CURRENT SENSING RESISTOR KRL SERIES- Susumu Co. Ltd. Thin Film Innovator
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1 CURRENT SENSING RESISTOR KRL SERIES- Susumu Co. Ltd. Thin Film Innovator
2 OUTLINE -CURRENT SENSING RESISTOR KRL SERIES- 1 STRUCTURE 2 SEVERAL ADVANTAGES WITH COMPARISON DATA 3 APPLICATION MANUAL
3 STRUCTURE (3) (1) (1) (2) (6) (4) Metal plate attached to Alumina with epoxy sheet to protect resistive element 1. Substrate Alumina 96% 2. Resistive element Metal plate 3. Electrode Cu+ Ni+Sn 4. Protective coating Epoxy resin 5. Marking Epoxy resin (Black) 6. Adhesive Adhesive(Epoxy) * Thermal conductive and shock absorber 3
4 COMPARISON HEAT DISSIPATION Competition KRL
5 COMPARISON HEAT DISSIPATION The surface temperature when applying 3W Competition KRL3264E-R050-F a E = 0.95 a E = 0.95
6 0.00 W 0.25 W 0.50 W 0.75 W 1.00 W 1.25 W 1.50 W 1.75 W 2.00 W 2.25 W 2.50 W 2.75 W 3.00 W Susumu Co. Ltd. Thin Film Innovator COMPARISON HEAT DISSIPATION The surface temperature increasing comparison between KRL3264 and competition KRL KOA Surface of temperature is measured when mounting on the glass epoxy board. Our competition of resistor is increased 160% compared with our KRL series 50 0
7 SMALL TCR Conventional type Equivalent circuit TCR Big + TCR Small + TCR Big = TCR Big KRL Equivalent circuit TCR Small Sample TCR KRL9045-M-R mΩ 9.991mΩ 9.0ppm/ Competitor 9.461mΩ 9.942mΩ 508ppm/
8 Output voltage (mv) Susumu Co. Ltd. Thin Film Innovator SMALL POWER COEFFICIENT OF RESISTANCE KRL Series has a small PCR comparably and can detect current accurately in the whole current range KRL3216-M-R010 R value at room temp.: m Ohm TCR 21.0ppm/ Error at 1w current sensing: 0.52% Actual Ideal Applied current (A)
9 0.00 W 0.25 W 0.50 W 0.75 W 1.00 W 1.25 W 1.50 W 1.75 W 2.00 W 2.25 W 2.50 W 2.75 W 3.00 W Susumu Co. Ltd. Thin Film Innovator PCR COMPARISON Apply current and measure voltage. Voltage / Current = Resistance value 4.0% 3.0% 2.0% 1.0% STD KRL KOA C 0.0% -1.0% -2.0% Competition Resistive element of temperature becomes high and results in drifting resistance value based on its TCR. The diagram shows that the resistance drift can be confirmed over 3 % at 3W. KRL Resistive element of temperature stays low due to the good heat dissipation to the mounting board. And Its TCR is quite small, so the resistance drift rate can be confirmed within 1%.
10 ESL(pH) Susumu Co. Ltd. Thin Film Innovator LOW ESL (SERIES INDUCTANCE) ESL Charateristic(5~100mΩ) R091 R075 R061 R050 R022 R015 R025 R010 R005 R f(mhz) Inductance value and its distribution are small
11 インダクタンス (nh) Susumu Co. Ltd. Thin Film Innovator ESL COMPARISON (SERIES INDUCTANCE) インダクタンス値 Inductance value I n d u c t a n c e ( n H ) 7.0 nh 6.0 nh 5.0 nh 4.0 nh 3.0 nh 2.0 nh 1.0 nh 0.0 nh 0MHz 200MHz 400MHz 600MHz 800MHz 1000MHz Frequency MHz 周波数 (MHz) Com SLN2 KRL50110
12 LOW NOISE Control. Without KRL) 標準基板を挿入した時のパルス波形 Output: mV Pulse width: ns Rise time: ns Fall time: ns 測定結果出力電圧 (Vpp): mV パルス幅 : 1.011ns 立ち下がり時間 : 0.100ns 立ち上がり時間 : 0.116ns オシロスコープ各試料通過パルスジェネレータ 標準基板 図 2. 測定試料外観 With KRL KRL9045 実装基板を挿入した時のパルス波形 測定結果 Output: 出力電圧 (Vpp): mV パルス幅 : 1.011ns Pulse 立ち下がり時間 width: ns : 0.105ns 立ち上がり時間 : 0.185ns Rise time: ns Fall time: ns
13 SHEAR DEFORMATION/ STRESS CTE: Linear coefficient of thermal expansion CTE of alumina substrate: CTE of glass epoxy (RF4) substrates: The difference between the two: about 7ppm/ about 20ppm/ 13ppm/ The larger the size, the bigger the expansion, and the larger the stress. Example: 10mm (component length) x 20ppm / (CTE) = 0.2μm/ (expansion per 1 ) If the temperature difference is 100, the total expansion is 20μm 13
14 SHEAR DEFORMATION/STRESS (COMPETITION) Condition : min Room temp 3min min Room temp 3min Alumina substrate Lead free solder チップ抵抗器 ( アルミナ基板 ) 無鉛はんだガラスエポキシ基板 (FR4) Glass epoxy (FR4) board Ceramic Type Plate Type After 2000H, crack was confirmed.
15 SHEAR DEFORMATION/ STRESS Condition : min Room temp 3min min Room temp 3min Alumina substrate チップ抵抗器 ( アルミナ基板 ) Buffer( adhesive バッファ層 resin) ( 接着樹脂 ) 抵抗体 Resistive element 無鉛はんだ Lead free ガラスエポキシ基板 solder (FR4) Glass epoxy (FR4) board After 2000 cycles (Cross section) After 3000 cycles (Cross Section)
16 抵抗値変化 (%) Susumu Co. Ltd. Thin Film Innovator TEMPERATURE CYCLE TEST RESULT Condition : min Room temp 3min min Room temp 3min KRL11050 Temperature Cycle test KRL11050 温度サイクル試験 R e s i s t a n c e C h a n g e Average 平均 Min 最小値最大値 Max ( % ) Number of Cycle サイクル数 ( 回 ) 16
17 THERMAL ELECTROMOTIVE FORCE Thermal electromotive force could occur in the different metal material connection with the temperature difference between them. The chip resistor of the electrode is the layered structure. Sectional View Electrode: Cu+ Ni+Sn In case of the temperature difference in the circle, thermal electrode force could occur
18 熱起電力 (mv) Susumu Co. Ltd. Thin Film Innovator THERMAL ELECTROMOTIVE FORCE COMPARISON E M F ( m V ) BPR58-10mΩ C (KOA) KRL9045-C-R030 KRL9045-M-R Time 時間 (sec) (Sec) This is 各低抵抗器に the voltage waveform 4Wを3 as 分間印加し電源を soon as 4W applied OFF for each にした直後の電圧波形 resistors for 3 minutes and off
19 KRL SERIES LINE UP Electrode Part Number Power Resistance range size(inch) Short Wide Short Terminal KRL0816E- -**** W m - 100mohm (E-12) KRL1220E- -**** W 0805 KRL1632E- -**** W mohm mohm (E-12) 1206 KRL3264E- -**** W mohm 2512 KRL50110E- -**** W mohm (E-12) 4320 KRL2012E- -**** W 0805 KRL3216E- -**** W 1206 KRL6432E- -**** W mohm 2512 KRL7638E- -**** W mohm (E-12) 3015 KRL9045E- -**** W 3518 KRL11050E- -**** W 4320 : Working Temperature Range * : Resistance Value 4 digit : Resistance Tolerance : Packaging Wide Terminal Electric characteristics Resistance Range 5m-9mohm 10mohm 1mohm 2mohm 3mohm Tolerance +/-2.0%(G) '+/-1.0%(F) +/-5.0%(G) '+/-2.0%(G) '+/-1.0%(F)
20 APPLICATION EXAMPLE-1 High precision current sensing (Hi-side) 1 to 3 mω
21 APPLICATION EXAMPLE-2 Breaker
22 APPLICATION EXAMPLE-3 Monitor for speed control
23 APPLICATION EXAMPLE-4 Monitor for current
24 ADVANTAGE OF SUMMARY - Effective heat dissipation-high power rating - No hot spot, even heat distribution, no heat damage to component and PC boards - Low TCR - Low ESL low noise - Low thermal EMF - Small Power Coefficient of resistance - Temperature cycle resistance - Two terminal types with various standard sizes and resistance as low as 1m Ω
G 絶対最大定格 ( 指定のない限りT c = 25ºC) Parameter Symbol Conditions Limits Unit 尖頭逆方向電圧 V RM Duty V 直流逆方向電圧 V R 直流電圧印加時 30 V
RB531VM-30FH ショットキーバリアダイオード V R 30 V I o 100 ma I FSM 1 A 外形図 (AEC-Q101 準拠 ) Data sheet 特長高信頼性小型モールド超低 V F 内部回路図 用途 包装仕様 小電流整流用 包装形態 Embossed Tape リールサイズ (mm) 180 テープ幅 (mm) 8 構造基本発注単位 ( 個 ) 3000 エピタキシャルプレーナ型
シリコン MOS 形集積回路 /Silicon MOSFET type Integrated Circuit. 記号単位定格 /Ratings. B. 電気的特性 /Electrical characteristics 測定条件 /Measure condition (Tc=25 ±2 )
種別 /Type シリコン MOS 形集積回路 /Silicon MOSFET type Integrated Circuit 用途 /Application スイッチンク 電源制御用 /For a Switching Power Supply Control 構造 /Structure CMOS 形 /CMOS type 外形 /Out line DIP7-A1-B マ - ク記号 / マ - キンク
記号 / 定格 /Ratings. ドレイン電圧 1 DRAIN Voltage VD -0.3 ~ 700 V 下記パルス幅以内での 保証とする 2 VCC Voltage VCC -0.3 ~ 45 V (It is guaranteed within the pulse as below.
種別 /Type 用途 /Application 構造 /Structure シリコン MOS 形集積回路 /Silicon MOSFET type Integrated Circuit スイッチング電源制御用 /For Switching Power Supply Control CMOS 形 /CMOS type 等価回路 /Equivalent Circuit 添付図 /See Figure.7
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