VACUUM DEPOSITION GUIDE

Transcription

1 A A MATERIALS VACUUM DEPOSITION GUIDE Technical Guide about Thin Films Deposition... A 02 Vapor Pressures Table... A 27 MATERIALS / Inorganics & thin films guide A 01

2 MATERIALS VACUUM DEPOSITION GUIDE Technical Guide about Thin Films Deposition Technical Guide about Thin Films Deposition Key of s * Influenced by composition ** Cr-plated rod or strip *** All metals alumina coated Gr Q VC SS Int Ex Graphite Quartz Vitreous carbon Stainless steel Intermetallic Excellent G Good F Fair P Poor S Sublimes D Decomposes RF RF sputtering is effective RF-R Reactive RF sputter is effective DC DC sputtering is effective DC-R Reactive DC sputtering is effective Remark: Data have been obtained from reliable literature sources or scientists doing vacuum deposition work. Whilst great care has been taken to ensure that the information contained in this table is accurate, data should be used as a general guide and at your own risk. Do not hesitate to use a second source for very critical data or consult us. A 02 MATERIALS / Inorganics & thin films guide

3 MATERIALS / Inorganics & thin films guide A 03 Aluminum Al Ex Gr, Int Int, W, Al 2 W W Int RF, DC 0.93@0.6 Alloys and wets W. Stranded W is best. Slow sputtering. Aluminum Antimonide AlSb RF Aluminum Arsenide AlAs ~ RF - - Aluminum Bromide AlBr ~ Mo - - Gr RF - - Aluminum Carbide Al 4 C 3 ~ ~800 F RF 2.75@0.7 - Aluminum Fluoride AlF S P Gr Mo, W, Ta - - Gr RF 1.4@0.5 - Aluminum Nitride AlN > ~1750 F RF, RF-R - Aluminum Oxide Al Ex - W - W - RF-R 1.63@0.55 Reactive evap in 10-3 N 2 with glow discharge. Good electrical stability. Sapphire excellent in E-beam. Forms smooth, hard films. Aluminum Phosphide AlP RF - - Aluminum, 2% Copper Al2%Cu RF, DC - Aluminum, 2% Silicon Al2%Si G Gr, Int Int RF, DC - Aluminum-doped Zinc Oxide Wire feed and flash. Difficult from dual sources. Wire feed and flash. Difficult from dual sources. AZO Mo RF, DC - - MATERIALS VACUUM DEPOSITION GUIDE Technical Guide about Thin Films Deposition A

4 A 04 MATERIALS / Inorganics & thin films guide Antimony Sb 630 S P Gr, Al 2, BN Mo, Ta, Al 2, *** Mo, Ta Mo, Ta BN, C, Al 2 RF, DC 3.4@1 Antimony Oxide Sb S ~300 G Al 2, BN Pt - Pt BN, Al 2 RF-R 2.1@0.55 Antimony Selenide Sb 2 Se D Ta - - Gr RF 3.01@0.55 Toxic. Evaporates well. Film structure is rate dependent. Toxic. Decomposes on W. Use low rate. Stoichiometry variable. Toxic. Antimony Sulfide Sb 2 S ~200 G Al 2 Mo, Ta - Mo, Ta @0.55 Toxic. No decomposition. Antimony Telluride Sb 2 Te Gr RF - Arsenic As 817 S P Gr, VC, Al 2 Gr - - Al 2, VC - - Toxic. Decomposes over 750 C. Toxic. Sublimes rapidly at low temperature. Arsenic Oxide As Arsenic Selenide As 2 Se 3 ~ Q RF 3.03@0.82 Toxic. Arsenic Sulfide As 2 S ~400 F Mo Mo - - Q RF 2.69@0.56 Toxic. Arsenic Telluride As 2 Te Flash. Toxic. Barium Ba F - W, Ta, Mo W W Metals RF 0.9@0.57 Toxic. Wets without alloying from refractory metals. Reacts with ceramics. Evaporates easily. Barium Chloride BaCl ~ Ta, Mo RF 0.74@0.58 Preheat gently to outgas. Barium Fluoride BaF S ~700 G RF 1.3@0.55 Denstity rate dependent. Barium Oxide BaO ~1300 P Al 2 Pt - Pt Al 2 RF, RF-R 1.98@0.59 Decomposes slightly. Barium Sulfide BaS Mo RF 2.16@ MATERIALS VACUUM DEPOSITION GUIDE Technical Guide about Thin Films Deposition Barium Titanate BaTi - D RF 2.4@0.55 Gives Ba. Co-evap. from 2 sources or sputter.

5 MATERIALS / Inorganics & thin films guide A 05 Beryllium Be Ex Gr, VC W, Ta W W BeO, Gr, VC RF, DC 2.5@0.5 Wets W/Mo/Ta. Powder and oxides toxic. Evaporates easily. Beryllium Carbide Be 2 C >2100 D Beryllium Chloride BeCl ~ RF - Toxic. Beryllium Fluoride BeF S ~200 G @ Beryllium Oxide BeO G W - RF, RF-R 1.72@0.55 Bismuth Bi G VC, Al 2 W, Mo, Ta, Al 2 W W Al 2, VC DC, RF 2.61@0.8 Toxic powder. No decomposition from E-beam guns. Toxic vapor. High resistivity. No shorting of baskets. Bismuth Fluoride BiF S ~ RF 1.7@0.55 Toxic. Bismuth Oxide Bi ~1400 P - Pt - Pt - RF, RF-R 1.9@0.55 Toxic vapor. Bismuth Selenide Bi 2 Se D ~650 G Gr Gr, Q RF - Toxic. Co-evaporate from two sources or sputter. Bismuth Sulfide Bi 2 S D RF 1.5 Toxic. Bismuth Telluride Bi 2 Te D ~600 - Gr W, Mo - - Gr, Q RF - Bismuth Titanate Bi 2 Ti 2 O 7 - D RF - Toxic. Co-evaporate from two sources or sputter. Toxic. or co-evaporate from two sources in 10-2 Torr oxygen. MATERIALS VACUUM DEPOSITION GUIDE Technical Guide about Thin Films Deposition A

6 A 06 MATERIALS / Inorganics & thin films guide Boron B G - Gr - - Gr, VC RF - Boron Carbide B 4 C Ex RF - Boron Nitride BN ~3000 S ~1600 P RF, RF-R - Explodes with rapid cooling. Forms carbide with Gr. Boats must be heated. Similar to chromium. Films very adherent. quickly. Decomposes under sputtering; sensitive to thermic shocks. ing preferred. Boron Oxide B 2 ~ ~1400 G - Pt, Mo Boron Sulfide B 2 S Gr RF - - Cadmium Cd F Al 2 W, Mo, Ta - W, Mo, Ta Al 2, Q DC, RF 1.13@0.6 Bad for vacuum systems. Low sticking coefficient. Cadmium Antimonide Cd 3 Sb Cadmium Arsenide Cd 3 As Q RF - Toxic. Cadmium Bromide CdBr ~ Cadmium Chloride CdCl ~ Cadmium Fluoride CdF ~ RF 1.56@ Cadmium Iodide CdI ~ Cadmium Oxide CdO >1500 D ~ RF-R 2.49@0.67 Reactive RF (O 2 + Ar) or (O 2 + N 2 ). MATERIALS VACUUM DEPOSITION GUIDE Technical Guide about Thin Films Deposition Cadmium Selenide CdSe >1350 S G Al 2 Mo, Ta - - Al 2, Q RF 2.4@0.58 Toxic. Evaporates easily.

7 MATERIALS / Inorganics & thin films guide A 07 Cadmium Sulfide CdS 1750 S F Gr, Al 2 W, Mo, Ta - W Al 2, Q RF 2.5@0.55 Cadmium Telluride CdTe W, Mo, Ta W Ta, Mo - RF 2.6 Sticking coefficient affected by substrate temperature. Stoichiometry variable. Toxic. Stoichiometry depends on substrate temperature. Calcium Ca 839 S P Al 2 W W W Al 2, Q @0.58 Flammable. Corrodes in air. Calcium Fluoride CaF ~ W, Mo, Ta W, Mo, Ta W, Mo, Ta Q RF 1.4@0.55 Calcium Oxide CaO ~ ~ W, Mo - - ZrO 2 RF, RF-R 1.84@0.59 Rate control important. Preheat gently to outgas. Forms volatile oxides with tungsten and molybdenum. Calcium Silicate CaSi G Q RF - - Calcium Sulfide CaS - D Mo RF 2.14@ Calcium Titanate CaTi P RF 2.34@0.59 Disproportionates except in sputtering. Calcium Tungstate CaWO G - W RF 1.92@ Carbon C ~3652 S G RF 1.47 E-beam preferred. Arc evaporation. Poor film adhesion. Parylene C 8 H Vapor-depositableplastic. MATERIALS VACUUM DEPOSITION GUIDE Technical Guide about Thin Films Deposition A

8 A 08 MATERIALS / Inorganics & thin films guide Cerium Ce ~ G Al 2, VC W, Ta W W, Ta Al 2, VC DC, RF 1.91@0.59 Films oxide easily. Cerium Fluoride CeF ~900 G - W, Mo, Ta - Mo, Ta - RF 1.63@0.55 Preheat gently to outgas. Cerium (III) Oxide Ce F - W @0.58 Cerium (IV) Oxide CeO 2 ~2600 S G Gr W RF, RF-R 2.18@0.55 Alloys with source. Use tungsten boat. E-beam gun preferred. Very little decomposition. Use 250 C substrate temperature. Cesium Cs SS - - Q - - Flammable. Cesium Bromide CsBr ~ W RF - - Cesium Chloride CsCl ~ W RF - Hygroscopic. Cesium Fluoride CsF ~ W RF 1.5@ Cesium Hydroxide CsOH Pt Cesium Iodide CsI ~ W RF 1.99@ Chromium Cr 1857 S G Gr, VC ** W W VC RF, DC 3.28@0.7 Films very adherent. High rates possible. Chromium Boride CrB RF, DC - - Chromium Bromide CrBr RF - - Chromium Carbide Cr 3 C ~2000 F - W RF, DC - - Chromium Chloride CrCl Fe RF - Sublimes easily. Chromium Oxide Cr ~2000 G - W, Mo - W - RF, RF-R 2.55@0.59 Disproportionates to lower oxides; reoxidizes at 600 C in air. MATERIALS VACUUM DEPOSITION GUIDE Technical Guide about Thin Films Deposition Chromium Silicide Cr 3 Si RF, DC - - Chromium-Silicon Monoxide Cr-SiO - - * * * * G - W - W - DC, RF - Flash.

9 MATERIALS / Inorganics & thin films guide A 09 Cobalt Co Ex Al 2 W - W Al 2 DC, RF 2.17@0.62 Alloys with refractory metals. Cobalt Bromide CoBr S RF - - Cobalt Chloride CoCl S RF 1.51@ Cobalt Oxide CoO DC-R, RF-R - preferred. Copper Cu Ex Gr, Al 2, Mo, Ta Mo W W Al 2, Int DC, RF 0.17@0.8 Adhesion poor. Use interlayer (Cr). Evaporates using any source material. Copper Chloride CuCl ~ RF Copper Oxide Cu 2 O 1235 S ~600 G Al 2 Ta - - Al 2 DC-R, RF-R 2.71@0.59 Evaporate in 10-2 to 10 4 Copper Sulfide Cu 2 S Dysprosium Dy 1412 S G - Ta RF, DC - Flammable. Dysprosium Fluoride DyF S ~800 G - Ta RF 1.6@ Dysprosium Oxide Dy ~ Ir RF, RF-R 1.9@0.55 Loses oxygen. Erbium Er 1529 S G - W, Ta DC, RF - - Erbium Fluoride ErF ~ RF 1.5@ Erbium Oxide Er 2 Infus ~ Ir RF, RF-R 1.9@0.55 Loses oxygen. of O 2. MATERIALS VACUUM DEPOSITION GUIDE Technical Guide about Thin Films Deposition A

10 A 10 MATERIALS / Inorganics & thin films guide Europium Eu F Al 2 W, Ta - - Al 2 RF, DC - Flammable. Low tantalum solubility. Europium Fluoride EuF ~ Mo RF - - Europium Oxide Eu ~1600 G W Ir, Ta, W - - ThO 2 RF, RF-R 1.9@0.55 Loses oxygen. Films clear and hard. Europium Sulfide EuS G RF - - Gadolinium Gd Ex Al 2 Ta - - Al 2 RF, DC - Gadolinium Carbide GdC Gr RF - Flammable. High tantalum solubility. Decomposes under sputtering. Gadolinium Oxide Gd F - Ir RF, RF-R 1.8@0.55 Loses oxygen. Gallium Ga G Gr, VC, Al Al 2, Q - - Alloys with refractory metals. Use E-beam gun. Attack crucibles above 1000 C. Gallium Antimonide GaSb F - W, Ta RF 3.8@2.2 Flash evaporate. Gallium Arsenide GaAs G Gr W, Ta - - Gr RF 3.34@0.78 Flash evaporate. Gallium Nitride GaN 800 S ~ Al 2 RF, RF-R - Evaporates gallium in 10-3 Torr nitrogen. Gallium Oxide Ga Pr, W RF - Loses oxygen. Gallium Phosphide GaP W, Ta - W Q RF 3@2.15 Does not decompose. Rate control important. MATERIALS VACUUM DEPOSITION GUIDE Technical Guide about Thin Films Deposition

11 MATERIALS / Inorganics & thin films guide A 11 Germanium Ge Ex Gr, Al 2 W, Gr, Ta - - Q, Al 2 DC, RF 4@2 Excellent films from E-beam guns. Wets W, Ta and Mo. Germanium Nitride Ge 3 N S ~ RF-R - ing preferred. Germanium (II) Oxide GeO Q RF - - Germanium (III) Oxide GeO ~625 G VC, Al 2 Ta, Mo - W, Mo Q, Al 2 RF-R 1.61@0.59 Similar to SiO; film predominantly GeO. Germanium Telluride GeTe W, Mo - W Q, Al 2 RF - - Glass, Schott Ex RF 1.47 Gold Au Ex Gr, VC, Al 2, BN W W W,*** Mo,*** Al 2, BN, VC DC, RF 0.2@0.6 Evaporable alkali glass. Melt in air before evaporating. Films soft, not very adherent. Wets W and Mo. ing preferred. Hafnium Hf G Mo DC, RF - - Hafnium Boride HfB DC, RF - - Hafnium Carbide HfC ~3890 S ~ DC, RF - - Hafnium Nitride HfN RF, RF-R - - Hafnium Oxide HfO ~2500 F Mo W DC, RF, RF-R 1.9@0.55 Hafnium Silicide HfSi RF - - Film HfO. MATERIALS VACUUM DEPOSITION GUIDE Technical Guide about Thin Films Deposition A

12 A 12 MATERIALS / Inorganics & thin films guide Holmium Ho 1474 S G - W, Ta W W Holmium Fluoride HoF ~ Q DC, RF 1.6@ Holmium Oxide Ho Ir RF, RF-R 1.9@0.55 Loses oxygen. Indium In Ex Gr, Al 2, Mo W, Mo - W Gr, Al 2 DC, RF 1.38@0.71 Wets tungsten and copper. Indium Antimonide InSb 535 D W RF 1@0.55 Indium Arsenide InAs 943 D W RF 4.5@1 Toxic. preferred or co-evaporate on heated substrat 900 C. Flash. Toxic. ing preferred or co-evap from 2 sources. Flash. Indium Nitride InN RF - - Indium (I) Oxide In 2 O ~600 S RF - Indium (III) Oxide In ~1200 G Al 2 W, Pt - - Al 2-2@0.55 Indium Phosphide InP W, Ta - W, Ta Gr RF 3@2 Indium Selenide In 2 Se RF - Decomposes under sputtering. Film In 2 O. Transparent conductor. Deposits are phosphorus rich. Flash evaporate. ing preferred; or co-evaporate from two sources; flash. Indium (I) Sulfide In 2 S Gr RF 2 - Indium (II) Sulfide InS 692 S Gr RF - - Indium (III) Sulfide In 2 S S Gr RF - Film In 2 S. Indium (II) Telluride InTe MATERIALS VACUUM DEPOSITION GUIDE Technical Guide about Thin Films Deposition

13 MATERIALS / Inorganics & thin films guide A 13 Indium (III) Telluride In 2 Te RF - Indium Tin Oxide (ITO) ing preferred; or co-evaporate from two sources; flash. In 2 - SnO S Ex Mo Loses oxygen. Iridium Ir F W W DC, RF - - Iron Fe Ex VC, Al 2 W W W Al 2 DC, RF 2@0.58 Attacks tungsten. Films hard, smooth. Preheat gently to outgas. Iron Bromide FeBr RF - - Iron Chloride FeCl S RF 1.57@ Iron Iodide FeI RF - - Iron (II) Oxide FeO 1369 D P RF, RF-R 2.32@0.59 ing preferred. Iron (III) Oxide Fe G - W - W - - 3@0.55 Disproportionates to Fe 3 O 4 at 1530 C. Iron Sulfide FeS 1193 D Al 2 RF - - Kanthal FeCrAl W W - - DC, RF 1.74@ Lanthanum La Ex Al 2 W, Ta - - Al 2 RF - Films will burn in air if scraped. Lanthanum Boride LaB G RF - Toxic. Lanthanum Bromide LaBr Ta - RF - Hygroscopic. Lanthanum Fluoride LaF S ~ G - Ta, Mo - Ta - RF 1.6@0.55 No decomposition. Heat substrate over 300 C. Lanthanum Oxide La G - W, Ta RF 1.9@0.55 Loses oxygen. MATERIALS VACUUM DEPOSITION GUIDE Technical Guide about Thin Films Deposition A

14 A 14 MATERIALS / Inorganics & thin films guide Lead Pb Ex Gr, Al 2 W, Mo W W, Ta Al 2, Q DC, RF 1.51@0.8 Toxic. Lead Bromide PbBr ~ Toxic. Lead Chloride PbCl ~ Pt - - Al 2 RF 2.3@0.55 Toxic. Little decomposition. Lead Fluoride PbF S ~ W, Pt, Mo - - Al 2 RF 1.75@0.55 Toxic. Lithium Li G Al 2 Ta, SS - - Al Metal reacts quickly in air. Lithium Bromide LiBr ~ Ni RF 1.78@ Lithium Iodide LiI Mo, W RF 1.96@ Lithium Oxide Li 2 O > Pt, Ir RF 1.64@ Lutetium Lu 1663 S Ex Al 2 Ta - - Al 2 RF, DC - - Lutetium Oxide Lu 2 - D Ir RF 1.9@ Magnesium Mg 649 S G VC, Al 2 W, Mo, Ta W W Al 2, VC DC, RF 0.52@0.4 Flammable. Extremely high rates possible. ing possible but enough slow. Magnesium Aluminate MgAl 2 O G RF - Natural spinel. Magnesium Bromide MgBr D ~ Ni RF - - Magnesium Chloride MgCl D Ni RF Magnesium Fluoride MgF Ex Al 2, Mo Al 2 RF 1.38@0.55 Rate control and substrate heat important for optical films. Reacts with tungsten. Excellent with molybdenum. MATERIALS VACUUM DEPOSITION GUIDE Technical Guide about Thin Films Deposition Magnesium Iodide MgI 2 < Pr RF - -

15 MATERIALS / Inorganics & thin films guide A 15 Magnesium Oxide MgO G Al Gr, Al 2 RF, RF-R 1.7@0.55 Manganese Mn 1244 S G Al 2 W, Ta, Mo W W Al 2 DC, RF 2.59@0.59 Evaporates in 10-3 Torr oxygen for stoichiometry. Tungsten gives volatile oxides. Flammable. Wets refractair metals. Manganese Bromide MnBr RF - - Manganese Chloride MnCl RF - - Manganese (III) Oxide Mn Manganese (IV) Oxide MnO P - W - W - RF-R - Loses oxygen at 535 C. Manganese Sulfide MnS - D Mo RF Mercury Hg Toxic. Mercury Sulfide HgS Al 2 RF - Toxic. Molybdenum Mo Ex Gr DC, RF 3.65@0.59 Films smooth, hard. Careful degas required. Molybdenum Boride MoB P RF, DC - - Molybdenum Carbide Mo 2 C F RF, DC - Evaporation of Mo(CO) 6 yields Mo 2 C. Molybdenum Disulfide MoS ~ RF - - Molybdenum Oxide Mo ~900 - Al 2, Mo Mo, Pt - Mo Al 2, BN RF 1.9@0.55 Slight oxygen loss. Molybdenum Silicide MoSi D W RF 1.9 Slight O 2 loss. MATERIALS VACUUM DEPOSITION GUIDE Technical Guide about Thin Films Deposition A

16 A 16 MATERIALS / Inorganics & thin films guide Neodymium Nd Ex Al 2 Ta - - Al 2 DC, RF 0.3@0.88 Flammable. Low tantalum solubility. Neodymium Fluoride NdF ~900 G Al 2 Mo, W - Mo, Ta Al 2 RF 1.61@0.55 Very little decomposition. Neodymium Oxide Nd 2 ~ ~1400 G W Ta, W - - W RF, RF-R 2@0.55 Nickel Ni Ex VC, Al 2 W W W Al 2, VC DC, RF 2.37@0.81 Loses oxygen. Films clear. E-beam preferred. Hygroscopic. N varies with substrate temperature. Alloys with refractory metals. Forms smooth adherent films. Nickel Bromide NiBr S RF - - Nickel Chloride NiCl S RF - - Nickel Oxide NiO ~ Al Al 2 RF-R 2.18@0.48 Dissociates on heating. Inconel Ni/Cr/Fe G - W W W - DC, RF - Nichrome IV Ni/Cr Ex Gr, VC, Al 2 *** W W, Ta Al 2, VC DC, RF 3.74@8.8 Permalloy Ni/Fe G VC, Al 2 W - - Al 2, VC DC, RF - Supermalloy Ni/Fe/Mo G RF, DC - Use fine wire wrapped on tungsten. Low rate required for smooth films. Alloys with refractory metals. Film low in nickel. Use 84% Ni source. ing preferred; or co-evaporate from two sources, permalloy and molybdenum. MATERIALS VACUUM DEPOSITION GUIDE Technical Guide about Thin Films Deposition

17 MATERIALS / Inorganics & thin films guide A 17 Niobium Nb Ex - W DC, RF 1.8@0.58 Attacks tungsten source. Niobium Boride NbB RF, DC - - Niobium Carbide NbC F RF, DC - - Niobium Nitride NbN RF, RF-R - s reactive or evaporates niobium in 10-3 Torr nitrogen. Niobium (II) Oxide NbO Pt RF - - Niobium (III) Oxide Nb W - W - RF, RF-R - - Niobium (V) Oxide Nb 2 O W - W - RF, RF-R 2.3@ Niobium Stannide Nb 3 Sn Ex RF, DC - Co-evaporate from two sources. Niobium Telluride NbTe x RF - Composition variable. Osmium Os F DC, RF - Toxic. Osmium Oxide Os 2 - D Palladium Pd 1554 S Ex Gr, Al 2 W W W Al 2 DC, RF 2.3@0.54 Deposits osmium in 10-3 Torr oxygen. Alloys with refractory metals. Rapid evaporation suggested. Spits in E-beam. Palladium Oxide PdO 870 D Al Al 2 RF-R - - Phosphorus P Al Phosphorus Nitride P 3 N RF, RF-R - - reacts violently in air. MATERIALS VACUUM DEPOSITION GUIDE Technical Guide about Thin Films Deposition A

18 A 18 MATERIALS / Inorganics & thin films guide Platinum Pt Ex Gr, W W W, Pt W Gr, W DC, RF 3.42@1.0 Alloys with metals. Films soft, poor adhesion. E-beam required. Platinum Oxide PtO RF-R - - Plutonium Pu W DC, RF - Toxic, radioactive. Polonium Po Q - - Radioactive. Potassium K Mo - - Q @0.25 Metal reacts rapidly in air. Preheat gently to outgas. Potassium Bromide KBr ~ Ta, Mo - - Q RF 1.56@0.48 Preheat gently to outgas. Potassium Chloride KCl F - Ta, Ni RF 1.72@0.2 Preheat gently to outgas. Potassium Fluoride KF ~500 P Q RF 1.35@1.4 Preheat gently to outgas. Potassium Hydroxide KOH ~ Pt Preheat gently to outgas. Hygroscopic. Potassium Iodide KI ~ Ta RF 1.92@0.27 Preheat gently to outgas. Praseodymium Pr F - Ta RF, DC - Flammable. Praseodymium Oxide Pr G W Ir - - W RF, RF-R 2@0.55 Loses oxygen. Radium Ra Rhenium Re G DC, RF 3.18@0.59 Fine wire will self-evaporate. MATERIALS VACUUM DEPOSITION GUIDE Technical Guide about Thin Films Deposition Rhenium Oxide Re - - ~ RF - Evaporate rhenium in 10-3 Torr.

19 MATERIALS / Inorganics & thin films guide A 19 Rhodium Rh G VC, W W W W W, VC DC, RF 2.03@0.8 E-beam gun preferred. Rubidium Rb Q DC, RF 1.03@ Rubidium Chloride RbCl ~ Q RF Rubidium Iodide RbI ~ Q RF 1.68@ Ruthenium Ru P - W DC, RF - Spit violently in E-beam. Require long degas. Samarium Sm G Al 2 Ta - - Al 2 RF, DC - - Samarium Oxide Sm G W Ir - - W RF, RF-R 1.9@0.55 Loses oxygen. Films smooth, clear. Samarium Sulfide Sm 2 S G Scandium Sc 1541 S Ex Al 2 W - - Al 2 RF - Flammabble. Alloys with tantalum. Scandium Oxide Sc ~400 F RF, RF-R 1.89@0.55 Loses oxygen. Selenium Se G Silicon Si G VC, Ta W, Ta, Mo - - Gr, VC, Al 2 W, Mo W, Mo W, Mo Al 2, VC RF, DC 2.78 BeO, Ta, VC DC, RF 4.06@0.8 Toxic. Bad for vacuum systems. Wets all sources. Alloys with tungsten; use heavy tungsten boat. SiO produced above Torr. E-beam preferred. Silicon Boride SiB P RF - - Silicon Carbide SiC ~ RF 2.7@0.55 ing preferred. MATERIALS VACUUM DEPOSITION GUIDE Technical Guide about Thin Films Deposition A

20 A 20 MATERIALS / Inorganics & thin films guide Silicon Nitride Si 3 N S ~ RF, RF-R 2@ Silicon (II) Oxide SiO >1702 S G Gr, Ta Ta W W Ta RF, RF-R 1.9@2 Silicon (IV) Oxide SiO ~2.65 * * 1025* Ex Gr, Al 2, Mo For resistance evaporation, use baffle box and low rate. E-beam preferred Al 2 RF 1.46@0.55 Quartz excellent in E-beam. Silicon Selenide SiSe Q RF - Toxic. Silicon Sulfide SiS 940 S Q RF - - Silicon Telluride SiTe Q RF - Toxic. Silver Ag Ex Gr, VC, Al 2, Mo W Mo Ta, Mo Al 2 DC, RF 0.06@0.6 Evaporates well from any source. Silver Bromide AgBr ~ Ta - - Q RF 2.28@ Silver Chloride AgCl ~ Mo, Pt - Mo Q RF 2.13@ Silver Iodide AgI ~ Ta RF 2.02@ Sodium Na Ta, SS - - Q @0.59 Preheat gently to outgas. Metal reacts quickly in air. Sodium Bromide NaBr ~ Q RF 1.64@0.59 Preheat gently to outgas. Sodium Chloride NaCl F - Ta, W, Mo - - Q RF 1.79@0.2 Sodium Cyanide NaCN ~ Ag RF 1.45@0.59 Sodium Fluoride NaF ~1000 F - Mo, Ta, W - - RF 1.3@0.55 Copper oven. Little decomposition. Preheat gently to outgas. Hygrocsopic. Toxic. Preheat gently to outgas. Preheat gently to outgas. No decomposition. Sodium Hydroxide NaOH ~ Pt Preheat gently to outgas. Chiolote Na 5 Al 3 F ~ Mo, W RF - - Cryolite Na 3 AlF Ex Gr, VC W, Mo, Ta - W, Mo, Ta VC RF 1.35@0.55 Large chunks reduce spitting. Little decomposition. MATERIALS VACUUM DEPOSITION GUIDE Technical Guide about Thin Films Deposition

21 MATERIALS / Inorganics & thin films guide A 21 Strontium Sr F VC W, Ta, Mo W W VC RF, DC 0.61@0.58 Toxic. Wets but does not alloy with refractory metals. May react in air. Strontium Chloride SrCl Strontium Fluoride SrF ~ Al 2 RF 1.44@ Strontium Oxide SrO 2430 S Mo - - Al 2 RF 1.88@0.58 Reacts with molybdenum and tungsten. Strontium Sulfide SrS >2000 D Mo RF 2.11@ Sulfur S P - W - W Q - - Toxic. Bad for vacuum systems. Tantalum Ta Ex Gr DC, RF 2.05@0.58 Forms good films. Traps O 2. ing preferred. Tantalum Boride TaB RF, DC - - Tantalum Carbide TaC ~ RF, DC - - Tantalum Nitride TaN RF, RF-R, DC Tantalum Pentoxide Ta 2 O G VC Ta W W VC RF, RF-R 2.1@ Evaporates tantalum in 10-3 Torr nitrogen. Slight decomposition. Evaporates in 10-3 Torr oxygen. Films with high dielectric constant. Tantalum Sulfide TaS 2 > RF - - Technetium Tc MATERIALS VACUUM DEPOSITION GUIDE Technical Guide about Thin Films Deposition A

22 A 22 MATERIALS / Inorganics & thin films guide Teflon PTFE W RF - Tellurium Te P Gr, VC, Al 2 W W W, Ta Al 2, Q RF 4.7@0.55 Baffled source. Film structure doubtful. Toxic. Wets refractory metals without alloying. Terbium Tb Ex Al 2 Ta - - Al 2 RF - - Terbium Fluoride TbF ~ RF - - Thorium Th 1875 S Ex - W, Ta, Mo W W Toxic, radioactive. Wets W. Thorium Bromide ThBr S Mo Radioactive. Toxic. Thorium Carbide ThC ~ C RF, DC - Radioactive. Thorium Fluoride ThF 4 > ~750 F VC Ni - W VC RF 1.52@0.5 Radioactive. Heat substrate to above 150 C. Thorium Oxide ThO ~2100 G - W RF, RF-R 1.8@0.55 Radioactive. Thorium Oxyfluoride ThOF Mo, Ta Thorium Sulfide ThS RF - Radioactive.Films often ThF 4. Radioactive. ing preferred or co-evaporate from two sources. Thulium Tm 1545 S G Al 2 Ta - - Al 2 DC - - Thulium Oxide Tm 2 - D Ir RF - - MATERIALS VACUUM DEPOSITION GUIDE Technical Guide about Thin Films Deposition

23 MATERIALS / Inorganics & thin films guide A 23 Tin Sn Ex Gr, Al 2 Mo W W Al 2 DC, RF 1.48@0.59 Wets molybdenum. Tin Oxide SnO S ~1000 Ex Al 2 W W W Q, Al 2 RF, RF-R 2.08@0.58 Films from tungsten are oxygen deficient, oxidize in air. Tin Selenide SnSe ~400 F Q RF - - Tin Sulfide SnS ~ Q RF - - Tin Telluride SnTe 780 D ~ Q RF - - Titanium Ti Ex Gr Ta - - TiC, VC DC, RF 2.64@0.58 Alloys with refractory metals; evolves gas on first heating. Titanium Boride TiB P RF, DC - - Titanium Carbide TiC ~ RF, DC - - Titanium Nitride TiN G - Mo RF, RF-R, DC Titanium (II) Oxide TiO ~1500 G Gr, VC W, Ta - - VC RF 2.4@ ing preferred. Decomposes with thermal evaporation. Film TiO 2 if evaporated like TiO 2. Preheat gently to outgas. Titanium (III) Oxide Ti D G - W RF 2.3@0.5 - Titanium (IV) Oxide TiO ~1300 F Mo W - W - RF, RF-R 2.3@0.5 Suboxide, must be reoxidized to rutile. Tantalum reduces TiO 2 to TiO and titanium. MATERIALS VACUUM DEPOSITION GUIDE Technical Guide about Thin Films Deposition A

24 A 24 MATERIALS / Inorganics & thin films guide Tungsten W G RF, DC 2.76@0.58 Forms volatile oxides. Films hard and adherent. Tungsten Boride WB 2 ~ P RF - - Tungsten Carbide WC RF, DC - - Tungsten Carbide W 2 C Ex - C RF, DC - - Tungsten Disulfide WS D RF - - Tungsten Oxide W 1473 S G - W, Pt RF-R 1.7@0.55 Preheat gently to outgas. Tungsten reduces oxide slightly. Tungsten Selenide WSe RF - - Tungsten Silicide WSi 2 > RF, DC - - Tungsten Telluride WTe Q RF - - Uranium U G - Mo, W W W Films oxidize. Radioactive. Uranium Carbide UC D C RF - - Uranium Fluoride UF Ni RF - - Uranium (III) Oxide U D W - W - RF-R - Uranium (IV) Oxide UO W - W - RF - Disproportionates at 1300 C to UO 2. Uranium Phosphide UP 2 - D Ta RF - - Uranium (II) Sulfide US > Tantalum causes decomposition. Uranium (IV) Sulfide US 2 > W RF - Slight decomposition. MATERIALS VACUUM DEPOSITION GUIDE Technical Guide about Thin Films Deposition

25 MATERIALS / Inorganics & thin films guide A 25 Vanadium V Ex - Mo DC, RF 3.03@0.58 Wets molybdenum. E-beam-evaporated films preferred. Alloy slightly with W. Vanadium Boride VB RF, DC - - Vanadium Carbide VC ~ RF, DC - - Vanadium Nitride VN RF, RF-R, DC - - Vanadium (IV) Oxide VO S ~ RF, RF-R 2.51@0.63 ing preferred. Vanadium (V) Oxide V 2 O ~ Q RF - - Vanadium Silicide VSi RF - - Ytterbium Yb G - Ta DC, RF - - Ytterbium Fluoride YbF ~ Mo RF 1.5@ Ytterbium Oxide Yb S ~ Ir RF, RF-R 1.9@0.55 Loses oxygen. Yttrium Y Ex Al 2 W, Ta - W Al 2 RF, DC - High tantalum solubility. Yttrium Aluminum Oxide Y 3 Al 5 O G - - W - - RF - Films not ferroelectric. Yttrium Fluoride YF RF 1.5@ Yttrium Oxide Y ~2000 G Gr W - - Gr RF, RF-R 1.79@0.589 Loses oxygen, films smooth and clear. MATERIALS VACUUM DEPOSITION GUIDE Technical Guide about Thin Films Deposition A

26 A 26 MATERIALS / Inorganics & thin films guide Zinc Zn Ex Al 2 Mo, W, Ta W W Al 2, Q DC, RF 1.93@0.589 Evaporates well under wide range of conditions. Bad for vacuum systems. Wets refractory metals. Zinc Antimonide Zn 3 Sb RF - - Zinc Bromide ZnBr D ~300 - W C RF 1.58@ Zinc Fluoride ZnF ~ Pt, Ta - - Q RF - - Zinc Nitride Zn 3 N 2 - D Mo RF - - Zinc Oxide ZnO ~1800 F RF-R 2@0.55 Zinc Selenide ZnSe > Ta, W, Mo W,Mo W Q RF 2.6@0.55 Zinc Sulfide ZnS 1700 S ~800 G - Ta, Mo - - Q RF 2.3@0.55 Zinc Telluride ZnTe ~ Mo, Ta RF 3.56@0.59 Zirconium Zr Ex Mo W RF, DC - Anneal in air at 450 C to re oxidize. Toxic. Preheat gently to outgas. Evaporates well. Preheat gently to outgas. Films partially decompose. Sticking coefficient varies with substrate temperature. Toxic. Preheat gently to outgas. Flammable. Alloys with tungsten. Films oxidize readily. Zirconium Boride ZrB 2 ~ G RF, DC - - Zirconium Carbide ZrC ~ RF, DC - - Zirconium Nitride ZrN RF, RF-R, DC Zirconium Oxide ZrO 2 ~ ~2200 G Mo W RF, RF-R 2.05@0.5 - Reactively evaporates in 10-3 Torr nitrogen. Films oxygen deficient, clear and hard. Zirconium Silicate ZrSiO RF 1.96@ Zirconium Silicide ZrSi RF, DC - MATERIALS VACUUM DEPOSITION GUIDE Technical Guide about Thin Films Deposition

27 MATERIALS VACUUM DEPOSITION GUIDE Vapor Pressures Table A Vapor Pressures Table Table of temperatures at which vapor pressures (mbar) are: Element Actinium Silver Aluminum Americium Arsenic Astatine Gold Boron Barium Beryllium Bismuth Carbone Calcium Cadmium Cerium Cobalt Chromium Cesium Copper Dysprosium Erbium Europium Francium Iron Gallium Gadolinium Germanium Hafnium MATERIALS / Inorganics & thin films guide A 27

28 Element Mercury Holmium Indium Iridium Potassium Lanthanum Lithium Lutetium Magnesium Manganese Molybdenum Sodium Niobium Neodymium Nickel Osmium Phosphore Lead Palladium Polonium Praseodymium Platinum Plutonium Radium Rubidium Rhenium Rhodium Ruthenium Sulfur Antimony Scandium Selenium Silicon Samarium Tin Strontium Tantalum Terbium Technetium Tellurium Thorium Titanium Thallium Thulium Uranium Vanadium Tungstene Yttrium Ytterbium Zinc Zirconium

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