LANDOLT-BORNSTEIN. Zahlenwerte und Funktionen aus Naturwissenschaften und Technik. Neue Serie. Gesamtherausgabe: K.-H. Hellwege

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1 LANDOLT-BORNSTEIN Zahlenwerte und Funktionen aus Naturwissenschaften und Technik Neue Serie Gesamtherausgabe: K.-H. Hellwege Gruppe III: Kristall- und Festkörperphysik Band 17 Halbleiter Herausgeber: O. Madelung M. Schulz H. Weiss f Teilband a Physik der Elemente der IV. Gruppe und der III-V Verbindungen D. Bimberg R. Blachnik M. Cardona P. J. Dean Th. Grave G. Harbeke K. Hübner U. Kaufmann W. Kress O. Madelung W. von Münch U. Rössler J. Schneider M. Schulz M.S. Skolnick Herausgegeben von O. Madelung Springer-Verlag Berlin Heidelberg New York 1982

2 Table of contents Semiconductors Subvolume a: Physics of group IV elements and III-V Compounds (edited by O. MADELUNG) A Introduction 1 General remarks on the contents and the structure of subvolumes 17a- 17e 1 2 Semiconductor properties, their definition and methods for their determination Basic properties of semiconductors Band structure parameters Lattice parameters Carrier concentrations and mobilities Experimental methods useful for the determination of semiconductor properties Transport measurements Optical measurements Impurities and defects Shallow and deep states Bound excitons Local modes Properties of tetrahedrally bonded semiconductors Band structure Transport and optical properties Lattice parameters ff. 3 Frequently used symbols, abbreviations, conversion tables 26 B Physical data of semiconductors I 1 Elements of the IVth group and IV-IV Compounds Structure, chemical bond Normal pressure and high pressure phases of group IV elements Referencesforl.O Diamond (C) Electronic properties Impurities and defects Lattice properties Transport properties Optical properties Further properties References for Silicon (Si) Electronic properties Impurities and defects Lattice properties Transport properties Optical properties Further properties References for ff. 349, 351, , 352ff , 353ff ff. 356ff. 349, 359 ff., ff. 349, 369 ff. 373 ff. 386ff. 395, 397 ff.

3 Table of contents IX 1.3 Germanium (Ge) Electronic properties Impurities and defects Lattice properties Transport properties Optical properties Further properties References for Grey tin (a-sn) Electronic properties Impurities and defects Lattice properties Transport properties ,6 Optical and further properties References for Silicon carbide (SiC) Electronic properties Impurities and defects Lattice properties Transport properties Optical properties Further properties References for Si x Ge 1 _ x 142 References for III-V Compounds Structure, chemical bond Properties of high pressure phases of III-V Compounds References for Boron nitride (BN) A Cubic boron nitride A.l Electronic properties A.3 Lattice properties A.4 Transport properties A.5 Optical properties A.6 Further properties B Hexagonal boron nitride B.l Electronic properties B.3 Lattice properties B.5 Optical properties B.6 Further properties C Wurtzite-type boron nitride References for Boron phosphide (BP) Electronic properties Impurities and defects Lattice properties Transport properties Optical properties Further properties References for Boron arsenide (BAs) 156 References for

4 X Table of contents 2.4 Aluminum nitride (A1N) Electronic properties Lattice properties Transport properties Optical properties Further properties References for Aluminum phosphide (AIP) Electronic properties Impurities and defects Lattice properties Transport properties Optical properties Further properties References for Aluminum arsenide (AlAs) Electronic properties Impurities and defects Lattice properties Transport properties Optical properties Further properties References for Aluminum antimonide (AlSb) Electronic properties Impurities and defects Lattice properties Transport properties Optical properties Further properties References for Gallium nitride (GaN) Electronic properties Impurities and defects Lattice properties Transport properties Optical properties Further properties References for Gallium phosphide (GaP) Electronic properties Impurities and defects Lattice properties Transport properties Optical properties Further properties References for Gallium arsenide (GaAs) Electronic properties Impurities and defects Lattice properties Transport properties Optical properties Further properties References for , 462, 468 ff. 470 ff , 469 ff , 473 ff ff. 473 ff , 473, 476ff. 477 ff ff., 479, , 479 ff. 349, ff. 480 ff., 484 ff. 486 ff. 350, 387ff. 489 ff. 490 ff. 491 ff. 462,487ff.,490, ff 349 ff., 494 ff. 498 ff. 349, 504 ff. 506 ff. 389, 430, 486, 496 ff., 508 ff. 486, , 512ff. 518 ff. 349, 527 ff. 529ff. 389, 430, 486, 510, 514, 538ff. 389, 543

5 Table of Contents 2.11 Gallium antimonide (GaSb) Electronic properties Impurities and defects Lattice properties Transport properties Optical properties Further properties References for Indium nitride (InN) 278 References for Indium phosphide (In P) Electronic properties Impurities and defects Lattice properties Transport properties Optical properties Further properties References for Indium arsenide (InAs) Electronic properties Impurities and defects Lattice properties Transport properties Optical properties Further properties References for Indium antimonide (InSb) Electronic properties Impurities and defects Lattice properties Transport properties Optical properties Further properties References for Solid Solutions between III-V Compounds and with other semiconductors..333 References for , 546 ff. 548 ff. 349, 550ff. 551 ff. 486, 556ff. 398, 486, , , 559 ff. 561 ff. 349, 564ff. 565 ff. 510, ff. 349, 572 ff. XI 349, 510, 574ff. 575 ff. 540, 571, 573, 575, 581 ff. 398, , 584ff , 550, 588ff. 579, 590ff. 389, 540, 570, 583, 585, 587, 600ff. 398, 601 ff. 603 ff.