Time Title Speaker. 7:30 Registration. 8:00-8:10 Introduction and US Perspective Dr. Gregg Jessen (AFRL)
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1 Basic Research Innovation and Collaboration Center (BRICC) 4075 Wilson Blvd., Suite 350 Liberty Room Arlington, VA Agenda Day 1 December 12, 2016 Time Title Speaker 7:30 Registration 8:00-8:10 Introduction and US Perspective Dr. Gregg Jessen (AFRL) 8:10-8:20 Ga2O3 Fundamental Science Perspective Dr. Ali Sayir (AFOSR) 8:20-8:40 8:40-9:00 9:00-10:00 The Rise of Ga2O3 for a New Era of Power Electronics Growth of Homoepitaxial β-ga2o3 Layers by MOVPE for Power Electronics Applications Epitaxy and Opportunities Afforded by Native Substrate Availability Dr. Masataka Higashiwaki (NICT Japan); Dr. Michele Baldini (IKZ Germany) Discussion Lead Prof. Jim Speck (UCSB): < 15 min + 45 min open discussion 10:00-10:10 BREAK 10:10-11:10 Electronic Transport and Devices Discussion Lead Prof. Debdeep Jena (Cornell): < 15 min + 45 min open discussion 11:10-12:25 LUNCH ON YOUR OWN 12:25-13:25 Materials Characterization and Challenges 13:25-14:15 Modeling and Simulation Discussion Lead Dr. Steve Ringel (OSD): <15 min +40 min open discussion Discussion Leads Dr. Stefan Badescu (AFRL) and Dr. Eric Heller (AFRL): 10 min atomistic + 10 min device sim + 30 min open 14:15-14:15 BREAK 14:25-15:05 Commercial Materials and Reactor Development Open forum for providers of Bulk Substrates, Epitaxial Materials, Reactors with opening remarks by Dr. Akito Kuramata (NCT Japan) 15:05-15:35 Applications Industry Application Discussion 15:35-17:00 Summary and Identification of Knowledge Gaps Group Activity 1 P a g e
2 17:00 MEETING ADJOURN FOR THE DAY 17:45-19:45 Social: The Front Page 4201 Wilson Blvd., Arlington, VA P a g e
3 Introduction Technical Discussion Topics Day 1 December 12, 2016 Topic Ga2O3 Fundamental Science Perspective Overview The Rise of Ga2O3 for a New Era of Power Electronics Growth of Homoepitaxial β-ga2o3 Layers by MOVPE for Power Electronics Applications Speaker/Organization G. Jessen, AFRL A. Sayir, AFOSR M. Higashiwaki, NICT M. Baldini, IKZ Epitaxy and Opportunities Afforded by Native Substrate Availability Ga2O3 Materials Synthesis by MBE Non-polar GaN Epitaxy on (010) Ga2O3 Synthesis and Characterization of LPCVD beta-ga2o3 Films CZ Growth of beta-ga2o3 Gallium Oxide Electronic Devices Electronic Transport and Devices High-Voltage E-mode and High-Current D-mode FETs Transport and Doping in Ga2O3 Transistors Electronic Transport Characterization of beta-ga2o3 Record Drain Currents on GOOI D/E-modes FETs Ga2O3 Schottky diodes on MBE and HVPE epi Ga2O3/Dielectric Interface Characterization and Transport in Ga2O3 Ga2O3 Materials Characterization Materials Characterization and Challenges Characterization of beta-ga2o3 Contacts and Interfaces Growth and Characterization of Homo- and Heteroepitaxial beta- Ga2O3 thin Ffilms Low-Ohmic Contact and Hall Sampling on MBE, VPE, LPCVD Materials Characterization of b-ga2o3 MOS Capacitors with High-k Dielectrics Interfaces in Ga2O3 Power Semiconductor Devices Thermal Characterization of Ga2O3 Schottky Barrier Diodes A thermodynamic approach to Ga2O3 contacts Contacts and interfacesinterfaces Ga2O3 Atomistic Modeling Modeling and Simulation Device Level Modeling and Thermal Simulations with Sentaurus Device J. Speck, UCSB Y. Cao, HRL H. Zhao, CWRU D. Thomson, AFRL D. Jena, Cornell K. Chabak, AFRL S. Rajan, OSU S. Mou, AFRL P. Ye, Purdue A. Corrion, HRL U. Singisetti, U. Buffalo S. Ringel, OSU L. Porter, CMU M. Tadjer, NRL A. Green, WYLE C. Young, UT Dallas A. Yanguas-Gil, ANL S. Choi, Penn State B. Peterson, U. Michigan S. Badescu, AFRL E. Heller, AFRL 3 P a g e
4 GW Results for beta-ga2o3 including Lattice Polarization Corrections and the Absorption Edge Anisotropy Ab initio Simulations on Controlling the Conductivity in Ga2O3 Ga2O3 Materials and Commercial Availability Growth of Bulk Single Crystal Gallium Oxide Commercial Materials and Reactor Development HVPE Capabilities and Ga2O3 Growth Tool Development Ga2O3 MOCVD Tool Hardware and Process Issues W. Lambrecht, CWRU J. Varley, LLNL A. Kuramata, NCT D. Hanser, Veeco K. Stevens, Synoptics J. Leach, Kyma G. Tompa, SMI 5 um per hour Growth Rates of High Quality b-gao by MOCVD A. Osinsky, Agnitron High Voltage Amplifiers and Pulse Generators Power Applications Enabled by UWBG Application Summary and Identification of Knowledge Gaps S. Nelson, ENGIN-IC V. Mehrotra, Teledyne 4 P a g e
5 Agenda Day 2 December 13, 2016 Time Title Speaker 7:30 Registration 8:00 Rehash and Discussion on Application Space This is a forum where nonproprietary application oriented discussions are encouraged and may include ITAR/EAR information. 9:00 Reserved by appointment Filled 9:20 Reserved by appointment Filled 9:40 Reserved by appointment Filled 10:00 Break 10:10 Reserved by appointment Filled 10:30 Reserved by appointment Filled 10:50 Reserved by appointment Filled 11:10 Reserved by appointment Filled 11:30 Break 11:40 Gov t Caucus Gov t only discussion on program coordination and technical direction 12:45 MEETING ADJOURN 5 P a g e
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