Ultra-Wide Bandgap AlGaN Channel MISFET with Graded Heterostructure Ohmic Contacts
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1 Ultra-Wide Bandgap AlGaN Channel MIFET with Graded Heterostructure Ohmic Contacts anyam Bajaj 1, F. Akyol 1,. Krishnamoorthy 1, Y. Zhang 1,. Rajan 1 1 epartment of Electrical and Computer Engineering The Ohio tate University, Columbus, OH UA A. Armstrong 2, A. Allerman 2 2 andia National Laboratories, Albuquerque, NM UA Acknowledgment: ONR (r. Paul Maki), NF (ECC ), Raytheon I Microelectronics 1
2 Outline Motivation Heterostructure graded ohmic contacts Experimental results MIFET device operation 2
3 Outline Motivation Heterostructure graded ohmic contacts Experimental results MIFET device operation 3
4 Ultra-wide bandgap material systems Breakdown Field (MV/cm) GaN Fitting: V br ~ 0.15*(E g ) 2.5 MV/cm β-ga 2 O 3 AlN iamond 2 4H-iC Energy Bandgap (ev) GaN wide bandgap (3.4 ev) Ultrawide bandgap (UWBG) material systems with bandgap exceeding 4 ev AlN with extremely high (theoretical) breakdown field ~ 5X of GaN Results in high composition AlGaN with superior device figures of merits next-generation rf amplifiers? Power switches? Hudgins et al. IEEE TE 18.3 (2003) 4
5 witching figure of merit n s =10 13 cm -2 n s =10 13 cm -2 Al mole fraction in AlGaN 2EG mobility: Limited by Alloy cattering + Optical Phonon cattering Bajaj et al., APL (2014) 5
6 witching figure of merit n s =10 13 cm -2 n s =10 13 cm -2 Al mole fraction in AlGaN 2EG mobility: Limited by Alloy cattering + Optical Phonon cattering n s =10 13 cm -2 Baliga figure of merit (εμe C3 ): uperior for larger Al compositions in channel than GaN Al mole fraction in AlGaN Bajaj et al., APL (2014) 6
7 AlGaN for rf electronics Breakdown Field (MV/cm) AlN β-ga 2 O 3 iamond 6 4 GaN 2 4H-iC Energy Bandgap (ev) Johnson's FOM (x10 7 MV/s) AlGaN channels with predicted electron velocities comparable to GaN superior Johnson s figure of merit (theoretical) Farahmand et al. IEEE TE 48.3 (2001) Anwar et al. IEEE TE 48.3 (2001) 7
8 AlGaN for rf electronics / optoelectronics Breakdown Field (MV/cm) AlN β-ga 2 O 3 iamond 6 4 GaN 2 4H-iC Energy Bandgap (ev) Johnson's FOM (x10 7 MV/s) Fig. by Crystal I ( AlGaN channels with predicted electron velocities comparable to GaN superior Johnson s figure of merit (theoretical) Also enables deep-uv emitters and detectors Farahmand et al. IEEE TE 48.3 (2001) Anwar et al. IEEE TE 48.3 (2001) 8
9 Key Challenges Material Challenges: efects, Mobility evice Challenges: High contact resistances to AlGaN Channels Li et al., IEEE EL 20.7 (1999) Yue et al., IEEE EL 33.7 (2012) ρ C (Ω.cm 2 ) E-3 1E-4 1E-5 1E-6 Nanjo et al. APL (2008) Yafune et al. JJAP (2011) Yafune et al. JJAP (2011) GaN HEMTs [ref] Wang et al. El. Mat. (2004) France et al. APL (2007) Yafune et al. El.Lett. (2014) Yun et al. EL (2006) Baca et al. APL (2016) rivastava et al. El. Mat. (2009) 1E Al composition in AlGaN channel 9
10 Outline Motivation Heterostructure graded ohmic contacts Experimental results MIFET device operation 10
11 Ohmic Contact Formation Requirements: 1. High channel electron affinity / matching metal work function 2. High doping density Φ M χ E VAC Result in small tunneling barrier and width for electrons high tunneling probability e - Φ B W E C E F 4 2m* φ B 3e T = e 1/ 2 W Metal emiconductor N + Charge Q M 11
12 Ohmic Contact Formation Requirements: 1. High channel electron affinity / matching metal work function 2. High doping density Φ M χ E VAC Result in small tunneling barrier and width for electrons high tunneling probability e - Φ B W E C E F Conventional n-gan channel: Relatively high electron affinity (4.1 ev) Metals with similar work function result in small tunneling barrier R C below 10-6 Ω.cm 2 Metal emiconductor 12
13 Ohmic Contact Formation Requirements: 1. High channel electron affinity / matching metal work function 2. High doping density Φ M χ E VAC Result in small tunneling barrier and width for electrons high tunneling probability e - Φ B W E C E F Conventional n-gan channel: Relatively high electron affinity (4.1 ev) Metals with similar work function result in small tunneling barrier R C below 10-6 Ω.cm 2 Metal 2EG emiconductor AlGaN barrier GaN channel GaN HEMTs alloyed / regrown contacts give low R C to 2EG Li et al., IEEE EL 20.7 (1999) Yue et al., IEEE EL 33.7 (2012) 13
14 Ohmic Contacts to UWBG AlGaN Challenges: 1. Low electron affinity of AlN (0.6 ev) high chottky barrier 2. Low doping efficiency Φ M χ E VAC Result in low tunneling probability, high R C e - Φ B W E C E F Metal emiconductor 14
15 Heterostructure-engineered ohmic contacts A UWBG n-algan channel A E F AlGaN χ Φ B EVAC E C E V N + Q M Charge Conventional ohmic contact to n-type UWBG AlGaN channel large chottky barrier 15
16 Heterostructure-engineered ohmic contacts A A Reverse graded AlGaN -> GaN χ Φ B E VAC E C UWBG n-algan channel E F GaN AlGaN E V Q M N + P PZ +P P Charge Contact layer with reverse composition-grading from wider bandgap AlGaN to lower bandgap GaN lower chottky barrier 16
17 Heterostructure-engineered ohmic contacts A A Reverse graded AlGaN -> GaN χ Φ B E VAC E C UWBG n-algan channel E F Negative polarization charge (spontaneous + piezoelectric) raises E C (0001 direction) large barrier for electrons! Jena et al., APL (2002) Rajan et al., APL 84.9 (2004) Q M GaN P PZ +P P AlGaN E V N + Charge Contact layer with reverse composition-grading from wider bandgap AlGaN to lower bandgap GaN lower chottky barrier 17
18 Heterostructure-engineered ohmic contacts A A Reverse graded n ++ AlGaN -> GaN χ Φ B E VAC E C UWBG n-algan channel n ++ graded AlGaN E F E V High donor concentration compensates negative polarization charge flat E C profile, low R H Jena et al., APL (2002) Rajan et al., APL 84.9 (2004) Park et al., IEEE EL 36.3 (2015) Q M N + Electron slab P PZ +P P Charge Contact layer with reverse composition-grading from wider bandgap AlGaN to lower bandgap GaN lower chottky barrier 18
19 Outline Motivation Heterostructure graded ohmic contacts Experimental results MIFET device operation 19
20 Experiment n-type Al 0.75 Ga 0.25 N Channel A A A A 50nm Graded n ++ AlGaN i = cm nm Al 0.75 Ga 0.25 N i = 3x10 19 cm -3 30nm Al 0.75 Ga 0.25 N (UI) AlN on apphire 6% 75% Energy (ev) A GROWN: Contact region n-al 0.75 Ga 0.25 N Graded AlGaN UI AlGaN AlN istance (nm) E C E F E V nm 75% n-algan channel with E G = 5.35 ev (MBE growth on AlN/apphire template) - i donor concentration = 3x10 19 cm nm n ++ reverse polarization-graded contact layer - Conduction band profile under ohmic region (as-grown) 20
21 Experiment n-type Al 0.75 Ga 0.25 N Channel A A A 90nm Al 0.75 Ga 0.25 N i = 3x10 19 cm -3 30nm Al 0.75 Ga 0.25 N (UI) AlN on apphire A 6% 75% Energy (ev) RECEE: Intrinsic region n-al 0.75 Ga 0.25 N UI AlGaN istance (nm) AlN E C E F E V nm 75% n-algan channel with E G = 5.35 ev (MBE growth on AlN/apphire template) - i donor concentration = 3x10 19 cm nm n ++ reverse polarization-graded contact layer - Conduction band profile under gate region (recessed) 21
22 Non-Alloyed Ohmics Contacts Graded AlGaN contact layer AlGaN channel 30nm Al 0.75 Ga 0.25 N (UI) AlN on apphire Non-alloyed ohmic contacts Ti/Al/Ni/Au = 20/120/30/50 nm 22
23 Contact Resistance using TLM spacing R H AlGaN channel 30nm Al 0.75 Ga 0.25 N (UI) AlN on apphire Resistance (ohm) = 0.15 Ω.mm R H = 158 Ω/sq ρ P = 1.4x10-6 Ω.cm pacing (µm) As-grown structure: (Metalsemiconductor interface resistance) = 0.15 Ω.mm ρ P = 1.4x10-6 Ω.cm 2 Recessed structure: Net R C to 75% AlGaN channel = 0.32 Ω.mm ρ P = 1.9x10-6 Ω.cm 2 Non-alloyed ohmic contacts Ti/Al/Ni/Au = 20/120/30/50 nm 23
24 Contact Resistance using TLM spacing R H AlGaN channel 30nm Al 0.75 Ga 0.25 N (UI) AlN on apphire Resistance (ohm) = 0.15 Ω.mm R H = 158 Ω/sq ρ P = 1.4x10-6 Ω.cm pacing (µm) As-grown structure: (Metalsemiconductor interface resistance) = 0.15 Ω.mm ρ P = 1.4x10-6 Ω.cm 2 spacing 90nm channel R H1 RH2 R H1 30nm Al 0.75 Ga 0.25 N (UI) AlN on apphire Resistance (ohm) R H1 = 0.32 Ω.mm R H2 = 725 Ω/sq ρ P = 1.9x10-6 Ω.cm pacing (µm) Recessed structure: Net R C to 75% AlGaN channel = 0.32 Ω.mm ρ P = 1.9x10-6 Ω.cm 2 Cl 2 -based ICP-RIE etch to test contact to AlGaN channel 24
25 Contact Resistance using TLM spacing R H AlGaN channel 30nm Al 0.75 Ga 0.25 N (UI) AlN on apphire spacing 90nm channel R H1 RH2 R H1 30nm Al 0.75 Ga 0.25 N (UI) AlN on apphire Resistance (ohm) Resistance (ohm) = 0.15 Ω.mm R H = 158 Ω/sq ρ P = 1.4x10-6 Ω.cm pacing (µm) +R H1 = 0.32 Ω.mm R H2 = 725 Ω/sq ρ P = 1.9x10-6 Ω.cm pacing (µm) ρ C (Ω.cm 2 ) E-3 1E-4 1E-5 Nanjo et al. APL (2008) Yafune et al. JJAP (2011) Yafune et al. JJAP (2011) Wang et al. El. Mat. (2004) France et al. APL (2007) Baca et al. APL (2016) Yafune et al. El.Lett. (2014) Yun et al. EL (2006) 1E-6 GaN HEMTs [ref] This work 1E ρ P = 1.9x10-6 Ω.cm 2 rivastava et al. El. Mat. (2009) Al composition in AlGaN channel Low ρ P to UWBG AlGaN ~ 5.3 ev (Non-alloyed) 25
26 Outline Motivation Heterostructure graded ohmic contacts Experimental results MIFET device operation 26
27 Al 0.75 Ga 0.25 N Channel MI-FET G 20nm Al 2 O 3 12nm n-algan channel C G (µf/cm 2 ) khz V G (V) n (x10 12 cm -2 ) 37nm Al 0.75 Ga 0.25 N (UI) AlN substrate - Recessed structure with 12 nm n-al 0.75 Ga 0.25 N channel G - 20 nm AL Al 2 O 3 followed by 700 C PA (30s) - C-V profile resulted in pinch-off voltage = - 6 V ; accumulation region with MEFET-like behavior ; charge = 1.5x10 13 cm -2 27
28 Al 0.75 Ga 0.25 N Channel MI-FET G 20nm Al 2 O 3 12nm n-algan channel I (ma/mm) V G = 2 V V G = -2 V V (V) I (ma/mm) V = 20 V V G (V) g m (m/mm) 37nm Al 0.75 Ga 0.25 N (UI) AlN substrate - Recessed structure with 12 nm n-al 0.75 Ga 0.25 N channel - 20 nm AL Al 2 O 3 followed by 700 C PA (30s) - C-V profile resulted in pinch-off voltage = - 6 V ; accumulation region with MEFET-like behavior ; charge = 1.5x10 13 cm -2 rf gain (db) f T = 0.6 GHz Frequency (Hz) h21 U MG V G = 4 V V = 25 V - I _MAX ~ 60 ma/mm ; g m_max = 14 m/mm - f T_PEAK of 0.6 GHz ; f MAX_PEAK of 1.4 GHz - Limited by low channel mobility of 16 cm 2 /Vs - efect related compensation 28
29 Al 0.75 Ga 0.25 N Channel MI-FET G 37nm Al 0.75 Ga 0.25 N (UI) AlN substrate 20nm Al 2 O 3 12nm n-algan channel - Recessed structure with 12 nm n-al 0.75 Ga 0.25 N channel - 20 nm AL Al 2 O 3 followed by 700 C PA (30s) - C-V profile resulted in pinch-off voltage = - 6 V ; accumulation region with MEFET-like behavior ; charge = 1.5x10 13 cm -2 I,I,I G (µa/mm) 140 V G = -9 V L G = 1.1 µm V br = 224 V G = -9 V for L G = 1.1 μm in Fluorinert - no field plates - Average field > 2 MV/cm higher than GaN FETs I G V (V) (compliance) I I 29
30 UMMARY - Heterostructure graded ohmic contacts to UWBG AlGaN compositional grading + high doping - Achieved low specific contact resistance to Al 0.75 Ga 0.25 N channels (NON-ALLOYE) - emonstrated the 1 st UWBG Al 0.75 Ga 0.25 N channel MIFET with low-resistance ohmics (MBE) ρ C (Ω.cm 2 ) E-3 1E-4 1E-5 Nanjo et al. APL (2008) Yafune et al. JJAP (2011) Yafune et al. JJAP (2011) France et al. APL (2007) Baca et al. APL (2016) Yafune et al. El.Lett. (2014) Yun et al. EL (2006) Wang et al. rivastava et al. El. Mat. (2004) El. Mat. (2009) 1E-6 GaN HEMTs [ref] This work 1E Al composition in AlGaN channel - This work removes one of the principle challenges for UWBG AlGaN devices; applications in large range of electronic and photonic devices spacing 90nm channel R H1 RH2 R H1 30nm Al 0.75 Ga 0.25 N (UI) AlN on apphire Resistance (ohm) R H1 = 0.32 Ω.mm R H2 = 725 Ω/sq ρ P = 1.9x10-6 Ω.cm pacing (µm) I (ma/mm) V G = 2 V V G = -2 V V (V) 30
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