignment Questions
HIGH SPEED DEVICES AND CIRCUITS Assignment Questions 1) Why Silicon Semiconductors are widely used in the VLSI applications? Hint: Refer Video on Introduction to Basic Concepts 2) What are the parameters
More informationLEEN Characterization of Ohmic Contacts and Device Processing on AlGaN/GaN for HEMT Applications. Student Researcher: Gregg H.
LEEN Characterization of Ohmic Contacts and Device Processing on AlGaN/GaN for HEMT Applications Student Researcher: Gregg H. Jessen Advisor: Dr. Leonard J. Brillson The Ohio State University Department
More informationElectrochemical Oxidation, Threading Dislocations and the Reliability of GaN HEMTs
Electrochemical Oxidation, Threading Dislocations and the Reliability of GaN HEMTs Carl V. Thompson 1,3 Dept. of Materials Science and Engineering, M.I.T. Primary collaborators: Wardhana A. Sasangka 1,
More informationECCI of AlGaN/GaN HEMT structures grown on Si
ECCI of AlGaN/GaN HEMT structures grown on Si D. Thomson 1, G. Naresh-Kumar 1, B. Hourahine 1, C. Trager-Cowan 1, P. Wright 2 and T. Martin 2 1 Dept. Of Physics, SUPA, University of Strathclyde, Glasgow
More informationChapter 6. AlGaAs/GaAs/GaAs Wafer-fused HBTs
Chapter 6. AlGaAs/GaAs/GaAs Wafer-fused HBTs 6.1. Overview Previous chapters described an AlGaAs-GaAs-GaN HBT, in which an epitaxially grown AlGaAs-GaAs emitter-base was wafer-fused to a GaN collector.
More informationImprove the performance of MOCVD grown GaN-on-Si HEMT structure
Improve the performance of MOCVD grown GaN-on-Si HEMT structure Dr. Xiaoqing Xu Stanford Nanofabrication Facility Abstract The SNF installed a new metalorganic chemical vapor deposition (MOCVD) system
More informationOptoelectronic characterization of Au/Ni/n-AlGaN photodiodes after annealing at different temperatures
Optoelectronic characterization of Au/Ni/n-AlGaN photodiodes after annealing at different temperatures PNM Ngoepe *, WE Meyer, M Diale, FD Auret, L van Schalkwyk Department of Physics, University of Pretoria,
More informationSIMS Quantification of Matrix and Impurity Species in Al x Ga 1-x N
SIMS Quantification of Matri and Impurity Species in Al Ga 1- N Abstract C. J. Gu a, F. A. Stevie a*, C. J. Hitzman b, Y. N. Saripalli c, M. Johnson c, D. P. Griffis a a Analytical Instrumentation Facility,
More informationTaking, Sanna (2012) AlN/GaN MOS-HEMTs Technology. PhD thesis. Copyright and moral rights for this thesis are retained by the author
Taking, Sanna (2012) AlN/GaN MOS-HEMTs Technology. PhD thesis. http://theses.gla.ac.uk/3356/ Copyright and moral rights for this thesis are retained by the author A copy can be downloaded for personal
More informationSilicon-on-insulator (SOI) was developed in the
66 Silicon-on-insulator substrates for compound semiconductor applications Mike Cooke reports on research developments reaching towards high-power electronics and infrared optical communications. Silicon-on-insulator
More informationMaterials Characterization
Materials Characterization C. R. Abernathy, B. Gila, K. Jones Cathodoluminescence (CL) system FEI Nova NanoSEM (FEG source) with: EDAX Apollo silicon drift detector (TE cooled) Gatan MonoCL3+ FEI SEM arrived
More informationDeveloping market for normally-off nitride power electronics
82 Technology focus: Nitride transistors Developing market for normally-off nitride power electronics With Japanese companies sampling normally-off gallium nitride transistors, Mike Cooke looks at some
More informationOPTICAL MODE PATTERN STUDY OF GAN BASED LEDS WITH AND WITHOUT NANOSCALE TOP GRATING
OPTICAL MODE PATTERN STUDY OF GAN BASED LEDS WITH AND WITHOUT NANOSCALE TOP GRATING by Greg Chavoor Senior Project ELECTRICAL ENGINEERING DEPARTMENT California Polytechnic State University San Luis Obispo
More informationGe Incorporation in SiC and the Effects on Device Performance
Ge Incorporation in SiC and the Effects on Device Performance K. J. Roe, M. W. Dashiell, G. Xuan*, E. Ansorge, G. Katulka, N. Sustersic, X. Zhang and J. Kolodzey Department of Electrical and Computer Engineering
More informationAntimony-based Quaternary Alloys for High-Speed Low-Power Electronic Devices
Antimony-based Quaternary Alloys for High-Speed Low-Power Electronic Devices R. Magno * 1, B. R. Bennett 1, K. Ikossi 1, M. G. Ancona 1, E. R. Glaser 1, N. Papanicolaou 1, J. B. Boos 1, B. V. Shanabrook
More informationEFFECT OF Li ION IRRADIATION (OF 20 MeV) ON RELIABILITY OF AlGaN/GaN HIGH ELECTRON MOBILITY TRANSISTORS
Journal of Electron Devices, Vol. 20, 2014, pp. 1740-1745 JED [ISSN: 1682-3427 ] EFFECT OF Li ION IRRADIATION (OF 20 MeV) ON RELIABILITY OF AlGaN/GaN HIGH ELECTRON MOBILITY TRANSISTORS Rupesh K.Chaubey
More informationAIST, 2 CREST/AIST, 3 Univ. Of Tsukuba
A. Traoré 1, A. Nakajima 1, T. Makino 1,2, D. Kuwabara 1,2,3, H. Kato 1,2, M. Ogura 1,2, D. Takeuchi 1,2, and S. Yamasaki 1,2,3 1 AIST, 2 CREST/AIST, 3 Univ. Of Tsukuba aboulaye.traore@aist.go.jp Diamond
More informationHigh Transmittance Ti doped ITO Transparent Conducting Layer Applying to UV-LED. Y. H. Lin and C. Y. Liu
High Transmittance Ti doped ITO Transparent Conducting Layer Applying to UV-LED Y. H. Lin and C. Y. Liu Department of Chemical Engineering and Materials Engineering, National Central University, Jhongli,
More informationInterface Properties of La-silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT
ECS-PRiME 2012, Hawaii Interface Properties of MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT K. Tuokedaerhan a, R. Tan c, K. Kakushima b, P. Ahmet a,y. Kataoka b, A. Nishiyama b, N.
More informationWafer bowing control by polarity management of MOCVD AlN growth
Wafer bowing control by polarity management of MOCVD AlN growth Ritsumeikan University Misaichi Takeuchi Collaboration with Prof. Aoyagi, Ritsumeikan University LayTec seminar, Oct. 18 2009, Jeju, Korea
More informationSynthesis and application of titanium nitride for gallium nitride electron devices
Synthesis and application of titanium nitride for gallium nitride electron devices Liuan Li A thesis submitted for the degree of doctor of philosophy Department of electrical and electronic engineering
More informationVeeco. Propelling GaN power electronics. Building better switches with GaN. Exposing SiC with Raman microscopy. Reducing droop with V-shaped pits
Volume 21 Issue VII October 2015 @compoundsemi www.compoundsemiconductor.net Building better switches with GaN Exposing SiC with Raman microscopy Veeco Reducing droop with V-shaped pits Propelling GaN
More informationMaking III-V contact with silicon substrates
106Technology focus: III-Vs on silicon Making III-V contact with silicon substrates High-speed logic, high-frequency/high-power transistors and photonics systems could benefit from marrying with silicon
More informationEx-situ Ohmic Contacts to n-ingaas
High Doping Effects on In-situ and Ex-situ Ohmic Contacts to n-ingaas Ashish Baraskar*, Mark A. Wistey, Vibhor Jain, Uttam Singisetti, Greg Burek, Brian J. Thibeault, Arthur C. Gossard and Mark J. W. Rodwell
More informationANNEALING. wwwworldscientific.com. TRAP BEHAVIOR IN AlGaN/GaN HEMTs BY POST-GATE-
International Journal of High Speed Electronics and Systems Vol. 14, No. 3 (2004) 769774 ( World Scientific Publishing Company World Scientific wwwworldscientific.com TRAP BEHAVIOR IN AlGaN/GaN HEMTs BY
More informationSiGeC Cantilever Micro Cooler
Mat. Res. Soc. Symp. Proc. Vol. 793 2004 Materials Research Society S11.3.1 SiGeC Cantilever Micro Cooler Gehong Zeng, Ali Shakouri 1 *, Edward Croke 2, Yan Zhang 1, James Christofferson 1 and John E.
More information(12) Patent Application Publication (10) Pub. No.: US 2009/ A1
(19) United States US 20090072240A1 (12) Patent Application Publication (10) Pub. No.: US 2009/0072240 A1 Suh et al. (43) Pub. Date: Mar. 19, 2009 (54) III-NITRIDE DEVICES WITH RECESSED Publication Classification
More informationCrystalline Silicon Solar Cells With Two Different Metals. Toshiyuki Sameshima*, Kazuya Kogure, and Masahiko Hasumi
Crystalline Silicon Solar Cells With Two Different Metals Toshiyuki Sameshima*, Kazuya Kogure, and Masahiko Hasumi Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588,
More informationMicroelectronics Devices
Microelectronics Devices Yao-Joe Yang 1 Outline Basic semiconductor physics Semiconductor devices Resistors Capacitors P-N diodes BJT/MOSFET 2 Type of Solid Materials Solid materials may be classified
More informationTaiyo Nippon Sanso. Advancing UV LEDs and power devices. The precarious promise of 5G. Evaluating the III-V MOSFET. Smart options for the infrared LED
Volume 22 Issue 3 April / May 2016 @compoundsemi www.compoundsemiconductor.net The precarious promise of 5G Evaluating the III-V MOSFET Smart options for the infrared LED Taiyo Nippon Sanso Advancing UV
More informationFascinated Journeys into Blue Light
Fascinated Journeys into Blue Light CONTENTS 1. Introduction 2. Creation of GaN single crystal with excellent quality 3. Development of GaN pn junction Blue LEDs and Laser diodes 4. Summary Isamu AKASAKI
More information60th Electronic Materials Conference
60th Electronic Materials Conference SESSION P: III-Nitrides HEMTs Session Chairs: Travis Anderson and Karl Hobart Thursday Morning, June 28, 2018 Location: Music Building, Lotte Lehmann 8:20 AM P01 (Student)
More informationGrown on InP substrates (Invited Paper)
Invited Paper AlGaSLilGaSbMetal-Semiconducthr-Metal Detectors Grown on InP substrates (Invited Paper) Y. Wang, M. C. Teich, and W. I. Wang Department of Electrical Engineering, Columbia Uthversity New
More informationNanofabrication Prof. Stephen Y. Chou NanoStructure Laboratory
Nanofabrication Prof. Stephen Y. Chou Department of Electrical Engineering Princeton University 1 Acknowledgment Dr. Paul Fischer Dr. Yun Wang Dr. Jay Guo Dr. Peter Klauss Dr. Jim Wang Dr. Longtin He Dr.
More informationCharacterization of thin Gd 2 O 3 magnetron sputtered layers
Characterization of thin Gd 2 O 3 magnetron sputtered layers Jacek Gryglewicz * a, Piotr Firek b, Jakub Jaśiński b, Robert Mroczyński b, Jan Szmidt b a Wroclaw University of Technology, Janiszewskiego
More informationA Review of Gallium Nitride (GaN) based devices for High Power and High Frequency Applications
J. App. Em. Sc Vol 4, Issue 2, December 2013 A Review of Gallium Nitride (GaN) based devices for High Power and High Frequency Applications Syed Mudassir and Jan Muhammad Faculty of Information and Communication
More informationTemperature-stable lithium niobate electro-optic Q-switch for improved cold performance. Dieter Jundt Gooch & Housego, Palo Alto, CA, USA
Temperature-stable lithium niobate electro-optic Q-switch for improved cold performance Dieter Jundt Gooch & Housego, Palo Alto, CA, USA PAGE 1 9251-20 Temperature-stable LN Q-switch September 25, 2014
More informationMolecular Beam Epitaxial Growth of AlN/GaN Multiple Quantum Wells
Mat. Res. Soc. Symp. Proc. Vol. 743 2003 Materials Research Society L6.2.1 Molecular Beam Epitaxial Growth of AlN/GaN Multiple Quantum Wells Hong Wu, William J. Schaff, and Goutam Koley School of Electrical
More informationExamples of dry etching and plasma deposition at Glasgow University
Examples of dry etching and plasma deposition at Glasgow University Glasgow has pioneered and established many novel research activities involving the development of new dry etch processes and dry etch
More informationADVANCED PROCESSING OF GaN FOR NOVEL ELECTRONIC DEVICES
ADVANCED PROCESSING OF GaN FOR NOVEL ELECTRONIC DEVICES By XIAN-AN CAO A DISSERTATION PRESENTED TO THE GRADUATE SCHOOL OF THE UNIVERSITY OF FLORIDA IN PARTIAL FULFILLMENT OF THE REQUIREMENTS FOR THE DEGREE
More informationInfluence of AlN spacer on the properties of AlGaN/AlN/GaN heterostructures
Optica Applicata, Vol. XLIII, No. 1, 2013 DOI: 10.5277/oa130108 Influence of AlN spacer on the properties of AlGaN/AlN/GaN heterostructures MATEUSZ WOŚKO *, BOGDAN PASZKIEWICZ, REGINA PASZKIEWICZ, MAREK
More informationChongbiao Luan Zhaojun Lin Yuanjie Lv Zhihong Feng Jingtao Zhao Qihao Yang Ming Yang
Appl. Phys. A DOI 10.1007/s00339-014-8403-6 Enhanced effect of side-ohmic contact processing on the 2DEG electron density and electron mobility of In 0.17 Al 0.83 N/AlN/GaN heterostructure field-effect
More informationIvan Bazarov Physics Department, Cornell University. Fundamental processes in III-V photocathodes; application for high-brightness photoinjectors
Ivan Bazarov Physics Department, Cornell University Fundamental processes in III-V photocathodes; application for high-brightness photoinjectors 07/21/09 I.V. Bazarov, III-V Photocathodes, ERL09 2 Contents
More informationSurface chemical and electronic properties of plasma-treated n-type Al 0.5 Ga 0.5 N
phys. stat. sol. (a) 204, No. 10, 3410 3416 (2007) / DOI 102/pssa.200723119 Surface chemical and electronic properties of plasma-treated n-type Al 0.5 N X. A. Cao *, 1, H. Piao 2, J. Li 3, J. Y. Lin 3,
More informationLiang Pang, Kyekyoon Kim Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, IL 61801, US
IOSR Journal of Engineering (IOSRJEN) ISSN (e): 2250-3021, ISSN (p): 2278-8719 Vol. 04, Issue 02 (February. 2014), V4 PP 08-13 www.iosrjen.org Analysis of AlGaN/GaN high electron mobility transistors with
More information(12) United States Patent (10) Patent No.: US 7,915,643 B2. Suh et al. (45) Date of Patent: Mar. 29, 2011
US007.915643B2 (12) United States Patent (10) Patent No.: Suh et al. (45) Date of Patent: Mar. 29, 2011 (54) ENHANCEMENT MODE GALLIUM NITRIDE 3:39: A. 299; Eyoto CaC POWER DEVICES 2010/0264461 A1* 10/2010
More informationSiC high voltage device development
SiC high voltage device development 2006. 11. 30 KERI Power Semiconductor Group outline 1. Device design & simulation for power devices 2. SiC power diode process development Ion implantation & activation
More informationN-polar AlN buffer growth by MOVPE for transistor applications
N-polar AlN buffer growth by MOVPE for transistor applications Jori Lemettinen 1 *, Hironori Okumura 2,3, Tomás Palacios 3, and Sami Suihkonen 1 1 Department of Electronics and Nanoengineering, Aalto University,
More informationWidening the prospects for gallium oxide power electronics
64 Technology focus: Wide-bandgap semiconductors Widening the prospects for gallium oxide power electronics Mike Cooke reports on research on gallium oxide as a wider-bandgap semiconductor than gallium
More informationElectron Mobility in Polarization-doped Al0-0.2GaN with a Low Concentration Near cm -3
Electron Mobility in Polarization-doped Al0-0.2GaN with a Low Concentration Near 10 17 cm -3 Mingda Zhu, 1,2,a) Meng Qi, 2 Kazuki Nomoto, 1, 2 Zongyang Hu, 1 Bo Song, 1 Ming Pan, 3 Xiang Gao, 3 Debdeep
More informationDeveloping Ohmic Contacts to Gallium Nitride. for High Temperature Applications. Shirong Zhao
Developing Ohmic Contacts to Gallium Nitride for High Temperature Applications by Shirong Zhao A Dissertation Presented in Partial Fulfillment of the Requirements for the Degree Doctor of Philosophy Approved
More informationChemical analysis of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures
Optica Applicata, Vol. XLIII, No. 1, 213 DOI: 1.277/oa1319 Chemical analysis of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures WOJCIECH MACHERZYŃSKI *, KORNELIA INDYKIEWICZ, BOGDAN PASZKIEWICZ
More informationSupporting Information. AlN/h-BN Heterostructures for Mg Dopant-Free Deep Ultraviolet Photonics
Supporting Information AlN/h-BN Heterostructures for Mg Dopant-Free Deep Ultraviolet Photonics D. A. Laleyan 1,2, S. Zhao 1, S. Y. Woo 3, H. N. Tran 1, H. B. Le 1, T. Szkopek 1, H. Guo 4, G. A. Botton
More informationRaman scattering and electrical characterization of AlGaAs/GaAs rectangular and triangular barriers grown by MOCVD
Raman scattering and electrical characterization of AlGaAs/GaAs rectangular and triangular barriers grown by MOCVD J. Díaz-Reyes * CIBA-IPN Ex-Hacienda de San Juan Molino Km. 1.5, Tepetitla, Tlaxcala.
More informationResistive switching of CeO x /SiO 2 stacked film based on anodic oxidation and breakdown
Feb. 19 th, 2015 WIMNACT-45 Resistive switching of /SiO 2 stacked film based on anodic oxidation and breakdown K. Kakushima Tokyo Institute of Technology 1 Introduction to resistive RAM (RRAM) Reset OFF
More informationAnnual Meeting. North Carolina State University Dr. Veena Misra. January 17 19, 2017 December
Annual Meeting North Carolina State University Dr. Veena Misra January 17 19, 2017 December 8 2015 1 Misra Group at NCSU Over 9 years experience in wide band gap research on SiC, GaN and Ga2O3. World leaders
More informationHigh Performance AlGaN Heterostructure Field-Effect Transistors
Kyma Inc. Contract ABR DTD 1/8/07; Prime: FA8650-06-C-5413 1 High Performance AlGaN Heterostructure Field-Effect Transistors Program Objectives The primary objectives of this program were to develop materials
More informationPERFORMANCE ENHANCEMENT OF GaN-BASED HIGH-POWER HEMTS BY SELECTIVE-AREA GROWTH USING PLASMA-ASSISTED MOLECULAR BEAM EPITAXY LIANG PANG THESIS
PERFORMANCE ENHANCEMENT OF GaN-BASED HIGH-POWER HEMTS BY SELECTIVE-AREA GROWTH USING PLASMA-ASSISTED MOLECULAR BEAM EPITAXY BY LIANG PANG THESIS Submitted in partial fulfillment of the requirements for
More informationUltra-high-performance of Self-Powered
Ultra-high-performance of Self-Powered β-ga 2 Thin Film Solar-blind Photodetector Grown on Cost-Effective Si Substrate using High-Temperature Seed Layer Kanika Arora, Neeraj Goel #, Mahesh Kumar # and
More information(12) United States Patent (10) Patent No.: US 6,852,615 B2
USOO6852615B2 (12) United States Patent (10) Patent No.: US 6,852,615 B2 Micovic et al. (45) Date of Patent: Feb. 8, 2005 (54) OHMIC CONTACTS FOR HIGH ELECTRON (56) References Cited MOBILITY TRANSISTORS
More informationSemiconductor Nanostructures
II H. von Känel Laboratorium für Festkörperphysik ETHZ Applications Lighting Field effect transistors Sensors Infrared sensors X-ray detectors Periodic table of elements Comparison of wurtzite and zinc-
More informationSingle Crystal Molybdenum Diselenide (MoSe2) data which includes Raman, photoluminescence, and 100x optical images.
MoSe2 Single Crystal Molybdenum Diselenide (MoSe2) Single crystal molybdenum diselenide (2H-MoSe2) comes in bulk. The sample comes with the data which includes Raman, photoluminescence, and 100x optical
More informationCurrent Gain Dependence on Subcollector and Etch-Stop Doping in InGaP/GaAs HBTs
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 48, NO. 5, MAY 2001 835 Current Gain Dependence on Subcollector and Etch-Stop Doping in InGaP/GaAs HBTs Theodore Chung, Seth R. Bank, John Epple, and Kuang-Chien
More informationErdong Wang Brookhaven National Laboratory
Characterization of Multi-Alkali antimonide Cathodes at Cryogenic Temperature and their Performance in SRF Gun Erdong Wang Brookhaven National Laboratory 9/9/2015 1 Outline Motivation Multi-alkali photocathode
More informationINTEGRATION OF N- AND P-CONTACTS TO GaN-BASED LIGHT EMITTING DIODES
International Journal of High Speed Electronics and Systems Vol. 20, No. 3 (2011) 521 525 World Scientific Publishing Company DOI: 10.1142/S0129156411006817 INTEGRATION OF N- AND P-CONTACTS TO GaN-BASED
More informationPhysical Degradation and Preparation for In-situ Microscopy of AlGaN/GaN-based HEMTs. A Thesis. Submitted to the Faculty.
Physical Degradation and Preparation for In-situ Microscopy of AlGaN/GaN-based HEMTs A Thesis Submitted to the Faculty of Drexel University by Andrew Charles Lang in partial fulfillment of the requirements
More informationRecent Progress in Non Cesiated III Nitride Photocathodes
Recent Progress in Non Cesiated III Nitride Photocathodes Douglas Bell, Shouleh Nikzad Amir Dabiran SVT Associates, Inc. Shadi Shahedipour, Neeraj Tripathi SUNY Albany 1st Workshop on Photocathodes: 300nm
More informationProcessing of III-Nitride (I) (Courtesy of Grace Xing at Notre Dame)
Processing of III-Nitride (I) (Courtesy of Grace Xing at Notre Dame) Outline: 1. Introduction 2. Dry etching Slide # 1 Introduction Hynix semiconductor Slide # 2 Introduction Hynix semiconductor Slide
More informationDevelopment and Applications of Wide Bandgap Semiconductors
1 Development and Applications of Wide Bandgap Semiconductors 1.1 Optical Devices (A. Yoshikawa) 1.1.1 Wide Bandgap Semiconductors Indispensable for Short Wavelength Optical Devices As the name implies,
More informationApplications for HFETs
Applications for HFETs Ga-face Quantum well is formed at the interface AlGaN GaN Buffer P SP P SP P PE -σ s +σ int 2DEG + ve φ b d σ comp AlGaN σ int E 0 GaN E c E F c-plane sapphire σ 2DEG σ surf Higher
More informationOPTICAL AND ELECTRICAL PROPERTIES OF EPITAXIAL SILVER FILMS GROWN ON SILICON
OPTICAL AND ELECTRICAL PROPERTIES OF EPITAXIAL SILVER FILMS GROWN ON SILICON by Jinxuan Wu B.S. in Electronic and Information Science and Technology, Peking University, 2009 Submitted to the Graduate Faculty
More informationTransmission Mode Photocathodes Covering the Spectral Range
Transmission Mode Photocathodes Covering the Spectral Range 6/19/2002 New Developments in Photodetection 3 rd Beaune Conference June 17-21, 2002 Arlynn Smith, Keith Passmore, Roger Sillmon, Rudy Benz ITT
More informationThe charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures
PACS 73.50.Gr, 84.32.Tt, 85.30.Tv The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures V.A. Ievtukh, V.V. Ulyanov, A.N.
More informationAFRL-SR-AR-TR
REPORT DOCUMENTATION PAGE AFRL-SR-AR-TR-10-0203 The public reporting burden for this collection of information is estimated to average 1 hour per response, including th
More informationDirect growth of III-V quantum dot materials on silicon
Direct growth of III-V quantum dot materials on silicon John Bowers, Alan Liu, Art Gossard Director, Institute for Energy Efficiency University of California, Santa Barbara http://optoelectronics.ece.ucsb.edu/
More informationCHAPTER 4 LED LIGHT EMITTING DIODE
CHAPTER 4 LED LIGHT EMITTING DIODE 1 PART II LIGHT EMITTING DIODE LED are semiconductor p-n junctions that under forward bias conditions can emit What is LED? radiation by electroluminescence in the UV,
More informationAl/AlN/Si MIS Structures with Pulsed-Laser-Deposited AlN Films as Gate Dielectrics: Electrical Properties
ROMANIAN JOURNAL OF INFORMATION SCIENCE AND TECHNOLOGY Volume 10, Number 3, 2007, 251 259 Al/AlN/Si MIS Structures with Pulsed-Laser-Deposited AlN Films as Gate Dielectrics: Electrical Properties S. SIMEONOV
More informationEffect of Buffer Mole Fraction on AlGaN/GaN Field-Plated HEMT on Threshold, Device Leakage and Frequency
Effect of Buffer Mole Fraction on AlGaN/GaN Field-Plated HEMT on Threshold, Device Leakage and Frequency S.Baskaran 1, A.Nithya 2, P.Palani 3 Professor, Department of Electronics and Communicaton Engineering,
More informationMaterials of Engineering ENGR 151 ELECTRCIAL PROPERTIES
Materials of Engineering ENGR 151 ELECTRCIAL PROPERTIES ELECTRON ENERGY BAND STRUCTURES Atomic states split to form energy bands Adapted from Fig. 18.2, Callister & Rethwisch 9e. 2 BAND STRUCTURE REPRESENTATION
More informationPublished in: Proceedings of the 20th Annual Symposium of the IEEE Photonics Benelux Chapter, November 2015, Brussels, Belgium
Low optical loss n-type ohmic contacts for InP-based membrane devices Shen, L.; Veldhoven, van, P.J.; Jiao, Y.; Dolores Calzadilla, V.M.; van der Tol, J.J.G.M.; Roelkens, G.; Smit, M.K. Published in: Proceedings
More informationMemory Devices. Ki-Nam Kim, President, Institut of Technology Samsung Electronics, 2010 IEDM, San Francisco.
Memory Devices In Korea now, Samsung : 2010, 30nm 2Gb DDRS DRAM/DDR3 SRAM 2011, Invest US $12 bil. for 20nm & SysLSI. Hynix : 2010, 26nm MLC- NAND Flash 2011, 30nm 4Gb DRAM At 2020, the demands of computing
More informationGeorgia Institute of Technology School of Electrical and Computer Engineering. Ohmic Contacts for Wide Bandgap Devices
Georgia Institute of Technology School of Electrical and Computer Engineering Ohmic Contacts for Wide Bandgap Devices By Zen Mehra Candidate for Bachelor of Science in Electrical Engineering Undergraduate
More informationSCIENCE CHINA Physics, Mechanics & Astronomy. Study on growing thick AlGaN layer on c-plane sapphire substrate and free-standing GaN substrate
SCIENCE CHINA Physics, Mechanics & Astronomy Article December 2012 Vol.55 No.12: 2383 2388 doi: 10.1007/s11433-012-4926-z Study on growing thick AlGaN layer on c-plane sapphire substrate and free-standing
More informationTransport characterisation of group III-nitride materials with dominating surface effects
Transport characterisation of group III-nitride materials with dominating surface effects Tamara Brooke Fehlberg BE (Hons), BSc This thesis is presented for the degree of Doctor of Philosophy of The University
More information