Organische Elektronik

Size: px
Start display at page:

Download "Organische Elektronik"

Transcription

1 Organic Electronics MatWi II (summer term 2012) Introduction: Organic electronics Fabrication and characterization of organic thin films Devices: solar cells, OLEDs, OFETs blackboard part: OFET Priv. Doz. Bert Nickel Organische Elektronik 1

2 Papers / year Trends in organic electronics 300 organic light emitting diode OR OLED organic field effect transistor OR OFET organic solar cell organic field effect transistor sensor 40 inch Samsung OLED display OLED FETs Philips Solar year Georgia Institute of Technology (Pentacene+C60 solar cell, 2.7 % efficiency) AMOLED displays 2

3 OLEDs for lightening AP photo Anil Duggal, who heads up GE Global Research's Organic Electronics Project, says sheets of organic light-emitting diodes, such as the one above, might be the future of lighting. OLED TV announced for 2nd half of Zoll (140 cm) 3

4 O-Solar cells Science 2007 "The result is six and a half percent efficiency," said Heeger. "This is the highest level achieved for solar cells made from organic materials. I am confident that we can make additional improvements that will yield efficiencies sufficiently high for commercial products." He expects this technology to be on the market in about three years. Alan Heeger / University of California - Santa Barbara How is this possible, or what do we need for organic electronics? 4

5 Silicon: microstructering and doping Intel 80486DX2 Strukturierter Si-wafer Organic materials (hydrocarbons) in everydays life 5

6 are good insulators Polyethylen (PE) all electrons covalently bound MatWi I electron density 6

7 electron mobility (Drude Model) sp2 hybridisation (C 2 H 4 ): s s s s s p-orbital 7

8 conjugated and aromatic molecules: p-electrons Molekulare Orbitale (MO) von aromatischen Molekülen: Bsp. Benzol 8

9 Bezeichnung der Orbitale: HOMO und LUMO Nobel Preis Chemie 2000: Alan J. Heeger 9

10 Doped polymers are conducting: PDOT : PSS poly(styrenesulfonate), Nobelprices for aromatic and conjugated materials Graphene 2010 physics Polyacetylene 2000 chemistry Fullerenes 1996 chemistry 10

11 11

12 Linear acenes: HOMO LUMO band gap Bsp. Pentacene: Absorption Translation valence band, conduction band, electron-hole pair, doping, traps for charge carriers, phonons, energy bands, Drude model, electroluminescence, surface states LUMO, HOMO, excitonic states, chemical impurities, vibrations, hopping, fluorescence and phosphorescence, singulets, triplets, anhilation, oxidation, reduction 12

13 The vision of organic electronics: mass printing Status Quo... 90% of OLEDs, by far the most important application of organic electronics at the moment, are produced by vapor deposition of small molecules [Source: ICB 10 July 2008 ] 13

14 Organic materials deposition and growth Record material: Pentacene C 22 H 14 Properties: hole mobility larger than electron mobility forms well-ordered layers when evaporated in vacuum at RT gold contact are reasonably well matched 14

15 Pentacene-deposition by vacuum sublimation, accuracy ca. 0.1 nm (QMC) Pentacene film growth H H H H H H Si OH OH OH OH OH OH SiO 2 Si mm 10 mm Phys. Rev. B (2003) 15

16 Diffusion limited Aggregation (DLA) diffusion nucleation surface modification = Diffusionsenergie = Diffusionskonstante temperature deposition rate island formation R = D / F Molecular structure: Bragg-scattering APL (2004) 16

17 1.5µm Pentacene growth (thick films) Comparison: Coronene films 3µm M. Huth (LMU), diploma thesis (2006) 17

18 surface energy determines growth mode (Wulf Konstruktion) 18

19 Summary: Deposition and structure Growth mode of small molecules largely determined by molecular shape and surface energy molecular arrangement can be determined by x-ray experiments Carrier mobility 19

20 little overlap - bands are flat mass of the carriers is high mobility is low Güte des Kristalls 20

21 Measurement of mobility: Time-Of-Flight: Kepler & LeBlanc 1960 for Anthracene crystals TOF-Geometry 1. Generation of Elektron-Hole pairs by hard light pulse ( pulse 0.76ns) Charge carriers are generated at the surface due to adsorption 2. measurement of displacement current Experiment injection free method electron and hole current separately typical mobility for organics m = 1 cm 2 /Vs same as amorphous Si 21

22 traps reduce mobility µ 0 (T): intrinsic mobility E T : trap energy N T /N 0 : trapping vs. conduction states mobility, in the presence of shallow traps: m(t) = N T N 0 m 0 (T) E T 1 + [exp( ) -1] k B T where m 0 (T) ~ T -n n depending on material, scattering mechanisms, etc. grain boundaries reduce mobility Horowitz Adv. Mat. (2000) 22

23 Comparison of organic and inorganic Semiconductors E [ev] E gap E vac E cb narrow bands ( ca. 100meV at 300K ) high mass E F 5.8 E vb x bandgap E gap 3.6eV (diamond E gap = 5.5eV) k B T = 26meV at 300K Compared to tetracene: no free carriers in thermal equilibrium strong influence of traps Summary electronic properties conjugated and aromatic molecules have delocalized electrons (p electrons) small organic molecules form highly ordered crystals, while polymer films are only partially ordered Details der Anordnung der MO und Symmetrie bestimmen die elektronischen Eigenschaften organic molecules have large band gaps (typically 2 ev), few or no intrinsic carriers at RT bands are flat, dispersion typically 100 mev Quality matters for mobility (grain boundarys, traps) 23

24 Thin-film devices transistors p-n contacts (diodes, solar cells, oleds) Thin film transistors 24

25 Thin film transistors - design -8 2 Thermal SiO 2 (200nm)( C ox F / cm ) Gold-Structure(bottom-contact) ~ 48 nm Pentacene 200 µ m 750 µ m 250 µ m Contacts (60 nm Au + 3nm Ti) w = 10 µm l = 20 µm Channel Transistor channel Pentacene on SiO µm 2.5 µm 25 µm 5 µm Fieldeffect-Transistors from pentacene molecules 25

26 I SD * 10-5 [A] Organic field effect transistors (see blackboard for characteristic curve) Precise saturation behaviour Linear regime V G = 0 V V G = -10 V V G = -20 V V G = -30 V Ohmic contacts V SD [V] p-type pentacene bottom-contact OTFTs Pentacene TFTs : Trap density 1st measurement last measurement Threshold shift V T deep traps Energy level far from HOMO level Fixed interface charges Hysteresis V shallow traps Energy level near HOMO level Can be released thermally ID 0099: ID 0099: M. Fiebig (LMU, LS Kotthaus), Diploma thesis

27 Diodes, solar cells Si the p/n- junction enegy band deformation by doping 27

28 Optical excitations in organic crystals Singulet excitons diffuse within the organic crystal until they decay fluorescent or radiationless. Lifetime is very short (fs-ps), therefore diffusion length is only nm. Exciton splitting at hetero-junctions Appl. Phys. Lett. 48, 183 (1986) Two layer organic photovoltaic cell C. W. Tang Modellsystem: Pentacene/C60 (C60 erst ab 1985 bekannt) p n 28

29 Organic solar cells e h Wikipedia: Solar cell 29

30 Summary all important devices can be made by organic electronics: oleds Field-Effect-Transistors (FETs) Solar cells Materials science aspects have huge influence on performance: structural defects, chemical impurities, lifetime and stability 30

AMOLED displays. OLEDs for lightening. Organic Electronics

AMOLED displays. OLEDs for lightening. Organic Electronics Organic Electronics AMOLED displays MatWi II summer term 2015 Priv. Doz. Bert Nickel (nickel@lmu.de) Introduction: Organic electronics Fabrication and characterization of organic thin films Devices: solar

More information

The Effect of Interfacial Roughness on the Electrical Properties of Organic Thin Film Transistors with Anisotropic Dielectric Layer

The Effect of Interfacial Roughness on the Electrical Properties of Organic Thin Film Transistors with Anisotropic Dielectric Layer Mol. Cryst. Liq. Cryst., Vol. 476, pp. 157=[403] 163=[409], 2007 Copyright # Taylor & Francis Group, LLC ISSN: 1542-1406 print=1563-5287 online DOI: 10.1080/15421400701735673 The Effect of Interfacial

More information

Organic Light-Emitting Diodes. By: Sanjay Tiwari

Organic Light-Emitting Diodes. By: Sanjay Tiwari Organic Light-Emitting Diodes By: Sanjay Tiwari Inorganic Vs. Organic Material Properties Limitations At Early Stage Organic materials have often proved to be unstable. Making reliable electrical contacts

More information

Crystalline Silicon Solar Cells With Two Different Metals. Toshiyuki Sameshima*, Kazuya Kogure, and Masahiko Hasumi

Crystalline Silicon Solar Cells With Two Different Metals. Toshiyuki Sameshima*, Kazuya Kogure, and Masahiko Hasumi Crystalline Silicon Solar Cells With Two Different Metals Toshiyuki Sameshima*, Kazuya Kogure, and Masahiko Hasumi Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588,

More information

Summary and Scope for further study

Summary and Scope for further study Chapter 6 Summary and Scope for further study 6.1 Summary of the present study Transparent electronics is an emerging science and technology field concentrated on fabricating invisible electronic circuits

More information

AIST, 2 CREST/AIST, 3 Univ. Of Tsukuba

AIST, 2 CREST/AIST, 3 Univ. Of Tsukuba A. Traoré 1, A. Nakajima 1, T. Makino 1,2, D. Kuwabara 1,2,3, H. Kato 1,2, M. Ogura 1,2, D. Takeuchi 1,2, and S. Yamasaki 1,2,3 1 AIST, 2 CREST/AIST, 3 Univ. Of Tsukuba aboulaye.traore@aist.go.jp Diamond

More information

Charge carrier transport in organic field-effect devices based on copper-phthalocyanine

Charge carrier transport in organic field-effect devices based on copper-phthalocyanine Dissertation zur Erlangung des Doktorgrades der Naturwissenschaften (Dr. rer. nat.) Charge carrier transport in organic field-effect devices based on copper-phthalocyanine Michael Kraus März 2011 Arbeitsgruppe

More information

Amorphous-like Density of Gap States in Single Crystal Pentacene

Amorphous-like Density of Gap States in Single Crystal Pentacene Amorphous-like Density of Gap States in Single Crystal Pentacene D. V. Lang 1, X. Chi 2, T. Siegrist 3, A. M. Sergent 3, and A. P. Ramirez 3 1 Los Alamos National Laboratory, Los Alamos, NM 87545 2 Columbia

More information

Electronic transport through Single Organic Crystals

Electronic transport through Single Organic Crystals Electronic transport through Single Organic Crystals Alberto Morpurgo The Delft Team * R.W.I. de Boer * A. Stassen * N. Iosad Collaborations * M.E Gershenson * N.Karl * T.T.M. Palstra Outline Introduction

More information

EE 5611 Introduction to Microelectronic Technologies Fall Tuesday, September 04, 2012 Lecture 01

EE 5611 Introduction to Microelectronic Technologies Fall Tuesday, September 04, 2012 Lecture 01 EE 5611 Introduction to Microelectronic Technologies Fall 2012 Tuesday, September 04, 2012 Lecture 01 1 Instructor: Jing Bai Contact Email: jingbai@d.umn.edu, hone: (218)726-8606, Office: MWAH 255 Webpage:

More information

Electricity from the Sun (photovoltaics)

Electricity from the Sun (photovoltaics) Electricity from the Sun (photovoltaics) 0.4 TW US Electricity Consumption 100 100 square kilometers of solar cells could produce all the electricity for the US. But they are still too costly. The required

More information

Chapter 18: Electrical Properties

Chapter 18: Electrical Properties Chapter 18: Electrical Properties What are the physical phenomena that distinguish conductors, semiconductors, and insulators? For metals, how is conductivity affected by imperfections, T, and deformation?

More information

Characterization and control of defect states of polycrystalline silicon thin film transistor fabricated by laser crystallization

Characterization and control of defect states of polycrystalline silicon thin film transistor fabricated by laser crystallization Journal of Non-Crystalline Solids 299 302 (2002) 1321 1325 www.elsevier.com/locate/jnoncrysol Characterization and control of defect states of polycrystalline silicon thin film transistor fabricated by

More information

Citation for published version (APA): Maddalena, F. (2011). Organic field-effect transistors for sensing applications Groningen: s.n.

Citation for published version (APA): Maddalena, F. (2011). Organic field-effect transistors for sensing applications Groningen: s.n. University of Groningen Organic field-effect transistors for sensing applications Maddalena, Francesco IMPORTANT NOTE: You are advised to consult the publisher's version (publisher's PDF) if you wish to

More information

M. Hasumi, J. Takenezawa, Y. Kanda, T. Nagao and T. Sameshima

M. Hasumi, J. Takenezawa, Y. Kanda, T. Nagao and T. Sameshima Proceedings of 6th Thin Film Materials & Devices Meeting November 2-3, 2009, Kyoto, Japan http://www.tfmd.jp/ Characterization of SiO x /Si Interface Properties by Photo Induced Carrier Microwave Absorption

More information

ME 432 Fundamentals of Modern Photovoltaics. Discussion 30: Contacts 7 November 2018

ME 432 Fundamentals of Modern Photovoltaics. Discussion 30: Contacts 7 November 2018 ME 432 Fundamentals of Modern Photovoltaics Discussion 30: Contacts 7 November 2018 Fundamental concepts underlying PV conversion input solar spectrum light absorption carrier excitation & thermalization

More information

FABRICATION ENGINEERING MICRO- NANOSCALE ATTHE AND. Fourth Edition STEPHEN A. CAMPBELL. of Minnesota. University OXFORD UNIVERSITY PRESS

FABRICATION ENGINEERING MICRO- NANOSCALE ATTHE AND. Fourth Edition STEPHEN A. CAMPBELL. of Minnesota. University OXFORD UNIVERSITY PRESS AND FABRICATION ENGINEERING ATTHE MICRO- NANOSCALE Fourth Edition STEPHEN A. CAMPBELL University of Minnesota New York Oxford OXFORD UNIVERSITY PRESS CONTENTS Preface xiii prrt i OVERVIEW AND MATERIALS

More information

ECE 541/ME 541 Microelectronic Fabrication Techniques

ECE 541/ME 541 Microelectronic Fabrication Techniques ECE 541/ME 541 Microelectronic Fabrication Techniques MW 4:00-5:15 pm Metrology and Characterization Zheng Yang ERF 3017, email: yangzhen@uic.edu ECE541/ME541 Microelectronic Fabrication Techniques Page

More information

Materials of Engineering ENGR 151 ELECTRCIAL PROPERTIES

Materials of Engineering ENGR 151 ELECTRCIAL PROPERTIES Materials of Engineering ENGR 151 ELECTRCIAL PROPERTIES ELECTRON ENERGY BAND STRUCTURES Atomic states split to form energy bands Adapted from Fig. 18.2, Callister & Rethwisch 9e. 2 BAND STRUCTURE REPRESENTATION

More information

Project III. 4: THIN FILM DEVICES FOR LARGE AREA ELECTRONICS

Project III. 4: THIN FILM DEVICES FOR LARGE AREA ELECTRONICS Project III. 4: THIN FILM DEVICES FOR LARGE AREA ELECTRONICS Project leader: Dr D.N. Kouvatsos Collaborating researchers from other projects: Dr D. Davazoglou Ph.D. candidates: M. Exarchos, L. Michalas

More information

PHYSICSOF SOLARCELLS. Jenny Nelson. Imperial College, UK. Imperial College Press ICP

PHYSICSOF SOLARCELLS. Jenny Nelson. Imperial College, UK. Imperial College Press ICP im- PHYSICSOF SOLARCELLS Jenny Nelson Imperial College, UK ICP Imperial College Press Contents Preface v Chapter 1 Introduction 1 1.1. Photons In, Electrons Out: The Photovoltaic Effect 1 1.2. Brief History

More information

Vacuum, Ar, and O 2 annealing effects on bandgap-tunable semiconducting amorphous Cd Ga O thinfilms

Vacuum, Ar, and O 2 annealing effects on bandgap-tunable semiconducting amorphous Cd Ga O thinfilms Full paper Vacuum, Ar, and O 2 annealing effects on bandgap-tunable semiconducting amorphous Cd Ga O thinfilms Chiyuki SATO *, Yota KIMURA * and Hiroshi YANAGI *, **,³ *Interdisciplinary Graduate School

More information

Molecular Beam Epitaxy Growth of GaAs 1-x Bi x

Molecular Beam Epitaxy Growth of GaAs 1-x Bi x Molecular Beam Epitaxy Growth of GaAs 1-x Bi x Dan Beaton, Ryan Lewis, Xianfeng Lu, Mostafa Masnadi-Shirazi, Sebastien Tixier, Erin Young, Martin Adamcyk, UBC, Vancouver, BC B. Fluegel, A. Mascarenhas,

More information

Agenda o Semiconductor Materials o Crystal Growth o Intrinsic Semiconductors o Extrinsic Semiconductors

Agenda o Semiconductor Materials o Crystal Growth o Intrinsic Semiconductors o Extrinsic Semiconductors E84 Lecture 3/6/14 K. Candler Agenda o Semiconductor Materials o Crystal Growth o Intrinsic Semiconductors o Extrinsic Semiconductors Introduction A semiconductor is a material that has electrical conductivity

More information

Hei Wong.

Hei Wong. Defects and Disorders in Hafnium Oxide and at Hafnium Oxide/Silicon Interface Hei Wong City University of Hong Kong Email: heiwong@ieee.org Tokyo MQ2012 1 Outline 1. Introduction, disorders and defects

More information

Excimer Laser Annealing of Hydrogen Modulation Doped a-si Film

Excimer Laser Annealing of Hydrogen Modulation Doped a-si Film Materials Transactions, Vol. 48, No. 5 (27) pp. 975 to 979 #27 The Japan Institute of Metals Excimer Laser Annealing of Hydrogen Modulation Doped a-si Film Akira Heya 1, Naoto Matsuo 1, Tadashi Serikawa

More information

Semiconductor Optical Communication Components and Devices Lecture 30: Lasers Reliability

Semiconductor Optical Communication Components and Devices Lecture 30: Lasers Reliability Semiconductor Optical Communication Components and Devices Lecture 30: Lasers Reliability Prof. Utpal Das Professor, Department of Electrical Engineering, Laser Technology Program, Indian Institute of

More information

Slide 1. Slide 2. Slide 3. Chapter 19: Electronic Materials. Learning Objectives. Introduction

Slide 1. Slide 2. Slide 3. Chapter 19: Electronic Materials. Learning Objectives. Introduction Slide 1 Chapter 19: Electronic Materials 19-1 Slide 2 Learning Objectives 1. Ohm s law and electrical conductivity 2. Band structure of solids 3. Conductivity of metals and alloys 4. Semiconductors 5.

More information

Supplementary Figure 1 BP nucleation within pentacene TFP induced by

Supplementary Figure 1 BP nucleation within pentacene TFP induced by Supplementary Figure 1 BP nucleation within pentacene TFP induced by aggregates of BP on top. (a) X-ray diffraction of a thick pentacene layer (average thickness 120 nm) deposited on SiO 2 / Si at a substrate

More information

REAR SURFACE PASSIVATION OF INTERDIGITATED BACK CONTACT SILICON HETEROJUNCTION SOLAR CELL AND 2D SIMULATION STUDY

REAR SURFACE PASSIVATION OF INTERDIGITATED BACK CONTACT SILICON HETEROJUNCTION SOLAR CELL AND 2D SIMULATION STUDY REAR SURFACE PASSIVATION OF INTERDIGITATED BACK CONTACT SILICON HETEROJUNCTION SOLAR CELL AND 2D SIMULATION STUDY Meijun Lu 1,2, Ujjwal Das 1, Stuart Bowden 1, and Robert Birkmire 1,2 1 Institute of Energy

More information

R Sensor resistance (Ω) ρ Specific resistivity of bulk Silicon (Ω cm) d Diameter of measuring point (cm)

R Sensor resistance (Ω) ρ Specific resistivity of bulk Silicon (Ω cm) d Diameter of measuring point (cm) 4 Silicon Temperature Sensors 4.1 Introduction The KTY temperature sensor developed by Infineon Technologies is based on the principle of the Spreading Resistance. The expression Spreading Resistance derives

More information

EXCIMER LASER ANNEALING FOR LOW- TEMPERATURE POLYSILICON THIN FILM TRANSISTOR FABRICATION ON PLASTIC SUBSTRATES

EXCIMER LASER ANNEALING FOR LOW- TEMPERATURE POLYSILICON THIN FILM TRANSISTOR FABRICATION ON PLASTIC SUBSTRATES EXCIMER LASER ANNEALING FOR LOW- TEMPERATURE POLYSILICON THIN FILM TRANSISTOR FABRICATION ON PLASTIC SUBSTRATES G. Fortunato, A. Pecora, L. Maiolo, M. Cuscunà, D. Simeone, A. Minotti, and L. Mariucci CNR-IMM,

More information

Effect of grain boundaries on photovoltaic properties of PX-GaAs films

Effect of grain boundaries on photovoltaic properties of PX-GaAs films Indian Journal of Pure & Applied Physics Vol. 48, August 2010, pp. 575-580 Effect of grain boundaries on photovoltaic properties of PX-GaAs films M K Sharma & D P Joshi* Principal, Govt Sr Sec School Kolar,

More information

Effect of Post-Deposition Treatment on Characteristics of P-channel SnO

Effect of Post-Deposition Treatment on Characteristics of P-channel SnO Effect of Post-Deposition Treatment on Characteristics of P-channel SnO Thin-Film Transistors 1 Byeong-Jun Song, 2 Ho-Nyeon Lee 1, First Author Department of Electric & Robotics Engineering, Soonchunhyang

More information

State of the art quality of a GeOx interfacial passivation layer formed on Ge(001)

State of the art quality of a GeOx interfacial passivation layer formed on Ge(001) APPLICATION NOTE State of the art quality of a Ox interfacial passivation layer formed on (001) Summary A number of research efforts have been made to realize Metal-Oxide-Semiconductor Field Effect Transistors

More information

Polycrystalline Silicon Thin-Film Transistors Fabricated by Defect Reduction Methods

Polycrystalline Silicon Thin-Film Transistors Fabricated by Defect Reduction Methods IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 49, NO. 12, DECEMBER 2002 2217 Polycrystalline Silicon Thin-Film Transistors Fabricated by Defect Reduction Methods H. Watakabe and T. Sameshima Abstract Fabrication

More information

FIRST-PRINCIPLES MODELLING OF DOPANTS AT INTERFACES IN TCO MATERIALS

FIRST-PRINCIPLES MODELLING OF DOPANTS AT INTERFACES IN TCO MATERIALS FIRST-PRINCIPLES MODELLING OF DOPANTS AT INTERFACES IN TCO MATERIALS Wolfgang Körner and Christian Elsässer, Fraunhofer Institute for Mechanics of Materials IWM, Freiburg, Germany Workshop Transparente

More information

Materials, Electronics and Renewable Energy

Materials, Electronics and Renewable Energy Materials, Electronics and Renewable Energy Neil Greenham ncg11@cam.ac.uk Inorganic semiconductor solar cells Current-Voltage characteristic for photovoltaic semiconductor electrodes light Must specify

More information

ET3034TUx High efficiency concepts of c- Si wafer based solar cells

ET3034TUx High efficiency concepts of c- Si wafer based solar cells ET3034TUx - 4.4 - High efficiency concepts of c- Si wafer based solar cells In the previous block we have discussed various technological aspects on crystalline silicon wafer based PV technology. In this

More information

Materials Aspects of GaAs and InP Based Structures

Materials Aspects of GaAs and InP Based Structures AT&T Materials Aspects of GaAs and InP Based Structures V. Swaminathan AT&T Belt Laboratories Breinigsvil/e, Pennsylvania A. T. Macrander Argonne National Laboratory Argonne, Illinois m Prentice Hall,

More information

EE 5611 Introduction to Microelectronic Technologies Fall Tuesday, September 02, 2014 Lecture 01

EE 5611 Introduction to Microelectronic Technologies Fall Tuesday, September 02, 2014 Lecture 01 EE 5611 Introduction to Microelectronic Technologies Fall 2014 Tuesday, September 02, 2014 Lecture 01 1 Instructor: Jing Bai Contact Email: jingbai@d.umn.edu, hone: (218)726-8606, Office: MWAH 255 Webpage:

More information

Passivation of SiO 2 /Si Interfaces Using High-Pressure-H 2 O-Vapor Heating

Passivation of SiO 2 /Si Interfaces Using High-Pressure-H 2 O-Vapor Heating Jpn. J. Appl. Phys. Vol. 39 (2000) pp. 2492 2496 Part, No. 5A, May 2000 c 2000 The Japan Society of Applied Physics Passivation of O 2 / Interfaces Using High-Pressure-H 2 O-Vapor Heating Keiji SAKAMOTO

More information

Advanced Analytical Chemistry Lecture 9. Chem 4631

Advanced Analytical Chemistry Lecture 9. Chem 4631 Advanced Analytical Chemistry Lecture 9 Chem 4631 Solar Cell Research Solar Cell Research Solar Cell Research Solar Cell Research Thin film technologies Candidates for thin-film solar cells: Crystalline

More information

I. GaAs Material Properties

I. GaAs Material Properties I. GaAs Material Properties S. Kayali GaAs is a III V compound semiconductor composed of the element gallium (Ga) from column III and the element arsenic (As) from column V of the periodic table of the

More information

Microelectronics Devices

Microelectronics Devices Microelectronics Devices Yao-Joe Yang 1 Outline Basic semiconductor physics Semiconductor devices Resistors Capacitors P-N diodes BJT/MOSFET 2 Type of Solid Materials Solid materials may be classified

More information

Activation Behavior of Boron and Phosphorus Atoms Implanted in Polycrystalline Silicon Films by Heat Treatment at 250 C

Activation Behavior of Boron and Phosphorus Atoms Implanted in Polycrystalline Silicon Films by Heat Treatment at 250 C Japanese Journal of Applied Physics Vol. 44, No. 3, 2005, pp. 1186 1191 #2005 The Japan Society of Applied Physics Activation Behavior of Boron and Phosphorus Atoms Implanted in Polycrystalline Silicon

More information

Semiconductor Very Basics

Semiconductor Very Basics Semiconductor Very Basics Material (mostly) from Semiconductor Devices, Physics & Technology, S.M. Sze, John Wiley & Sons Semiconductor Detectors, H. Spieler (notes) July 3, 2003 Conductors, Semi-Conductors,

More information

Growth and electrical properties of N,N[sup ]-bis(n-pentyl)terrylene- 3,4:11,12-tetracarboximide thin

Growth and electrical properties of N,N[sup ]-bis(n-pentyl)terrylene- 3,4:11,12-tetracarboximide thin Growth and electrical properties of N,N[sup ]-bis(n-pentyl)terrylene- 3,4:11,12-tetracarboximide thin films Matthieu Petit, Ryoma Hayakawa, Yasuhiro Shirai, Yutaka Wakayama, Jonathan P. Hill, Katsuhiko

More information

MATERIALS. Silicon Wafers... J 04 J 01. MATERIALS / Inorganics & thin films guide

MATERIALS. Silicon Wafers... J 04 J 01. MATERIALS / Inorganics & thin films guide J MATERIALS SUBSTRATES Silicon Wafers... J 04 J J 01 MATERIALS SUBSTRATES NEYCO has a complete range of crystal substrates for a wide variety of applications, including Semiconductor, Biotechnology, Nanotechnology,

More information

The story so far: Isolated defects

The story so far: Isolated defects The story so far: Infinite, periodic structures have Bloch wave single-particle states, labeled by a wavenumber k. Translational symmetry of the lattice + periodic boundary conditions give discrete allowed

More information

Induced Crystallization of Rubrene with Diazapentacene as the Template Danqing Liu, 1 Zhefeng Li, 1 Zikai He, 1 Jianbin Xu, 2 Qian Miao* 1, 3

Induced Crystallization of Rubrene with Diazapentacene as the Template Danqing Liu, 1 Zhefeng Li, 1 Zikai He, 1 Jianbin Xu, 2 Qian Miao* 1, 3 Electronic Supplementary Information for: Induced Crystallization of Rubrene with Diazapentacene as the Template Danqing Liu, 1 Zhefeng Li, 1 Zikai He, 1 Jianbin Xu, 2 Qian Miao* 1, 3 1 Department of Chemistry,

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION An electrodeposited inhomogeneous metal insulator semiconductor junction for efficient photoelectrochemical water oxidation James C. Hill, Alan T. Landers, Jay A. Switzer * Missouri University of Science

More information

ATOMIC LAYER DEPOSITION OF 2D TRANSITION METAL DICHALOGENIDES

ATOMIC LAYER DEPOSITION OF 2D TRANSITION METAL DICHALOGENIDES ATOMIC LAYER DEPOSITION OF 2D TRANSITION METAL DICHALOGENIDES Annelies Delabie, M. Caymax, B. Groven, M. Heyne, K. Haesevoets, J. Meersschaut, T. Nuytten, H. Bender, T. Conard, P. Verdonck, S. Van Elshocht,

More information

Developing high efficiency thin film silicon photovoltaics for the urban environment.

Developing high efficiency thin film silicon photovoltaics for the urban environment. Developing high efficiency thin film silicon photovoltaics for the urban environment. Bruce Hamilton University of Manchester, UK 1 Energy Security Symposium Qatar 2011 Research could impact on energy

More information

Halbleiter Prof. Yong Lei Prof. Thomas Hannappel

Halbleiter Prof. Yong Lei Prof. Thomas Hannappel Halbleiter Prof. Yong Lei Prof. Thomas Hannappel yong.lei@tu-ilmenau.de thomas.hannappel@tu-ilmenau.de http://www.tu-ilmenau.de/nanostruk/ Solid State Structure of Semiconductor Semiconductor manufacturing

More information

Chapter 18: Electrical Properties

Chapter 18: Electrical Properties Chapter 18: Electrical Properties ISSUES TO ADDRESS... How are electrical conductance and resistance characterized? What are the physical phenomena that distinguish conductors, semiconductors, and insulators?

More information

The Impact of Capping on the Mobility and Thermal Stability of Organic Thin Film Transistors

The Impact of Capping on the Mobility and Thermal Stability of Organic Thin Film Transistors Mater. Res. Soc. Symp. Proc. Vol. 965 2007 Materials Research Society 0965-S06-13 The Impact of Capping on the Mobility and Thermal Stability of Organic Thin Film Transistors Stephan Meyer 1, Stefan Sellner

More information

Correlation Between Energy Gap and Defect Formation of Al Doped Zinc Oxide on Carbon Doped Silicon Oxide

Correlation Between Energy Gap and Defect Formation of Al Doped Zinc Oxide on Carbon Doped Silicon Oxide TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS Vol. 15, No. 4, pp. 207-212, August 25, 2014 Regular Paper pissn: 1229-7607 eissn: 2092-7592 DOI: http://dx.doi.org/10.4313/teem.2014.15.4.207 Correlation

More information

THERMAL OXIDATION - Chapter 6 Basic Concepts

THERMAL OXIDATION - Chapter 6 Basic Concepts THERMAL OXIDATION - Chapter 6 Basic Concepts SiO 2 and the Si/SiO 2 interface are the principal reasons for silicon s dominance in the IC industry. Oxide Thickness µm 0. µm 0 nm nm Thermally Grown Oxides

More information

Visit

Visit Practical Applications for Nano- Electronics by Vimal Gopee E-mail: Vimal.gopee@npl.co.uk 10/10/12 Your Delegate Webinar Control Panel Open and close your panel Full screen view Raise hand for Q&A at the

More information

行政院國家科學委員會補助專題研究計畫成果報告

行政院國家科學委員會補助專題研究計畫成果報告 NSC89-2215-E-009-104 89 08 01 90 07 31 Fabrication and Characterization of Low-Temperature Polysilicon Thin Film Transistors with Novel Self-Aligned Sub-Gate Structures NSC89-2215-E009-104 (FID) self-aligned

More information

Chapter 3 Silicon Device Fabrication Technology

Chapter 3 Silicon Device Fabrication Technology Chapter 3 Silicon Device Fabrication Technology Over 10 15 transistors (or 100,000 for every person in the world) are manufactured every year. VLSI (Very Large Scale Integration) ULSI (Ultra Large Scale

More information

Supplementary Figure S1 Photograph of MoS 2 and WS 2 flakes exfoliated by different metal naphthalenide (metal = Na, K, Li), and dispersed in water.

Supplementary Figure S1 Photograph of MoS 2 and WS 2 flakes exfoliated by different metal naphthalenide (metal = Na, K, Li), and dispersed in water. Supplementary Figure S1 Photograph of MoS 2 and WS 2 flakes exfoliated by different metal naphthalenide (metal = Na, K, Li), and dispersed in water. Supplementary Figure S2 AFM measurement of typical LTMDs

More information

3.46 OPTICAL AND OPTOELECTRONIC MATERIALS

3.46 OPTICAL AND OPTOELECTRONIC MATERIALS Badgap Engineering: Precise Control of Emission Wavelength Wavelength Division Multiplexing Fiber Transmission Window Optical Amplification Spectrum Design and Fabrication of emitters and detectors Composition

More information

Transmission Mode Photocathodes Covering the Spectral Range

Transmission Mode Photocathodes Covering the Spectral Range Transmission Mode Photocathodes Covering the Spectral Range 6/19/2002 New Developments in Photodetection 3 rd Beaune Conference June 17-21, 2002 Arlynn Smith, Keith Passmore, Roger Sillmon, Rudy Benz ITT

More information

Properties of Inclined Silicon Carbide Thin Films Deposited by Vacuum Thermal Evaporation

Properties of Inclined Silicon Carbide Thin Films Deposited by Vacuum Thermal Evaporation 182 Properties of Inclined Silicon Carbide Thin Films Deposited by Vacuum Thermal Evaporation Oday A. Hamadi, Khaled Z. Yahia, and Oday N. S. Jassim Abstract In this work, thermal evaporation system was

More information

GRAIN BOUNDARY RECOMBINATION PROCESSES AND CARRIER TRANSPORT IN POLYCRYSTALLINE SEMICONDUCTORS UNDER OPTICAL ILLUMINATION

GRAIN BOUNDARY RECOMBINATION PROCESSES AND CARRIER TRANSPORT IN POLYCRYSTALLINE SEMICONDUCTORS UNDER OPTICAL ILLUMINATION CHAPTER V GRAIN BOUNDARY RECOMBINATION PROCESSES AND CARRIER TRANSPORT IN POLYCRYSTALLINE SEMICONDUCTORS UNDER OPTICAL ILLUMINATION 5.1 INTRODUCTION P olycrystalline semiconductors are potential candidates

More information

Thin film solar cells

Thin film solar cells Thin film solar cells pn junction: a:si cells heterojunction cells: CIGS-based CdTe-based 1 Amorphous Si large concentration of defects N T >10 16 cm -3 ( dangling bonds D +, D -, D o ) passivation of

More information

Materials: Structures and Synthesis

Materials: Structures and Synthesis 微纳光电子材料与器件工艺原理 Materials: Structures and Synthesis Xing Sheng 盛兴 Department of Electronic Engineering Tsinghua University xingsheng@tsinghua.edu.cn 1 Optical and Electronic Devices LEDs lasers waveguides

More information

Ajay Kumar Gautam [VLSI TECHNOLOGY] VLSI Technology for 3RD Year ECE/EEE Uttarakhand Technical University

Ajay Kumar Gautam [VLSI TECHNOLOGY] VLSI Technology for 3RD Year ECE/EEE Uttarakhand Technical University 2014 Ajay Kumar Gautam [VLSI TECHNOLOGY] VLSI Technology for 3RD Year ECE/EEE Uttarakhand Technical University Page1 Syllabus UNIT 1 Introduction to VLSI Technology: Classification of ICs, Scale of integration,

More information

Laser Micromachining of Bulk Substrates and Thin Films Celine Bansal

Laser Micromachining of Bulk Substrates and Thin Films Celine Bansal Laser Micromachining of Bulk Substrates and Thin Films Celine Bansal Oxford Lasers Ltd Moorbrook Park Didcot, Oxfordshire, OX11 7HP Tel: +44 (0) 1235 810088 www.oxfordlasers.com Outline Oxford Lasers Importance

More information

Silver Diffusion Bonding and Layer Transfer of Lithium Niobate to Silicon

Silver Diffusion Bonding and Layer Transfer of Lithium Niobate to Silicon Chapter 5 Silver Diffusion Bonding and Layer Transfer of Lithium Niobate to Silicon 5.1 Introduction In this chapter, we discuss a method of metallic bonding between two deposited silver layers. A diffusion

More information

Most semiconductor devices contain at least one junction between p-type and n-type material. These p-n junctions are fundamental to the performance

Most semiconductor devices contain at least one junction between p-type and n-type material. These p-n junctions are fundamental to the performance Ch. 5: p-n Junction Most semiconductor devices contain at least one junction between p-type and n-type material. These p-n junctions are fundamental to the performance of functions such as rectification,

More information

HOMEWORK 4 and 5. March 15, Homework is due on Monday March 30, 2009 in Class. Answer the following questions from the Course Textbook:

HOMEWORK 4 and 5. March 15, Homework is due on Monday March 30, 2009 in Class. Answer the following questions from the Course Textbook: HOMEWORK 4 and 5 March 15, 2009 Homework is due on Monday March 30, 2009 in Class. Chapter 7 Answer the following questions from the Course Textbook: 7.2, 7.3, 7.4, 7.5, 7.6*, 7.7, 7.9*, 7.10*, 7.16, 7.17*,

More information

416 Solid State Physics ; Introduction & Overview

416 Solid State Physics ; Introduction & Overview 416 Solid State Physics 8-29-2016; Introduction & Overview Assignment: Read chapter 1 of Kittel for next time on crystal symmetries. This course covers concepts in solid state physics. Note that physics-related

More information

Nucleation and growth of nanostructures and films. Seongshik (Sean) Oh

Nucleation and growth of nanostructures and films. Seongshik (Sean) Oh Nucleation and growth of nanostructures and films Seongshik (Sean) Oh Outline Introduction and Overview 1. Thermodynamics and Kinetics of thin film growth 2. Defects in films 3. Amorphous, Polycrystalline

More information

Microelettronica. Planar Technology for Silicon Integrated Circuits Fabrication. 26/02/2017 A. Neviani - Microelettronica

Microelettronica. Planar Technology for Silicon Integrated Circuits Fabrication. 26/02/2017 A. Neviani - Microelettronica Microelettronica Planar Technology for Silicon Integrated Circuits Fabrication 26/02/2017 A. Neviani - Microelettronica Introduction Simplified crosssection of an nmosfet and a pmosfet Simplified crosssection

More information

Study on the hydrogenated ZnO-based thin film transistors

Study on the hydrogenated ZnO-based thin film transistors Final Report Study on the hydrogenated ZnO-based thin film transistors To Dr. Gregg Jessen Asian Office of Aerospace Research & Development April 30th, 2011 Jae-Hyung Jang School of Information and Communications

More information

Effect of grain size on the mobility and transfer characteristics of polysilicon thin-film transistors

Effect of grain size on the mobility and transfer characteristics of polysilicon thin-film transistors Indian Journal of Pure & Applied Physics Vol. 42, July 2004, pp 528-532 Effect of grain size on the mobility and transfer characteristics of polysilicon thin-film transistors Navneet Gupta* & B P Tyagi**

More information

Plasmonics using Metal Nanoparticles. Tammy K. Lee and Parama Pal ECE 580 Nano-Electro-Opto-Bio

Plasmonics using Metal Nanoparticles. Tammy K. Lee and Parama Pal ECE 580 Nano-Electro-Opto-Bio Plasmonics using Metal Nanoparticles Tammy K. Lee and Parama Pal ECE 580 Nano-Electro-Opto-Bio April 1, 2007 Motivation Why study plasmonics? Miniaturization of optics and photonics to subwavelength scales

More information

1. Aluminum alloys for direct contacts. 1.1 Advantages of aluminum alloys for direct contacts

1. Aluminum alloys for direct contacts. 1.1 Advantages of aluminum alloys for direct contacts Direct contacts between aluminum alloys and thin film transistors (TFTs) contact layers were studied. An Al-Ni alloy was found to be contacted directly with an indium tin oxide (ITO) layer successfully

More information

ECE440 Nanoelectronics. Lecture 08 Review of Solid State Physics

ECE440 Nanoelectronics. Lecture 08 Review of Solid State Physics ECE440 Nanoelectronics Lecture 08 Review of Solid State Physics A Brief review of Solid State Physics Crystal lattice, reciprocal lattice, symmetry Crystal directions and planes Energy bands, bandgap Direct

More information

SEMICONDUCTORS R. A. SMITH CAMBRIDGE AT THE UNIVERSITY PRESS. M.A., PH.D. Head of the Physics Department Royal Radar Establishment Malvern J 959

SEMICONDUCTORS R. A. SMITH CAMBRIDGE AT THE UNIVERSITY PRESS. M.A., PH.D. Head of the Physics Department Royal Radar Establishment Malvern J 959 SEMICONDUCTORS BY R. A. SMITH M.A., PH.D. Head of the Physics Department Royal Radar Establishment Malvern CAMBRIDGE AT THE UNIVERSITY PRESS J 959 CONTENTS Chapter 1. The Elementary Properties of Semiconductors

More information

Low temperature amorphous and nanocrystalline silicon thin film transistors. deposited by Hot-Wire CVD on glass substrate

Low temperature amorphous and nanocrystalline silicon thin film transistors. deposited by Hot-Wire CVD on glass substrate Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate M. Fonrodona 1, D. Soler 1, J. Escarré 1, F. Villar 1, J. Bertomeu 1 and J. Andreu

More information

Amorphous Materials Exam II 180 min Exam

Amorphous Materials Exam II 180 min Exam MIT3_071F14_ExamISolutio Name: Amorphous Materials Exam II 180 min Exam Problem 1 (30 Points) Problem 2 (24 Points) Problem 3 (28 Points) Problem 4 (28 Points) Total (110 Points) 1 Problem 1 Please briefly

More information

Figure 16.31: Two-dimensional representations of (a) a quartz crystal and (b) a quartz glass.

Figure 16.31: Two-dimensional representations of (a) a quartz crystal and (b) a quartz glass. Figure 16.31: Two-dimensional representations of (a) a quartz crystal and (b) a quartz glass. Figure 16.28: The p orbitals (a) perpendicular to the plane of th carbon ring system in graphite can combine

More information

Instructor: Dr. M. Razaghi. Silicon Oxidation

Instructor: Dr. M. Razaghi. Silicon Oxidation SILICON OXIDATION Silicon Oxidation Many different kinds of thin films are used to fabricate discrete devices and integrated circuits. Including: Thermal oxides Dielectric layers Polycrystalline silicon

More information

Device Simulation of Grain Boundaries in Lightly Doped Polysilicon Films and Analysis of Dependence on Defect Density

Device Simulation of Grain Boundaries in Lightly Doped Polysilicon Films and Analysis of Dependence on Defect Density Jpn. J. Appl. Phys. Vol. 40 (2001) pp. 49 53 Part 1, No. 1, January 2001 c 2001 The Japan Society of Applied Physics Device Simulation of Grain Boundaries in Lightly Doped Polysilicon Films and Analysis

More information

THIN FILM DEVICES for LARGE AREA ELECTRONICS

THIN FILM DEVICES for LARGE AREA ELECTRONICS Institute of Microelectronics Annual Report 2009 7 Project III. 3: THIN FILM DEVICES for LARGE AREA ELECTRONICS Project leader: Dr. D.N. Kouvatsos Collaborating researchers from other projects: Dr. D.

More information

Lab IV: Electrical Properties

Lab IV: Electrical Properties Lab IV: Electrical Properties Study Questions 1. How would the electrical conductivity of the following vary with temperature: (a) ionic solids; (b) semiconductors; (c) metals? Briefly explain your answer.

More information

light to electricity in p-n junctions

light to electricity in p-n junctions (-) (+) light e - Conducting back contact h + thin conducting transparent film n p light to electricity in p-n junctions + J - V + Dark Current - Photo Current Typical plots of current vs. applied potential

More information

Why does pyrite have a low photovoltage?

Why does pyrite have a low photovoltage? Why does pyrite have a low photovoltage? August 25, 2011 Hypothesis I: metallic phase impurities Pyrite always contains metallic FeS-type phase impurities, which somehow reduce the photovoltage Evidence

More information

Excitation and pressure effects on photoluminescence from silicon-based light emitting diode material

Excitation and pressure effects on photoluminescence from silicon-based light emitting diode material Excitation and pressure effects on photoluminescence from silicon-based light emitting diode material Y. Ishibashi 1,3, A. Nagata 1, T. Kobayashi 1 *, A.D. Prins 2, S. Sasahara 3, J. Nakahara 3, M.A. Lourenco

More information

0HE, United Kingdom. United Kingdom , Japan

0HE, United Kingdom. United Kingdom , Japan Tel. No.: 81-45-924-5357 Fax No.: 81-45-924-5339 e-mail: tkamiya@msl.titech.ac.jp Effects of Oxidation and Annealing Temperature on Grain Boundary Properties in Polycrystalline Silicon Probed Using Nanometre-Scale

More information

Development of High Voltage Silicon Carbide MOSFET Devices in KERI

Development of High Voltage Silicon Carbide MOSFET Devices in KERI Development of High Voltage Silicon Carbide MOSFET Devices in KERI 2014. 06. Kim, Sang Cheol (sckim@keri.re.kr) Power Semiconductor Device Research Center Korea Electrotechnology Research Institute Contents

More information

Factors Affecting QE and Dark Current in Alkali Cathodes. John Smedley Brookhaven National Laboratory

Factors Affecting QE and Dark Current in Alkali Cathodes. John Smedley Brookhaven National Laboratory Factors Affecting QE and Dark Current in Alkali Cathodes John Smedley Brookhaven National Laboratory Outline Desirable Photocathode Properties Low light detection Accelerator cathodes Factors Affecting

More information

An Improved Process for Fabricating High-Mobility Organic Molecular Crystal Field-Effect Transistors

An Improved Process for Fabricating High-Mobility Organic Molecular Crystal Field-Effect Transistors An Improved Process for Fabricating High-Mobility Organic Molecular Crystal Field-Effect Transistors A.P. Micolich a), L.L. Bell, and A.R. Hamilton School of Physics, University of New South Wales, Sydney

More information

ECSE 6300 IC Fabrication Laboratory Lecture 8 Metallization. Die Image

ECSE 6300 IC Fabrication Laboratory Lecture 8 Metallization. Die Image ECSE 6300 IC Fabrication Laboratory Lecture 8 Metallization Prof. Rensselaer Polytechnic Institute Troy, NY 12180 Office: CII-6229 Tel.: (518) 276-2909 e-mails: luj@rpi.edu http://www.ecse.rpi.edu/courses/s18/ecse

More information

Thermally-Enhanced Generation of Solar Fuels

Thermally-Enhanced Generation of Solar Fuels Thermally-Enhanced Generation of Solar Fuels Xiaofei Ye, Liming Zhang, Madhur Boloor, Nick Melosh, William Chueh Materials Science & Engineering, Precourt Institute for Energy Stanford University Fundamentals

More information

ON THE PHOTOMAGNETIC EFFECT IN CdTe THIN FILMS EVAPORATED ONTO UNHEATED SUBSTRATES

ON THE PHOTOMAGNETIC EFFECT IN CdTe THIN FILMS EVAPORATED ONTO UNHEATED SUBSTRATES Journal of Optoelectronics and Advanced Materials Vol. 7, No. 2, April 2005, p. 811-815 ON THE PHOTOMAGNETIC EFFECT IN CdTe THIN FILMS EVAPORATED ONTO UNHEATED SUBSTRATES G. G. Rusu *, M. Rusu, M. Caraman

More information