PROPERTIES OF ADVANCED SEMICONDUCTOR MATERIALS
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1 PROPERTIES OF ADVANCED SEMICONDUCTOR MATERIALS GaN, AIN, InN, BN, SiC, SiGe Edited by Michael E. Levinshtein The Ioffe Institute, Russian Academy of Sciences Sergey L. Rumyantsev The Ioffe Institute, Russian Academy of Sciences Michael S. Shur Rensselaer Polytechnic Institute A WILEY-INTERSCIENCE PUBLICATION JOHN WILEY & SONS, INC. New York / Chichester / Weinheim / Brisbane / Singapore / Toronto
2 Contents Contributors Preface xiii xv Chapterl Gallium Nitride (GaN) 1 V. Bougrov, M. Levinshtein, S. Rumyantsev, and A. Zubrilov 1.1. Basic Parameters at 300 K / Band Structure and Carrier Concentration / Temperature Dependences / Dependence on Hydrostatic Pressure / Band Discontinuities at Heterointerfaces / Effective Masses / Donors and Acceptors / Electrical Properties / Mobility and Hall Effect / Two-Dimensional Electron Gas Mobility at AlGaN/GaN Interface / Transport Properties in High Electric Field / Impact Ionization / Recombination Parameters / Optical Properties / 16 vii
3 viii Contents 1.5. Thermal Properties / Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties / 24 References / 28 Chapterl Aluminum Nitride (AIN) 31 Yu. Goldberg 2.1. Basic Parameters at 300 K / Band Structure and Carrier Concentration / Temperature Dependences / Dependences on Hydrostatic Pressure / Band Discontinuities at Heterointerfaces / Effective Masses / Donors and Acceptors / Electrical Properties / Mobility and Hall Effect / Recombination Parameters / Optical Properties / Thermal Properties / Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties / 44 References / 46 Chapter3 Indium Nitride (InN) 49 A. Zubrilov 3.1. Basic Parameters at 300 K / Band Structure and Carrier Concentration / Temperature Dependences / Dependence on Hydrostatic Pressure / Band Discontinuities at Heterointerfaces / Effective Masses / Donors and Acceptors / Electrical Properties / Mobility and Hall Effect / 54
4 Contents IX Transport Properties in High Electric Field / Impact Ionization / Recombination Parameters / Optical Properties / Thermal Properties / Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties / 63 References / 65 Chapter 4 Boron Nitride (BN) 67 S. Rumyantsev, M. Levinshtein, A.D. Jackson, S.N. Mohammad, GL. Harris, M.G. Spencer, and M.S. Shur 4.1. Basic Parameters at 300 K / Band Structure and Carrier Concentration / Dependence on Hydrostatic Pressure / Effective Masses / Donors and Acceptors / Electrical Properties / Optical Properties / Thermal Properties / Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties / 86 References / 91 Chapter 5 Silicon Carbide (SiC) 93 Yu. Goldberg, M. Levinshtein, and S. Rumyantsev 5.1. Basic Parameters at 300 K / Band Structure and Carrier Concentration / Temperature Dependences / Dependence on Hydrostatic Pressure / Energy Gap Narrowing at High Doping Levels / Effective Masses / Donors and Acceptors / 104
5 X Contents 5.3. Electrical Properties / Mobility and Hall Effect / Transport Properties in High Electric Field / Impact Ionization / Recombination Parameters / Optical Properties / Thermal Properties / Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties / 138 References / 143 Chapterb Silicon-Germanium (Si 1x Ge x ) 149 F. Schäffler 6.1. Basic Parameters in Unstrained Bulk Material at 300 K / Band Structure and Carrier Concentration / Temperature Dependences / Dependence of Energy Gap on Hydrostatic Pressure / Strain-Dependent Band Discontinuity / Effective Masses / Electrical Properties / Mobility and Hall Effect / Two-Dimensional Electron Gas / Two-Dimensional Hole Gas / Optical Properties / Thermal Properties / Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties / 179 References / 186 Appendixes Basic Physical Constants / Periodic Table of the Elements / 190
6 Contents xi 3. Rectangular Coordinates for Hexagonal Crystal / The First Brillouin Zone for Wurtzite Crystal / Zinc Blende Structure / The First Brillouin Zone for Zinc Blende Crystal / 192 Additional References 193
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