Small Plasma Devices

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1 Research on Small Plasma Devices At University of Malaya C.S. Wong Plasma Research Laboratory Physics Department, University of Malaya Kuala Lumpur, Malaysia Plasma Technology Research Group Physics Department, University of Malaya fizik.um.edu.my/plasma/ Prof. C.S.Wong Group Leader Prof. K. Ratnavelu Prof. Saadah A.R. Dr. S.L. Yap Dr. Sithi Muniandy Dr. Roslan Md. Nor Dr. O.H. Chin Prof. Zanuldin Ahmad (MUST) Prof. S. Lee (INTI UC / NIE NTU) Dr. S.H. Saw (INTI UC) Mr. H.P. Lem (nanoflex) Dr. Rattachat M. (CU, Thailand) Dr. Peter Choi (nanouv, France) Support Staffs: Encik Jasbir Singh Technical Assistant Cik Seniah Ariffin Lab. Assistant Postgraduate Students: K.H. Ng PhD Siti A iasah Hashim PhD Hossein Asgari PhD S.K. Ngoi MSc, S.S. Low MSc L.S. Chan MSc S.H. Lee MSc Kanesh Kumar MSc C.K. Lai MSc Siti Sarah MSc Y.S. Lee MSc Low Temperature Plasmas DC/AC Glow Discharge RF Inductively Coupled Plasma Dielectric Barrier Discharge Dusty Plasma Pulsed Plasmas Plasma Focus Vacuum Spark, Flash X-ray Tube Pulsed Capillary Discharge Exploding Wire Plasma Computation GEANT4, SRIM2003 RATION, FLY SPARK, Pinch/Focus computation Gas discharge modelling

2 Discharged-based X-ray X / EUV sources Vacuum spark Flash X-ray X tube / Vacuum spark UMFX-1 : 20 kv, 3.3 nf UMFX-3 : 30 kv, 21.6 nf UMVS-3 : 20 kv, 1.85 μf UMVS-6 : 30 kv, 22 nf

3 UMFX-1 Pulsed X-ray X Source 20 kv, 3.3 nf X-ray production mechanism in UMFX-1 e-beam X-ray

4 UNIVERSITI MALAYA FLASH X-RAY SOURCE (UMFX-1/20) Possible applications: Modern physics experiments in schools and in colleges. Non-destructive inspection (radiography) of small samples including biological samples. X-ray lithography for fabrication of microelectronic circuits. X-ray radiographic system using UMFX-1 Silver Medal, 33rd International Exhibition of Invention, New Techniques and Products, Geneva 2005

5 UMVS Pulsed X-ray/EUV X Source 30 kv, 22 nf UMVS-6 as EUV source for lithography 30 kv, 10 J max (EUV) (EUV)

6 UMVS-6 EUV Spectra (Cu anode, 20 kv, 22 nf)? (nm) Spectral lines near to 13.5 nm Cu Cu Cu Cu Cu Cu Cu Cu Cu Cu Cu Cu

7 Fractional Population According to Coronal Equilibrium Model Copper Cu ev EUV spectra of various Sn species

8 Fractional population of Tin T e Vacuum spark (UMVS-3) E o ~ 5.55 kev T e ~ 2.8 kev 20 kv, 1.85 μf n e ~ cm -3, T e ~ 3 kev

9 Pulsed capillary discharge 30 kv, 22 nf Intense EUV source λ < 1000Å Typical results of pulsed capillary discharge DEC 04 Argon (19kV, 1.0x10-4 mbar) Capillary Discharge: 6 x 4.8 nf, 20 kv nm 0.26 Discharge current EUV Emission (A.U.) plasma E E E E E E E E E E-06 Time (s) Time-integrated pinhole image (visible to EUV)

10 Time-resolved pinhole imaging of pulsed capillary discharge v~21kv, P~4x10^-5 mbar 8 Current (V) Time (s) -6.00E E E E E E An example of EUV spectrum of UMCD T e ~ 30 ev

11 Xe lines at around 13.5 nm Num Atom Ion Zspec Wavelength, Transition A rad, s -1 A 1 Xe Cu f-4d 2 Xe Cu f-4d 3 Xe Cu d-4p 4 Xe Ne p-3s Xe Ne p-3s Possible argon lines at around 13.5 nm

12 CE Model description of argon plasma 1.0 Ar 8+ Population Fraction Ar 6+ Ar 9+ Ar Ar Electron Temperature (ev) Ar 12+ To vacuum pump Wire Wire holders View port To capacitor through spark gap. (a) (b) Typical magnetic probe and PIN diode signals obtained at 7 kv discharge with pressures of (a) 10-2 mbar and (b) 1 bar

13 Industrial Plasmas Low pressure discharge (RF ICP, MHz) Atmospheric discharge (dielectric barrier discharge) RF Inductively Coupled Plasma System

14 RF ICP Discharge Circuit 2 modes of operation for RF ICP 1. E-mode (low power) - lower temperature and density 2. H-mode (higher power) - higher temperature and density

15 Plasma System 1 : UMGD4 Planar coil, inductively coupled 600 W, MHz Applications: nitriding (stainless steel, Ti) TiN, TiO 2 coating SEM of cross-sectional sectional view of nitrided stainless steel

16 X-ray diffractogram of nitrided stainless steel Nitriding of titanium Before After

17 X-ray diffractogram of nitrided titanium TiN (110) + Ti 3N 2-X (009) Ti 3N 2-X (015) Intensity (counts/second) Ti 3N 3-X (104) Ti 2N (111) Ti 2N (210) TiN (200) Ti 2N (211) Ti 2N (220) TiN (220) Ti 3N 2-X (024) TiN (311) θ (degrees) Coating of TiN on stainless steel Un-coated stainless steel Coated with TiN

18 TiN coating on stainless steel (biased at -160 V) SEM AFM Drill bit coated with TiN

19 Plasma System 2 : UMGD5 Planar coil, inductively coupled 600 W, MHz Applications: Oxidation of silicone, coating of diamond-like carbon Polycrystalline diamond-like carbon CPS Raman Shift (cm-1) SEM Raman

20 Plasma System 3 : UMGD7 Planar coil; inductively coupled 2 kw, khz Applications : Plasma Polymerization (a-c:h), Silicon etching W W Intensity (arb. unit) Intensity (arb. unit) Intensity (arb. unit) Wavenumber (cm -1 ) 100 W Intensity (arb. unit) Wavenumber (cm -1 ) W Wavenumber (cm -1 ) Wavenumber (cm -1 ) Formation of a-c:h film on Si substrate

21 Pressure gauge Wire Electrode plate To vacuum pump O 2 + monomer Electrode holder Wire AC (50 HZ) powered Plasma Polymerization System - Grafting of polymer surface by Oxygen plasma before Cu plating Atmospheric pressure dielectric barrier discharge system

22 Dielectric barrier discharge as Plasma ozonizer 1. Treatment of chemical wastes from industry - removal of environmentally harmful chemicals (e.g. textile industry, sugar refinery etc) 2. Water treatment - disinfection/sterilization (e.g. Soft drink industry, shrimp/fish farm, swimming pool) Ozonizer tube (Dielectric barrier discharge)

23 Portable plasma ozonizer (2 tubes) Main features: 1. Malaysian design 2. Low cost, low power consumption and simple in operation 3. Output: μg/s 10 tubes Ozonizer Module Output per module: 1000 μg/s (sufficient to treat domestic swimming pool)

24 Ozone for removal of colour from water Ozone disinfection of bacteria Before treatment treated for 5 min treated for 30 min

25 Dielectric Barrier Discharge for Chemical Syntheses N 2 + O NO + N N 2 + O NO + N NO removal using DBD in series 60 NO concentration (ppm) kV 38.9kV 40kV Time (min)

26 Parallel-plate Electrodes 50 Hz, 42.5 kv p-p Parallel-plate Electrodes 8 khz, 10 kv p-p

27 Cylindrical Coaxial Electrodes 50 Hz, 34.2 kv p-p Cylindrical Coaxial Electrodes 5 khz, 18 kv p-p

28 Possible applications of DBD As chemical synthesizer (Ozonizer, de-no x, de-so x ) Activation of surfaces including polymer, fabric, paper De-activation of baterials (disinfection) PE-CVD, surface cleaning, etching Plasma TV.. Thank you for your attention

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